Entries |
Document | Title | Date |
20080202416 | High temperature ALD inlet manifold - A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, easily purged reactant lines. Integral passageways and metal seals avoid o-rings and attendant dead zones along flow paths. The manifold includes an internal inert gas channel for purging reactant lines within the block inlet manifold | 08-28-2008 |
20080202417 | Self-contained process modules for vacuum processing tool - A substrate processing apparatus is described. The apparatus includes a substrate load lock chamber. A substrate transfer chamber is vacuum coupled to the substrate load lock chamber. A plurality of process chamber modules are vacuum coupled to the substrate transfer chamber. Each of the process chamber modules includes a process chamber coupled to a dedicated support system so that each process chamber module can be disconnected from the substrate transfer chamber without disrupting any of the other process chamber modules. The substrate transfer chamber includes one or more robotic arms for transferring semiconductor substrates between the substrate load lock chamber and the plurality of process chamber modules. | 08-28-2008 |
20080210162 | Substrate Processing Apparatus and Substrate Processing System - In a substrate processing apparatus in which substrates are processed by an operator who prepares recipes on an operating screen displayed on a display means, and a processing means that performs the prepared recipes, a configuration is adopted so that a plurality of operating items relating to an adjustment operation involving the aforementioned substrate processing apparatus is displayed in order, and the recipes used in the aforementioned respective operating items during the aforementioned adjustment operations are displayed on the aforementioned operating screen. | 09-04-2008 |
20080210163 | Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems - A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source. | 09-04-2008 |
20080216742 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas. | 09-11-2008 |
20080230007 | METHOD AND APPARATUS FOR MANUFACTURING ACTIVE MATRIX DEVICE INCLUDING TOP GATE TYPE TFT - A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film. | 09-25-2008 |
20080236487 | Semiconductor Manufacturing Apparatus And Semiconductor Device Manufacturing Method - Adverse effects when a carrier is open, such as particles adhesion to the substrate or natural oxidation film deposits on the substrate, as well as a rise in oxygen concentration and contamination of the substrate transfer chamber are prevented. Semiconductor manufacturing apparatus includes a carrier ( | 10-02-2008 |
20080251014 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080251015 | Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber. | 10-16-2008 |
20080264340 | MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS - A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber. | 10-30-2008 |
20080271675 | Method of forming thin film solar cells - A single chamber CVD manufacturing process enables thin film p-i-n solar cells exhibiting collection efficiencies in the range of 9% to 12%, and higher. These collection efficiencies are achieved by: Changing the overall chemical and structural composition of the p-doped layer; Using techniques to remove residual reactants after deposition of the p-doped layer; optionally, applying a buffer layer of a hydrogen-rich amorphous silicon between the p-doped layer and a subsequently deposited intrinsic layer; and, changing the silicon crystalline composition during deposition of an i-doped layer or an n-doped layer. The single chamber process provides a cost of manufacture/solar cell output in $/Watt that is competitive. | 11-06-2008 |
20080282978 | Process For Manufacturing A Gallium Rich Gallium Nitride Film - A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900° C. and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 10 | 11-20-2008 |
20080289575 | METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS - An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone. | 11-27-2008 |
20080302302 | Substrate Processing System - Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product. | 12-11-2008 |
20080308040 | Cvd Reactor Comprising a Gas Inlet Member - The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel ( | 12-18-2008 |
20080308041 | PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode | 12-18-2008 |
20090000550 | MANIFOLD ASSEMBLY - Embodiments of a manifold assembly are provided herein. In some embodiments, a manifold assembly includes a first manifold having a first inlet, for coupling to a high temperature fluid source, and a first outlet; a second manifold having a second inlet and a second outlet; and a connector portion coupling the first outlet of the first manifold to the second inlet of the second manifold, the connector portion includes a polymer block; and a thermal isolator disposed between the polymer block and the first manifold. | 01-01-2009 |
20090007846 | DIFFUSER GRAVITY SUPPORT - An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed. | 01-08-2009 |
20090013930 | GAS DISTRIBUTOR WITH PRE-CHAMBERS DISPOSED IN PLANES - A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes ( | 01-15-2009 |
20090013931 | Continuous Growth Of Single-Wall Carbon Nanotubes Using Chemical Vapor Deposition - The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process. | 01-15-2009 |
20090025639 | GAS INLET ELEMENT FOR A CVD REACTOR - The invention relates to a gas inlet element ( | 01-29-2009 |
20090064932 | Apparatus for HDP-CVD and method of forming insulating layer using the same - Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process. | 03-12-2009 |
20090084315 | METHOD AND APPARATUS FOR PARTICLE FILTRATION AND ENHANCING TOOL PERFORMANCE IN FILM DEPOSITION - This disclosure pertains to a method and apparatus to permit changing a filter on the input line to a vacuum deposition chamber without breaking or reducing the vacuum for the deposition chamber and other components in the deposition system. Isolation valves are provided at the inlet and outlet of the filter so the filter can be isolated from the source of vacuum and the deposition chamber for removal and replacement of the filter. | 04-02-2009 |
20090090301 | COMPENSATION PLATE USED IN A FILM COATING DEVICE - A compensation plate used in a film coating device includes a main body defining a plurality of guiding holes, a plurality of moveable blades connected to the main body, and a plurality of connectors. Each of the plurality of moveable blades defines two through holes corresponding to one of the plurality of guiding holes. The plurality of connectors engage in the through holes and the guiding holes, fix each of the plurality of moveable blades to the main body when each of the plurality of connectors is fastened, and slide in each of the plurality of guiding holes with each of the moveable blades when each of the plurality of connectors releases. | 04-09-2009 |
20090095221 | MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are separately delivered to a plurality of concentric gas injection ports. The precursor gases are injected into mixing zones where the gases are mixed before entering a processing volume containing the substrates. | 04-16-2009 |
20090107400 | SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD - A gas injection head | 04-30-2009 |
20090120363 | Gas Supply Pipe for Plasma Treatment - Peeling off of a deposited film formed on the outer surface of a gas supply pipe is effectively prevented, and adhesion of a deposited film which has been peeled off to the inner surface of a container or to a nozzle-sealed surface can be prevented as much as possible. | 05-14-2009 |
20090120364 | GAS MIXING SWIRL INSERT ASSEMBLY - A gas mixing system for a semiconductor wafer processing chamber is described. The mixing system may include a gas mixing chamber concentrically aligned with a gas transport tube that extends to a blocker plate. The gas mixing chamber and the transport tube are separated by a porous barrier that increases a duration of gas mixing in the gas mixing chamber before processes gases migrate into the transport tube. The system may also include a gas mixing insert having a top section with a first diameter and a second section with a second diameter smaller than the first diameter and concentrically aligned with the top section. The processes gases enter the top section of the insert and follow channels through the second section that cause the gases to mix and swirl in the gas mixing chamber. The second section extends into the gas mixing chamber while still leaving space for the mixing and swirling around the sidewalls and bottom of the mixing chamber. | 05-14-2009 |
20090133627 | SUBSTRATE PROCESSING APPARATUS AND METHOD, AND GAS NOZZLE FOR IMPROVING PURGE EFFICIENCY - A substrate processing apparatus capable of efficiently purging not only a process space but also the inside of a processing gas feed nozzle when a multi element compound film is formed on a substrate by laminating a molecular layer thereon, wherein an exhaust line is connected to one end of the processing gas feed nozzle jetting the processing gas in a laminar flow into the process space along the surface of the treated substrate, and the processing gas or purge gas is fed from the other end thereof. | 05-28-2009 |
20090139451 | PROCESS OF MONITORING DISPENSING OF PROCESS FLUIDS IN PRECISION PROCESSING OPERATIONS - A process of monitoring the dispensing of process fluids in precision processing operations. A precision measuring instrument measures a cumulative amount of a process fluid dispensed to at least one dispensing station and compares that amount with a predetermined amount. An alarm is provided to an operator when the cumulative actual required amount of process fluid dispensed after a preset number of dispensations differs from the cumulative predetermined dispensed amount of that fluid by more than a preset percentage. | 06-04-2009 |
20090159001 | Shower head of chemical vapor deposition apparatus - There is provided a shower head capable of spraying a process reaction gas onto the surface of a semiconductor wafer to deposit the process reaction gas on the surface of the semiconductor wafer as a thin film of uniform thickness. | 06-25-2009 |
20090159002 | Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution - A gas distribution plate for a plasma reactor has an annular gas distribution plenum with an array of gas injection holes and a gas injection port at one end of the annular plenum, the plenum being progressively constricted in cross-sectional area along its azimuthal path by a sloping ceiling. | 06-25-2009 |
20090159003 | DEVICE FOR SUPPLYING ORGANIC METAL COMPOUND - A supplying device has two columnar containers | 06-25-2009 |
20090159004 | VERTICAL CHEMICAL VAPOR DEPOSITION APPARATUS HAVING NOZZLE FOR SPRAYING REACTION GAS TOWARD WAFERS - A vertical chemical vapor deposition apparatus includes a reaction chamber; and a reaction gas supply nozzle for supplying a reaction gas to the reaction chamber. The reaction gas supply nozzle is positioned adjacent to a side wall surface of the reaction chamber. An expanded surface, which protrudes toward the outside of the reaction chamber, is formed in a part of the side wall surface so that the expanded surface is distant from the reaction gas supply nozzle, where the part is adjacent to the reaction gas supply nozzle. The reaction gas supply nozzle sprays the reaction gas toward a center part of the reaction chamber. | 06-25-2009 |
20090178615 | SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME - There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber. | 07-16-2009 |
20090178616 | APPARATUS FOR CHEMICAL VAPOR DEPOSITION (CVD) WITH SHOWERHEAD - Disclosed therein is a method of chemical vapor deposition (CVD) with a showerhead through which a source material gas comprising a reactive gas of at least one kind and a purge gas is injected over a substrate to deposit a film on the substrate, including the steps of: disposing the showerhead in such a way that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a source material gas into the showerhead, wherein reactive gases of different kinds are respectively injected into compartments formed inside the showerhead in such a way that each compartment of the showerhead is filled with the reactive gas of only one kind and a purge gas of the source material gas is supplied into another compartment formed inside the showerhead; and discharging the reactive gas and the purge gas respectively through a large number of reactive gas outlets and a large number of purge gas outlets formed on the bottom surface of the showerhead, the purge gas outlets being more in number than the reactive gas outlets. | 07-16-2009 |
20090205570 | Gas supply unit and chemical vapor deposition apparatus - A gas supply unit and a chemical vapor deposition apparatus are disclosed. A gas supply unit for supplying a reactive gas for a chemical vapor deposition process can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas. With certain embodiments of the invention, the by-products resulting from the chemical vapor deposition process may be exhausted immediately, so that a thin film may be formed over an object with higher quality, and the cleaning cycles for the inside of the chamber may be extended, for greater productivity. | 08-20-2009 |
20090211526 | PROCESSING APPARATUS USING SOURCE GAS AND REACTIVE GAS - The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel ( | 08-27-2009 |
20090241833 | DRILLED CVD SHOWER HEAD - A shower head for a chemical vapor deposition chamber can comprise a plurality of first injectors for a first reactant gas and a plurality of second injectors for a second reactant gas. The first and second injectors can be interspersed among one another so as to enhance control of the mixing and delivery of reactant gases within the chemical deposition chamber. Cooling water can be communicated through a plurality of gun drilled bores formed intermediate injectors of the shower head. In this manner, enhanced control of the mixing and delivery of reactant gases can be provided. | 10-01-2009 |
20090241834 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a processing chamber configured to accommodate a substrate; and a gas supply unit configured to supply gas into the process chamber. The gas supply unit comprises: an evaporator configured to evaporate a liquid material; a first gas supply pipe configured to supply an evaporated gas from the evaporator into the process chamber; a second gas supply pipe configured to supply an inert gas into the process chamber; and a joint part at which the first gas supply pipe and the second gas supply pipe are joined. The joint part includes a diffusion chamber. A flow rate diaphragm having an inner diameter narrowing toward a direction of the diffusion chamber is installed at the front end of the downstream side of the second gas supply pipe. The evaporated gas from the evaporator is introduced into the diffusion chamber and simultaneously the inert gas is introduced through the flow rate diaphragm installed at the front end of the second gas supply pipe. | 10-01-2009 |
20090260569 | CHEMICAL VAPOR DEPOSITION APPARATUS - There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas. | 10-22-2009 |
20090288600 | APPARATUS FOR SUPPLYING SOURCE AND APPARATUS FOR DEPOSITION THIN FILM HAVING THE SAME - The present invention provides an apparatus for supplying a source and an apparatus for depositing a thin film having the same. The apparatus for supplying a source includes a horizontal channel extending in one direction; pumping and transfer ports extending to pass through the horizontal channel, the pumping and transfer ports being spaced apart from each other; a transfer shaft inserted into the horizontal channel to reciprocate therein; and a storage room connected to one side of the pumping port, the storage room storing and supplying a powder source, wherein the transfer shaft comprises at least one transfer hole for allowing the powder source supplied through the pumping port to be filled therein and to be transferred to an external apparatus through the transfer port. As described above, according to the present invention, a powder source filled in a transfer hole is supplied to an external apparatus by reciprocating a transfer shaft, so that the amount of the powder source supplied to the external apparatus can be quantitatively controlled as much as a fixed quantity corresponding to the internal volume of the transfer hole. | 11-26-2009 |
20090308315 | SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED THERMAL CHARACTERISTICS AND METHOD FOR PROVIDING THE SAME - A semiconductor processing apparatus is disclosed, comprising a process chamber configured to contain a heated, gaseous atmosphere, the apparatus further comprising a number of mechanical parts, at least one of which parts is provided at least partly with a heat reflective, amorphous SiO | 12-17-2009 |
20090320754 | INTEGRATED GAS PANEL APPARATUS - Provided is an integrated gas panel apparatus which has excellent responsiveness, stabilizes gas concentration, and furthermore, can keep a conventional panel shape as it is. A panel body ( | 12-31-2009 |
20100012032 | Apparatus for high-rate chemical vapor deposition - An apparatus for high-rate chemical vapor (CVD) deposition of semiconductor films comprises a reaction chamber for receiving therein a substrate and a film forming gas, a gas inlet for introducing the film forming gas into the reaction chamber, an incidence window in the reaction chamber for transmission of a laser sheet into the reaction chamber, a laser disposed outside the reaction chamber for generating the laser sheet and an antenna disposed outside the reaction chamber for generating a plasma therein. The film forming gas in the chamber is excited and decomposed by the laser sheet, which passes in parallel with the substrate along a plane spaced apart therefrom, and concurrent ionization effected by the antenna, thereby forming a dense semiconductor film on the substrate at high rate. | 01-21-2010 |
20100018463 | Plural Gas Distribution System - A plural gas distribution system is presented. The system includes a chamber and a showerhead. The chamber is configured to contain and to exhaust a plurality of gases. The showerhead includes at least one multi-channel gas delivery tube with at least two sub-tubes within the multi-channel gas delivery tube, wherein the at least two sub-tubes are configured to simultaneously expel gases unmixed into the chamber. | 01-28-2010 |
20100024726 | FASTENING APPARATUS - One embodiment of this fastening apparatus comprises a cap with a passage through the length of the cap. This cap is received by the upper panels of a body. The embodiments of this fastening apparatus may have two or more upper panels that form a recess. The body also has a lower region with a passage. The upper panels are flexible and can translate to retain the cap within the recess. A threaded member is disposed in the passage of the body. This cap may be fabricated of graphite in one instance. | 02-04-2010 |
20100024727 | SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME - Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas. | 02-04-2010 |
20100043707 | CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS - A cleaning method of a semiconductor manufacturing apparatus begins by introducing film forming gas include reaction gas not forming a film by itself to reaction chamber to form the film on a semiconductor substrate, decreasing pressure of the reaction chamber, solidifying or liquefying the reaction gas to form particles by using small-particles in the reaction chamber as cores, and exhausting the particles from the reaction chamber. Using this method, foreign small-particles can easily be removed from the apparatus and suppress any possible contamination of semiconductor substrates to be processed. | 02-25-2010 |
20100058984 | Substrate Processing Apparatus - Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump. | 03-11-2010 |
20100064970 | APPARATUS AND METHOD OF FORMING SEMICONDUCTOR DEVICES - An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole. | 03-18-2010 |
20100095890 | GAS SUPPLY SYSTEM, PUMPING SYSTEM, COATING SYSTEM, GAS SUPPLY METHOD, AND PUMPING METHOD - A gas supply system | 04-22-2010 |
20100116205 | PROCESS EQUIPMENT ARCHITECTURE - Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components. | 05-13-2010 |
20100116206 | GAS DELIVERY SYSTEM HAVING REDUCED PRESSURE VARIATION - Embodiments of gas delivery systems for providing process gases sublimated from a solid precursor are provided herein. In some embodiments, a gas delivery system includes an ampoule to hold a solid precursor; a conduit coupled to the ampoule and configured to selectively deliver a sublimated process gas from the solid precursor to a process chamber or an exhaust system; and a flow restrictor disposed in the conduit between the ampoule and the exhaust system. | 05-13-2010 |
20100116207 | REACTION CHAMBER - A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile. | 05-13-2010 |
20100126418 | GAS SHOWER MODULE - A gas shower module for gas deposition chamber with gas channel is disclosed, which comprises: a distributor with at least one diffusion cell positioned therein along first axial direction and a plurality of inlets respectively connecting to the gas channel and the diffusion cell; and a shower with at least one shower channel positioned therein along second axial direction, gas-inlet passages connected to the diffusion cell and the shower channel, and gas-outlet passages connected to the shower channel and gas deposition chamber; wherein the distributor is connected to the shower so that the diffusion cell will be connected to the shower channel through gas-inlet passages and the first axial direction is not be parallel to the second axial direction. | 05-27-2010 |
20100147218 | SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. | 06-17-2010 |
20100170438 | GAS DISTRIBUTOR COMPRISING A PLURALITY OF DIFFUSION-WELDED PANES AND A METHOD FOR THE PRODUCTION OF SUCH A GAS DISTRIBUTOR - The invention relates to a gas distributor ( | 07-08-2010 |
20100175620 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached. | 07-15-2010 |
20100186668 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS - The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. | 07-29-2010 |
20100212591 | REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly. | 08-26-2010 |
20100229793 | SHOWERHEAD FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates. | 09-16-2010 |
20100258052 | HVPE PRECURSOR SOURCE HARDWARE - Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls. | 10-14-2010 |
20100275842 | Evaporating apparatus - Provided is an evaporating apparatus that deposits a deposition material onto a treatment object. The evaporating apparatus includes a base, a deposition source, and first and second correction units. The deposition source deposits the deposition material onto the treatment object. The base is disposed separately from the treatment object. The deposition source is placed on a surface of the base. The first and second correction units located between the deposition source and the treatment object. The first and second correction units are disposed on outer regions of the deposition source and face each other. Each of the first and second correction units rotates to control the thickness of a layer formed by the deposition material deposited on the treatment object. | 11-04-2010 |
20100275843 | HVPE REACTOR ARRANGEMENT - An HVPE reactor arrangement comprises a reaction chamber ( | 11-04-2010 |
20100275844 | DEPOSITION APPARATUS - In a deposition apparatus according to an embodiment of the present invention, a buffer unit is provided between a vaporizer and a reactor of a vaporization supply system to temporarily store source gas, thus, before and when the source gas is supplied to the reactor, the variations of the internal pressure of the vaporizer can be reduced to supply the constant amount of source gas of to reaction spaces, thereby depositing a thin film having a uniform thin-film thickness. | 11-04-2010 |
20100307415 | SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF - A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space. | 12-09-2010 |
20110011338 | FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures. | 01-20-2011 |
20110017138 | PAINTING DEVICE - A device for applying paint, said device comprising a paint applicator ( | 01-27-2011 |
20110041764 | BATCH PROCESSING PLATFORM FOR ALD AND CVD - A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table. | 02-24-2011 |
20110067629 | METHOD AND DEVICE TO VARY GROWTH RATE OF THIN FILMS OVER SEMICONDUCTOR STRUCTURES - Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces. | 03-24-2011 |
20110073038 | GAS DISTRIBUTION PLATE AND APPARATUS USING THE SAME - The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber. | 03-31-2011 |
20110083606 | EXHAUST GAS TREATMENT DEVICE FOR A CVD DEVICE, CVD DEVICE, AND EXHAUST GAS TREATMENT METHOD - An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, in particular an LPCVD process. An aftertreatment chamber is provided into which ammonia gas can be metered. In addition, a CVD device and an exhaust gas treatment method are described. | 04-14-2011 |
20110083607 | VAPOR PHASE SELF-ASSEMBLED MONOLAYER COATING APPARATUS - Provided is a vapor phase self-assembled monolayer (SAM) coating apparatus having a small volume and reduced manufacturing costs. The apparatus includes: a chamber for providing space in which at least one substrate is mounted; one or more injection apparatuses, installed at a side of the chamber and in the form of an injector; and one or more supply units for supplying a liquid precursor into the precursor injection apparatus. | 04-14-2011 |
20110088621 | Organic Vapor Jet Deposition Using an Exhaust - Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source. | 04-21-2011 |
20110155055 | CVD DEVICE - A CVD device includes a reaction chamber, a support device, a gas input assembly and a gas output device. The support device is positioned in the reaction chamber. The gas input assembly and a gas output assembly are connected to the reaction chamber respectively. The gas input assembly includes a main body positioned in the reaction chamber and a plurality of gas jets uniformly positioned on the main body, introducing mixed gas to the reaction chamber uniformly. | 06-30-2011 |
20110162580 | HIGH TEMPERATURE ALD INLET MANIFOLD - A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, easily purged reactant lines. Integral passageways and metal seals avoid o-rings and attendant dead zones along flow paths. The manifold includes an internal inert gas channel for purging reactant lines within the block inlet manifold | 07-07-2011 |
20110209662 | VACUUM PROCESSING CHAMBER MANUFACTURED BY ALUMINUM CASTING - The present invention provides a method for manufacturing a vacuum processing chamber comprising a volume which is defined by a wall and which can be evacuated, said wall being made of aluminum by casting, said wall comprising an outer face and an inner face, said inner face faces the volume, and a method for improving the inner face of the wall of a vacuum processing chamber, wherein the inner face of said wall is smoothened by grinding and is subsequently pearl-blasted or shot-blasted. Vacuum processing chambers obtained by said methods are provided too. | 09-01-2011 |
20110220023 | NITROGEN GAS INJECTION APPARATUS - The present invention relates to a nitrogen gas injection apparatus for semiconductor fabrication equipment or LCD fabrication equipment, which can be simply manufactured and which thus reduces manufacturing costs, and which enables a nitrogen gas injection direction to correspond to the flow direction of reaction by-products, to thereby inject nitrogen gas in an effective manner without disturbing the flow of reaction by-products. The nitrogen gas injection apparatus comprises: a pair of flanged pipes having flanges; a ring-shaped injection nozzle coupled along the inner wall of one of the flanged pipes coupled together, to supply nitrogen gas into the flanged pipes; and a nitrogen supply line connected to the injection nozzle to supply nitrogen gas. The interior of the injection nozzle has a hole to enable the nitrogen gas supplied in a circumferential direction to flow, and a plurality of injection holes communicating with the hole to inject the supplied nitrogen gas into the flanged pipes. The injection holes are formed at the position protruding from the inner surface of one of the flanged pipes to inject nitrogen gas in the flow direction of reaction by-products. | 09-15-2011 |
20110232568 | HYBRID GAS INJECTOR - A gas injector for use in injecting process gas into a space in a vertical furnace between a tower supporting multiple wafers and a tubular liner includes a tubular straw having an open distal end and a first bore extending along a first axis and composed of a first single material selected from the group consisting of silicon, quartz, and silicon carbide, and a connector detachably connected to the straw section, composed of a second material other than the first material and including a supply tube having a second bore extending along a second axis perpendicular to the first axis and in fluid communication with the first bore and having a distal end connectable to a gas supply line. | 09-29-2011 |
20110239940 | VAPOR PHASE DEPOSITION SYSTEM - A showerhead for vacuum deposition of several species, said showerhead being divided into several quarters containing each at least one outlet for said species, each of said quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species. | 10-06-2011 |
20110247557 | DEVICE FOR SEALING A CHAMBER INLET OR A CHAMBER OUTLET FOR A FLEXIBLE SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR ASSEMBLING SUCH A DEVICE - The present disclosure relates to a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, comprising a body having a sealing surface, a substrate opening formed in the body configured to be traversed by the flexible substrate, an elastic tube at least partially facing the sealing surface, wherein the elastic tube has a connecting portion for connecting to a gas supply and being adapted for inflating and deflating during operation. Further, the present disclosure relates to a substrate processing apparatus for processing a flexible substrate, the substrate processing apparatus comprising a first chamber and a second chamber separated from the first chamber, and a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, the device comprising a body having a sealing surface, a substrate opening formed in the body configured to be traversed by the flexible substrate, an elastic tube at least partially facing the sealing surface, wherein the elastic tube has a connecting portion for connecting to a gas supply and being adapted for inflating and deflating during operation, wherein the device selectively opens or closes a fluid connection between the first and the second chamber. Additionally, the present disclosure relates to a method for assembling a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, comprising providing a body having a sealing surface, wherein a substrate opening is formed in the body configured to be traversed by the flexible substrate; inserting an elastic tube into the body, such that the elastic tube is facing at least partially the sealing surface, the elastic tube having a connecting portion and being adapted for inflating and deflating during operation; and connecting the connecting portion of the elastic tube to a gas supply. | 10-13-2011 |
20110253046 | APPARATUS FOR PROVIDING UNIFORM GAS DELIVERY TO A REACTOR - A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice array and the work-piece deposition surface. | 10-20-2011 |
20110265719 | REACTION CHAMBER - A reaction chamber for an atomic layer deposition reactor is provided. The reaction chamber includes outer walls for providing a reaction space inside the reaction chamber. At least one of the outer walls of the reaction chamber is made from a flexible thinsheet. | 11-03-2011 |
20110277688 | DYNAMIC SUPPORT SYSTEM FOR QUARTZ PROCESS CHAMBER - One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism. | 11-17-2011 |
20110290182 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS - It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber. | 12-01-2011 |
20110303147 | ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space. | 12-15-2011 |
20120000422 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION - Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel. | 01-05-2012 |
20120024227 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 02-02-2012 |
20120031332 | Water cooled gas injector - A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O | 02-09-2012 |
20120042828 | SLIT VALVE FOR VACUUM CHAMBER MODULE - A slit valve assembly is configured for attachment to a vacuum chamber module to seal a slot opening in a wall of the module in a closed position and to provide access through the slot opening in an open position. The valve assembly includes a rotatable shaft driven by a rotary actuator between an open rotational position and a closed rotational position. An elongated seal plate seals against the module wall over the slot opening in the closed rotational position of the shaft. At least one arm member connects the seal plate with the shaft. The arm member rotates with the shaft and is pivotally attached to the seal plate. The seal plate is biased to an articulated position relative to the arm member. | 02-23-2012 |
20120067282 | REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly. | 03-22-2012 |
20120067283 | Systems and Methods for Forming Metal Oxide Layers - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds. | 03-22-2012 |
20120079984 | GAS MIXER AND MANIFOLD ASSEMBLY FOR ALD REACTOR - A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer. | 04-05-2012 |
20120085283 | CORRECTION PLATE AND COATING DEVICE USING SAME - A correction plate includes a supporting plate, a first moving blade array, a second moving blade array, a number of driving devices, and a control module. The first moving blade array and the second moving blade array are located at two opposite sides of the supporting plate. Each of the first moving blade array and the second moving blade array includes a number of blades aligned with each other. The driving devices are positioned on the supporting plate and connected to the blades correspondingly. The control module controls the driving devices to drive the blades to protrude from the two opposite sides of the supporting plate. | 04-12-2012 |
20120103257 | DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing. | 05-03-2012 |
20120145078 | SHOWERHEAD INTEGRATING INTAKE AND EXHAUST - A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process. | 06-14-2012 |
20120222614 | SELF-CLOSING EMBEDDED SLIT VALVE - A slit valve module includes two solenoid valves and a cover plate with magnetic material or magnetically attractable material, one of the solenoid valves is positioned above or under the plate and another one of the solenoid valves is positioned at a side of the plate. These two solenoid valves can respectively generate horizontally and vertically magnetic forces, thereby facilitating operate of the plate. When the slit valve is closed, the slit valve can employ the weight of the plate to fall down. Moreover, when the plate approaches the vacuum chamber, the pressure difference can draw the plate. Therefore, the existing gravity and vacuum resources can be taken advantage of to use minimum magnetic energy to control the slit valve effectively and efficiently. | 09-06-2012 |
20120240853 | LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER - Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber. | 09-27-2012 |
20120272900 | LATERAL FLOW ATOMIC LAYER DEPOSITION DEVICE - A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases. | 11-01-2012 |
20120291705 | METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION - A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple. CVD procedures. Further, a gas injector system provided includes a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically. | 11-22-2012 |
20120304930 | CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES - Apparatuses and systems are disclosed for exhausting by-products from a processing chamber. In an embodiment, a dual exhaust system for removing by-products from a processing chamber includes a first exhaust line and a second exhaust line with each line having a pressure control valve and a particle trap for removing by-products. A portion of the first exhaust line may be coupled in parallel with the second exhaust line. The second exhaust line can be isolated from the first exhaust line and cleaned while the first exhaust line is removing by-products from the processing chamber or vice versa. In one embodiment, an exhaust system for removing by-products from a processing chamber includes an exhaust line and valves for removing the by-products. The valves are designed to operate at a high temperature such that the heated by-products are in a vapor phase while being removed through the exhaust line. | 12-06-2012 |
20120304931 | Carbon-Based Containment System - A containment system, for instance, for containment of heat and/or chemical gases, is described, for instance, carbon-based containment systems that can include an insulation segment, a shield segment, and/or a divider segment, wherein each can be a plurality of panels, such as wall panels, that form walls. | 12-06-2012 |
20120312231 | APPARATUS FOR THIN-FILM DEPOSITION - An apparatus | 12-13-2012 |
20130008381 | TRAP APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A trap apparatus provided between a chamber and an evacuating unit includes an inlet port and an exhausting port to be respectively connected to the chamber and the evacuating unit; a cooling trap portion provided with a first space for cooling gas in the first space; and a bypass portion provided with a first channel capable of communicating between the inlet port and the first space, a second channel capable of communicating between the first space and the exhausting port, and a second space capable of communicating between the inlet port and the exhausting port, the bypass portion being relatively movable with respect to the cooling trap portion to selectively form a first path from the inlet port to the exhausting port via the first channel, the first space and the second channel, and a second path from the inlet port to the exhausting port via the second space. | 01-10-2013 |
20130014698 | MODULAR GAS INJECTION DEVICEAANM Kools; Jacques Constant StefanAACI Simiane CollongueAACO FRAAGP Kools; Jacques Constant Stefan Simiane Collongue FR - Embodiments of the device relate to a modular injector ( | 01-17-2013 |
20130047921 | SOURCE AND ARRANGEMENT FOR PROCESSING A SUBSTRATE - A source for feeding one or more gaseous precursors onto a surface of a substrate and an arrangement for processing the substrate by way of subjecting the surface of the substrate to alternately repetitive surface reactions of the precursors, the source including a gas feed member for feeding at least one or more precursors onto the surface of the substrate. The gas feed member is adapted rotatable about a rotation axis, the rotation axis being arranged to extend substantially parallel to the surface of the substrate. | 02-28-2013 |
20130118405 | FLUID COOLED SHOWERHEAD WITH POST INJECTION MIXING - A showerhead that injects two process gases into the processing chamber via separate sets of holes. The showerhead is constructed of upper plate and lower plate. Upper plate has a first set of holes. The lower plate has two sets of holes: one set is aligned with the holes in the upper plate, while the second set has no corresponding holes in the upper plate. Both sets of holes in the lower plate are made to have two different diameters: a larger diameter extending from the top surface of the lower plate, while a smaller diameter extends from the bottom surface and meets with the larger diameter. A set of pipes are inserted through the holes in the upper plate and the corresponding holes in the lower plate, and are sealingly brazed to both plates. Cooling channels may be provided in the lower plate. | 05-16-2013 |
20130152857 | Substrate Processing Fluid Delivery System and Method - Embodiments provided herein describe substrate processing fluid delivery systems and methods. The substrate processing fluid delivery systems include a flow regulator. A fluid conduit assembly is coupled to the flow regulator and a processing chamber of a substrate processing apparatus. A plurality of processing fluid containers is coupled to the fluid conduit assembly. A plurality of valves is coupled to the fluid conduit assembly. The plurality of valves are configurable to selectively place each of the plurality of processing fluid containers in fluid communication with only the flow regulator or the processing chamber of the substrate processing apparatus through the fluid conduit assembly. | 06-20-2013 |
20130160709 | VAPOR FLOW CONTROL APPARATUS FOR ATOMIC LAYER DEPOSITION - A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor. | 06-27-2013 |
20130180451 | SUBSTRATE TREATMENT SYSTEM - The present invention addresses the problem of providing a substrate treatment system for making it possible to keep the inside of a chamber at a stable pressure, even when a variance occurs in the supply flow rate of an inert gas, and for making it possible to increase the supply flow rate of the inert gas and reduce the duration of time needed to fill with the inert gas during an initial operation. The present invention adopts a configuration provided with: a substrate treatment section for carrying out a predetermined treatment on the substrate; a chamber for accommodating the substrate treatment section in a sealed state; a gas supply unit for supplying an inert gas to inside the chamber; and a gas exhaust unit for discharging the gas inside the chamber; the supply flow rate of the inert gas of the gas supply unit and the exhaust flow rate of the gas exhaust unit being adjusted so that the pressure inside the chamber reaches a chamber setting pressure higher than the pressure outside the chamber. | 07-18-2013 |
20130199446 | APPARATUS - Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head. | 08-08-2013 |
20130206066 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus includes a reaction chamber, a main disk installed in the reaction chamber, and a gas discharging unit disposed outside the main disk. The gas discharging unit recollects a gas in the reaction chamber, and includes: a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, and is ring-shaped with an open upper portion. At least one through hole is formed in the lower wall. A discharge sleeve is configured to be inserted into the through hole, wherein a gas outlet is formed in the discharge sleeve. An upper cover that is ring-shaped covers the open upper portion of the base member. A plurality of gas inlets are formed in the upper cover. | 08-15-2013 |
20130239889 | VALVE PURGE ASSEMBLY FOR SEMICONDUCTOR MANUFACTURING TOOLS - A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated. | 09-19-2013 |
20130269608 | APPARATUS, METHOD AND REACTION CHAMBER - The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel. | 10-17-2013 |
20130284092 | FACEPLATE HAVING REGIONS OF DIFFERING EMISSIVITY - Gas distribution apparatus for use in substrate processing chambers are disclosed. In some embodiments, gas distribution apparatus may include a faceplate to distribute a gas to a substrate. The faceplate includes a first side that faces the substrate. A central region of the first side has a first surface finish and a peripheral region of the first side has a second surface finish different than the first. A plurality of gas distribution holes are disposed through the faceplate to allow the gas to pass through the faceplate to a volume disposed on the first side of the faceplate. A rabbet may be disposed along an outer periphery of the faceplate on the first side with a ring disposed in the rabbet and removably coupled to the faceplate to form the peripheral region. The ring has a second side having the second surface finish that faces the substrate during use. | 10-31-2013 |
20130327273 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The apparatus includes: a process chamber configured to accommodate substrates which are horizontally oriented and stacked in multiple stages and process the substrates; a process gas supply unit configured to supply a process gas to the process chamber; an inert gas supply unit configured to supply an inert gas to the process chamber; and an exhaust unit configured to exhaust the process chamber. The process gas supply unit includes a process gas supply nozzle. The inert gas supply unit includes inert gas supply nozzles disposed at both sides of the process gas supply nozzle. Each of the inert gas supply nozzles includes at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked. | 12-12-2013 |
20140041585 | EXHAUST GAS PROCESSING CONDUIT, MANUFACTURING APPARATUS AND GAS FLOW GUIDING METHOD THEREOF - An exhaust gas processing conduit includes a main pipe and a purge pipe. The main pipe has a first sidewall and a connecting port formed on the first sidewall. The purge pipe has one end connected to the first sidewall via the connecting port. The purge pipe has a second sidewall in contact with the first sidewall at an oblique angle. A gas provided by the purge pipe is injected along the first sidewall and into the main pipe so as to guide the gas flowing along a spiral route at the oblique angle. In addition, a manufacturing apparatus and a gas flow guiding method thereof are also disclosed in the invention. | 02-13-2014 |
20140053776 | GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM - A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced. | 02-27-2014 |
20140083360 | PROCESS CHAMBER HAVING MORE UNIFORM GAS FLOW - Embodiments of process chambers having flow path defining components that may provide more uniform gas flow are provided herein. In some embodiments, a process chamber lid to provide more uniform gas flow may include a dome; an outwardly extending flange disposed about a peripheral edge of the dome; and an upwardly sloped portion coupling the peripheral edge of the dome to the outwardly extending flange, wherein a portion of the outwardly extending flange and a portion of the upwardly sloped portion form a flow path with an interior surface of a process chamber when the process chamber lid is disposed atop the process chamber to provide a flow of gas towards an interior of the process chamber, wherein an angle between the upwardly sloped portion and a bottom surface of the outwardly extending flange is less than 90 degrees. | 03-27-2014 |
20140102365 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 04-17-2014 |
20140116336 | SUBSTRATE PROCESS CHAMBER EXHAUST - Exhaust systems for substrate process chambers are provided herein. In some embodiments, an exhaust for a process chamber configured to process a substrate having a given width may include a body having an internal cavity and an opening disposed in a first side of the body, the opening fluidly coupled to the internal cavity; a plurality of through holes disposed through a second side of the body, the plurality of through holes fluidly coupled to the internal cavity, wherein the plurality of through holes are disposed symmetrically about the body with respect to a central axis of the body such that the plurality of through holes provide an equal length and pressure drop from the opening to each respective through hole; and a plurality of conduits, each having a first open end respectively coupled to the plurality of through holes. | 05-01-2014 |
20140144381 | METHOD FOR WASHING SEMICONDUCTOR MANUFACTURING APPARATUS COMPONENT, APPARATUS FOR WASHING SEMICONDUCTOR MANUFACTURING APPARATUS COMPONENT, AND VAPOR PHASE GROWTH APPARATUS - A semiconductor manufacturing apparatus component ( | 05-29-2014 |
20140165908 | TRANSFER CHAMBER AND METHOD OF USING A TRANSFER CHAMBER - An ion implanter and method for facilitating expeditious performance of maintenance on a component of the ion implanter in a manner that reduces downtime while increasing throughput of the ion implanter. The ion implanter includes a process chamber, a transfer chamber connected to the process chamber, a first isolation gate configured to controllably seal the transfer chamber from the process chamber, and a second isolation gate configured to controllably seal the transfer chamber from an atmospheric environment, wherein a component of the ion implanter can be transferred between the process chamber and the transfer chamber for performing maintenance on the component outside of the process chamber. Performing maintenance on a component of the ion implanter includes the steps of transferring the component from the process chamber to the transfer chamber, sealing the transfer chamber, venting the transfer chamber to atmospheric pressure, an opening the transfer chamber to an atmospheric environment. | 06-19-2014 |
20140165909 | Manufacturing Apparatus For Depositing A Material On A Carrier Body - A gasket is used in a manufacturing apparatus, which deposits a material on a carrier body. A reaction chamber is defined by a housing and a base plate of the manufacturing apparatus. The gasket is disposed between the housing and the base plate for preventing a deposition composition, which comprises the material to be deposited or a precursor thereof, from escaping the reaction chamber. The gasket comprised a flexible graphite material for preventing the gasket from contaminating the material within said reaction chamber. | 06-19-2014 |
20140174352 | APPARATUS FOR PROCESSING WAFERS - A wafer processing apparatus includes a first tube extending in a vertical direction, a second tube arranged in the first tube and defining a reaction chamber, the reaction chamber being configured to receive a boat that holds a plurality of wafers, first and second gas nozzles in the second tube, the first and second gas nozzles being configured to supply first and second reaction gases, respectively, and being spaced apart from each other along a circumferential direction of the second tube to define a central angle of at about 50° to about 130° with respect to a center of the second tube, and an exhaust portion configured to exhaust residual gas from the reaction chamber, the exhaust portion including an exhaust slit in the second tube and an exhaust space between the first tube and the second tube. | 06-26-2014 |
20140190409 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 07-10-2014 |
20140209023 | GAS SUPPLY DEVICE, PROCESSING APPARATUS, PROCESSING METHOD, AND STORAGE MEDIUM - A gas supply device | 07-31-2014 |
20140216341 | CHEMICAL VAPOR DEPOSITION REACTOR - A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition. | 08-07-2014 |
20140245955 | INJECTION SYSTEM FOR AN APPARATUS FOR DEPOSITING THIN LAYERS BY VACUUM EVAPORATION - An injection system for an apparatus for depositing thin layers by vacuum evaporation includes a container ( | 09-04-2014 |
20140261174 | APPARATUS FOR PROCESSING WAFERS - A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess. | 09-18-2014 |
20140261175 | SELF-CENTERING PROCESS SHIELD - A process shield may include an elongated annular body having an outer surface and an inner surface; a lip extending radially outward from the outer surface of the body proximate a first end of the body such that a first portion of the body extends beyond the lip toward the first end; a plurality of openings in the lip; and a pin disposed in each of the plurality of openings to align the target assembly atop the process shield when the lid is placed atop the process shield, wherein the pin comprises an elongated body having a first surface with a beveled peripheral edge, wherein the first surface has a first diameter, a second surface opposing the first surface, wherein the second surface has a second diameter, and a sidewall, between the first surface and the second surface, wherein the sidewall has a concave portion having a third diameter. | 09-18-2014 |
20140261176 | PUMPING LINER FOR CHEMICAL VAPOR DEPOSITION - One or more pumping liners are provided for use in chemical vapor deposition (CVD). A pumping liner encircles a deposition chamber within which a wafer is placed and into which a precursor is introduced to form a thin film on a surface of the wafer. The pumping liner regulates a rate and uniformity at which a gas is removed from the deposition chamber, which in turn affects a duration or degree to which different portions of the wafer are exposed to the precursor. Controlling exposure of the wafer to the precursor promotes uniformity of the film formed on the wafer as well an ability to regulate the thickness of the film formed on the wafer. In an embodiment, a pumping liner has at least one of relatively small liner apertures, an increased number of liner apertures or a non-uniform distribution of liner apertures within a body of the pumping liner. | 09-18-2014 |
20140290577 | METHOD OF CONTROLLING GAS SUPPLY APPARATUS AND SUBSTRATE PROCESSING SYSTEM - Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line. | 10-02-2014 |
20140299058 | DEPOSITION DEVICE, AND COLLECTION DEVICE | 10-09-2014 |
20140326181 | DEPOSITION APPARATUS - A deposition apparatus includes: a chamber; a stage disposed in the chamber and equipped with a substrate; a nozzle unit disposed to face the substrate and configured to spray a deposition material toward the substrate; and a collector unit surrounding the nozzle unit and configured to collect a residual deposition material not deposited on the substrate. The collector unit includes a collection surface for collecting the residual deposition material and a collection pipe for transferring the collected residual deposition material outside the chamber. Thus, a loss of the deposition material may be minimized during a deposition process. | 11-06-2014 |
20140345525 | COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER - Embodiments disclosed herein relate to coated liner assemblies for use in a semiconductor processing chamber. In one embodiment, a liner assembly for use in a semiconductor processing chamber includes a liner body having a cylindrical ring form and a coating layer coating the liner body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. In another embodiment, an apparatus for depositing a dielectric layer on a substrate includes a processing chamber having an interior volume defined in a chamber body of the processing chamber, a liner assembly disposed in the processing chamber, wherein the liner assembly further comprises a liner body having a cylindrical ring form, and a coating layer coating an outer wall of the liner body and facing the chamber body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. | 11-27-2014 |
20140345526 | COATED LINER ASSEMBLY FOR A SEMICONDUCTOR PROCESSING CHAMBER - Embodiments disclosed herein relate to coated liner assemblies for use in a semiconductor processing chamber. In one embodiment, a liner assembly for use in a semiconductor processing chamber includes a liner body having a cylindrical ring form and a coating layer coating the liner body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. In another embodiment, an apparatus for depositing a dielectric layer on a substrate includes a processing chamber having an interior volume defined in a chamber body of the processing chamber, a liner assembly disposed in the processing chamber, wherein the liner assembly further comprises a liner body having a cylindrical ring form, and a coating layer coating an outer wall of the liner body and facing the chamber body, wherein the coating layer is opaque at one or more wavelengths between about 200 nm and about 5000 nm. | 11-27-2014 |
20140345527 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD, AND METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - A vapor deposition device ( | 11-27-2014 |
20150007770 | MULTI-PLENUM, DUAL-TEMPERATURE SHOWERHEAD - A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead. | 01-08-2015 |
20150007771 | GAS INLET MEMBER OF A CVD REACTOR - A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate. | 01-08-2015 |
20150013605 | COATING DEVICE AND ASSOCIATED OPERATING METHOD - A coating device, e.g., for painting motor vehicle bodies, comprises a sprayer for applying a coating material by means of an application element and an internal color-changer valve assembly, said assembly having several color inlets for selecting coating materials of different colors. The internal color-changer valve assembly is integrated into the sprayer and is connected by its outlet to the application element, in order to feed the selected coating material to the application element. Further, an external color-changer valve assembly has several color inlets for selecting coating materials of different colors, said external color-changer assembly having a separate structure from the sprayer and being connected by its outlet to the application element, in order to feed the selected coating material to the application element. An operating method corresponds to the device. | 01-15-2015 |
20150020734 | STRUCTURE FOR IMPROVED GAS ACTIVATION FOR CROSS-FLOW TYPE THERMAL CVD CHAMBER - Embodiments described herein generally relate to a processing apparatus having a preheat ring for preheating the process gas. The preheat ring is disposed on a ring support. The preheat ring may have a segment adjacent a process gas inlet. The segment includes a top surface, and the top surface includes features to increase the surface area. In one embodiment, the feature is a plurality of protrusions. In another embodiment, the feature is a plurality of linear fins. In another embodiment, the preheat ring includes a first sub ring and a second sub ring disposed on the first sub ring, wherein the features are located on one segment of the second sub ring. | 01-22-2015 |
20150027371 | VAPOR DEPOSITION APPARATUS - A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit. | 01-29-2015 |
20150053134 | SOURCE CONTAINER AND VAPOUR-DEPOSITION REACTOR - The present invention relates to a source container and to a vapour-deposition reactor. The source container according to one embodiment of the present invention comprises: a container comprising an inner wall for delimiting a first space for holing a source material, and a second space which is adjacent to the first space and is for the mixing of vapour emitted from the source material and a carrier gas taken into the inside thereof; a carrier gas inflow pathway which connects the outside of the container second space; a mixed gas discharge pathway which connects the outside of the container and the second space; and a flow-limiting member which expands inside the second space, and provides a first flow barrier surface between the inflow port and the discharge port. | 02-26-2015 |
20150075427 | Porous Organosilicate Layers, and Vapor Deposition Systems and Methods for Preparing Same - A vapor deposition system includes a deposition chamber having a substrate positioned therein. The system includes at least one vessel containing at least one silsequioxane precursor. The system includes at least one vessel containing at least one wetting agent or surfactant. The system includes at least one vessel containing a carboxylic acid or nitrogen base. The system includes a source for at least one reaction gas. | 03-19-2015 |
20150107515 | VACUUM PROCESSING APPARATUS - The disclosure provides an assembly method of a vacuum processing apparatus having a reaction vessel and an exhaust port that are made of quartz and airtightly connected to each other, in order to prevent breakage of the vessel. The method includes (a) mounting an attachment member on one end portion of the reaction vessel, (b) connecting and fixing at least a flange portion of an exhaust pipe to the exhaust port, (c) fixing the attachment member to a portion of the exhaust pipe including at least the flange portion connected and fixed to the exhaust port by using fixing members after (a) and (b), (d) fixing the attachment member to a support portion after (a), and (e) fixing the exhaust pipe to an exhaust pipe fixing portion different from the attachment member at a lower position than a fixing position of the attachment member after completing (a) to (d). | 04-23-2015 |
20150295207 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND DONOR SUBSTRATE AND DONOR SUBSTRATE SET USED TO MANUFACTURE THE ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device, a method of manufacturing the same, and a donor substrate and a donor substrate set used to manufacture the organic light-emitting display device. According to an aspect of the present invention, there is provided an organic light-emitting display device comprising a substrate which comprises a green region and a red region, a plurality of first electrodes which are formed on the green region and the red region of the substrate, respectively, a plurality of light-emitting layers which are formed on the first electrodes and comprise a green light-emitting layer formed on the green region and a red light-emitting layer formed on the red region, and a second electrode which is formed on the light-emitting layers, wherein the green light-emitting layer comprises a first light-emitting layer which comprises a first host material and a first dopant material and a first buffer layer which is formed on the first light-emitting layer and comprises the first host material, and the red light-emitting layer comprises a second light-emitting layer which comprises a second host material and a second dopant material and a second buffer layer which is formed on the second light-emitting layer and comprises the first host material. | 10-15-2015 |
20150322566 | CVD SYSTEM HAVING PARTICLE SEPARATOR - The invention relates to a device for coating substrates in a process chamber ( | 11-12-2015 |
20150361554 | SUBSTRATE PROCESSING APPARATUS - A mechanism includes a shower head; and a process space installed at a downstream side of the shower head. The shower head includes: a lid of the shower head having a through hole formed therein; a first dispersion mechanism having a front end to be inserted into the through hole and the other end connected to a gas supplier; a gas guide including a plate part configured to be widened in a downward direction, and a connecting part installed between the plate part and the lid, the connecting part having at least one hole formed therein; and a second dispersion mechanism installed at a downstream side of the gas guide. | 12-17-2015 |
20150368795 | INLET AND REACTING SYSTEM HAVING THE SAME - An inlet and a reacting system having the same are disclosed. The inlet includes a body provided therein with a transport duct allowing a fluid to flow therethrough, at least one first nozzle connected to one region of a lateral surface of the body and adapted to spray a cleaning solution into the transport duct, and a blocking sheet disposed in the transport duct to be spaced apart from an inner wall of the transport duct, wherein the cleaning solution sprayed from the first nozzle is blocked from being introduced into one region of the transport duct positioned inside the blocking sheet. | 12-24-2015 |
20150376793 | INDEXED GAS JET INJECTOR FOR SUBSTRATE PROCESSING SYSTEM - Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a indexed jet injector for use in a process chamber may include a body having a substantially cylindrical central volume, a gas input port disposed on a first surface of the body, a gas distribution channel formed in the body fluidly coupled to the gas input port and to the cylindrical central volume, a gas distribution drum disposed within the cylindrical central volume and rotabably coupled to the body, the gas distribution drum having a plurality of jet channels formed through the gas distribution drum, and a plurality of indexer output ports formed on a second surface of the body, wherein each of the plurality of jet channels fluidly couple the gas input port to at least one of the plurality of indexer output ports at least once per 360° rotation of the gas distribution drum. | 12-31-2015 |
20160002787 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a shower head configured to disperse a gas; a process vessel installed at a downstream side of the shower head and configured to have a process space that allows a substrate to be processed by a process gas therein; a gas supplier connected to the shower head; a shower head gas exhauster connected to the shower head; and a capturing assembly configured to capture a component different from the process gas within the shower head. | 01-07-2016 |
20160005631 | APPARATUS FOR COUPLING A HOT WIRE SOURCE TO A PROCESS CHAMBER - Apparatus for coupling a hot wire source to a process chamber is provided herein. In some embodiments, an apparatus for coupling a hot wire source to a process chamber may include: a housing having an open end and a through hole formed through a top and a bottom of the housing; and a filament assembly configured to be disposed within the housing, the filament assembly having a frame and a plurality of filaments disposed across the frame, wherein the plurality of filaments of the filament assembly are substantially parallel with the top and the bottom of the housing and at least a portion of the plurality of filaments are disposed within the through hole of the housing when the filament assembly is disposed within the housing. | 01-07-2016 |
20160047041 | NOZZLE FOR DEPOSITION SOURCE AND THIN FILM DEPOSITING APPARATUS INCLUDING THE NOZZLE - A deposition source nozzle including a convergence guide configured to guide a deposition source material discharged from the deposition source nozzle to a convergence direction with respect to the deposition source nozzle, and a divergence guide configured to guide the deposition source material discharged from the deposition source nozzle to a divergence direction with respect to the deposition source nozzle, the divergence direction being opposite to the convergence direction with respect to the discharging direction of the deposition source material. | 02-18-2016 |
20160060757 | REACTOR OF SUBSTRATE PROCESSING APPARATUS - Provided is a reactor of a substrate processing apparatus. The reactor of the substrate processing apparatus is a reactor of a substrate processing apparatus for processing at least one substrate, the reactor having a horizontal cross-section provided in a shape having at least two curvature radii. | 03-03-2016 |
20160068995 | SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME - A shield member and an apparatus for growing a single crystal equipped with the shield member. Such a shield member includes: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed. The shield member is configured such that the heat capacity thereof increases from the center to the outer periphery. | 03-10-2016 |
20160115590 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR - A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation. | 04-28-2016 |
20160122874 | INJECTOR HEAD FOR ATOMIC LAYER DEPOSITION - An injector head for atomic layer deposition on a substrate, comprising a plurality of bars coupled to a connection unit. The bars have side walls with a spacer profile, respectively stacked against side walls of a neighbouring bar to form a plurality of stacked bars. The bars comprise slots extending over a length of the bar in communication with a respective slot in the connection unit. A flow path is defined through the bar with a relatively low friction factor to form a respective precursor drain; reactant drain or barrier gas drain. The spacer profiles define slits extending between adjacent bars in communication with a respective slot in the connection unit. A further flow path is formed along the bar with a relatively high friction factor, to form a respective precursor gas supply; reactant gas supply or flow barrier. | 05-05-2016 |
20160133778 | DYNAMIC SUPPORT SYSTEM FOR QUARTZ PROCESS CHAMBER - One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism. | 05-12-2016 |
20160148824 | Method and Apparatus of Manufacturing a Semiconductor Device by Forming a Film on a Substrate - Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: (a) forming a discontinuous first layer including the first element and having a thickness of less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate; and (b) forming a second layer including the first element and the second element by supplying a gas containing the second element into the process vessel to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated. | 05-26-2016 |
20160186319 | SILICON CARBIDE STACK BOTTOM SEAL ARRANGEMENT - Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer shell, an insulation layer inwardly of the outer shell, a concentric inner shell inwardly of the outer shell, and a concentric liner that is positioned inwardly of the inner shell and that defines a reactor chamber. The inner shell and liner are sealed together at their bottoms by an O-ring seal arrangement to prevent gas in the reactor chamber from entering a space between the inner shell and the liner. A central inlet nozzle produces a vertical gas plume in the reactor chamber. | 06-30-2016 |
20160194756 | SEMICONDUCTOR PROCESSING APPARATUS HAVING GAS SPRAY UNIT | 07-07-2016 |
20160194784 | EPITAXIAL REACTOR | 07-07-2016 |
20160201193 | Substrate Processing Apparatus, Gas Dispersion Unit, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium | 07-14-2016 |
20160379904 | METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR EPITAXY STRUCTURE - A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed. | 12-29-2016 |
20190144991 | FILM STABILIZATION THROUGH NOVEL MATERIALS MODIFICATION OF BEAMLINE COMPONENTS | 05-16-2019 |
20190144995 | CHEMICAL VAPOR DEPOSITION APPARATUS | 05-16-2019 |
20190145003 | GAS TUBE, GAS SUPPLY SYSTEM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME | 05-16-2019 |
20220136108 | SEMICONDUCTOR MANUFACTURING METHOD - A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate. | 05-05-2022 |
20220139676 | METHOD OF MAKING A SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER - A method of making a semiconductor manufacturing apparatus member includes a step of preparing an aluminum base having an alumite layer having a porous columnar structure at an upper surface thereof. The alumite layer is an anodic oxidation film, and a Young's modulus of the alumite layer is between 90 GPa and 120 GPa. The method also includes a step of forming a particle-resistant layer on the alumite layer by aerosol deposition, in which an aerosol containing fine particles of a brittle material dispersed in a gas is ejected from a nozzle to impact against a surface of the alumite layer, wherein the particle-resistant layer includes a polycrystalline ceramic; and wherein, when the resulting semiconductor manufacturing apparatus member is exposed to a plasma in a reference plasma resistance test, the particle-resistant layer has an arithmetic average height Sa of 0.060 or less after the reference plasma test is completed. | 05-05-2022 |