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GAS OR VAPOR DEPOSITION

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118 - Coating apparatus

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Class / Patent application numberDescriptionNumber of patent applications / Date published
118722000 With treating means (e.g., jarring) 497
118728000 Work support 134
118719000 Multizone chamber 97
118726000 Crucible or evaporator structure 87
118720000 Having means to expose a portion of a substrate to coating medium 25
118718000 Running length work 21
118733000 Chamber seal 9
118716000 Means to coat or impregnate particulate matter 3
20110220024DEVICE FOR THE SYNTHESIS OF NANOPARTICLES BY FLUIDIZED-BED CHEMICAL VAPOUR DEPOSITION - A device for vapor deposition of chemical species on support grains of spherical or similar shape disposed in a fluidized bed. The device includes a first chamber including a fluidized bed in which a funnel-shaped fluidizer element is housed to receive support grains of spherical or similar shape; a second chamber in fluid flow connection with the first chamber to deliver precursors in a vapor phase of chemical species to be deposited on the support grains and to convey a fluidizing gas towards the first chamber; and a flute at an inlet to the fluidizer element to control distribution of the vapor phase precursors and the fluidizing gas within the fluidizer element. The distributor flute includes one or more outer grooves, each groove including a first portion oriented along the longitudinal axis of the flute and a second portion winding helically around the axis to generate a fluidizing gas vortex within the first chamber.09-15-2011
20110315079 Process Device for Coating Particles - The subject of the invention is a process device for coating particles that falls within the field of chemical and pharmaceutical technology. It represents an improvement on the process equipment for coating particles by spraying from the bottom and works on the principle of fluidization technology. The process device for coating particles, according to the invention which has within the wall (12-29-2011
20120085284MECHANICALLY FLUIDIZED REACTOR SYSTEMS AND METHODS, SUITABLE FOR PRODUCTION OF SILICON - Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon. Particulate may be provided to a heated tray or pan, which is oscillated or vibrated to provide a reaction surface. The particulate migrates downward in the tray or pan and the reactant product migrates upward in the tray or pan as the reactant product reaches a desired state. Exhausted gases may be recycled.04-12-2012
Entries
DocumentTitleDate
20100018463Plural Gas Distribution System - A plural gas distribution system is presented. The system includes a chamber and a showerhead. The chamber is configured to contain and to exhaust a plurality of gases. The showerhead includes at least one multi-channel gas delivery tube with at least two sub-tubes within the multi-channel gas delivery tube, wherein the at least two sub-tubes are configured to simultaneously expel gases unmixed into the chamber.01-28-2010
20100116206GAS DELIVERY SYSTEM HAVING REDUCED PRESSURE VARIATION - Embodiments of gas delivery systems for providing process gases sublimated from a solid precursor are provided herein. In some embodiments, a gas delivery system includes an ampoule to hold a solid precursor; a conduit coupled to the ampoule and configured to selectively deliver a sublimated process gas from the solid precursor to a process chamber or an exhaust system; and a flow restrictor disposed in the conduit between the ampoule and the exhaust system.05-13-2010
20100043707CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING APPARATUS - A cleaning method of a semiconductor manufacturing apparatus begins by introducing film forming gas include reaction gas not forming a film by itself to reaction chamber to form the film on a semiconductor substrate, decreasing pressure of the reaction chamber, solidifying or liquefying the reaction gas to form particles by using small-particles in the reaction chamber as cores, and exhausting the particles from the reaction chamber. Using this method, foreign small-particles can easily be removed from the apparatus and suppress any possible contamination of semiconductor substrates to be processed.02-25-2010
20090159003DEVICE FOR SUPPLYING ORGANIC METAL COMPOUND - A supplying device has two columnar containers 06-25-2009
20090159002Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution - A gas distribution plate for a plasma reactor has an annular gas distribution plenum with an array of gas injection holes and a gas injection port at one end of the annular plenum, the plenum being progressively constricted in cross-sectional area along its azimuthal path by a sloping ceiling.06-25-2009
20090159001Shower head of chemical vapor deposition apparatus - There is provided a shower head capable of spraying a process reaction gas onto the surface of a semiconductor wafer to deposit the process reaction gas on the surface of the semiconductor wafer as a thin film of uniform thickness.06-25-2009
20090120364GAS MIXING SWIRL INSERT ASSEMBLY - A gas mixing system for a semiconductor wafer processing chamber is described. The mixing system may include a gas mixing chamber concentrically aligned with a gas transport tube that extends to a blocker plate. The gas mixing chamber and the transport tube are separated by a porous barrier that increases a duration of gas mixing in the gas mixing chamber before processes gases migrate into the transport tube. The system may also include a gas mixing insert having a top section with a first diameter and a second section with a second diameter smaller than the first diameter and concentrically aligned with the top section. The processes gases enter the top section of the insert and follow channels through the second section that cause the gases to mix and swirl in the gas mixing chamber. The second section extends into the gas mixing chamber while still leaving space for the mixing and swirling around the sidewalls and bottom of the mixing chamber.05-14-2009
20090120363Gas Supply Pipe for Plasma Treatment - Peeling off of a deposited film formed on the outer surface of a gas supply pipe is effectively prevented, and adhesion of a deposited film which has been peeled off to the inner surface of a container or to a nozzle-sealed surface can be prevented as much as possible.05-14-2009
20080230007METHOD AND APPARATUS FOR MANUFACTURING ACTIVE MATRIX DEVICE INCLUDING TOP GATE TYPE TFT - A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.09-25-2008
20100095890GAS SUPPLY SYSTEM, PUMPING SYSTEM, COATING SYSTEM, GAS SUPPLY METHOD, AND PUMPING METHOD - A gas supply system 04-22-2010
20130047921SOURCE AND ARRANGEMENT FOR PROCESSING A SUBSTRATE - A source for feeding one or more gaseous precursors onto a surface of a substrate and an arrangement for processing the substrate by way of subjecting the surface of the substrate to alternately repetitive surface reactions of the precursors, the source including a gas feed member for feeding at least one or more precursors onto the surface of the substrate. The gas feed member is adapted rotatable about a rotation axis, the rotation axis being arranged to extend substantially parallel to the surface of the substrate.02-28-2013
20120103257DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER - Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.05-03-2012
20120222614SELF-CLOSING EMBEDDED SLIT VALVE - A slit valve module includes two solenoid valves and a cover plate with magnetic material or magnetically attractable material, one of the solenoid valves is positioned above or under the plate and another one of the solenoid valves is positioned at a side of the plate. These two solenoid valves can respectively generate horizontally and vertically magnetic forces, thereby facilitating operate of the plate. When the slit valve is closed, the slit valve can employ the weight of the plate to fall down. Moreover, when the plate approaches the vacuum chamber, the pressure difference can draw the plate. Therefore, the existing gravity and vacuum resources can be taken advantage of to use minimum magnetic energy to control the slit valve effectively and efficiently.09-06-2012
20110011338FLOW CONTROL FEATURES OF CVD CHAMBERS - Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.01-20-2011
20090260569CHEMICAL VAPOR DEPOSITION APPARATUS - There is provided a chemical vapor deposition apparatus improved in structure such that a reaction gas introduced into a reactor where deposition is performed flows at a substantially uniform rate to ensure a thin film is grown substantially uniformly on the deposition object. The chemical vapor deposition apparatus includes: a chamber; a reactor provided in the chamber to have a deposition object deposited therein; and a reservoir storing a reaction gas fed from the outside to introduce the reaction gas to the reactor, the reservoir having a cross-sectional area changing according to a flow path of the introduced reaction gas.10-22-2009
20090241833DRILLED CVD SHOWER HEAD - A shower head for a chemical vapor deposition chamber can comprise a plurality of first injectors for a first reactant gas and a plurality of second injectors for a second reactant gas. The first and second injectors can be interspersed among one another so as to enhance control of the mixing and delivery of reactant gases within the chemical deposition chamber. Cooling water can be communicated through a plurality of gun drilled bores formed intermediate injectors of the shower head. In this manner, enhanced control of the mixing and delivery of reactant gases can be provided.10-01-2009
20130160709VAPOR FLOW CONTROL APPARATUS FOR ATOMIC LAYER DEPOSITION - A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.06-27-2013
20090013931Continuous Growth Of Single-Wall Carbon Nanotubes Using Chemical Vapor Deposition - The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.01-15-2009
20090013930GAS DISTRIBUTOR WITH PRE-CHAMBERS DISPOSED IN PLANES - A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (01-15-2009
20090007846DIFFUSER GRAVITY SUPPORT - An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.01-08-2009
20110017138PAINTING DEVICE - A device for applying paint, said device comprising a paint applicator (01-27-2011
20120304930CHAMBER EXHAUST IN-SITU CLEANING FOR PROCESSING APPARATUSES - Apparatuses and systems are disclosed for exhausting by-products from a processing chamber. In an embodiment, a dual exhaust system for removing by-products from a processing chamber includes a first exhaust line and a second exhaust line with each line having a pressure control valve and a particle trap for removing by-products. A portion of the first exhaust line may be coupled in parallel with the second exhaust line. The second exhaust line can be isolated from the first exhaust line and cleaned while the first exhaust line is removing by-products from the processing chamber or vice versa. In one embodiment, an exhaust system for removing by-products from a processing chamber includes an exhaust line and valves for removing the by-products. The valves are designed to operate at a high temperature such that the heated by-products are in a vapor phase while being removed through the exhaust line.12-06-2012
20110277688DYNAMIC SUPPORT SYSTEM FOR QUARTZ PROCESS CHAMBER - One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.11-17-2011
20100170438GAS DISTRIBUTOR COMPRISING A PLURALITY OF DIFFUSION-WELDED PANES AND A METHOD FOR THE PRODUCTION OF SUCH A GAS DISTRIBUTOR - The invention relates to a gas distributor (07-08-2010
20120024227VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.02-02-2012
20100058984Substrate Processing Apparatus - Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.03-11-2010
20080289575METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS - An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.11-27-2008
20120291705METHODS AND APPARATUS FOR CONTROLLED CHEMICAL VAPOR DEPOSITION - A gas injector system is provided that allows for improved distribution and directional control of the vapor material in a CVD or CVI process. Gas injector systems may be used without experiencing significant clogging of gas injector tube apertures over multiple. CVD procedures. Further, a gas injector system provided includes a dual aperture release system and/or allow vapor material to flow both substantially horizontally and substantially vertically.11-22-2012
20090090301COMPENSATION PLATE USED IN A FILM COATING DEVICE - A compensation plate used in a film coating device includes a main body defining a plurality of guiding holes, a plurality of moveable blades connected to the main body, and a plurality of connectors. Each of the plurality of moveable blades defines two through holes corresponding to one of the plurality of guiding holes. The plurality of connectors engage in the through holes and the guiding holes, fix each of the plurality of moveable blades to the main body when each of the plurality of connectors is fastened, and slide in each of the plurality of guiding holes with each of the moveable blades when each of the plurality of connectors releases.04-09-2009
20080210163Independent Radiant Gas Preheating for Precursor Disassociation Control and Gas Reaction Kinetics in Low Temperature CVD Systems - A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.09-04-2008
20090288600APPARATUS FOR SUPPLYING SOURCE AND APPARATUS FOR DEPOSITION THIN FILM HAVING THE SAME - The present invention provides an apparatus for supplying a source and an apparatus for depositing a thin film having the same. The apparatus for supplying a source includes a horizontal channel extending in one direction; pumping and transfer ports extending to pass through the horizontal channel, the pumping and transfer ports being spaced apart from each other; a transfer shaft inserted into the horizontal channel to reciprocate therein; and a storage room connected to one side of the pumping port, the storage room storing and supplying a powder source, wherein the transfer shaft comprises at least one transfer hole for allowing the powder source supplied through the pumping port to be filled therein and to be transferred to an external apparatus through the transfer port. As described above, according to the present invention, a powder source filled in a transfer hole is supplied to an external apparatus by reciprocating a transfer shaft, so that the amount of the powder source supplied to the external apparatus can be quantitatively controlled as much as a fixed quantity corresponding to the internal volume of the transfer hole.11-26-2009
20080251015Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.10-16-2008
20080251014Substrate Processing Apparatus and Reaction Container - A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.10-16-2008
20100126418GAS SHOWER MODULE - A gas shower module for gas deposition chamber with gas channel is disclosed, which comprises: a distributor with at least one diffusion cell positioned therein along first axial direction and a plurality of inlets respectively connecting to the gas channel and the diffusion cell; and a shower with at least one shower channel positioned therein along second axial direction, gas-inlet passages connected to the diffusion cell and the shower channel, and gas-outlet passages connected to the shower channel and gas deposition chamber; wherein the distributor is connected to the shower so that the diffusion cell will be connected to the shower channel through gas-inlet passages and the first axial direction is not be parallel to the second axial direction.05-27-2010
20120085283CORRECTION PLATE AND COATING DEVICE USING SAME - A correction plate includes a supporting plate, a first moving blade array, a second moving blade array, a number of driving devices, and a control module. The first moving blade array and the second moving blade array are located at two opposite sides of the supporting plate. Each of the first moving blade array and the second moving blade array includes a number of blades aligned with each other. The driving devices are positioned on the supporting plate and connected to the blades correspondingly. The control module controls the driving devices to drive the blades to protrude from the two opposite sides of the supporting plate.04-12-2012
20080282978Process For Manufacturing A Gallium Rich Gallium Nitride Film - A process for the manufacture of a gallium rich gallium nitride film is described. The process comprises (a) preparing a reaction mixture containing a gallium species and a nitrogen species, the gallium species and the nitrogen species being selected such that, when they react with each other, gallium nitride is formed; and (b) growing the gallium rich gallium nitride film from the reaction mixture, by allowing the gallium species to react with the nitrogen species and to deposit gallium nitride on a substrate selected from the group consisting of silicon, glass, sapphire, quartz and crystalline materials having a lattice constant closely matched to gallium nitride, including zinc oxide, optionally with a zinc oxide buffer layer, at a temperature of from about 480° C. to about 900° C. and in the presence of a gaseous environment in which the partial pressure of oxygen is less than 1011-20-2008
20080308040Cvd Reactor Comprising a Gas Inlet Member - The invention relates to a device for depositing at least one layer on a substrate by means of a process gas which is introduced through a flow channel (12-18-2008
20080308041PLASMA PROCESSING APPARATUS - In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode 12-18-2008
20090178616APPARATUS FOR CHEMICAL VAPOR DEPOSITION (CVD) WITH SHOWERHEAD - Disclosed therein is a method of chemical vapor deposition (CVD) with a showerhead through which a source material gas comprising a reactive gas of at least one kind and a purge gas is injected over a substrate to deposit a film on the substrate, including the steps of: disposing the showerhead in such a way that the bottom surface of the showerhead is spaced apart from the substrate by a predetermined distance; supplying a source material gas into the showerhead, wherein reactive gases of different kinds are respectively injected into compartments formed inside the showerhead in such a way that each compartment of the showerhead is filled with the reactive gas of only one kind and a purge gas of the source material gas is supplied into another compartment formed inside the showerhead; and discharging the reactive gas and the purge gas respectively through a large number of reactive gas outlets and a large number of purge gas outlets formed on the bottom surface of the showerhead, the purge gas outlets being more in number than the reactive gas outlets.07-16-2009
20090178615SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME - There is provided a showerhead including: a first head having at least one gas conduit provided therein to allow a first reaction gas to be supplied into a reaction chamber; a second head having a hole of a predetermined size formed to have the gas conduit extending therethrough; and a gas flow path formed between the gas conduit extending through the hole and the hole to allow a second reaction gas to be supplied into the reaction chamber.07-16-2009
20090139451PROCESS OF MONITORING DISPENSING OF PROCESS FLUIDS IN PRECISION PROCESSING OPERATIONS - A process of monitoring the dispensing of process fluids in precision processing operations. A precision measuring instrument measures a cumulative amount of a process fluid dispensed to at least one dispensing station and compares that amount with a predetermined amount. An alarm is provided to an operator when the cumulative actual required amount of process fluid dispensed after a preset number of dispensations differs from the cumulative predetermined dispensed amount of that fluid by more than a preset percentage.06-04-2009
20090025639GAS INLET ELEMENT FOR A CVD REACTOR - The invention relates to a gas inlet element (01-29-2009
20120067283Systems and Methods for Forming Metal Oxide Layers - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.03-22-2012
20080264340MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS - A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber.10-30-2008
20090084315METHOD AND APPARATUS FOR PARTICLE FILTRATION AND ENHANCING TOOL PERFORMANCE IN FILM DEPOSITION - This disclosure pertains to a method and apparatus to permit changing a filter on the input line to a vacuum deposition chamber without breaking or reducing the vacuum for the deposition chamber and other components in the deposition system. Isolation valves are provided at the inlet and outlet of the filter so the filter can be isolated from the source of vacuum and the deposition chamber for removal and replacement of the filter.04-02-2009
20120067282REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly.03-22-2012
20090211526PROCESSING APPARATUS USING SOURCE GAS AND REACTIVE GAS - The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (08-27-2009
20090241834SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a processing chamber configured to accommodate a substrate; and a gas supply unit configured to supply gas into the process chamber. The gas supply unit comprises: an evaporator configured to evaporate a liquid material; a first gas supply pipe configured to supply an evaporated gas from the evaporator into the process chamber; a second gas supply pipe configured to supply an inert gas into the process chamber; and a joint part at which the first gas supply pipe and the second gas supply pipe are joined. The joint part includes a diffusion chamber. A flow rate diaphragm having an inner diameter narrowing toward a direction of the diffusion chamber is installed at the front end of the downstream side of the second gas supply pipe. The evaporated gas from the evaporator is introduced into the diffusion chamber and simultaneously the inert gas is introduced through the flow rate diaphragm installed at the front end of the second gas supply pipe.10-01-2009
20100258052HVPE PRECURSOR SOURCE HARDWARE - Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.10-14-2010
20100212591REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly.08-26-2010
20100147218SYSTEMS AND METHODS FOR FORMING METAL OXIDE LAYERS - A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.06-17-2010
20090107400SUBSTRATE PROCESSING APPARATUS AND A SUBSTRATE PROCESSING METHOD - A gas injection head 04-30-2009
20110239940VAPOR PHASE DEPOSITION SYSTEM - A showerhead for vacuum deposition of several species, said showerhead being divided into several quarters containing each at least one outlet for said species, each of said quarter defining the wall of an underlying compartment containing at least one species, wherein two adjacent compartments contains different species.10-06-2011
20120145078SHOWERHEAD INTEGRATING INTAKE AND EXHAUST - A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process.06-14-2012
20110083606EXHAUST GAS TREATMENT DEVICE FOR A CVD DEVICE, CVD DEVICE, AND EXHAUST GAS TREATMENT METHOD - An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, in particular an LPCVD process. An aftertreatment chamber is provided into which ammonia gas can be metered. In addition, a CVD device and an exhaust gas treatment method are described.04-14-2011
20110083607VAPOR PHASE SELF-ASSEMBLED MONOLAYER COATING APPARATUS - Provided is a vapor phase self-assembled monolayer (SAM) coating apparatus having a small volume and reduced manufacturing costs. The apparatus includes: a chamber for providing space in which at least one substrate is mounted; one or more injection apparatuses, installed at a side of the chamber and in the form of an injector; and one or more supply units for supplying a liquid precursor into the precursor injection apparatus.04-14-2011
20110209662VACUUM PROCESSING CHAMBER MANUFACTURED BY ALUMINUM CASTING - The present invention provides a method for manufacturing a vacuum processing chamber comprising a volume which is defined by a wall and which can be evacuated, said wall being made of aluminum by casting, said wall comprising an outer face and an inner face, said inner face faces the volume, and a method for improving the inner face of the wall of a vacuum processing chamber, wherein the inner face of said wall is smoothened by grinding and is subsequently pearl-blasted or shot-blasted. Vacuum processing chambers obtained by said methods are provided too.09-01-2011
20100012032Apparatus for high-rate chemical vapor deposition - An apparatus for high-rate chemical vapor (CVD) deposition of semiconductor films comprises a reaction chamber for receiving therein a substrate and a film forming gas, a gas inlet for introducing the film forming gas into the reaction chamber, an incidence window in the reaction chamber for transmission of a laser sheet into the reaction chamber, a laser disposed outside the reaction chamber for generating the laser sheet and an antenna disposed outside the reaction chamber for generating a plasma therein. The film forming gas in the chamber is excited and decomposed by the laser sheet, which passes in parallel with the substrate along a plane spaced apart therefrom, and concurrent ionization effected by the antenna, thereby forming a dense semiconductor film on the substrate at high rate.01-21-2010
20100064970APPARATUS AND METHOD OF FORMING SEMICONDUCTOR DEVICES - An apparatus to form semiconductor devices includes an inner tube and an outer tube disposed to surround the inner tube. A plate is disposed at first open end of the inner tube to reduce variation between pressures at a first portion and a second portion inside the inner tube. The sum of areas of through-holes disposed on the plate is 10 to 60 percent of the entire area of the plate. The through-holes may include a first through-hole that is disposed at a central portion of the plate, and second through-holes disposed at an edge portion of the plate. The second through-holes are annularly arranged to surround the first through-hole.03-18-2010
20120240853LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER - Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.09-27-2012
20110067629METHOD AND DEVICE TO VARY GROWTH RATE OF THIN FILMS OVER SEMICONDUCTOR STRUCTURES - Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method includes atomic layer deposition. One method shown provides high step coverage over features such as trenches in trench plate capacitors. Also shown are methods and devices to provide uniform batch reactor layer thicknesses. Also shown are methods for forming alloy layers with high control over composition. Also shown are methods to selectively control growth rate to provide growth only on selected surfaces.03-24-2011
20110073038GAS DISTRIBUTION PLATE AND APPARATUS USING THE SAME - The present invention provides a gas distribution plate for providing at least two gas flowing channel. In one embodiment, the gas distribution plate has a first flowing channel, at least a second flowing channel disposed around the first flowing channel, and a tapered opening communicating with the first and the second flowing channel. In another embodiment, the gas distribution plate has a first flowing channel passing through a first and a second surface of the gas distribution plate, a second flowing channel paralleling to the first surface and a third flowing channel disposed at the second surface and communicating with the second flowing channel. The ends of the first and the third flowing channel have a tapered opening respectively. Besides, the present further provides a gas distribution apparatus for allowing at least two separate gases to be delivered independently into a process chamber while enabling the gases to be mixed completely after entering the processing chamber.03-31-2011
20110247557DEVICE FOR SEALING A CHAMBER INLET OR A CHAMBER OUTLET FOR A FLEXIBLE SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND METHOD FOR ASSEMBLING SUCH A DEVICE - The present disclosure relates to a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, comprising a body having a sealing surface, a substrate opening formed in the body configured to be traversed by the flexible substrate, an elastic tube at least partially facing the sealing surface, wherein the elastic tube has a connecting portion for connecting to a gas supply and being adapted for inflating and deflating during operation. Further, the present disclosure relates to a substrate processing apparatus for processing a flexible substrate, the substrate processing apparatus comprising a first chamber and a second chamber separated from the first chamber, and a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, the device comprising a body having a sealing surface, a substrate opening formed in the body configured to be traversed by the flexible substrate, an elastic tube at least partially facing the sealing surface, wherein the elastic tube has a connecting portion for connecting to a gas supply and being adapted for inflating and deflating during operation, wherein the device selectively opens or closes a fluid connection between the first and the second chamber. Additionally, the present disclosure relates to a method for assembling a device for sealing a chamber inlet or a chamber outlet for a flexible substrate, comprising providing a body having a sealing surface, wherein a substrate opening is formed in the body configured to be traversed by the flexible substrate; inserting an elastic tube into the body, such that the elastic tube is facing at least partially the sealing surface, the elastic tube having a connecting portion and being adapted for inflating and deflating during operation; and connecting the connecting portion of the elastic tube to a gas supply.10-13-2011
20090320754INTEGRATED GAS PANEL APPARATUS - Provided is an integrated gas panel apparatus which has excellent responsiveness, stabilizes gas concentration, and furthermore, can keep a conventional panel shape as it is. A panel body (12-31-2009
20110253046APPARATUS FOR PROVIDING UNIFORM GAS DELIVERY TO A REACTOR - A gas distribution system for a reactor having at least two distinct gas source orifice arrays displaced from one another along an axis defined by a gas flow direction from the gas source orifice arrays towards a work-piece deposition surface such that at least a lower one of the gas source orifice arrays is located between a higher one of the gas source orifice arrays and the work-piece deposition surface. Orifices in the higher one of the gas source orifice arrays may spaced an average of 0.2-0.8 times a distance between the higher one of the gas source orifice arrays and the work-piece deposition surface, while orifices in the lower one of the gas source orifice arrays may be spaced an average of 0.1-0.4 times a distance between the higher one of the gas source orifice array and the work-piece deposition surface.10-20-2011
20120031332Water cooled gas injector - A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O02-09-2012
20100175620CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached.07-15-2010
20110162580HIGH TEMPERATURE ALD INLET MANIFOLD - A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, easily purged reactant lines. Integral passageways and metal seals avoid o-rings and attendant dead zones along flow paths. The manifold includes an internal inert gas channel for purging reactant lines within the block inlet manifold07-07-2011
20100116207REACTION CHAMBER - A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile. 05-13-2010
20100116205PROCESS EQUIPMENT ARCHITECTURE - Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.05-13-2010
20090308315SEMICONDUCTOR PROCESSING APPARATUS WITH IMPROVED THERMAL CHARACTERISTICS AND METHOD FOR PROVIDING THE SAME - A semiconductor processing apparatus is disclosed, comprising a process chamber configured to contain a heated, gaseous atmosphere, the apparatus further comprising a number of mechanical parts, at least one of which parts is provided at least partly with a heat reflective, amorphous SiO12-17-2009
20080216742SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.09-11-2008
20100024727SHOWERHEAD AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME - Provided is a showerhead that can inject a reaction gas into a reaction chamber in a manner such that the injected reaction gas form a spiral vortex flow field. Therefore, the injected reaction gas can be mixed within a shorter distance, and thus the effective deposition radius of a wafer can be increased so that uniform-density deposition can be performed on the entire surface of the wafer using the mixed reaction gas.02-04-2010
20100024726FASTENING APPARATUS - One embodiment of this fastening apparatus comprises a cap with a passage through the length of the cap. This cap is received by the upper panels of a body. The embodiments of this fastening apparatus may have two or more upper panels that form a recess. The body also has a lower region with a passage. The upper panels are flexible and can translate to retain the cap within the recess. A threaded member is disposed in the passage of the body. This cap may be fabricated of graphite in one instance.02-04-2010
20090064932Apparatus for HDP-CVD and method of forming insulating layer using the same - Disclosed herein are an apparatus for high-density plasma chemical vapor deposition and a method of forming an insulating layer using the same. The use of the apparatus and method enables efficient formation of the insulating layer in the gap between semiconductor devices with a high aspect ratio by dispersing a total demand amount of gas in the formation process.03-12-2009
20110041764BATCH PROCESSING PLATFORM FOR ALD AND CVD - A batch processing platform used for ALD or CVD processing is configured for high throughput and minimal footprint. In one embodiment, the processing platform comprises an atmospheric transfer region, at least one batch processing chamber with a buffer chamber and staging platform, and a transfer robot disposed in the transfer region wherein the transfer robot has at least one substrate transfer arm that comprises multiple substrate handling blades. The platform may include two batch processing chambers configured with a service aisle disposed therebetween to provide necessary service access to the transfer robot and the deposition stations. In another embodiment, the processing platform comprises at least one batch processing chamber, a substrate transfer robot that is adapted to transfer substrates between a FOUP and a processing cassette, and a cassette transfer region containing a cassette handler robot. The cassette handler robot may be a linear actuator or a rotary table.02-24-2011
20090095221MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are separately delivered to a plurality of concentric gas injection ports. The precursor gases are injected into mixing zones where the gases are mixed before entering a processing volume containing the substrates.04-16-2009
20120304931Carbon-Based Containment System - A containment system, for instance, for containment of heat and/or chemical gases, is described, for instance, carbon-based containment systems that can include an insulation segment, a shield segment, and/or a divider segment, wherein each can be a plurality of panels, such as wall panels, that form walls.12-06-2012
20090133627SUBSTRATE PROCESSING APPARATUS AND METHOD, AND GAS NOZZLE FOR IMPROVING PURGE EFFICIENCY - A substrate processing apparatus capable of efficiently purging not only a process space but also the inside of a processing gas feed nozzle when a multi element compound film is formed on a substrate by laminating a molecular layer thereon, wherein an exhaust line is connected to one end of the processing gas feed nozzle jetting the processing gas in a laminar flow into the process space along the surface of the treated substrate, and the processing gas or purge gas is fed from the other end thereof.05-28-2009
20080271675Method of forming thin film solar cells - A single chamber CVD manufacturing process enables thin film p-i-n solar cells exhibiting collection efficiencies in the range of 9% to 12%, and higher. These collection efficiencies are achieved by: Changing the overall chemical and structural composition of the p-doped layer; Using techniques to remove residual reactants after deposition of the p-doped layer; optionally, applying a buffer layer of a hydrogen-rich amorphous silicon between the p-doped layer and a subsequently deposited intrinsic layer; and, changing the silicon crystalline composition during deposition of an i-doped layer or an n-doped layer. The single chamber process provides a cost of manufacture/solar cell output in $/Watt that is competitive.11-06-2008
20110155055CVD DEVICE - A CVD device includes a reaction chamber, a support device, a gas input assembly and a gas output device. The support device is positioned in the reaction chamber. The gas input assembly and a gas output assembly are connected to the reaction chamber respectively. The gas input assembly includes a main body positioned in the reaction chamber and a plurality of gas jets uniformly positioned on the main body, introducing mixed gas to the reaction chamber uniformly.06-30-2011
20120042828SLIT VALVE FOR VACUUM CHAMBER MODULE - A slit valve assembly is configured for attachment to a vacuum chamber module to seal a slot opening in a wall of the module in a closed position and to provide access through the slot opening in an open position. The valve assembly includes a rotatable shaft driven by a rotary actuator between an open rotational position and a closed rotational position. An elongated seal plate seals against the module wall over the slot opening in the closed rotational position of the shaft. At least one arm member connects the seal plate with the shaft. The arm member rotates with the shaft and is pivotally attached to the seal plate. The seal plate is biased to an articulated position relative to the arm member.02-23-2012
20090159004VERTICAL CHEMICAL VAPOR DEPOSITION APPARATUS HAVING NOZZLE FOR SPRAYING REACTION GAS TOWARD WAFERS - A vertical chemical vapor deposition apparatus includes a reaction chamber; and a reaction gas supply nozzle for supplying a reaction gas to the reaction chamber. The reaction gas supply nozzle is positioned adjacent to a side wall surface of the reaction chamber. An expanded surface, which protrudes toward the outside of the reaction chamber, is formed in a part of the side wall surface so that the expanded surface is distant from the reaction gas supply nozzle, where the part is adjacent to the reaction gas supply nozzle. The reaction gas supply nozzle sprays the reaction gas toward a center part of the reaction chamber.06-25-2009
20100275842Evaporating apparatus - Provided is an evaporating apparatus that deposits a deposition material onto a treatment object. The evaporating apparatus includes a base, a deposition source, and first and second correction units. The deposition source deposits the deposition material onto the treatment object. The base is disposed separately from the treatment object. The deposition source is placed on a surface of the base. The first and second correction units located between the deposition source and the treatment object. The first and second correction units are disposed on outer regions of the deposition source and face each other. Each of the first and second correction units rotates to control the thickness of a layer formed by the deposition material deposited on the treatment object.11-04-2010
20100275844DEPOSITION APPARATUS - In a deposition apparatus according to an embodiment of the present invention, a buffer unit is provided between a vaporizer and a reactor of a vaporization supply system to temporarily store source gas, thus, before and when the source gas is supplied to the reactor, the variations of the internal pressure of the vaporizer can be reduced to supply the constant amount of source gas of to reaction spaces, thereby depositing a thin film having a uniform thin-film thickness.11-04-2010
20120312231APPARATUS FOR THIN-FILM DEPOSITION - An apparatus 12-13-2012
20110088621Organic Vapor Jet Deposition Using an Exhaust - Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source.04-21-2011
20090000550MANIFOLD ASSEMBLY - Embodiments of a manifold assembly are provided herein. In some embodiments, a manifold assembly includes a first manifold having a first inlet, for coupling to a high temperature fluid source, and a first outlet; a second manifold having a second inlet and a second outlet; and a connector portion coupling the first outlet of the first manifold to the second inlet of the second manifold, the connector portion includes a polymer block; and a thermal isolator disposed between the polymer block and the first manifold.01-01-2009
20080302302Substrate Processing System - Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.12-11-2008
20100186668ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS - The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.07-29-2010
20120079984GAS MIXER AND MANIFOLD ASSEMBLY FOR ALD REACTOR - A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.04-05-2012
20100229793SHOWERHEAD FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.09-16-2010
20130008381TRAP APPARATUS AND SUBSTRATE PROCESSING APPARATUS - A trap apparatus provided between a chamber and an evacuating unit includes an inlet port and an exhausting port to be respectively connected to the chamber and the evacuating unit; a cooling trap portion provided with a first space for cooling gas in the first space; and a bypass portion provided with a first channel capable of communicating between the inlet port and the first space, a second channel capable of communicating between the first space and the exhausting port, and a second space capable of communicating between the inlet port and the exhausting port, the bypass portion being relatively movable with respect to the cooling trap portion to selectively form a first path from the inlet port to the exhausting port via the first channel, the first space and the second channel, and a second path from the inlet port to the exhausting port via the second space.01-10-2013
20130014698MODULAR GAS INJECTION DEVICEAANM Kools; Jacques Constant StefanAACI Simiane CollongueAACO FRAAGP Kools; Jacques Constant Stefan Simiane Collongue FR - Embodiments of the device relate to a modular injector (01-17-2013
20080236487Semiconductor Manufacturing Apparatus And Semiconductor Device Manufacturing Method - Adverse effects when a carrier is open, such as particles adhesion to the substrate or natural oxidation film deposits on the substrate, as well as a rise in oxygen concentration and contamination of the substrate transfer chamber are prevented. Semiconductor manufacturing apparatus includes a carrier (10-02-2008
20110232568HYBRID GAS INJECTOR - A gas injector for use in injecting process gas into a space in a vertical furnace between a tower supporting multiple wafers and a tubular liner includes a tubular straw having an open distal end and a first bore extending along a first axis and composed of a first single material selected from the group consisting of silicon, quartz, and silicon carbide, and a connector detachably connected to the straw section, composed of a second material other than the first material and including a supply tube having a second bore extending along a second axis perpendicular to the first axis and in fluid communication with the first bore and having a distal end connectable to a gas supply line.09-29-2011
20110303147ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.12-15-2011
20110265719REACTION CHAMBER - A reaction chamber for an atomic layer deposition reactor is provided. The reaction chamber includes outer walls for providing a reaction space inside the reaction chamber. At least one of the outer walls of the reaction chamber is made from a flexible thinsheet.11-03-2011
20100275843 HVPE REACTOR ARRANGEMENT - An HVPE reactor arrangement comprises a reaction chamber (11-04-2010
20080210162Substrate Processing Apparatus and Substrate Processing System - In a substrate processing apparatus in which substrates are processed by an operator who prepares recipes on an operating screen displayed on a display means, and a processing means that performs the prepared recipes, a configuration is adopted so that a plurality of operating items relating to an adjustment operation involving the aforementioned substrate processing apparatus is displayed in order, and the recipes used in the aforementioned respective operating items during the aforementioned adjustment operations are displayed on the aforementioned operating screen.09-04-2008
20080202417Self-contained process modules for vacuum processing tool - A substrate processing apparatus is described. The apparatus includes a substrate load lock chamber. A substrate transfer chamber is vacuum coupled to the substrate load lock chamber. A plurality of process chamber modules are vacuum coupled to the substrate transfer chamber. Each of the process chamber modules includes a process chamber coupled to a dedicated support system so that each process chamber module can be disconnected from the substrate transfer chamber without disrupting any of the other process chamber modules. The substrate transfer chamber includes one or more robotic arms for transferring semiconductor substrates between the substrate load lock chamber and the plurality of process chamber modules.08-28-2008
20080202416High temperature ALD inlet manifold - A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, easily purged reactant lines. Integral passageways and metal seals avoid o-rings and attendant dead zones along flow paths. The manifold includes an internal inert gas channel for purging reactant lines within the block inlet manifold08-28-2008
20110220023NITROGEN GAS INJECTION APPARATUS - The present invention relates to a nitrogen gas injection apparatus for semiconductor fabrication equipment or LCD fabrication equipment, which can be simply manufactured and which thus reduces manufacturing costs, and which enables a nitrogen gas injection direction to correspond to the flow direction of reaction by-products, to thereby inject nitrogen gas in an effective manner without disturbing the flow of reaction by-products. The nitrogen gas injection apparatus comprises: a pair of flanged pipes having flanges; a ring-shaped injection nozzle coupled along the inner wall of one of the flanged pipes coupled together, to supply nitrogen gas into the flanged pipes; and a nitrogen supply line connected to the injection nozzle to supply nitrogen gas. The interior of the injection nozzle has a hole to enable the nitrogen gas supplied in a circumferential direction to flow, and a plurality of injection holes communicating with the hole to inject the supplied nitrogen gas into the flanged pipes. The injection holes are formed at the position protruding from the inner surface of one of the flanged pipes to inject nitrogen gas in the flow direction of reaction by-products.09-15-2011
20090205570Gas supply unit and chemical vapor deposition apparatus - A gas supply unit and a chemical vapor deposition apparatus are disclosed. A gas supply unit for supplying a reactive gas for a chemical vapor deposition process can include a hot wire part configured to pyrolyze the reactive gas, an ejection part configured to eject the reactive gas towards the hot wire part, and a suction part disposed adjacent to the hot wire part and configured to suck in and exhaust a by-product of the reactive gas. With certain embodiments of the invention, the by-products resulting from the chemical vapor deposition process may be exhausted immediately, so that a thin film may be formed over an object with higher quality, and the cleaning cycles for the inside of the chamber may be extended, for greater productivity.08-20-2009
20130118405FLUID COOLED SHOWERHEAD WITH POST INJECTION MIXING - A showerhead that injects two process gases into the processing chamber via separate sets of holes. The showerhead is constructed of upper plate and lower plate. Upper plate has a first set of holes. The lower plate has two sets of holes: one set is aligned with the holes in the upper plate, while the second set has no corresponding holes in the upper plate. Both sets of holes in the lower plate are made to have two different diameters: a larger diameter extending from the top surface of the lower plate, while a smaller diameter extends from the bottom surface and meets with the larger diameter. A set of pipes are inserted through the holes in the upper plate and the corresponding holes in the lower plate, and are sealingly brazed to both plates. Cooling channels may be provided in the lower plate.05-16-2013
20100307415SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF - A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.12-09-2010
20120272900LATERAL FLOW ATOMIC LAYER DEPOSITION DEVICE - A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.11-01-2012
20130152857Substrate Processing Fluid Delivery System and Method - Embodiments provided herein describe substrate processing fluid delivery systems and methods. The substrate processing fluid delivery systems include a flow regulator. A fluid conduit assembly is coupled to the flow regulator and a processing chamber of a substrate processing apparatus. A plurality of processing fluid containers is coupled to the fluid conduit assembly. A plurality of valves is coupled to the fluid conduit assembly. The plurality of valves are configurable to selectively place each of the plurality of processing fluid containers in fluid communication with only the flow regulator or the processing chamber of the substrate processing apparatus through the fluid conduit assembly.06-20-2013
20130180451SUBSTRATE TREATMENT SYSTEM - The present invention addresses the problem of providing a substrate treatment system for making it possible to keep the inside of a chamber at a stable pressure, even when a variance occurs in the supply flow rate of an inert gas, and for making it possible to increase the supply flow rate of the inert gas and reduce the duration of time needed to fill with the inert gas during an initial operation. The present invention adopts a configuration provided with: a substrate treatment section for carrying out a predetermined treatment on the substrate; a chamber for accommodating the substrate treatment section in a sealed state; a gas supply unit for supplying an inert gas to inside the chamber; and a gas exhaust unit for discharging the gas inside the chamber; the supply flow rate of the inert gas of the gas supply unit and the exhaust flow rate of the gas exhaust unit being adjusted so that the pressure inside the chamber reaches a chamber setting pressure higher than the pressure outside the chamber.07-18-2013
20110290182METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS - It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.12-01-2011
20120000422APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION - Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.01-05-2012
20130199446APPARATUS - Disclosed is an apparatus for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes at least one nozzle head having two or more two or more precursor zones for subjecting the surface of the substrate to at least the first and second precursors and a moving mechanism for moving the nozzle head in oscillating movement between a first end position and a second end position. The moving mechanism is arranged to store at least part of the kinetic energy of the nozzle head released in oscillating movement of the nozzle head.08-08-2013
20130206066THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus includes a reaction chamber, a main disk installed in the reaction chamber, and a gas discharging unit disposed outside the main disk. The gas discharging unit recollects a gas in the reaction chamber, and includes: a base member that includes an outer sidewall, an inner sidewall, and a lower wall that connects the outer and inner sidewalls, and is ring-shaped with an open upper portion. At least one through hole is formed in the lower wall. A discharge sleeve is configured to be inserted into the through hole, wherein a gas outlet is formed in the discharge sleeve. An upper cover that is ring-shaped covers the open upper portion of the base member. A plurality of gas inlets are formed in the upper cover.08-15-2013

Patent applications in class GAS OR VAPOR DEPOSITION

Patent applications in all subclasses GAS OR VAPOR DEPOSITION