Class / Patent application number | Description | Number of patent applications / Date published |
118704000 | Sequential energization of plural operations | 23 |
20080264337 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber. | 10-30-2008 |
20110162579 | POWDER FEEDING METHOD, POWDER FEEDING APPARATUS AND ELECTROSTATICAL POWDER SPRAY COATING APPARATUS - A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve. | 07-07-2011 |
20110168093 | METHODS AND APPARATUS FOR INCORPORATING NITROGEN IN OXIDE FILMS - In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided. | 07-14-2011 |
20110185970 | SEMICONDUCTOR PROCESSING - Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process. | 08-04-2011 |
20110197813 | FILM FORMING APPARATUS - The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO | 08-18-2011 |
20110247553 | COATING DEVICE - A coating device includes two workspaces, two first slide rails, two second slide rails, two transporting loops, a number of rotating platforms, and a number of loading poles. The first slide rails are respectively fixed on the bottoms of the workspaces. The second slide rails are respectively fixed on the tops of the workspaces. The transporting loops are movably positioned on the first slide rails respectively. The rotating platforms are rotatably positioned on the transporting loops and capable of being driven by the transporting loops to rotate and slide along the first slide rails. The loading poles are positioned between the rotating platforms and the second slide rails, and are used for holding substrates. The loading poles are capable of being transported from one workspace to another workspace. | 10-13-2011 |
20120199065 | Multi-Module System for Processing Thin Film Photovoltaic Devices - A system for in-line substrate processing includes a horizontal rail structure at a first height. A substrate transfer module next to the rail structure receives substrates ready for processing and delivers substrates after processing. Process modules disposed along the rail structure enable process operations on the substrates. A substrate loader moves along the rail structure and transfers substrates to and from the substrate transfer module and to and from the process modules. A controller manages operation of the system. | 08-09-2012 |
20140216337 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 08-07-2014 |
20150013603 | SUBSTRATE PROCESSING APPARATUS - Each chemical processing section includes a chemical liquid bottle, a buffer tank, a pump, a filter, a discharge valve and a discharge nozzle. A chemical liquid stored in the chemical liquid bottle is led to the discharge nozzle and is discharged from the discharge nozzle to a substrate. A cleaning processing section includes a solvent bottle, a cleaning liquid bottle, the buffer tank and the pump. A solvent stored in the solvent bottle, a cleaning liquid stored in the cleaning liquid bottle and a gas supplied from a gas supply source are selectively led to the discharge nozzle in each chemical liquid processing section. | 01-15-2015 |
20150059645 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprising a substrate holding rotating mechanism, a process liquid supply mechanism having a nozzle for dispensing a process liquid toward a principal face of the substrate, a processing liquid reservoir for holding sufficient process liquid to form a liquid film covering the whole principal face of the substrate, a liquid film forming unit for forming the liquid film by supplying the process liquid onto the principal face of the substrate in a single burst, and a control unit for controlling the liquid film forming unit and the process liquid supply mechanism such that the process liquid is dispensed from the process liquid nozzle toward the principal face of the substrate after formation of the liquid film covering the whole area of the principal face of the substrate by the liquid film forming unit. | 03-05-2015 |
20150101531 | POWDER COATING SYSTEM - A powder coating system which is provided with a rotating stage which makes a metal cylindrical member rotate while holding its internal circumferential surface, a first booth which covers part of the metal cylindrical member which is held by the rotating stage, and a second booth which holds the first booth. A powder coating introduction nozzle which is provided with a filling port of powder coating and a plurality of powder coating spray ports is provided so that a filling port is positioned at the outside of the second booth and so that the plurality of spray ports can be changed in position in the first booth to face surface parts of the metal cylindrical member. The sprayed powder coating is collected inside the second booth by a flow of air from a blow device and is removed by being sucked up by a powder collector. | 04-16-2015 |
20150101532 | APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM - Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer. | 04-16-2015 |
20150101533 | SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device capable of forming a nitride layer having high resistance to hydrogen fluoride at low temperatures. The method includes forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate, supplying a plasma-excited hydrogen-containing gas to the substrate, supplying a plasma-excited or thermally excited nitriding gas to the substrate, and supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate. | 04-16-2015 |
20150315702 | Substrate Processing Apparatus - A substrate processing apparatus includes a process container, a process gas supply system, an exhaust system, and a control unit. The process container has inner and outer reaction tubes and a communication section connecting the insides of the reaction tubes. The inner reaction tube has a flat top inner surface at an upper end that covers at least part of a top surface of a substrate support. The process gas supply system supplies a process gas into the process container, and the exhaust system exhausts the process gas from the process container via the communication section and a space between the reaction tubes. The control unit controls a repeated cycle that includes: supplying the process gas into the process container; confining the process gas in the process container; and exhausting the process gas from the process container via the communication section and the space between the reaction tubes. | 11-05-2015 |
20150354062 | THIN FILM FORMING METHOD AND THIN FILM FORMING APPARTUS - A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times. | 12-10-2015 |
20160010210 | SUBSTRATE PROCESSING APPARATUS | 01-14-2016 |
20160024650 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate. | 01-28-2016 |
20160024654 | Film Forming Apparatus - A film forming apparatus includes a first and second source gas suppliers configured to limitedly supply a source gas only to a first and second substrate areas, respectively, a reaction gas supplier configured to supply a reaction gas to the first substrate area and the second substrate area, a purge gas supplier configured to supply a purge gas for preventing the source gas supplied to one of the first and second substrate areas from being supplied to the other substrate area, a division-purpose substrate held between the first and second substrate areas in a substrate holding part, and a control part configured to output a control signal such that a first cycle including supplying the source gas and the reaction gas to the first substrate area and a second cycle including supplying the source gas and the reaction gas to the second substrate area are each performed plural times. | 01-28-2016 |
20160038965 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus. substrate processing apparatus includes a moving mechanism that moves a wafer in a horizontal direction, coating sections that eject the coating liquid to the wafer, and dry sections that dries the coating liquid, and a controller that controls the drying sections, the coating sections, and the moving mechanism. In each coating section, the wafer is moved in the horizontal direction while causing the coating liquid to be in contact with the wafer so that the coating liquid is coated on the entire surface. | 02-11-2016 |
20160083843 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a process chamber configured to process a substrate; a shower head installed at an upstream side of the process chamber; a gas supply pipe connected to the shower head; a first exhaust pipe connected to a downstream side of the process chamber; a second exhaust pipe connected to a second wall surface, which is different from a first wall surface adjacent to the process chamber, in wall surfaces forming the shower head; a pressure detecting part installed in the second exhaust pipe; and a control part configured to control each of the process chamber, the shower head, the gas supply pipe, the first exhaust pipe, the second exhaust pipe, and the pressure detecting part. | 03-24-2016 |
20160108519 | METHOD AND APPARATUS OF FORMING SILICON NITRIDE FILM - Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed. | 04-21-2016 |
20160121599 | MACHINE FOR PRODUCING THREE-DIMENSIONAL SCREEN-PRINTED ARTICLES - The invention relates to a machine for producing three-dimensional screen-printed articles, comprising a press bed with a printing screen, by means of which at least one printing object can be printed multiple times, wherein after each completed printing, the height can be increased by the application thickness of the previous printing. | 05-05-2016 |
20160177446 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium | 06-23-2016 |