Class / Patent application number | Description | Number of patent applications / Date published |
117103000 | Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser) | 14 |
20100139554 | METHODS AND APPARATUS FOR MAKING GALLIUM NITRIDE AND GALLIUM ALUMINUM NITRIDE THIN FILMS - Methods and apparatus for forming gallium nitride and gallium aluminum nitride films, such as gallium nitride and gallium aluminum nitride epitaxial layers on a substrate are provided, including providing a substrate; and exposing the substrate to gallium vapor and an NH | 06-10-2010 |
20100175614 | THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL - A configuration for producing a bulk SiC crystal includes a growing crucible having an electrically conductive crucible wall, an inductive heating device disposed outside the growing crucible for inductively coupling an electric current, which heats the growing crucible, into the crucible wall, and an insulation layer disposed between the crucible wall and the inductive heating device. The insulation layer is formed of a graphite insulation material having short carbon fibers with a fiber length in a range of between 1 mm and 10 mm and a fiber diameter in a range of between 0.1 mm and 1 mm. A method for producing a bulk SiC crystal is also provided. | 07-15-2010 |
20100294196 | Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate - The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost. | 11-25-2010 |
20110005454 | Plasma Reactor, and Method for the Production of Monocrystalline Diamond Layers - A plasma reactor and a method for production on wafers over a large area of monocrystalline diamond layers. The plasma reactor includes at least two flat electrodes having surfaces orientated towards each other, the electrodes being delimited respectively by an edge; a plasma region producing a plasma between the surfaces of the electrodes with an ion saturation current density of equal to or greater than 0.001 A/cm2, wherein a gas is introduced into the plasma region; and a device supplying microwaves having at least one frequency, the microwaves radiating into the plasma region and introducing a power into the plasma region contributing to the plasma production. The ion saturation current density of equal to or greater than 0.001 A/cm2 is maintained by controlling at least one of (a) a spacing between the electrodes, (b) the power of the microwaves, and (c) the frequency of the microwaves. | 01-13-2011 |
20110174213 | Vapor Phase Epitaxy System - A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode, thereby activating first precursor gas molecules. | 07-21-2011 |
20120210932 | LOW-TEMPERATURE SELECTIVE EPITAXIAL GROWTH OF SILICON FOR DEVICE INTEGRATION - An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000. | 08-23-2012 |
20130032085 | PLASMA ASSISTED HVPE CHAMBER DESIGN - Embodiments of the invention disclosed herein generally relate to a hydride vapor phase epitaxy (HVPE) deposition chamber that utilizes a plasma generation apparatus to form an activated precursor gas that is used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, the plasma generation apparatus is used to create a desirable group-III metal halide precursor gas that can enhance the deposition reaction kinetics, and thus reduce the processing time and improve the film quality of a formed group-III metal nitride layer. In addition, the chamber may be equipped with a separate nitrogen containing precursor activated species generator to enhance the activity of the delivered nitrogen precursor gases. | 02-07-2013 |
20130087093 | APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA - Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region. | 04-11-2013 |
20130160702 | METHODS OF GROWING III-V SEMICONDUCTOR MATERIALS, AND RELATED SYSTEMS - Methods and systems are increase the number of Group V ions formed from Group V precursors in methods of forming III-V semiconductor materials to enhance the growth rate of the III-V semiconductor material. In some embodiments, a Group V precursor is heated and at least partially decomposed in a heated diffuser to form Group V ions. In additional embodiments, microwave energy is applied to a Group V precursor and the Group V precursor is at least partially decomposed to form Group V ions. Group III ions are also formed, and the Group III and Group V ions are used to form a III-V semiconductor material within a chamber. | 06-27-2013 |
20130220214 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 08-29-2013 |
20140041574 | DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS - Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode ( | 02-13-2014 |
20140069327 | PROCESS FOR DEVELOPING A COMPOSITE COATING OF DIAMOND LIKE CARBON AND GRAPHITE ON SILICON CARBIDE GRAIN BY INDIRECT ARC PLASMA HEATING DISSOCIATION - The present invention relates to a process for in situ growth of carbonaceous composite coating of diamond like carbon (DLC) and graphite on silicon carbide (SiC) grains by carrying out thermal dissociation of SiC by an indirect arc plasma heating and the said process comprising the steps of: (i) providing SiC grains in a graphite crucible; (ii) passing inert gas in the arc zone situated below the graphite crucible; (iii) passing a inert gas inside the graphite crucible; (iv) heating the graphite crucible by arc plasma for a period in the range of 15 to 30 minutes; (v) continuing the inert gas flow in arc zone and in graphite crucible for 50 to 70 minutes; (vi) cooling the reactor to obtain a carbonaceous composite coating having diamond like carbon (DLC) and graphite on silicon carbide (SiC) grains. | 03-13-2014 |
20150292110 | METHOD FOR PREPARING GRAPHENE - The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBr | 10-15-2015 |
20150299897 | METHOD FOR FORMING AN EPITAXIAL SILICON LAYER - The invention relates to a method for forming a crystallised silicon layer having a crystallite size higher than or equal to 100 μm, by the epitaxial growth in a vapour phase, on the surface of at least one silicon substrate, including at least the steps: (i) providing a silicon substrate having a particle size higher than or equal to 100 μm and including a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming the silicon layer on the surface of the substrate heated to a temperature of between 1000 and 1300° C., by decomposition of at least one silicon precursor by unit of an inductive plasma torch, the surface of the substrate for supporting the silicon layer being positioned close to the outlet of the plasma torch in step (ii). | 10-22-2015 |
Patent applications in class Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)