Class / Patent application number | Description | Number of patent applications / Date published |
117094000 | With pretreatment or preparation of a base (e.g., annealing) | 66 |
20080223287 | Plasma enhanced ALD process for copper alloy seed layers - A method of forming a copper alloy seed layer comprises providing a substrate in a reactor, performing a first ALD process to fabricate an alloy metal layer on the substrate, wherein the first ALD process uses an alloy metal precursor selected from a group of specific alloy metal precursors, performing a second ALD process to fabricate a copper metal layer on the alloy metal layer, wherein the second ALD process uses a copper metal precursor selected from a group of specific copper metal precursors, and annealing the alloy metal layer and the copper metal layer to form a graded Cu-alloy layer. | 09-18-2008 |
20090235862 | METHOD OF MANUFACTURING ZINC OXIDE NANOWIRES - A method of manufacturing zinc oxide nanowires. A metal seed layer is formed on a substrate. The metal seed layer is thermally oxidized to form metal oxide crystals. Zinc oxide nanowires are grown on the metal oxide crystals serving as seeds for growth. The zinc oxide nanowires are aligned in one direction with respect to the surface of the substrate. | 09-24-2009 |
20100012021 | EPITAXIAL GROWTH AND CLONING OF A PRECURSOR CHIRAL NANOTUBE - A precursor chiral nanotube with a specified chirality is grown using an epitaxial process and then cloned. A substrate is provided of crystal material having sheet lattice properties complementary to the lattice properties of the selected material for the nanotube. A cylindrical surface(s) having a diameter of 1 to 100 nanometers are formed as a void in the substrate or as crystal material projecting from the substrate with an orientation with respect to the axes of the crystal substrate corresponding to the selected chirality. A monocrystalline film of the selected material is epitaxially grown on the cylindrical surface that takes on the sheet lattice properties and orientation of the crystal substrate to form a precursor chiral nanotube. A catalytic particle is placed on the precursor chiral nanotube and atoms of the selected material are dissolved into the catalytic particle to clone a chiral nanotube from the precursor chiral nanotube. | 01-21-2010 |
20100263587 | HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 10-21-2010 |
20110120366 | SUSCEPTOR, FILM FORMING APPARATUS AND METHOD - An outer peripheral portion of the silicon wafer is supported by the first susceptor part. The second susceptor part is a close fit in the opening of the first susceptor part to support a portion other than the outer peripheral portion of the silicon wafer. The second susceptor part comes into contact with the outer peripheral portion of the first susceptor part and is disposed in such a manner that a clearance having a predetermined size is formed between the first susceptor part and the second susceptor part and between the opening and the outer peripheral portion thereof. A gas exiting the clearance, which was expanded by heating, is expelled into the chamber via through holes. | 05-26-2011 |
20110179993 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased. | 07-28-2011 |
20110239931 | EPITAXIAL SILICON WAFER AND FABRICATION METHOD THEREOF - An epitaxial silicon wafer is provided in which an epitaxial layer is grown on a silicon wafer having a plane inclined from a {110} plane of a silicon single crystal as a main surface. In the silicon wafer for growing the epitaxial layer thereon, an inclination angle azimuth of the {110} plane is in the range of 0 to 45 degrees as measured from a <100> orientation parallel to the {110} plane toward a <100> direction. With such an arrangement, LPDs of 100 nm or less can be measured from a {110} wafer that has a carrier mobility (including the hole and electron mobilities) higher than that of a {100} wafer. Also, surface roughness degradation in the {110} wafer can be suppressed. Also, the surface state of the {110} wafer can be measured. Further, a quality evaluation can be performed on the {110} wafer. | 10-06-2011 |
20120000415 | Large Area Nitride Crystal and Method for Making It - Techniques for processing materials in supercritical fluids include processing in a capsule disposed within a high-pressure apparatus enclosure. The invention is useful for growing crystals of: GaN; AN; InN; and their alloys, namely: InGaN; AlGaN; and AlInGaN; for manufacture of bulk or patterned substrates, which in turn can be used to make optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors. | 01-05-2012 |
20120031324 | METHOD FOR GROWING GROUP III NITRIDE CRYSTAL - The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates | 02-09-2012 |
20120304918 | beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD - A method of growing a p-type thin film of β-Ga | 12-06-2012 |
20140230723 | METHOD FOR PRODUCING B-Ga203 SUBSTRATE AND METHOD FOR PRODUCING CRYSTAL LAMINATE STRUCTURE - Provided are: a method for producing a β-Ga | 08-21-2014 |
20140290565 | METHOD OF MANUFACTURING GRAPHENE USING METAL CATALYST - The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene. | 10-02-2014 |
20140318441 | NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTALGROWTH METHOD - A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH | 10-30-2014 |
20150096488 | PREFERRED VOLUMETRIC ENLARGEMENT OF III-NITRIDE CRYSTALS - The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. The systems and methods further include using thermal gradients and/or chemical driving agents to enhance or limit crystal growth in one or more planes. | 04-09-2015 |
117095000 | Coating (e.g., masking, implanting) | 31 |
20100199910 | METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a ( | 08-12-2010 |
20100206217 | METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND - The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method. | 08-19-2010 |
20100288190 | Growth Method of Non-Polarized-Plane InN - A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O | 11-18-2010 |
20100288191 | METHOD OF GROWING GALLIUM NITRIDE CRYSTAL AND METHOD OF MANUFACTURING GALLIUM NITRIDE SUBSTRATE - In a method of growing a gallium nitride crystal, the following steps are performed. First, a base substrate is prepared. Then, a first gallium nitride layer is grown on the base substrate. Thereafter, a second gallium nitride layer less brittle than the first gallium nitride layer is grown. | 11-18-2010 |
20110168082 | MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - A manufacturing method of a group III nitride semiconductor crystal is provided, comprising: the step of preparing a seed crystal; and the convex surface growing step of growing the group III nitride semiconductor crystal, with a growth surface of the group III nitride semiconductor crystal constituted only by a plurality of surfaces not vertical to a growth direction, and the growth surface constituted of the plurality of surfaces formed into a convex shape as a whole. | 07-14-2011 |
20110315074 | SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE - An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate. | 12-29-2011 |
20120012048 | FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL - The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate. | 01-19-2012 |
20120037068 | COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY - Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate. | 02-16-2012 |
20120090535 | Method of Fabricating Semiconductor Device - A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface. | 04-19-2012 |
20120125256 | APPARATUS AND METHOD FOR REPEATEDLY FABRICATING THIN FILM SEMICONDUCTOR SUBSTRATES USING A TEMPLATE - Mechanisms are disclosed by which a semiconductor wafer, silicon in some embodiments, is repeatedly used to serve as a template and carrier for fabricating high efficiency capable thin semiconductor solar cells substrates. Mechanisms that enable such repeated use of these templates at consistent quality and with high yield are disclosed. | 05-24-2012 |
20120167819 | METHOD FOR RECONSTRUCTING A SEMICONDUCTOR TEMPLATE - The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a substrate or template used in the manufacturing process of silicon solar cells. Further, methods are disclosed which provide for the conversion of a low quality starting surface into an improved quality starting surface of a silicon wafer. | 07-05-2012 |
20120325139 | EPTAXIAL SUBSTRATE, METHOD FOR MAKING THE SAME AND METHOD FOR GROWING EPITAXIAL LAYER USING THE SAME - An epitaxial substrate is provided, the epitaxial substrate is used to grow epitaxial layer. The epitaxial substrate includes a base having a number of grooves to form a patterned epitaxial growth surface. The patterned epitaxial growth surface is referred as an epitaxial growth surface. A carbon nanotube layer covers on the epitaxial growth surface, and the carbon nanotube layer corresponding to the grooves is suspended on the epitaxial substrate. | 12-27-2012 |
20130025531 | METHODS FOR MODIFYING CRYSTALLOGRAPHIC SYMMETRY ON THE SURFACE OF A SILICON WAFER - A method for modifying crystallographic symmetry on the surface of a silicon (001) wafer, the method comprising providing a silicon substrate wafer having a symmetry element, forming a symmetry breaking layer on the substrate, and growing at least one transformation layer having a 3-fold or 6-fold rotational symmetry axis substantially perpendicular to the wafer surface on the formed symmetry breaking layer. | 01-31-2013 |
20130160701 | BARRIER GUIDED GROWTH OF MICROSTRUCTURED AND NANOSTRUCTURED GRAPHENE AND GRAPHITE - Methods for growing microstructured and nanostructured graphene by growing the microstructured and nanostructured graphene from the bottom-up directly in the desired pattern are provided. The graphene structures can be grown via chemical vapor deposition (CVD) on substrates that are partially covered by a patterned graphene growth barrier which guides the growth of the graphene. | 06-27-2013 |
20130239880 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 09-19-2013 |
20130276696 | PRODUCTION METHOD FOR FLAT SUBSTRATE WITH LOW DEFECT DENSITY - The present invention discloses a production method for a flat substrate with low defect density. The method includes steps of: providing a substrate, performing selective growth of nanowires, performing lateral epitaxial growth of the nanowires, performing lateral coalescence of widened nanowires, performing high temperature annealing, and performing LED structure growth. The production method of the present invention generates vertical and lateral growth of the nanowires by choosing different concentrations of additives to produce a flat film, and generate a high efficiency LED semiconductor structure after annealing the flat film. | 10-24-2013 |
20140116328 | METHOD AND SYSTEM FOR CARBON DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES - A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer. | 05-01-2014 |
20140116329 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al | 05-01-2014 |
20140137795 | METHOD FOR GROWING EPITAXIAL DIAMOND - A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained. | 05-22-2014 |
20140209014 | METHOD OF GROWING DIAMOND THIN FILM - The present invention is directed to a method of growing thin film diamond. Since there are micro-grooves formed between internal grains of the heterogeneous substrate during lateral epitaxy growth, diamond seeds are allowed to be embedded in the micro-grooves; surface damage caused by scratching method or seeding method also can be prevented. As a result, a continuous diamond thin film with uniform thickness and high quality can be obtained. | 07-31-2014 |
20140245946 | Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces - Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate. | 09-04-2014 |
20140251204 | NOVEL GROWTH METHODS FOR CONTROLLED LARGE-AREA FABRICATION OF HIGH-QUALITY GRAPHENE ANALOGS - In some embodiments, the present disclosure pertains to methods of growing chalcogen-linked metallic films on a surface in a chamber. In some embodiments, the method comprises placing a metal source and a chalcogen source in the chamber, and gradually heating the chamber, where the heating leads to the chemical vapor deposition of the chalcogen source and the metal source onto the surface, and facilitates the growth of the chalcogen-linked metallic film from the chalcogen source and the metal source on the surface. In some embodiments, the chalcogen source comprises sulfur, and the metal source comprises molybdenum trioxide. In some embodiments, the growth of the chalcogen-linked metallic film occurs by formation of nucleation sites on the surface, where the nucleation sites merge to form the chalcogen-linked metallic film. In some embodiments, the formed chalcogen-linked metallic film includes MoS | 09-11-2014 |
20140331918 | Method for Growing an AIN Monocrystal and Device for Implementing Same - The invention relates to the technology for producing three-dimensional monocrystals and can preferably be used in optoelectronics for manufacturing substrates for various optoelectronic devices, including light-emitting diodes that emit light in the ultraviolet region. The method for growing an AlN monocrystal by gas-phase epitaxy from a mixture containing a source of Al and NH | 11-13-2014 |
20140338588 | Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition - Methods for forming an epilayer on a surface of a substrate are generally provided. For example, a substrate can be positioned within a hot wall CVD chamber (e.g., onto a susceptor within the CVD chamber). At least two source gases can then be introduced into the hot wall CVD chamber such that, upon decomposition, fluorine atoms, carbon atoms, and silicon atoms are present within the CVD chamber. The epilayer comprising SiC can then be grown on the surface of the substrate in the presence of the fluorine atoms. | 11-20-2014 |
20140338589 | Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods - Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein. | 11-20-2014 |
20140345517 | METHOD FOR THE FORMATION OF NANO-SCALE ON-CHIP OPTICAL WAVEGUIDE STRUCTURES - A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel. | 11-27-2014 |
20150083036 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME - A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate. | 03-26-2015 |
20150128850 | Pretreatment Method for Reduction and/or Elimination of Basal Plane Dislocations Close to Epilayer/Substrate Interface in Growth of SiC Epitaxial Films - Non-destructive pretreatment methods are generally provided for a surface of a SiC substrate with substantially no degradation of surface morphology thereon. In one particular embodiment, a molten suspension mixture (e.g., including KOH (or KOH eutectic) and a buffering agent) is applied directly onto the surface of the SiC substrate to form a treated surface thereon. An epitaxial film (e.g., SiC) can then be grown on the treated surface to achieve very high (e.g., up to and including 100%) BPD to TED conversion rate close to the epilayer/substrate interface. | 05-14-2015 |
20150292112 | METHODS OF FORMING GRAPHENE SINGLE CRYSTAL DOMAINS - A method of forming graphene single crystal domains on a carbon substrate is described. | 10-15-2015 |
20150376814 | PROCESS FOR PRODUCING MOULDED MICROMETIRC, SUBMICROMETRIC OR NANOMETRIC SIZED ELEMENTS MADE OF MONOCRYSTALLINE DIAMOND OR OF DIAMOND WITH A VERY LOW DENSITY OF GRAIN BOUNDARIES - A process for producing moulded elements made of diamond of nanometric, submicrometric or micrometric sizes, the process comprising the following steps: a) forming beads of nanometric, submicrometric or micrometric sizes, each bead comprising a diamond nanoparticle embedded in an embedding material, by contacting diamond particles of nanometric sizes with an embedding material; b) introducing a bead into cavities of a sacrificial mould, the cavities forming a replica of the elements to be produced; c) removing the embedding material; d) forming diamond elements in the cavities containing a nanoparticle, by growing diamond from nanoparticles; e) releasing the diamond elements, by partially or totally removing the sacrificial mould. | 12-31-2015 |
20160017515 | HETEROGENEOUS MATERIAL INTEGRATION THROUGH GUIDED LATERAL GROWTH - Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride. | 01-21-2016 |
117097000 | Material removal (e.g., etching, cleaning, polishing) | 21 |
20100012022 | Diamond Uses/Applications Based on Single-Crystal CVD Diamond Produced at Rapid Growth Rate - The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds. | 01-21-2010 |
20100212581 | SILICON FILM FORMATION APPARATUS AND METHOD FOR USING SAME - A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system. | 08-26-2010 |
20100242834 | Method for producing single crystalline diamonds - A method for producing one or more single crystalline diamonds. The method comprises placing one or more substrates on a substrate holder in chemical vapor vaporization (CVD) chamber. A mixture of gases including at least one gas having a carbon component is provided adjacent to the one or more substrates in the CVD chamber. Thereafter, the mixture of gases is exposed to microwave radiation to generate a plasma. Reactive species of nitrogen produced in a remote reactive gas generator are introduced in the plasma. Then, the one or more substrates are exposed to the plasma, such that diamond growth occurs at a rate of 10 to 100 microns per hour, to produce one or more single crystalline diamonds. | 09-30-2010 |
20100275836 | METHOD FOR GROWING GROUP III NITRIDE CRYSTAL - The present method for growing group III nitride crystal includes the steps of: preparing a substrate including group III nitride seed crystal constituting one main surface thereof; forming a plurality of facets on the main surface of the substrate through vapor phase etching; and growing group III nitride crystal on the main surface on which the facets are formed. In this way, group III nitride crystal having a low dislocation density can be obtained readily and efficiently. | 11-04-2010 |
20100288192 | METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER - A silicon oxide film on a wafer front surface, including on internal surfaces of pits, is removed by hydrogen fluoride gas. The pits are thus completely filled with a film growth component at a time of epitaxial film growth. Thereby, productivity is not reduced; wafer flatness is enhanced; and micro-roughness of the wafer front surface is improved. | 11-18-2010 |
20110017127 | APPARATUS AND METHOD FOR PRODUCING EPITAXIAL LAYERS - An apparatus and process for plasma enhanced chemical vapor deposition with an inductively coupled plasma with ion densities above 10 | 01-27-2011 |
20110290176 | CLUSTER TOOL FOR EPITAXIAL FILM FORMATION - Systems, methods, and apparatus are provided for using a cluster tool to pre-clean a substrate in a first processing chamber utilizing a first gas prior to epitaxial film formation, transfer the substrate from the first processing chamber to a second processing chamber through a transfer chamber under a vacuum, and form an epitaxial layer on the substrate in the second processing chamber without utilizing the first gas. Numerous additional aspects are disclosed. | 12-01-2011 |
20120090536 | METHOD FOR PRODUCING SILICON EPITAXIAL WAFER - The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously. | 04-19-2012 |
20120145070 | PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY - A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO | 06-14-2012 |
20120180716 | METHODS FOR EPITAXIAL SILICON GROWTH - Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma. | 07-19-2012 |
20120234230 | SUBSTRATE TEMPERATURE UNIFORMITY DURING RAPID SUBSTRATE HEATING - A system and methods are provided for low temperature, rapid baking to remove impurities from a semiconductor surface prior to in-situ deposition. The system is configured with an upper bank of heat elements perpendicular to the gas flow path, such that when the substrate is heated, the temperature across the substrate can be maintained relatively uniform via zoned heating. Advantageously, a short, low temperature process is suitable for advanced, high density circuits with shallow junctions. Furthermore, throughput is greatly improved by the low temperature bake. | 09-20-2012 |
20130145984 | METHOD OF EPITAXIAL GROWTH EFFECTIVELY PREVENTING AUTO-DOPING EFFECT - This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region. | 06-13-2013 |
20140014030 | METHODS FOR PRODUCTION OF SINGLE-CRYSTAL GRAPHENES - In some embodiments, the present disclosure pertains to methods of forming single-crystal graphenes by: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source to the surface of the catalyst; and (4) growing single-crystal graphene on the surface of the catalyst from the carbon source. Further embodiments of the present disclosure also include a step of separating the formed single-crystal graphene from the surface of the catalyst. In some embodiments, the methods of the present disclosure also include a step of transferring the formed single-crystal graphene to a substrate. Additional embodiments of the present disclosure also include a step of growing stacks of single crystals of graphene. | 01-16-2014 |
20140174343 | METHOD FOR MAKING TOPOLOGICAL INSULATOR STRUCTURE - A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi. | 06-26-2014 |
20140190399 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS - A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas. | 07-10-2014 |
20140251205 | METHODS AND SYSTEMS FOR THIN FILM DEPOSITION PROCESSES - A system for depositing a film on a substrate comprises a lateral control shutter disposed between the substrate and a material source. The lateral control shutter is configured to block some predetermined portion of source material to prevent deposition of source material onto undesirable portion of the substrate. One of the lateral control shutter or the substrate moves with respect to the other to facilitate moving a lateral growth boundary originating from one or more seed crystals. A lateral epitaxial deposition across the substrate ensues, by having an advancing growth front that expands grain size and forms a single crystal film on the surface of the substrate. | 09-11-2014 |
20150040822 | METHOD AND APPARATUS FOR PRECLEANING A SUBSTRATE SURFACE PRIOR TO EPITAXIAL GROWTH - Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process. | 02-12-2015 |
20160053403 | METHOD OF EPITAXIAL GROWTH OF A GERMANIUM FILM ON A SILICON SUBSTRATE - A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH | 02-25-2016 |
20160160387 | Linear Cluster Deposition System - A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. | 06-09-2016 |
20160168752 | METHOD FOR PRETREATMENT OF BASE SUBSTRATE AND METHOD FOR MANUFACTURING LAYERED BODY USING PRETREATED BASE SUBSTRATE | 06-16-2016 |
20160254137 | PLASMA PRE-CLEAN MODULE AND PROCESS | 09-01-2016 |