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FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)

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117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

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Class / Patent application numberDescriptionNumber of patent applications / Date published
117088000 With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) 127
117106000 With pretreatment or preparation of a base (e.g., annealing) 16
117085000 With a step of measuring, testing, or sensing 15
117108000 Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE) 9
117107000 With movement of substrate or vapor or gas supply means during growth 4
20130036968FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit.02-14-2013
20090139448VAPOR PHASE GROWTH APPARATUS ANS VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus and a vapor phase growth method capable of improving the yield rate of wafers by stopping infiltration of metal contaminants generated below a horizontal disk-like susceptor is provided. The vapor phase growth apparatus according to embodiments of the present invention includes a holder having an annular shape and on which a wafer can be placed, a disk-shaped susceptor on which the holder can be placed and provided on an upper surface thereof with circumferential steps inscribed in inner circumferential edge of the holder when the holder is placed, a rotation driving mechanism for rotating the susceptor and the holder at a predetermined rotational speed, a heating mechanism for heating the wafer placed on the holder, and a wafer push-up mechanism to push up an undersurface of the holder outside the rotation driving mechanism.06-04-2009
20110083602Multi-Rotation Epitaxial Growth Apparatus and Reactors Incorporating Same - A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes.04-14-2011
20080314311HVPE SHOWERHEAD DESIGN - A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.12-25-2008
117105000 Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) 4
20130061801METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL - Provided is a method for manufacturing a silicon carbide crystal, including the steps of: placing a seed substrate and a source material for the silicon carbide crystal within a growth container; and growing the silicon carbide crystal with a diameter of more than 4 inches on a surface of the seed substrate by a sublimation method, in the step of growing, a pressure within the growth container being changed from a predetermined pressure, at a predetermined change rate.03-14-2013
20090000541Atomic layer epitaxy processed insulation - In one embodiment the present invention proved for a method for depositing a thin film layer onto a composite tape 01-01-2009
20100031877SIC SINGLE CRYSTALS WITH REDUCED DISLOCATION DENSITY GROWN BY STEP-WISE PERIODIC PERTURBATION TECHNIQUE - In a crystal growth method, a seed crystal 02-11-2010
20120227663OXIDE METAL SEMICONDUCTOR SUPERLATTICES FOR THERMOELECTRICS - Lanthanum strontium manganate (La09-13-2012
117087000 Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) 2
20090255459Method for making zinc oxide nano-structrure - A method for making zinc oxide nano-structure, the method includes the following steps. Firstly, providing a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, providing a growing substrate and forming a metal layer thereon. Thirdly, depositing a catalyst layer on the metal layer. Fourthly, placing the growing substrate into the reacting room together with a quantity of zinc source material. Fifthly, introducing a oxygen-containing gas into the reacting room. Lastly, heating the reacting room to a temperature range of 500˜1100° C.10-15-2009
20100229788THREE-DIMENSIONAL GAN EPITAXIAL STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO09-16-2010
117109000 Fully-sealed or vacuum-maintained chamber (e.g., ampoule) 2
20100192840SEMICONDUCTOR HETEROJUNCTION DEVICES BASED ON SiC08-05-2010
20110155051MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A manufacturing apparatus for growing a SiC single crystal on a surface of a seed crystal that is made of a SiC single crystal substrate by supplying a source gas of SiC from a lower side of a vacuum chamber toward the seed crystal includes a pedestal, a rod member, and a cooling system. The pedestal is disposed in the vacuum chamber. The pedestal has a first surface on which the seed crystal is disposed and a second surface opposed to the first surface. The rod member holds the pedestal. The cooling system includes a temperature control pipe and a coolant temperature controller. The temperature control pipe is disposed on the second surface side of the pedestal. The coolant temperature controller controls a temperature of a coolant that flows to the temperature control pipe.06-30-2011
Entries
DocumentTitleDate
20100083897Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.04-08-2010
20080257256BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.10-23-2008
20120174858BASE AND METHOD FOR MAKING EPITAXIAL STRUCTURE USING THE SAME - A base for making an epitaxial structure is provided. The base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface. The carbon nanotube layer is located on the epitaxial growth surface. The carbon nanotube layer defines a plurality of apertures to expose part of the epitaxial growth surface so that an epitaxial layer can grow from an exposed epitaxial growth surface and through the apertures. A method for making an epitaxial structure using the base is also provided.07-12-2012
20090158994METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL - A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material 06-25-2009
20090139447METHOD FOR FORMING CRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - It is an object to provide a method for forming a crystalline semiconductor film in which a transition layer is not formed or which includes a thinner transition layer than that in a crystalline semiconductor film which is formed by conventional method, and a method for manufacturing a thin film transistor to which the above method is applied. A semiconductor film including hydrogen is formed over a substrate or over an insulating film formed over a substrate. The semiconductor film including hydrogen undergoes surface wave plasma treatment, which is performed in a gas including hydrogen and/or a rare gas, to generate a crystal nucleus in the semiconductor film including hydrogen. The crystal nucleus is grown to form a crystalline semiconductor film by employing a plasma CVD method.06-04-2009
20130068157METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL - A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide crystal by oxidizing carbon. According to the manufacturing method, by gasifying the base integrated with the silicon carbide crystal by oxidizing carbon forming the base, the base is removed from the silicon carbide crystal. Therefore, since it is not necessary to apply physical force to the silicon carbide crystal or the base for separating them from each other, occurrence of a defect involved with removal of the base can be suppressed. Therefore, high-quality silicon carbide crystal having fewer defects can be manufactured.03-21-2013
20090056618Method for producing group III Nitride single crystal - A method for producing a group III nitride single crystal (ingot) includes providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area and growing the group III nitride single crystal on the first crystal face and the second crystal face by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. A method for producing a group III nitride single crystal substrate includes further cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal (ingot).03-05-2009
20130061800HIGH HEAT-RESISTANT MEMBER, METHOD FOR PRODUCING THE SAME, GRAPHITE CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL INGOT - A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction spectrum of not more than 0.2° from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD spectrum using the Lotgering method is within a range from −0.2 to 0.2.03-14-2013
20090007841VAPOR-PHASE GROWING APPARATUS AND VAPOR-PHASE GROWING METHOD - A vapor-phase growing apparatus and a vapor-phase growing method which reduce sticking of a wafer to a holder during vapor-phase growth are provided. In the vapor-phase growing apparatus, a holder arranged in a chamber includes a disk-like member having a recessed portion at the center of a holder or a ring-like member having a recessed portion at a center of a holder and having an opening in a bottom center of the holder. A first projecting portion is arranged on an inner circumference wall surface of the holder, and a second projecting portion is formed on a bottom surface of the recessed portion of the holder. In this manner, the holder can support a wafer with a small contact area. In vapor-phase growth, the wafer can be prevented from sticking to the holder.01-08-2009
20100089311Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application.04-15-2010
20110290174ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER - A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.12-01-2011
20110214606APPARATUS AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A crucible includes: a crucible body configured to hold the sublimation raw material; a lid configured to close an opening of the crucible body and provided with a mounting portion configured to support the seed crystal; and a guide member extending toward a sublimation raw material side from an outer peripheral portion of the mounting portion. The guide member has a cover portion configured to cover an outer peripheral portion of the seed crystal from the sublimation raw material side, the cover being protruded from a mounting unit side end portion provided on a mounting portion side.09-08-2011
20090205562METHOD FOR MANUFACTURING EPITAXIAL WAFER - In a method for manufacturing an epitaxial wafer by which an epitaxial layer is formed on a surface of a silicon wafer arranged in a reactor by distributing a raw material gas in the reactor, a temperature of a susceptor at the time of carrying the silicon wafer into the reactor is adjusted in accordance with a resistivity of the silicon wafer. There is provided the method for manufacturing an epitaxial wafer, the method enabling reduction in generation of particles from friction of a back surface edge portion and the susceptor due to warpage of the wafer caused at the time of carriage into the reactor and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus.08-20-2009
20080271667Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d11-06-2008
20090320746METHOD FOR PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR - The present invention provides a method for producing a Group III-V compound semiconductor, comprising a step of feeding a Group III raw material, a Group V raw material, a carrier gas, and if necessary, other raw materials, to a reactor to grow a Group III-V compound semiconductor on a substrate in the reactor by a metalorganic vapor phase epitaxy, wherein the Group III raw material and the Group V raw material are independently fed to the reactor, and hydrogen halide is fed to the reactor together with a raw material other than the Group V raw material, or the carrier gas.12-31-2009
20080289570Process for Producing Silicon Carbide Single Crystal - This invention reduces planar defects which occur within a silicon carbide single crystal when a silicon carbide single crystal is epitaxially grown on a single crystal substrate.11-27-2008
20100147212MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME - Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1006-17-2010
20100139552Axial Gradient Transport Growth Process and Apparatus Utilizing Resistive Heating - A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.06-10-2010
20110239930METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - At a stage where the growth height of the silicon carbide single crystal 10-06-2011
20090126624Method of Producing silicon carbide epitaxial layer - A method of producing an epitaxial layer on a substrate of silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a thickness uniformity that is better than 5% at a growth rate which is at least 100 μm/hour. The method comprises providing a cavity with a source material and a substrate of monolithic silicon carbide, evacuating the cavity and raising the temperature to 1400° C. Then the temperature is increased at a rate of about 20° C./min until a predetermined growth temperature is reached. Thereafter, the temperature is kept such that a predetermined growth rate between 10 μm/min and 300 μm/min is obtained.05-21-2009
20110253034CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL - In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.10-20-2011
20110107961SINGLE CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD - The device is equipped with a crucible main body (05-12-2011
20100242833AlN Crystal and Method of Its Growth - The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate (09-30-2010
20110073034APPARATUS AND PROCESS FOR CRYSTAL GROWTH - The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.03-31-2011
20090255458Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same - The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1010-15-2009
20110114013FILM DEPOSITION APPARATUS AND METHOD - A deposition apparatus 05-19-2011
20120000414GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL - In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.01-05-2012
20110155048MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A silicon carbide single crystal manufacturing apparatus includes a pedestal on which a seed crystal is disposed and a heating crucible disposed on an upstream side of a flow channel of source gas with respect to the pedestal. The heating crucible supplies the source gas to the seed crystal by introducing the source gas from an upstream end of a hollow cylindrical member and discharging the source gas from a downstream end of the hollow cylindrical member. A diameter narrowing part is disposed on the downstream end and has an opening portion that is smaller than an opening size of the hollow cylindrical member. The whole opening portion of the diameter narrowing part is included in a region that is defined by projecting an outer edge of the pedestal in a center axis direction of the heating crucible.06-30-2011
20120060749APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - Disclosed is an apparatus (03-15-2012
20110265709Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing Apparatus - Nitride semiconductor crystal manufacturing method according to which the following steps are carried out. To begin with, a crucible (11-03-2011
20120285370SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS - In SiC sublimation crystal growth, a crucible is charged with SiC source material and SiC seed crystal in spaced relation and a baffle is disposed in the growth crucible around the seed crystal. A first side of the baffle in the growth crucible defines a growth zone where a SiC single crystal grows on the SiC seed crystal. A second side of the baffle in the growth crucible defines a vapor-capture trap around the SiC seed crystal. The growth crucible is heated to a SiC growth temperature whereupon the SiC source material sublimates and forms a vapor which is transported to the growth zone where the SiC crystal grows by precipitation of the vapor on the SiC seed crystal. A fraction of this vapor enters the vapor-capture trap where it is removed from the growth zone during growth of the SiC crystal.11-15-2012
20100147211-Nitride Single-Crystal Growth Method - This III-nitride single-crystal growth method, being a method of growing a Al06-17-2010
20130180446SUSCEPTOR - A susceptor includes a plurality of holes in a first area and a plurality of holes in a second area. The first and second areas overlap a location which corresponds to at least one portion of a semiconductor device to be processed. The holes in the first area are provided in a first pattern and the holes in the second area are provided in a second pattern which may be different from the second pattern. The first and second patterns may differ, for example, based on the size, arrangement, spacing, location, and/or density of the holes.07-18-2013
20080202409Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate - A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).08-28-2008
20110308449CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE - The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus.12-22-2011

Patent applications in class FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)

Patent applications in all subclasses FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)