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Havin growth from molten state (e.g., solution melt)

Subclass of:

117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

117011000 - PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
117073000 Havin growth from molten state (e.g., solution melt) 89
20100089310DEVICE AND METHOD FOR PRODUCING SELF-SUSTAINED PLATES OF SILICON OR OTHER CRYSTALLINE MATERIALS - The device for producing a sheet of crystalline material by directional solidification of a material in liquid phase composed of a crucible provided with a bottom, side walls and at least one horizontal outlet slot arranged on a bottom part of a side wall. On its external surface in immediate proximity to the slot, the crucible presents electromagnetic means for creating magnetic repulsion forces on the material in liquid phase, at least at the level of the slot. An alternating current with a frequency comprised between 10 kHz and 300 kHz flows through the electromagnetic means. To foster stirring of the material in liquid phase, a low frequency can be used in addition to the above frequencies.04-15-2010
20130036967SELECTED METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE - A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.02-14-2013
20090084309METHOD OF PRODUCTION OF SiC SINGLE CRYSTAL - A method of production of SiC single crystal using the solution method able to stably maintain flatness of a growth surface, prevent polycrystallization, and grow a large sized SiC single crystal is provided. A method of growing a hexagonal SiC single crystal starting from a hexagonal SiC seed crystal held directly under a melt surface of an Si melt in a graphite crucible by maintaining in the Si melt a temperature gradient such that the temperature falls from the inside toward the melt surface of the Si melt, characterized by:04-02-2009
20100037815Method For Producing A Single Crystal Of Semiconductor Material - A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.02-18-2010
20090090295METHOD FOR GROWING SILICON INGOT - Provided is a method for growing a silicon ingot. According to an exemplary method, the method includes charging silicon in a quartz crucible, melting the silicon by heating the quartz crucible and applying a magnetic field of 500 Gauss or higher in the quartz crucible, and growing a single crystalline silicon ingot from the melted silicon while applying a magnetic field lower than 500 Gauss in the quartz crucible. As a result, by appropriately controlling the internal pressure of the quartz crucible or the application time and the magnitude of the magnetic field, it is possible to easily accelerate crystallization of the internal surface of the quartz crucible to thereby prevent flaking of the crystals. Consequently, it is possible to grow the silicon ingot of good properties.04-09-2009
20100288187METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL - In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.11-18-2010
20080282969CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A crystal growth method, comprising the steps of: a) bringing a nitrogen material into a reaction vessel in which a mixed molten liquid comprising an alkaline metal and a group-III metal; and b) growing a crystal of a group-III nitride using the mixed molten liquid and the nitrogen material brought in by the step a) in the reaction vessel, wherein a provision is made such as to prevent a vapor of the alkaline metal from dispersing out of the reaction vessel.11-20-2008
20080289569Method for Producing Group 13 Metal Nitride Crystal, Method for Manufacturing Semiconductor Device, and Solution and Melt Used in Those Methods - A process for producing a Group 13 metal nitride crystal, comprising performing the growth of a Group 13 metal nitride crystal in a solution or melt comprising an ionic solvent having dissolved therein a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table. According to this production process, a good-quality Group 13 metal nitride crystal can be produced under low or atmospheric pressure by an industrially inexpensive method.11-27-2008
20090158993Method for producing a monocrystalline or polycrystalline semiconductore material - The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method.06-25-2009
20100050932Apparatus and Method of Direct Electric Melting a Feedstock - This invention relates to an apparatus and a method of direct electric melting a feedstock, such as high purity silicon for use in solar cells or solar modules. The continuous melting apparatus includes a first electrode opposite a second electrode and forming a melting zone. The electric current passes from the first electrode through a feedstock and enters the second electrode. The apparatus also includes an opening for draining a molten feedstock from the melting zones and a catch pan for receiving the molten feedstock from the opening.03-04-2010
20100236472METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL - A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.09-23-2010
20100083896METHOD FOR PRODUCING SIC SINGLE CRYSTAL - 5 to 30 at % of Ti and 1 to 20 at % of Sn or 1 to 30 at % of Ge are added to an Si melt, and SiC single crystal are grown from SiC seed crystal by holding the SiC seed crystal immediately beneath the surface of the Si melt in a graphite crucible while maintaining temperature gradient descending from the inner side of the Si melt to the surface of the melt.04-08-2010
20110048316High-Temperature Process Improvements Using Helium Under Regulated Pressure - A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.03-03-2011
20100294195METHOD FOR CHARGING WITH LIQUEFIED AMMONIA, METHOD FOR PRODUCING NITRIDE CRYSTAL, AND REACTOR FOR GROWTH OF NITRIDE CRYSTAL - A method for charging with liquefied ammonia comprising sequentially a feeding step of feeding gaseous ammonia in a condenser, a liquefaction step of converting the gaseous ammonia into a liquefied ammonia in the condenser, and a charging step of feeding the liquefied ammonia formed in the condenser to a vessel to thereby charge the vessel with the liquefied ammonia wherein a cooling step of feeding the liquefied ammonia formed in the condenser to the vessel and cooling the vessel by the latent heat of vaporization of the liquefied ammonia and a circulation step of feeding the gaseous ammonia formed through vaporization of the liquefied ammonia in the previous cooling step to the condenser are carried out between the liquefaction step and the charging step.11-25-2010
20110155047METHOD AND STRUCTURE FOR NONLINEAR OPTICS - A nonlinear optical crystal having a chemical formula of Y06-30-2011
20090249997METHOD OF PRODUCING GROUP III NITRIDE CRYSTAL, APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND GROUP III NITRIDE CRYSTAL - In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.10-08-2009
20130008370METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL - Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.01-10-2013
20090025628HYBRID STOCKBARGER ZONE-LEVELING MELTING METHOD FOR DIRECTED CRYSTALLIZATION AND GROWTH OF SINGLE CRYSTALS OF LEAD MAGNESIUM NIOBATE-LEAD TITANATE (PMN-PT) SOLID SOLUTIONS AND RELATED PIEZOCRYSTALS - This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.01-29-2009
20130008371METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT - A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≦X<30 mm), a second zone from X to Y in height (30 min≦Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≦V1≦20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≦V2≦5 mm/h.01-10-2013
20100288188METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL - In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.11-18-2010
20080302297Method of recovering sodium metal from flux - It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 12-11-2008
20120279439METHOD AND APPARATUS FOR PURIFYING METALLURGICAL SILICON FOR SOLAR CELLS - A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.11-08-2012
20130112135THERMAL LOAD LEVELING USING ANISOTROPIC MATERIALS - An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.05-09-2013
20080282968Method of Growing Single Crystals from Melt - The present invention relates to the technology of growing single crystals from melts on a seed crystal. The technical problem to be solved by the present invention is to provide a universal method of growing single crystals of various chemical composition, for example, of A2B6 and A2B5 type, and also single crystals of refractory oxides, such as sapphire. The technical result of the claimed invention is its universality with regard to the material of the single crystal to be grown, enhanced performance, and improved structural finish of resulting single crystals by ruling out melt overcooling in the coursed of growing. The technical result is attained by that in the method of growing single crystals from melt, which comprises fusing the starting material and pulling a single crystal by crystallization of the melt on a seed crystal with controlled removal of the crystallization heat and using independent heating sources constituting thermal zones, according to the invention, independent heating sources constitute two equal-sized coaxially arranged thermal zones, which make up a united thermal area for the melt and the single crystal being grown and are separated by the melt starting material being carried out heating the upper thermal zone with heater 30-50% of power required for obtaining the melt, until in the upper thermal zone maximum temperature is reached, which secure stable state of the solid phase of the seed crystal; then the remaining power is supplied to the lower thermal zone to the lower heater with maintaining constant temperature of the upper thermal zone till complete melting of the charge; the process of the single crystal enlargement and growing is conducted with controlled lowering of temperature in the upper thermal zone, the amount of power supplied to the lower thermal zone being preserved constant.11-20-2008
117074000 Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) 6
20100037816CRYSTAL GROWING SYSTEM HAVING MULTIPLE CRUCIBLES AND USING A TEMPERATURE GRADIENT METHOD - A multiple crucible crystal growing system using a temperature gradient method is disclosed. The system comprises a crystal furnace, a plurality of crucibles, and an elevating device, wherein the furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner includes an outer shell, a fiber insulation layer, an insulation brick layer, and a refractory layer. The height of the refractory layer is ⅔-⅚ of the height of the hearth, and the heater is located at ¼-½ of the height of the hearth. The hearth is in rectangular shape and able to hold multiple crucibles to grow crystals simultaneously. The present invention ensures doping concentration and uniformity. Therefore, it can be widely applied in the area of crystal growth.02-18-2010
20090101062Method for Producing Silicon Carbide Single Crystal - A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b): 04-23-2009
20110000424METHOD FOR THE CRYSTALLOGENESIS OF A MATERIAL ELECTRICALLY CONDUCTING IN THE MOLTEN STATE - The disclosure relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of the material in a crucible, that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; the method including that the electromagnetic kneading is obtained by applying an alternating magnetic field. The disclosure also relates to a device for implementing the method.01-06-2011
20100116196Systems, Methods and Substrates of Monocrystalline Germanium Crystal Growth - Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics.05-13-2010
20110120365PROCESS FOR REMOVAL OF CONTAMINANTS FROM A MELT OF NON-FERROUS METALS AND APPARATUS FOR GROWING HIGH PURITY SILICON CRYSTALS - A process for removal of contaminants from a melt of non-ferrous metals comprising the following steps: providing an apparatus (05-26-2011
20100012020METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced on a seed crystal substrate 01-21-2010
117075000 Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method) 2
20130186326GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.07-25-2013
20130192517Method And System For Alumina Nanofibers Synthesis From Molten Aluminum - A method for synthesizing monocrystalline alumina nanofibers by controlled liquid phase oxidation of a melt including molten aluminum. The method comprises two stages. During the first stage, metallic aluminum is melted and various additives are introduced into the melt. During the second stage, the alumina nanofibers are synthesized from the resulting melt in the presence of oxygen. In one or more embodiments, the inventive method is performed in a reactor. The reactor is designed to provide the heating and to enable melting of metallic aluminum. In addition, the reactor is designed to maintain a sustained temperature of between 660° C. and 1,000° C. When the additives are introduced into the molten aluminum, it is desirable to provide steady and uniform the stirring of the melt. To this end, the reactor may be provided with a stirring mechanism.08-01-2013
117076000 Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant) 3
20110114012METHODS FOR PURIFYING METALLURGICAL SILICON - A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 05-19-2011
20120279440METHODS FOR PURIFYING METALLURGICAL SILICON - A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.11-08-2012
20130008372METHOD FOR PURIFYING SILICON - A method for purifying silicon includes placing silicon to be purified and an aluminum-silicon alloy ingot, made from high purity aluminum in close contact in a closed environment to be subjected to heating under vacuum, such that the aluminum-silicon alloy ingot is melted into an aluminum-silicon melt. The temperatures are kept constant when the temperature M the interface of the silicon and the aluminum-silicon melt and the temperature at a free end of the aluminum-silicon melt reach 900° C. and 800° C. respectively. As the purified silicon begins to segregate and the interface, the heating apparatus is moved in step with the growth rate of the segregated silicon toward the silicon to be purified to maintain the temperatures at both ends of the aluminum-silicon melt. The segregated pure silicon is cut off upon the completion of dissolution of purified silicon and after cooling and air pressure recovery.01-10-2013
117077000 Gas or vapor state precursor or overpressure 8
20100192839PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL - A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.08-05-2010
20090145350METHOD OF INJECTING DOPANT GAS - According to an dopant-injection method for injecting volatilized dopant gas into semiconductor melt in a crucible (06-11-2009
20090139446PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON INGOT - Provided is a process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melting method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown.06-04-2009
20090126623Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor - The present invention provides an apparatus for producing a Group III nitride semiconductor, which enables production of a uniform Si-doped GaN crystal. In one embodiment of the invention, an apparatus for producing a Group III nitride semiconductor includes a supply tube for supplying nitrogen and silane, a Ga-supplying apparatus for supplying Ga melt to a crucible, and an Na-supplying apparatus for supplying Na melt to the crucible. Nitrogen and a dopant is mixed together, and the gas mixture is supplied through one single supply tube without provision of a conventionally employed supply tube for only supplying a dopant. Thus, dead space in a reaction vessel is reduced, and vaporization of Na is suppressed, whereby a high-quality, Si-doped GaN crystal can be produced.05-21-2009
20110259261REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL - It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.10-27-2011
20120137961METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME - Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.06-07-2012
20120260848Single crystal growth method for vertical high temperature and high pressure group III-V compound - The invention discloses a single crystal growth method for a vertical high temperature and high pressure group III-V compound. A vertical high temperature and high pressure stove is capable of providing a group III element fusion zone with a temperature equal to or greater than that of a composition melting point and providing a group V element provision zone below the group III element fusion zone. The stove provides steam to the group III element fusion zone and the group V element provision zone at a temperature greater than evaporation temperature. The compound synthesis of a group III element and a group V element is completed in the group III element fusion zone, and an in-situ growth of single crystal is completed in the group III element fusion zone, thereby preventing the growth of the rich group III element and increasing the single crystal process efficiency.10-18-2012
20100229787Crystal Manufacturing Apparatus - A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.09-16-2010
117078000 Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) 17
20120111264METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL - A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface 05-10-2012
20110203516METHOD FOR PRODUCING A CRYSTALLIZED SEMICONDUCTOR MATERIAL - A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature.08-25-2011
20120125255METHOD AND APPARATUS FOR PRODUCING CRYSTAL OF METAL NITRIDE OF GROUP 13 OF THE PERIODIC TABLE - A method for producing a crystal of a metal nitride of Group 13 of the periodic table, the method comprises:05-24-2012
20120125254Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace - A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane.05-24-2012
20120255484SYSTEM AND METHODS FOR GROWING HIGH-RESISTANCE SINGLE CRYSTALS - A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.10-11-2012
20100326350Magnetic garnet single crystal and optical element using same as well as method of producing single crystal - The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula Bi12-30-2010
117079000 Unusable portion contains a metal atom (e.g., diamond or CBN growth in metal solvent) 10
20130160700STEP HEATING PROCESS FOR GROWING HIGH QUALITY DIAMOND - Disclosed is a method of growing a diamond, including the steps of providing a diamond seed in a reaction chamber; providing a protective layer above the diamond seed; providing a catalyst above the protective layer; providing a carbon source above the catalyst; applying pressure to the reaction chamber; heating the catalyst to a first temperature; holding the first temperature for a first duration; heating the catalyst to a second temperature; and holding the second temperature for a second duration.06-27-2013
20110277680ARTIFICIAL CORUNDUM CRYSTAL - An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal has at least one crystal face selected from {113}, {012}, {014}, {113}, {110}, {101}, {116}, {211}, {122}, {214}, {100}, {125}, {223}, {131}, and {312} faces. The process for producing the artificial corundum crystal is by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.11-17-2011
20110271900HIGH PRESSURE HIGH TEMPERATURE (HPHT) METHOD FOR THE PRODUCTION OF SINGLE CRYSTAL DIAMONDS - A high pressure high temperature (HPHT) method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least (1) and a growth surface substantially parallel to a {110} crystallographic plane is utilised is described. The growth is effected at a temperature in the range from 1280° C. to 1390° C.11-10-2011
20120291695METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS - A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and rectystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkali earth metal, or boronitride of alkali metal and the boronitride of alkali earth metal.11-22-2012
20090205561METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME - A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li08-20-2009
20090255457SYSTEM AND METHOD FOR EPITAXIAL DEPOSITION OF A CRYSTAL USING A LIQUID-SOLVENT FLUIDIZED-BED MECHANISM - A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps).10-15-2009
20090038539PROCESS FOR PRODUCING SINGLE CRYSTAL - A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 02-12-2009
20110185964METHOD AND SYSTEM FOR DIAMOND DEPOSITION USING A LIQUID-SOLVENT CARBON-TRANFSER MECHANISM - A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g., valves, heaters, coolers, pumps).08-04-2011
20090293805Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal - It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.12-03-2009
20100288189Floating Semiconductor Foils - One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T11-18-2010
117080000 Unusable portion contains an oxygen atom (e.g., oxide flux) 1
20120111265METHOD AND STRUCTURE FOR NONLINEAR OPTICS - A nonlinear optical crystal having a chemical formula of Y05-10-2012
117081000 Growth confined by a solid member other than seed or product (e.g., Bridgman-Stockbarger method) 29
20110203517DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS - A device for the production of silicon blocks comprising a vessel for receiving a silicon melt with at least one vessel wall, with the at least one vessel wall comprising a nucleation-inhibiting coating on at least part of an inside or with the at least one vessel wall consisting of a nucleation-inhibiting material.08-25-2011
20090165703Silicon ingot fabrication - A method of and apparatus for growing single crystal silicon ingots is disclosed. The apparatus includes a charge structure with one or more charge units that are substantially multi-crystalline or single crystal silicon. The silicon charge structure is preferably coupled to a single crystal seed structure that can be used to grow a silicon ingot after the silicon charge unit is melted into a quartz growing crucible. The silicon charge units can be linked together through silicon linking structures that are threaded into or otherwise secured to the silicon charge units. In accordance with the method of the invention a crucible holding poly-silicon stock and the silicon charge structure are isolated within a process chamber. A process melt is formed and charged with the silicon charge structure, and a silicon ingot is formed without exposing the crystal growing chamber to an outside environment.07-02-2009
20080210156Casting method for polycrystalline silicon - In a casting method for polycrystalline silicon in which a bottomless cooling crucible with a part of a certain length in an axial direction being circumferentially and plurally sectioned is provided inside an induction coil, producing a silicon melt within the cooling crucible by means of electromagnetically induced heating by the induction coil, and withdrawing the silicon melt in a downward direction while being solidified, an alternating current with a frequency of 25-35 kHz is applied on the induction coil. According to the casting method for polycrystalline silicon of the present invention, in addition to preventing rapid cooling of the ingot surface at the time of solidifying the molten silicon and producing the ingot, the stirring of the molten silicon inside the crucible is suppressed to thereby promote the growth of large diameter crystals, with the result that the conversion efficiency of the cast polycrystalline silicon used as solar cells is increased.09-04-2008
20080271666Method and Apparatus for Preparing Crystal - A method and an apparatus for producing crystals wherein crystal quality can be kept and a crystal composition is uniformed from a growth early stage to a growth last stage are provided. In an apparatus for producing crystals wherein the crystals 11-06-2008
20110220012CRYSTAL GROWTH APPARATUS WITH LOAD-CENTERED APERTURE, AND DEVICE AND METHOD FOR CONTROLLING HEAT EXTRACTION FROM A CRUCIBLE - A crystal growth apparatus includes a crucible arranged on a support mechanism, and at least two plates formed below the support mechanism and movable in a coordinated manner to form a symmetrical aperture centered with respect to an ingot being formed in the crucible, and a drive mechanism for driving the plates with one degree of freedom. The plates open in a plurality of discrete positions to form an aperture that is load centered with respect to the ingot being formed, in order to promote directional solidification of the ingot being formed, and thus achieve a desired convex profile of the ingot.09-15-2011
20130213297METHODS AND APPARATUSES FOR MANUFACTURING CAST SILICON FROM SEED CRYSTALS - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.08-22-2013
20100147210 HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH - An improved high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a release sleeve, a heater, at least one ceramic segment or ring but can be multiple segments or rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. Following a run, the release sleeve may be at least partially dissolved or etched to facilitate removal of the capsule from the apparatus.06-17-2010
20090320745HEATER DEVICE AND METHOD FOR HIGH PRESSURE PROCESSING OF CRYSTALLINE MATERIALS - An improved heater for processing materials or growing crystals in supercritical fluids is provided. In a specific embodiment, the heater is scalable up to very large volumes and is cost effective. In conjunction with suitable high pressure apparatus, the heater is capable of processing materials at pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.12-31-2009
20090320744HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH - A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.12-31-2009
20110146566SYSTEM AND METHOD FOR CRYSTAL GROWING - To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.06-23-2011
20110247549METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL - A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.10-13-2011
20110253033CRYSTAL GROWING SYSTEM AND METHOD THEREOF - Provided is a system and method for growing crystals. The method includes substantially fully covering a seed crystal in a charge material, using a heat source to melt the charge material, cooling the seed crystal to keep the seed crystal at least partially intact as the charge material melts, allowing at least a portion of the seed crystal to melt into the molten charge material, and continually growing the crystal by reducing the temperature of the heat source, moving the molten charge material and seed crystal from the heat source, and increasing a rate of cooling of the seed crystal.10-20-2011
20110259262SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION - Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (10-27-2011
20120174857METHOD AND APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTALS - The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.07-12-2012
20110179992CRYSTAL GROWTH METHODS AND SYSTEMS - Methods and systems related to an improved controlled heat extraction system for crystal growth, such as sapphire crystal growth are described, including methods and systems for mechanical probe-based and pyrometer-based inspection and automation processes, methods and systems for avoiding fusion of components, methods and systems for purging an inspection window, and methods and systems related to alternative crucible shapes.07-28-2011
20120255485METHOD FOR PURIFYING SILICON - The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots.10-11-2012
20120260849METHOD AND APPARATUS FOR THE PRODUCTION OF CRYSTALLINE SILICON SUBSTRATES - An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.10-18-2012
20120260850METHOD OF PURIFYING SILICON UTILIZING CASCADING PROCESS - The present invention relates to a method of purifying a material using a metallic solvent. The present invention includes a method of purifying silicon utilizing a cascade process. In a cascade process, as the silicon moves through the purification process, it contacts increasingly pure solvent metal that is moving through the process in an opposite direction.10-18-2012
20120090534Solid state thermoelectric power converter - High efficiency conversion of heat energy to electrical energy is achieved using a ring of metallic components and anodically sliced, reduced barriers, high purity n-type and p-type semiconductor wafers. Energy produced by heating one set of fins and cooling another set is extracted from a ring of bismuth telluride based n-type wafers and antimony telluride based p-type wafers using make-before-break control of MOSfet switch banks. Standard AC frequencies and DC output result from rectification of make-before-break high frequency switched very high currents in the ring and a DC to AC converter. Solar energy stored in porcelain fragments extends the time that solar energy can be used as the heat source for the thermoelectric generator device.04-19-2012
20120240844HIGH TEMPERATURE FURNACE INSULATION - A high temperature furnace comprising hot zone insulation having at least one shaped thermocouple assembly port to reduce temperature measurement variability is disclosed. The shaped thermocouple assembly port has an opening in the insulation facing the hot zone that is larger than the opening on the furnace shell side of the insulation. A method for producing a crystalline ingot in a high temperature furnace utilizing insulation having a shaped thermocouple assembly port is also disclosed.09-27-2012
20110303143METHOD OF MANUFACTURING CRYSTALLINE SILICON INGOT - An approach is provided for a method to manufacture a crystalline silicon ingot. The method comprises providing a mold formed for melting and cooling a silicon feedstock by using a directional solidification process, disposing a barrier layer inside the mold, disposing one or more silicon crystal seeds on the barrier layer, loading the silicon feedstock on the silicon crystal seeds, heating the mold to obtain a silicon melt, and cooling the mold by the directional solidification process to solidify the silicon melt into a silicon ingot. The mold is heated until the silicon feedstock is fully melted and the silicon crystal seeds are at least partially melted.12-15-2011
20130152851Bulk Growth Grain Controlled Directional Solidification Device and Method - A solidification system is provided and includes a crucible, heater, insulation, movable insulation, and radiation regulator. The crucible is configured to retain a volume of silicon. The heater is to heat the crucible. The heater being configured to provide sufficient heat to melt the volume of silicon. The insulation is to reduce heat loss from a first portion of the crucible. The movable insulation to regulate heat loss from a second portion of the crucible. The radiation regulator is to regulate radiant heat loss over the second portion of the crucible. The radiation regulator is configured to modulate a size of an opening in the radiation regular through which radiant heat dissipates from.06-20-2013
20110308448Method and Device for Producing Oriented Solidified Blocks Made of Semi-Conductor Material - The invention relates to a method for producing oriented solidified blocks made of semi-conductor material, in addition to a device. Said device comprises a crucible, wherein melt is received, and has an insulation which surrounds the crucible at least from the top and from the side and which is arranged at a distance therefrom at least above the crucible, and at least one heating device which is arranged above said crucible. The region inside the insulation above the crucible is divided by an intermediate cover in a process chamber and a heating chamber is arranged there above, wherein at least one heating element is arranged.12-22-2011
20120055396INTERMEDIATE MATERIALS AND METHODS FOR HIGH-TEMPERATURE APPLICATIONS - A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a compound, such as, a carbide, nitride, oxide, or boride. The method for growing a crystal includes providing an intermediate material between contact surfaces between a shaft and a crucible supported by the shaft prior to melting a charge material in the crucible.03-08-2012
117083000 Having bottom-up crystallization (e.g., VFG, VGF) 5
20090241829CRYSTAL GROWTH SYSTEM AND METHOD FOR LEAD-CONTAINED COMPOSITIONS USING BATCH AUTO-FEEDING - This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).10-01-2009
20090031944Method for producing compound semiconductor epitaxial substrate having PN junction - Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×1002-05-2009
20130133568SYSTEMS AND METHODS FOR CRYSTAL GROWTH - Systems and methods for crystal growth are provided. One method includes producing a lateral thermal profile in a furnace having a crucible therein containing a material for growing a crystal. The lateral thermal profile has three zones, wherein the first and third zones have temperatures above and below a melting point of the material, respectively, and the second zone has a plurality of temperatures with at least one temperature equal to the melting point of the material. The method further includes combining the lateral thermal profile with a vertical thermal gradient produced in the furnace, wherein the vertical thermal gradient causes a point in a bottom of the crucible located in the third zone to be the coldest point in the crucible. The method also includes transferring heat from the first and second zones to the third zone to produce a leading edge of the interface.05-30-2013
20120037066METHODS AND APPARATUS FOR MANUFACTURING MONOCRYSTALLINE CAST SILICON AND MONOCRYSTALLINE CAST SILICON BODIES FOR PHOTOVOLTAICS - Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.02-16-2012
20130199440MONOCRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a monocrystalline semiconductor material includes providing a starting material composed of the semiconductor material, transferring the starting material into a heating zone in which a melt composed of the semiconductor material is fed with the starting material, and lowering the melt from the heating zone and/or raising the heating zone such that, at a lower end portion of the melt, a solidification front forms along which the semiconductor material crystallizes in a desired structure, wherein the starting material composed of the semiconductor material is provided in liquid form and fed into the melt in liquid form.08-08-2013

Patent applications in class Havin growth from molten state (e.g., solution melt)

Patent applications in all subclasses Havin growth from molten state (e.g., solution melt)