| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117068000 | Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) | 27 |
| 20090173274 | PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED THEREON - A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge. | 07-09-2009 |
| 20100107969 | Method for manufacturing group III nitride single crystals - An underlying film | 05-06-2010 |
| 20100031872 | APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MANUFACTURING OF GALLIUM NITRIDE - An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of seed crystals. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
| 20100031873 | BASKET PROCESS AND APPARATUS FOR CRYSTALLINE GALLIUM-CONTAINING NITRIDE - An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
| 20090095212 | Method for manufacturing single crystal of nitride - A seed crystal | 04-16-2009 |
| 20100031874 | PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING NITRIDE USING AN AZIDE MINERALIZER - An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective. | 02-11-2010 |
| 20100058978 | METHOD AND APPARATUS FOR PRODUCING NANOCRYSTALS - The present disclosure describes a method and an apparatus for making nanomaterials. In particular, the present innovation provides an apparatus that can be used to produce nanocrystals and/or nanorods of noble metals. The disclosure also provides methods that can be advantageously used to produce gold nanocrystals/nanorods with aspect ratios higher than 4.0. | 03-11-2010 |
| 20090126622 | Device and method for counter-diffusion crystal growth - The invention relates to a device which enables crystallisation (e.g. of biological macromolecules) by means of counter-diffusion. The inventive device consists of a one-dimensional space, for example a capillary tube, comprising three differently-shaped parts. The invention also relates to a block which comprises several of the aforementioned devices and which can be used to perform crystallisation experiments simultaneously under different conditions. The invention further related to a method of growing crystals by means of counter-diffusion in one-dimensional devices either under terrestrial gravity conditions or under reduced gravity conditions, preferably with the use of the block comprising several of said devices in the latter case. | 05-21-2009 |
| 20110253032 | APPARATUS FOR MANUFACTURING QUANTUM DOT WITH A PLURALITY OF HEATING ZONES AND METHOD FOR MANUFACTURING QUANTUM DOT - Disclosed is a technology of producing quantum dots that are nano-size semiconducting crystals. A quantum dot producing apparatus includes a mixer for mixing precursor solutions, and a heating furnace with a plurality of heating areas providing different temperature conditions to heat the precursor mixture. Between the heating areas, a buffer may be installed which provides a low-temperature condition to prevent addition nucleation. Through this configuration, nucleation is separated from nuclear growth, uniformity in particle size of quantum dots is improved, which enables the mass-production of quantum dots, rather than a quantum dot producing apparatus with a single heating area that provides a constant temperature condition. | 10-20-2011 |
| 20110088613 | PROCESS FOR CONTROLLING THE GROWTH OF A RALOXIFENE HYDROCHLORIDE CRYSTAL - A process is described for controlling the growth of a raloxifene hydrochloride crystal i.e. for the control of raloxifene hydrochloride crystal size, comprising the steps of: a) heating under reflux a mass comprising crystalline raloxifene hydrochloride, methanol and water for a time of about 10 minutes; b) cooling the mass to 30-35° C., and c) checking the crystal size, in which steps a), b) and c) are repeated for a number of cycles n, until the desired crystal size is obtained. | 04-21-2011 |
| 20120204783 | CONTAINER FOR CRYSTALLIZATION, CRYSTALLIZATION APPARATUS, METHOD FOR PRODUCING CRYSTAL, AND SUBSTRATE FOR CRYSTALLIZATION - A container for crystallization of a biopolymer of the invention is provided that includes a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm. There are also provided a crystallization apparatus of a biopolymer, comprising the container for crystallization of a biopolymer, a method for producing a biopolymer crystal, comprising the steps of preparing the container for crystallization of a biopolymer, and making the structure contact with a biopolymer solution, and a substrate for crystallization of a biopolymer, having a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm. | 08-16-2012 |
| 20120167818 | Methods for Controlling Crystal Growth, Crystallization, Structures and Phases in Materials and Systems - This invention relates to novel methods for affecting, controlling and/or directing various crystal formation, structure formation or phase formation/phase change reaction pathways or systems by exposing one or more components in a holoreaction system to at least one spectral energy pattern. In a first aspect of the invention, at least one spectral energy pattern can be applied to a crystallization reaction system. In a second aspect of the invention, at least one spectral energy conditioning pattern can be applied to a conditioning reaction system. The spectral energy conditioning pattern can, for example, be applied at a separate location from the reaction vessel (e.g., in a conditioning reaction vessel) or can be applied in (or to) the reaction vessel, but prior to other (or all) crystallization reaction system participants being introduced into the reaction vessel. | 07-05-2012 |
| 20130145983 | PROCESS FOR PREPARING THE CRYSTALLINE FORM A OF (2-[3-CYANO-4-(2-I-BUTOXY)PHENYL]-4-METHYL-5-THIAZOLE-CARBOXYLIC ACID (FEBUXOSTAT) - The invention relates to a novel process for preparing the crystalline from A of febuxostat by crystallization in a solvent selected from ethyl acetate, isopropyl acetate or ethyl formiate. | 06-13-2013 |
| 117069000 | With a step of measuring, testing, or sensing | 3 |
| 20110203515 | Device for crystal growth at intermediate temperatures using controlled semi-active cooling - A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution. Use of the cell with a variety of chemical solutions, each having the same saturation temperature, facilitates optimization while maintaining a simple, low cost design. | 08-25-2011 |
| 20120090533 | LOW-TEMPERATURE SYNTHESIS OF COLLOIDAL NANOCRYSTALS - Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere. | 04-19-2012 |
| 20130139749 | DEVICE AND METHOD FOR MONITORING CRYSTALLIZATION - A method for crystallizing a substance dissolved in a solvent, including the following steps: introducing a solvent volume containing the substance into a chamber having a preset temperature, humidity, and gas composition, adding a predetermined volume of a precipitant to the solvent volume containing the substance, allowing the solvent to evaporate while simultaneously observing structural changes in the solvent volume containing the substance and the precipitant by means of dynamic light scattering, detecting weight changes and determining the molarities, making an association with the location in the phase diagram on the basis of the DLS measurement and the results of the molarity determination, allowing a predetermined number of crystal nuclei to form by adding solvent or adding precipitant, putting the solvent volume containing the substance and the precipitant into a metastable state by adding solvent and/or protein solution or by allowing the concentration of the dissolved substance to decrease by allowing nucleation cores to form, maintaining the metastable state by adding a predetermined amount of the substance to the solvent volume containing the substance and the precipitant or allowing the solvent to evaporate until at least one crystal of a predetermined size is formed. | 06-06-2013 |
| 117070000 | Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis) | 1 |
| 20080295763 | Apparatus for manufacturing Group III nitride semiconductor and method for manufacturing Group III nitride semiconductor - A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low. | 12-04-2008 |
| 117071000 | At pressure above 1 atmosphere (e.g., hydrothermal processes) | 10 |
| 20100095882 | REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS - The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enables obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device. | 04-22-2010 |
| 20090301387 | HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH - A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. | 12-10-2009 |
| 20090301388 | CAPSULE FOR HIGH PRESSURE PROCESSING AND METHOD OF USE FOR SUPERCRITICAL FLUIDS - An improved capsule for processing materials or growing crystals in supercritical fluids. The capsule is scalable up to very large volumes and is cost effective according to a preferred embodiment. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of 0.2-8 GPa and 400-1500° C., respectively. Of course, there can be other variations, modifications, and alternatives. | 12-10-2009 |
| 20100031875 | PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES - A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective. | 02-11-2010 |
| 20100031876 | PROCESS AND APPARATUS FOR LARGE-SCALE MANUFACTURING OF BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE - A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective. | 02-11-2010 |
| 20090078193 | PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR - A growth apparatus is used having a plurality of crucibles | 03-26-2009 |
| 20120304917 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 12-06-2012 |
| 20120118223 | High Pressure Apparatus and Method for Nitride Crystal Growth - A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. | 05-17-2012 |
| 20120073494 | Process and Apparatus for Large-Scale Manufacturing of Bulk Monocrystalline Gallium-Containing Nitride - A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective. | 03-29-2012 |
| 20120137960 | Process for Preparing Various Morphology NTE Compound ZrW0.5Mo1.5O8 - A process for preparing various morphology NTE compound ZrW | 06-07-2012 |
