Class / Patent application number | Description | Number of patent applications / Date published |
117035000 | With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed) | 23 |
20090133617 | Single Crystal Semiconductor Manufacturing Apparatus and Manufacturing Method - An upper side heater | 05-28-2009 |
20090173272 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 07-09-2009 |
20090211516 | METHOD OF MANUFACTURING SINGLE CRYSTAL WIRE - Disclosed are a single crystal wire and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using the metal crystal as a seed by the Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and forming the cut single crystal into a wire. In the method, the grown metal single crystal is formed into a disc-shaped piece by electric discharge machining. The piece is formed into a single crystal wire by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant or a wire within a high-quality cable making a connection in audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition. | 08-27-2009 |
20090260564 | Method for growing silicon single crystal - A method for growing silicon single crystal by the CZ method, namely by feeding silicon materials for crystal into a crucible to melt the materials, and growing a silicon single crystal on the lower end of the seed crystal, comprises: forming a narrowingly tapered portion with a gradually decreased seed crystal diameter by pulling up the seed crystal inserted in the melt; and providing increased or decreased neck diameter regions in the process of forming a neck in such a manner that each increased neck diameter is provided by increasing the neck diameter, followed by reverting the neck diameter to the original diameter, or alternatively, each decreased neck diameter region is provided by decreasing the neck diameter, followed by reverting the diameter to the original diameter, thereby enabling to reliably eliminate dislocations remaining in the central axial region of the neck in the step of necking. When the neck diameter is increased or decreased at the final stage in the process of forming the neck, dislocations can be eliminated more efficiently. | 10-22-2009 |
20090293802 | Method of growing silicon single crystals - By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices. | 12-03-2009 |
20090293803 | Method of growing silicon single crystals - By providing a length of not less than 100 mm to a tail portion to be formed following the cylindrical body portion in growing silicon single crystals having a cylindrical body portion with a diameter of 450 mm using the CZ method, it becomes possible to inhibit the occurrence of dislocations in the tail portion and thus achieve improvements in yield and productivity. A transverse magnetic field having an intensity of not less than 0.1 T is preferably applied on the occasion of formation of that tail portion. | 12-03-2009 |
20090293804 | Method of shoulder formation in growing silicon single crystals - A method of shoulder formation in growing silicon single crystals by the CZ method which comprises causing the taper angle to vary in at least two stages, desirably three stages or four stages, can inhibit the occurrence of dislocations in the shoulder formation step and thereby improve the yield and increase the productivity. As the number of stages resulting from varying the taper angle is increased, possible disturbances to occur at crystal growth interfaces and incur dislocations can be reduced and, further, when the above shoulder formation method is applied under application of a transverse magnetic field having a predetermined intensity, the occurrence of dislocations can be inhibited and defect-free silicon single crystals suited for the manufacture of wafers can be grown with high production efficiency. Therefore, the method is best suited for the production of large-diameter silicon single crystals with a diameter of 450 mm which are to be applied to manufacturing semiconductor devices. | 12-03-2009 |
20100064965 | DEVICE FOR PULLING A SINGLE CRYSTAL - A device for pulling a single crystal from a melt having a widened portion between an upper and a lower neck portion including a pulling device having a pulling device cable drum configured to wind a pulling cable, the pulling cable configured to pull the single crystal and a supporting device configured to relieve the upper neck portion of a weight of the single crystal. | 03-18-2010 |
20100089309 | METHOD FOR PULLING SILICON SINGLE CRYSTAL - The invention is a method for pulling a silicon single crystal, which is a Czochralski method for growing the silicon single crystal by contacting a seed crystal with a melt and by pulling up, including the steps of: contacting the seed crystal with the melt; forming a necking portion under the seed crystal; and forming the silicon single crystal under the necking portion by increasing a diameter, wherein a pulling rate during forming the necking portion is 2 mm/min or less, and the silicon single crystal with the increased diameter is a boron-doped silicon single crystal having a resistivity of 1.5 mΩ·cm or less at a shoulder portion. Therefore, there can be provided a method of pulling a silicon single crystal without generating defects such as scratches at a wafer surface in the case of processing a boron-doped silicon single crystal ingot with a low resistivity produced by CZ method into a wafer. | 04-15-2010 |
20100107965 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL, METHOD FOR MANUFACTURING THEREOF AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A silica glass crucible for pulling up a silicon single crystal including a wall part and a bottom part is provided with a natural silica glass layer which forms at least one part of a an inner surface of the bottom part, and a synthetic silica glass layer which forms at least an inner surface of the wall part, wherein a concentration of Ca included in the natural silica glass layer is 0.5 ppm or less. | 05-06-2010 |
20100107966 | METHODS FOR PREPARING A MELT OF SILICON POWDER FOR SILICON CRYSTAL GROWTH - Methods for preparing a melt from silicon powder for use in growing a single crystal or polycrystalline silicon ingot in accordance with the Czochralski method that include removal of silicon oxides from the powder; application of a vacuum to remove air and other oxidizing gases; controlling the position of the charge relative to the heater during and after melting of the powder and maintaining the charge above its melting temperature for a period of time to allow oxides to dissolve; and use of a removable spacer between the crucible sidewall and the silicon powder charge to reduce oxides and silicon bridging. | 05-06-2010 |
20100139550 | CRUCIBLE FOR PROCESSING A HIGH-MELTING MATERIAL AND METHOD OF PROCESSING SAID MATERIAL IN SAID CRUCIBLE - The crucible for receiving a melt of a high-melting material has a refractory metal layer that has a melting point of at least 1800° C., which covers a part of the surface of the crucible that would otherwise come in contact with the melt. The refractory metal preferably has a thickness of less than 1 mm. It is either a coating deposited on the surface of the crucible or is a loosely connected foil applied to the surface of the crucible. | 06-10-2010 |
20100162944 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed. | 07-01-2010 |
20110056428 | METHOD OF PRODUCING SINGLE CRYSTAL SILICON - The present invention provides a technique which enables production of single crystal silicon having relatively low resistivity by preventing cell growth during crystal growth from occurring, especially in a case where a relatively large amount of dopant is added to a molten silicon raw material. Specifically, the present invention provides a method of producing single crystal silicon by the Czochralski process, comprising producing single crystal silicon having relatively low resistivity by controlling a height of a solid-liquid interface when the single crystal silicon is pulled up. | 03-10-2011 |
20110253031 | PROCESS FOR PRODUCING SINGLE-CRYSTAL SAPPHIRE - Following steps are implemented: a melting step in which aluminum oxide within a crucible is melted to obtain an aluminum melt; a shoulder-portion formation step in which a seed crystal brought into contact with the aluminum melt is pulled up to thereby form a shoulder portion below the seed crystal; a body-portion formation step in which single-crystal sapphire is pulled up from the melt to form a body portion; and a tail-portion formation step in which a mixed gas including oxygen and an inert gas and having an oxygen concentration set at not less than 1.0 vol % nor more than 5.0 vol % is supplied while the single-crystal sapphire is pulled away from the melt to form a tail portion. Thus, when single-crystal sapphire is obtained by growth from a melt of aluminum oxide, formation of a protrusion in the tail portion of the single-crystal sapphire is more effectively inhibited. | 10-20-2011 |
20110308447 | SAPPHIRE SEED AND METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SAPPHIRE SINGLE CRYSTAL - Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10°, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed. | 12-22-2011 |
20120031323 | Silicon Single Crystal Production Method - Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ≧1000 Gauss, and ≦2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt. | 02-09-2012 |
20120279438 | METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED INCIDENCE OF DISLOCATIONS - Methods for reducing or even eliminating dislocations in Czochralski-grown silicon ingots are disclosed. Generally, the methods involve controlling the growth conditions of the neck prior to formation of the ingot body. | 11-08-2012 |
20130276694 | QUARTZ CRUCIBLE FOR GROWING SILICON SINGLE CRYSTAL, METHOD OF MANUFACTURING QUARTZ CRUCIBLE FOR GROWING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL - A quartz crucible for growing silicon single crystal comprises a crucible body made of a quartz material and a coating layer of a pure silicon which is formed on an inner wall of the crucible body and has purity equivalent to a silicon material that is to be filled into the crucible body. The pure silicon of the coating layer melts together with a silicon material filled in the quartz crucible. | 10-24-2013 |
20130319318 | CRYSTAL HOLDING MECHANISM OF SINGLE CRYSTAL PULLING DEVICE AND METHOD FOR PRODUCING SINGLE CRYSTAL INGOT - The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented. | 12-05-2013 |
20140326174 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - The present invention provides a method for manufacturing a silicon single crystal according to a Czochralski method: bringing a sharp end of a seed crystal into contact with a silicon melt; melting the seed crystal from the end up to a position at which the seed crystal has a predetermined diameter; growing the silicon single crystal without a Dash-Necking process, wherein the seed crystal is melted while a crucible is rotated at a rotational speed of 2 rpm or less, and the rotational speed of the crucible is decelerated to below the rotational speed at the time of the melting within 10 minutes after an end of the melting and a start of the crystal growth. The method avoids reduction in success rate for dislocation-free single crystal growth in manufacture of a heavy, large-diameter ingot and improves the productivity by the dislocation-free seeding method without the necking process. | 11-06-2014 |
20140352606 | SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME - Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible. | 12-04-2014 |
20150136016 | METHOD FOR PRODUCING SiC SINGLE CRYSTAL - Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the Si—C solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature. | 05-21-2015 |