Class / Patent application number | Description | Number of patent applications / Date published |
117030000 | With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) | 20 |
20140299046 | METHOD FOR PRODUCING CRYSTAL - A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step. | 10-09-2014 |
20150040820 | METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON - The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method. | 02-12-2015 |
117031000 | Including a sectioned crucible (e.g., double crucible, baffle) | 4 |
20130233237 | WEIR METHOD FOR IMPROVED SINGLE CRYSTAL GROWTH IN A CONTINUOUS CZOCHRALSKI PROCESS - A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber. | 09-12-2013 |
20140174338 | METHODS TO BOND SILICA PARTS - A method of bonding a first silica part to a second silica part includes coating contacting surfaces of the first and second silica parts with a solution having one of silica and silica precursors. The coated surfaces of the first silica part are placed adjacent to the coated surfaces of the second silica part to form an assembly, and the assembly is heated. | 06-26-2014 |
20140261154 | CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS - A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed. | 09-18-2014 |
20140261155 | CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS - A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is located within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is located inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. | 09-18-2014 |
117032000 | Using a magnetic field | 10 |
20090114147 | SEMICONDUCTOR SINGLE CRYSTAL GROWTH METHOD HAVING IMPROVEMENT IN OXYGEN CONCENTRATION CHARACTERISTICS - The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm. | 05-07-2009 |
20090183670 | APPARATUS FOR MANUFACTURING HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL INGOT AND METHOD USING THE SAME - The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same. The apparatus of the present invention includes a quartz crucible, a heater installed around a side wall of the quartz crucible, a single crystal pulling means for pulling a single crystal from the semiconductor melt received in the quartz crucible, and a magnetic field applying means for forming a Maximum Gauss Plane (MGP) at a location of ML-1000 mm to ML-350 mm based on a Melt Level (ML) of the melt surface, and applying a strong magnetic field of 3000 to 5500 Gauss to an intersection between the MGP and the side wall of the quartz crucible and a weak magnetic field of 1500 to 3000 Gauss below a solid-liquid interface. | 07-23-2009 |
20090249996 | Silicon single crystal pulling method - Until pulling a silicon single crystal is started after silicon raw materials filled in a quartz crucible are melted, the quartz crucible containing silicon melt is rotated while a rotating direction thereof is periodically alternated. Then, the silicon single crystal is pulled up by the CZ method. This pulling method can reduce micro defects, which are caused by bubbles formed in an inner surface of the quartz crucible, and dislocation in the single crystal. | 10-08-2009 |
20090293801 | PRODUCTION METHOD OF SILICON SINGLE CRYSTAL - A method of growing a single crystal, wherein the yield in terms of specific resistance is improved by improving an effective segregation coefficient without affecting other characteristics, is provided: wherein a seed crystal provided to the lower end of a wire cable is immersed in melt in a crucible, a single crystal ingot is grown on the lower end portion of the seed crystal being elevated by pulling up the wire cable while rotating the same, and a horizontal magnetic field intensity to be applied to the silicon melt is changed in accordance with crystal positions along the growing axis direction of the single crystal ingot, so that an effective segregation coefficient of a dopant along the growing axis direction in the single crystal ingot becomes small. | 12-03-2009 |
20090320743 | Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation - A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt. | 12-31-2009 |
20100101485 | Manufacturing method of silicon single crystal - In appropriate setting of magnetic field applied to a molten silicon | 04-29-2010 |
20100126409 | Method of Manufacturing Single Crystal - This invention provides a process for producing a single crystal by a Chokralsky method in which a horizontal magnetic field is applied, characterized in that a single crystal is pulled up so that the radial magnetic field strength gradient ΔBr/ΔRc in such a direction that centers of magnetic field generation coils ( | 05-27-2010 |
20100126410 | APPARATUS AND METHOD FOR PULLING SILICON SINGLE CRYSTAL - A quartz crucible retaining silicon melt is rotated at a prescribed rotating speed, and a silicon single crystal bar pulled from the quartz crucible is rotated at a prescribed rotating speed. A first coil and a second coil having the rotating center of the crucible at the center are arranged in a vertical direction at a prescribed interval, and currents of the same direction are permitted to flow in the first and the second coils to generate a magnetic field. The first coil is arranged outside a chamber, and the second coil is arranged inside the chamber. An intermediate position of the prescribed interval between the first and the second coils is controlled to be at a surface of the silicon melt or below so that a distance between the intermediate position and the surface of the silicon melt is 0 mm or more but not more than 10,000 mm. | 05-27-2010 |
20140174339 | METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL - There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step. | 06-26-2014 |
20140326173 | METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON - Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied. | 11-06-2014 |
117033000 | Replenishing of precursor during growth (e.g., continuous method, zone pulling) | 4 |
20120160156 | Method For Recharging Raw Material Polycrystalline Silicon - A method for recharging raw material polycrystalline silicon which enables large chunks of polycrystalline silicon to be recharged to a CZ ingot growth process while preventing the CZ crucible from being damaged and restricting a decline of the dislocation free rate and the quality of the grown ingot. Polycrystalline silicon chunks are recharged by first forming cushioning layer silicon of smaller chunks. The cushioning layer of polycrystalline silicon chunks are deposited on a surface of the residual silicon melt in a crucible. Subsequently, large-sized polycrystalline silicon chunks are introduced onto the cushioning layer, the cushioning layer cushioning the impact due to dropping of the large-sized polycrystalline silicon chunks. | 06-28-2012 |
20130305982 | PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND DEVICE FOR THE SAME - Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si—C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process. | 11-21-2013 |
20140352605 | METHOD FOR MAKING BARIUM-DOPED CRUCIBLE AND CRUCIBLE MADE THEREBY - Making a barium-doped silica crucible includes forming a crucible by introducing into a rotating crucible mold bulk silica grains to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced into the crucible. Residual heat or additional heat at least partially melts the inner silica grain, allowing the barium-doped silica layer to fuse to the wall of the crucible to form a glossy inner layer. Next, at least a part of the barium-doped silica layer is roughened. Also described are the crucible made thereby as well as silicon ingots made using the crucibles as described herein. | 12-04-2014 |
117034000 | Including significant cooling or heating detail | 1 |
20160024685 | CRYSTAL GROWING SYSTEMS AND METHODS INCLUDING A PASSIVE HEATER - A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone. | 01-28-2016 |