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Having pulling during growth (e.g., Czochralski method, zone drawing)

Subclass of:

117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

117011000 - PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
117014000 With a step of measuring, testing, or sensing (e.g., using TV, photo, or X-ray detector or weight changes) 34
117035000 With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed) 18
117019000 Forming an intended mixture (excluding mixed crystal) (e.g., doped) 17
117023000 Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method) 16
117030000 With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) 9
117028000 Including non-coincident axes of rotation (e.g., relative eccentric) 6
117036000 Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier) 2
20100107967PRODUCTION METHOD OF ZINC OXIDE SINGLE CRYSTAL - A production method of a zinc oxide single crystal, comprising depositing a crystal of zinc oxide on a seed crystal from a mixed melt of zinc oxide and a solvent capable of melting zinc oxide and having a higher average density than zinc oxide in the melt. Preferably, a zinc oxide single crystal is continuously pulled while supplying the same amount of a zinc oxide raw material as that of the pulled zinc oxide. A single crystal excellent in the crystal quality and long in the pulling direction can be continuously produced.05-06-2010
20090044745Process for Producing Zno Single Crystal According to Method of Liquid Phase Growth - A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF02-19-2009
117029000 Passing non-induced electric current through a crystal-liquid interface (e.g., Peltier) 2
20110017125SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS - A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.01-27-2011
20100126408SINGLE CRYSTAL GROWTH METHOD AND SINGLE CRYSTAL PULLING APPARATUS - The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor. This allows for provision of the silicon single crystal growth method and the pulling apparatus therefor, capable of generating appropriately crystallized layers, i.e., devitrification at an inner wall surface of a quartz crucible during a silicon single crystal growth process, and capable of simultaneously controlling a Li concentration of the silicon single crystal, to prevent generating dislocations in the single crystal growth process to thereby improve a yield and productivity of single crystal, while simultaneously restricting variances of thicknesses of those oxide films of sliced wafers which oxide films are to be formed by subsequent thermal oxidation treatments.05-27-2010
Entries
DocumentTitleDate
20120160155COMPOSITE CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON CRYSTAL - The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible 06-28-2012
20110192342Method Of Manufacturing Dislocation-Free Single-Crystal Silicon By Czochralski Method - Dislocation-free single-crystal silicon is manufactured by the Czochralski method, wherein silicon which does not contain particles with an average particle diameter smaller than 250 μm, is used as raw material for melting.08-11-2011
20100116194SILICON CRYSTALLINE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - Provided is a silicon crystalline material, which is manufactured by a CZ method to be used as a material bar for manufacturing a silicon single crystal by an FZ method and has a grasping section for being loaded in a crystal growing furnace employing the FZ method without requiring mechanical processing. A method for manufacturing such silicon crystalline material is also provided. The silicon crystalline material is manufactured by the silicon crystal manufacturing method employing the CZ method and is provided with the grasping section, which is manufactured in a similar way as a shoulder portion, a straight body portion and a tail portion in a silicon crystal growing step employing the CZ method, and is loaded in a single crystal manufacturing apparatus employing the FZ method to grow single crystals. A seed-crystal used in the silicon crystal manufacture employing the CZ method is used as the grasping section. The grasping section is manufactured by temporarily changing crystal growing conditions to form a protruding section or a recessed section on the outer circumference surface of the straight body section or by forming a dent on the shoulder portion of the straight body portion, at the time of manufacturing the silicon crystal by the CZ method.05-13-2010
20100095881ARC DISCHARGE APPARATUS, APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA GLASS CRUCIBLE, AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL - The arc discharge apparatus comprises a plurality of carbon electrodes connected to respective phases of a power supply for heating a silica powder and causing it to fuse by generating arc discharge between the carbon electrodes. All of the carbon electrodes have a density in a range from 1.30 g/cm04-22-2010
20100006022SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME - A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm01-14-2010
20090301386Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface - A method of growing a ribbon crystal provides a crucible containing molten material and passes string through the molten material to grow the ribbon crystal. The method further directs gas flow around the ribbon crystal such that the gas flows down along the ribbon crystal toward the crucible.12-10-2009
20090301385Method for producing silicon wafer - A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (12-10-2009
20130068156METHOD FOR GROWING II-VI SEMICONDUCTOR CRYSTALS AND II-VI SEMICONDUCTOR LAYERS - A method for growing II-VI semiconductor crystals and II-VI semiconductor layers as well as crystals and layers of their ternary or quaternary compounds from the liquid or gas phase is proposed. To this end, the solid starting materials are introduced into a growing chamber for the growing of crystals. Inside the growing chamber, carbon monoxide is supplied by way of reducing agent. At least certain zones of the growing chamber are heated to a temperature at which a first-order phase transition of the starting materials takes place and the starting materials pass into the liquid or gas phase. The starting materials are then cooled down accompanied by the formation of a semiconductor crystal or semiconductor layer, again with a first-order phase transition taking place. The oxygen present in the growing chamber is bound by the carbon monoxide and the formation of an oxide layer at the phase boundary of the growing semiconductor crystal or semiconductor layer is prevented.03-21-2013
20090293799Method for growing silicon single crystal, and silicon wafer - A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.12-03-2009
20120222613SINGLE CRYSTAL SILICON PULLING DEVICE, METHOD FOR PREVENTING CONTAMINATION OF SILICON MELT, AND DEVICE FOR PREVENTING CONTAMINATION OF SILICON MELT - A velocity of Ar gas flow passing through between a lower end of a cylindrical body and a thermal shielding body is influenced by arrangement of a pulling path of single crystal silicon, a cylindrical body, and a thermal shielding body. Accordingly, the velocity of the Ar gas flow passing through between a lower end of the cylindrical body and the thermal shielding body is controlled by adjusting a relative position of the pulling path of the single crystal silicon, the cylindrical body, and the thermal shielding body. As described above, dust falling off to silicon melt can be reduced, thereby preventing deterioration in quality of the single crystal silicon.09-06-2012
20120006254QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON - The invention provides a quartz glass crucible for pulling up single-crystal silicon, and a method for producing single-crystal silicon by using it. The quartz glass crucible is characterized by having a crystallization promoter-containing layer as the inner surface thereof and is characterized in that, when single-crystal silicon is pulled up, macular crystallized regions are formed in the inner surface thereof by the action of the crystallization promoter. In the quartz glass crucible, a crystallized substance is not generated sparsely in the inner surface thereof and therefore does not shed off; outgassing holes are not generated through micro-peeling off of a part of the crystal layer formed in the inner surface thereof, unlike in a case where a crystal layer is formed entirely in the inner surface thereof; molten silicon does not penetrate into the area between the crystal layer and the underlying glass layer through the outgassing holes formed by micro-peeling off; and therefore the quartz glass crucible brings about a high yield.01-12-2012
20110271897GAS-LIFT PUMPS FOR FLOWING AND PURIFYING MOLTEN SILICON - The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.11-10-2011
20090314198DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR GRADE SILICON - This invention relates to a device and method for production of ingots of semiconductor grade silicon, including solar grade silicon, where the presence of oxygen in the hot zone is substantially reduced or eliminated by employing materials void of oxides in the hot zone of the melting and crystallisation process. The method may be employed for any known process including for ciystallising semiconductor grade silicon ingots, including solar grade silicon ingots, such as the Bridgman process, the block-casting process, and the CZ-process for growth of monocrystalline silicon crystals. The invention also relates to devices for carrying out the melting and crystallisation processes, where the materials of the hot zone are void of oxides.12-24-2009
20100031869System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System - The present invention provides a system for manufacturing a silicon single crystal which designs manufacturing conditions under which a value of F/G is controlled to fall within a predetermined range in order that a crystal quality of a silicon single crystal manufactured by a pulling apparatus using the CZ method falls within a target standard, including, automatically, at least: means 02-11-2010
20090288591Crystal Growth Apparatus for Solar Cell Manufacturing - The present invention(s) provide an apparatus for forming a rod, which is also sometimes referred to as an ingot or boule, which can be subsequently diced to form multiple substrates that may be utilized to form a solar cell device. The substrate may be a monocrystalline, or polycrystalline, substrate made by use of a CZ type crystal pulling technology. In one embodiment, the crystal pulling apparatus is used to form a substrate used form a solar cell device. In one embodiment, a feed material is delivered to a crucible using a vibratory feeder assembly and is heated using a novel heater assembly to allow a CZ type crystal pulling process to be performed.11-26-2009
20090090294METHOD AND APPARATUS FOR MANUFACTURING AN ULTRA LOW DEFECT SEMICONDUCTOR SINGLE CRYSTALLINE INGOT - The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.04-09-2009
20090120352Semiconductor Single Crystal Manufacturing Device and Manufacturing Method - In order to provide a semiconductor single crystal manufacturing device and a manufacturing method using a CZ method wherein the resistivity and oxygen concentration of a silicon single crystal can be controlled and wherein a single crystal yield can be improved, in the present invention, there is provided a wall 05-14-2009
20080210155SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT - A silicon single crystal which has been produced using the Czochralski method has a <113> orientation.09-04-2008
20090038537METHOD OF PULLING UP SILICON SINGLE CRYSTAL - A method of pulling up a silicon single crystal is provided in which a variation rate of a neck diameter is controlled to be within a predetermined range, and a dislocation in a neck is eliminated. When pulling up the silicon single crystal, a single crystal with a predetermined crystal diameter is grown by bringing a seed crystal into contact with a material silicon melt, pulling up the seed crystal, growing the neck, and then increasing a diameter. The above-mentioned neck diameter is increased and decreased to grow the neck, during which a neck diameter variation rate is greater than or equal to 0.05 and less than 0.5, assuming that a value obtained in such a manner that a neck diameter difference (A−B) between adjoining inflection points is divided by a neck length L between the above-mentioned inflection points P02-12-2009
20090165702SELF-COATED SINGLE CRYSTAL, AND PRODUCTION APPARATUS AND PROCESS THEREFOR - It is an object of the present invention to provide a self-coated single crystal that without any special step conducted after crystal growth, has its circumference coated with a layer of different properties. A self-coated single crystal according to the present invention is characterized in that in operations comprising melting crystal materials for a core and a clad in a single crucible and carrying out growth of a single crystal through a pulling up method or a pulling down method, a grown single crystal in an as-growth condition has its circumference self-coated with a clad whose refractive index is lower than that of the core.07-02-2009
20090165700INNER CRYSTALLIZATION CRUCIBLE AND PULLING METHOD USING THE CRUCIBLE - A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 μm from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1 mm from the inner surface of the crucible. The concentration of OH groups in the surface glass layer is 90 ppm or less, and the concentration of OH groups in the glass layer is equal to or more than 90 ppm and equal to or less than 200 ppm. The bubble content in the glass layer is 0.1% or less.07-02-2009
20090165701VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON - A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range07-02-2009
20080289568QUARTZ GLASS CRUCIBLE, PROCESS FOR PRODUCING THE SAME, AND USE - A crucible has a structure where a layer containing a crystallization accelerating component such as aluminum or the like (a crystallization accelerating layer) is inserted inside a quartz glass layer of a crucible straight body part excepting a crucible bottom part. The crucible does not deform and fall inwardly at the straight body part since a part containing a crystallization accelerating component advances to crystallize so as to increase strength at a high temperature when the crucible is used in pulling up silicon single crystal. Therefore, a single crystallization rate can be increased. Further, since the crystallization accelerating layer is inserted inside the quartz glass layer, the crystallization accelerating component, such as aluminum or barium, does not contact with silicon melt or a carbon susceptor, contamination by eluting these metals does not occurs. Further, since the crystallization accelerating layer is not provided at the crucible bottom part, there is no danger to crack due to thermal distortion at a time of pulling up silicon single crystal and melt leakage does not occur.11-27-2008
20080308035Removable Thermal Control for Ribbon Crystal Pulling Furnaces - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible.12-18-2008
20080271665Method for producing group III Nitride-based compound semiconductor - In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 11-06-2008
20090139444CZOCHRALSKI APPARATUS FOR GROWING CRYSTALS AND PURIFICATION METHOD OF WASTE SALTS USING THE SAME - Disclosed are a czochralski apparatus for growing crystals and a purification method of waste salts using the same. More particularly, the present invention provides a czochralski apparatus for growing crystals comprising screw thread for fixing salt crystals mounted on a pulling bar of the apparatus in order to prevent desorption of crystals caused by load thereof during a crystal growing process without requiring alternative seed crystals and, in addition, a method for purification of waste salts, which can isolate impurities from molten waste salts using a czochralski crystal growing process without alternative adsorption medium, does not generate secondary wastes and may continuously purify the waste salts.06-04-2009
20080264331Manufacturing Method and Manufacturing Apparatus of a Group III Nitride Crystal - A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.10-30-2008
20100162943SILICA GLASS CRUCIBLE AND METHOD OF PULLING SILICON SINGLE CYRSAL WITH SILICA GLASS CRUCIBLE - In a silica glass crucible used for pulling a silicon crystal, a circumferential maximum tolerance of each of bubble content, wall thickness and transmission as measured over a full circumference of the crucible at a same height position is not more than 6%.07-01-2010
20120192786SINGLE-CRYSTAL MANUFACTURING APPARATUS AND SINGLE-CRYSTAL MANUFACTURING METHOD - A single-crystal manufacturing apparatus according to the Czochralski method, including: a crucible that contains a raw material; a main chamber configured to accommodate a heater for heating and melting the raw material; and a pulling chamber configured to pull and accommodate a grown single crystal, the pulling chamber being continuously provided above the main chamber; an inner shield provided between the heater and the main chamber and for insulating heat radiated from the heater, and a supporting member for supporting the inner shield from below. The inner shield is supported at three or more supporting points contacting the supporting member, and a lower end of the inner shield except at the supporting points does not contact the supporting member.08-02-2012
20100199909SYSTEMS AND METHODS FOR RECYCLING SEMICONDUCTOR MATERIAL REMOVED FROM A RAW SEMICONDUCTOR BOULE - Methods of recycling excess semiconductor material removed from an unshaped semiconductor boule are disclosed. Excess semiconductor material is cut from an semiconductor unshaped boule thereby generating a shaped semiconductor boule. The excess semiconductor material is removed in the form of large pieces that can easily be cleaned and retrieved for reuse.08-12-2010
20110126757Method For Pulling A Single Crystal Composed Of Silicon With A Section Having A Diameter That Remains Constant - Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate v06-02-2011
20100192838Methods for Manufacturing Monocrystalline or Near-Monocrystalline Cast Materials - Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.08-05-2010
20100180815CRUCIBLE AND METHOD FOR PULLING A SINGLE CRYSTAL - A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.07-22-2010
20110000423Method for producing fluoride crystal - Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.01-06-2011
20110061587METHOD OF PRODUCING PRETREATED METAL FLUORIDES AND FLUORIDE CRYSTALS - [Problem] To provide a method of producing a pretreated metal fluoride containing impurities such as oxygen in decreased amounts and a fluoride crystal containing impurities such as oxygen in decreased amounts and having excellent optical properties such as transparency.03-17-2011
20110048315METHOD AND APPARATUS FOR VENTING GAS BETWEEN A CRUCIBLE AND A SUSCEPTOR - During a CZ or similar process, a silica crucible is held in a graphite or similar susceptor while being heated to above between about 1580 and 1620 degrees C. Vents or grooves formed in at least one of the outer surface of the crucible and the inner surface of the susceptor permit gasses to vent upwardly and out from between the crucible and susceptor. This permits gas evolved from the crucible as a result of the heat to be vented rather than expanding between the crucible and susceptor thereby deforming the crucible.03-03-2011
20100319610SINGLE-CRYSTAL MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTAL - According to the present invention, there is provided a single-crystal manufacturing apparatus based on Czochralski method, comprising at least: a main chamber configured to accommodate hot zone components including a crucible; and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt contained in the crucible, wherein the apparatus further comprises: a cooling pipe which is arranged above the crucible and in which a cooling medium is circulated; and a moving mechanism that moves up and down the cooling pipe, and the hot zone components are cooled down by utilizing the moving mechanism to move down the cooling pipe toward the crucible after growth of the single crystal, and a method for manufacturing a single crystal is also provided. As a result, there can be provided the single crystal manufacturing apparatus and the method for manufacturing a single crystal that enable cooling the hot zone components in the main chamber in a short time after pulling a single crystal having a large diameter, e.g., approximately 200 mm or above.12-23-2010
20100319608SILICA GLASS CRUCIBLE, METHOD OF MANUFACTURING THE SAME AND PULLING METHOD - A silica glass crucible including an outer surface layer formed of a bubble-containing silica glass layer and an inner surface layer formed of a silica glass layer whose bubbles are invisible to the naked eye, so as to sufficiently disperse heat from the external radiation thereby preventing temperature irregularity in the silicon melt, and at the same time, exhibit excellent heat conductivity thereby giving a uniformly heated state over a wide range in the entire crucible without taking a long time for increasing the temperature to form a silicon melt, wherein an intermediate layer is interposed between the outer surface layer and the inner surface layer while in the intermediate layer, a bubble-containing silica glass layer (bubble-containing layer) including bubbles with a diameter of 100 μm or smaller by 0.1% or more in the volumetric bubble content and a silica glass layer (transparent glass layer) including the bubbles by 0.05% or less in the volumetric bubble content are laminated.12-23-2010
20110259259METHOD FOR MANUFACTURING A SILICON WAFER - Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.10-27-2011
20090084308Easily crystallizable vitreous silica member, vitreous silica crucible and method for manufacturing single-crystal silicon - A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible.04-02-2009
20120037065CRUCIBLE FOR SILICON SUITABLE FOR PRODUCING SEMICONDUCTORS - A crucible for producing a silicon suitable for producing a semiconductor includes a plurality of components and at least one unclosed joint gap.02-16-2012
20110315071VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can restrain deterioration of crystallinity of a silicon ingot in multi-pulling. Provided is a vitreous silica crucible for pulling a silicon single crystal, the crucible has a wall having, from an inner surface toward an outer surface of the crucible, a synthetic vitreous silica layer, a natural vitreous silica layer, an impurity-containing vitreous silica layer and a natural vitreous silica layer.12-29-2011
20100050930Crucible For A Crystal Pulling Apparatus - A single crystal pull apparatus has a multilayer crucible wherein the crucible has an outer crucible, an insertable layer intimately fitted thereon, and a wire frame positioned between the insertable layer and an inner crucible. The insertable layer, wire frame and inner crucible are preferably composed of platinum. Furthermore the insertable layers have thin walls and the frame has a small diameter such that they can be easily reshaped after any deformation occurring as a result of the single crystal growth process.03-04-2010
20100139549Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single Crystal - The present invention is a quartz glass crucible 06-10-2010
20100095880Arc melting high-purity carbon electrode and application thereof - An arc melting high-purity carbon electrode is capable of forming stable arc at the time of arc discharge, and it is possible to produce a vitreous silica crucible with good properties, which does not cause local lack of the electrode and does not create black foreign materials or concave portions on the inner surface of the crucible. The arc melting high-purity carbon electrode is a carbon electrode used to heat and melt silica powder by arc discharge, in which the density of the carbon electrode is equal to or more than 1.60 g/cm04-22-2010
20100288185Method And An Apparatus For Growing A Silicon Single Crystal From A Melt - Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction.11-18-2010
201201321312-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR - The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.05-31-2012
20120160154Method For Producing Silicon Single Crystal Ingot - An ingot production method which makes it possible to greatly restrict formation of pinholes or substantially prevent them avoids the use of substantial amounts of small-sized polycrystalline silicon chunks of polycrystalline silicon chunks, only middle-sized polycrystalline silicon chunks and large-sized polycrystalline silicon chunks. In the step of filling polycrystalline silicon, the polycrystalline silicon chunks are randomly supplied into the crucible.06-28-2012
20100050929Coil Arrangement for Crystal Pulling and Method of Forming a Crystal - Coil arrangement for crystal pulling comprising two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid the crystal is pulled from. Method of forming a crystal comprising the steps of providing a fluid the crystal is pulled from, and providing two coils, wherein at least one of said two coils is arranged in a way to substantially surround the crystal and/or the fluid, and pulling the crystal from the fluid.03-04-2010
20080302294Single Crystal Manufacturing Method - Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to pull the seed crystal. During pulling, a horizontal magnetic field positioning device applies a magnetic field in the horizontal direction to the inside of the silicon melt, fixing the magnetic field axis at a constant position from the liquid surface of the melt. Positional adjustment of the vertical position of the horizontal magnetic field is performed in advance by a magnetic field position adjusting device, and the magnetic field axis of the applied field is fixed at a constant distance lower than the liquid surface of the melt by more than 50 mm and at the same level or higher than a depth L from the melt surface at the point of tail-in.12-11-2008
20100319609VITREOUS SILICA CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND USE THEREOF - A vitreous silica crucible for pulling single-crystal silicon, in which the vibration of a melt surface at the initial stage of the pulling of single-crystal silicon can be suppressed, a shoulder portion of single-crystal silicon can be stably formed, and a high yield of single-crystal silicon can be achieved.12-23-2010
20120260845POLYSILICON SYSTEM - A polysilicon system comprises polysilicon in at least three form-factors, or shapes, providing for an enhanced loading efficiency of a mold or crucible. The system is used in processes to manufacture multi-crystalline or single crystal silicon.10-18-2012
20110214604UPPER HEATER FOR USE IN PRODUCTION OF SINGLE CRYSTAL, SINGLE CRYSTAL PRODUCTION EQUIPMENT, AND METHOD FOR PRODUCING SINGLE CRYSTAL - The present invention is directed to an upper heater for use in the production of a single crystal, the upper heater in which at least electrodes to which a current is supplied and a heat generating section which generates heat by resistance heating are provided, the upper heater being used when a single crystal is produced by Czochralski method, the upper heater being placed above a graphite heater which is placed so as to surround a crucible containing silicon melt, wherein the heat generating section is ring-shaped and is placed so as to surround the crucible, and has slits formed from the inside and the outside of the heat generating section in a horizontal direction. As a result, an upper heater for use in the production of a single crystal, the upper heater which can control a crystal defect of the single crystal efficiently, and single crystal production equipment and a method for producing a single crystal, the equipment and the method which can produce a high-quality single crystal by controlling a crystal defect efficiently and improving the oxygen concentration controllability by using the upper heater for use in the production of a single crystal, are provided.09-08-2011
20110214603METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL - The present invention provides a method of manufacturing a silicon single crystal which can more greatly suppress a pinhole formation in the silicon single crystal, which is a method of manufacturing a silicon single crystal by the Czochralski method in which a silicon material to be silicon melt is melted in a furnace body and then a silicon single crystal is pulled up. After melting the silicon material and before the start of pulling up the silicon single crystal, a heater power is set to be higher than that during the step of pulling up the silicon single crystal, and an internal furnace pressure is set as 30 Torr or less, which is lower than that during the step of pulling up the silicon single crystal, the power and pressure being maintained for a predetermined time, and then the step of pulling up the silicon single crystal is carried out.09-08-2011
20100229785APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL - A single-crystal manufacturing apparatus comprises a chamber, a crucible in the chamber, a heater arranged around the crucible, a lifting mechanism for lifting a seed crystal, and a guide passage for the seed crystal and a grown single crystal. In the single-crystal manufacturing apparatus, a material polycrystal contained the crucible is melted by a heater, and the seed crystal is made to contact the molten polycrystal and is lifted. The single-crystal manufacturing apparatus comprises a cylindrical quartz tube having a curved bottom portion, and a dome-shaped quartz plate. The curved bottom portion faces the crucible from the upper portion of the chamber through the guide passage. The quartz plate is arranged to enclose the quartz tube. The quartz tube has a reflecting structure for reflecting a heat ray from at least its bottom portion whereas the quartz plate has a reflecting structure for reflecting the heat ray to the crucible.09-16-2010
20120285369METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTALS COMPOSED OF SEMICONDUCTOR MATERIAL - A method for producing a single crystal of semiconductor material having material properties of a zone-pulled single crystal includes providing a vessel transmissive to high frequency magnetic fields and having a granulate of a granular semiconductor material disposed therein and a first conductor disposed externally thereto. A high frequency current is supplied to a planar inductor disposed above the vessel, the planar inductor having a turn and a slit as a current supply so as to produce an open melt lake on the granulate by a temperature field at a surface of the granulate produced by thermal power of the planar inductor and a heating action of the first inductor, the melt lake being embedded in unmelted material of the granular semiconductor material and not being in contact with a wall of the vessel. A single crystal is pulled form the melt lake of the semiconductor material upwards.11-15-2012
20130112134Method and Systems for Characterization and Production of High Quality Silicon - Computer controlled quality control methods for manufacturing high purity polycrystalline granules are introduced. Polycrystalline silicon granules are sampled and converted into single crystal specimen in computer controlled system, eliminating the need of human operator in controlling the processing parameters. Single crystal silicon test samples, then characterized by FTIR and other standard analysis, are therefore more representative of the starting granular silicon.05-09-2013
20130125810APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL - The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.05-23-2013
20130174777QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL - Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.07-11-2013
20110271898SINGLE-CRYSTAL MANUFACTURING METHOD - The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of bulling the single crystal having a large diameter, in manufacture of the single crystal.11-10-2011
20120017824VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING SILICON INGOT - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible in multi-pulling. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, comprising a mineralizer on an inner surface of the crucible, wherein the mineralizer contains at least one atoms selected from the group consisting of Ca, Sr, Ba, Ra, Ti, Zr, Cr, Mo, Fe, Co, Ni, Cu, and Ag, and the concentration of the mineralizer on the inner surface is 1.0×1001-26-2012
20130206056METHODS OF PRODUCING CRYSTALLINE SEMICONDUCTOR MATERIALS - A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties.08-15-2013

Patent applications in class Having pulling during growth (e.g., Czochralski method, zone drawing)

Patent applications in all subclasses Having pulling during growth (e.g., Czochralski method, zone drawing)