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117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

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Class / Patent application numberDescriptionNumber of patent applications / Date published
117013000 Having pulling during growth (e.g., Czochralski method, zone drawing) 166
117073000 Havin growth from molten state (e.g., solution melt) 89
117054000 Liquid phase epitaxial growth (LPE) 44
117068000 Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) 30
117037000 Having moving solid-liquid-solid region 10
117012000 Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method) 1
20090020068METHOD OF MANUFACTURING OF SUBSTRATE - A method of manufacturing a substrate is provided for readily processing a substrate in the presence of a supercritical fluid in a deposition step, an etching step, a resist peeling step and the like. The method of manufacturing a substrate of the present invention is a method of manufacturing a substrate for processing a surface of the substrate by filling a liquid fluid in a reaction chamber in which the substrate is placed, and reacting a precursor solved in the liquid fluid in the vicinity of the surface of the substrate, wherein the substrate is placed on a ceiling of the reaction chamber with the surface of the substrate oriented downward.01-22-2009
20090266294METHOD AND DEVICE FOR FEEDING ARSENIC DOPANT INTO A SILICON CRYSTAL GROWING APPARATUS - A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.10-29-2009
20090050050DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS - Single-crystal materials are fabricated from a melt at temperatures below their melting points.02-26-2009
20110100291PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES - A method of operating a high pressure system for growth of gallium nitride containing materials. The method comprises providing a high pressure apparatus comprising a growth region and feedstock region. The high pressure reactor comprises a high pressure enclosure and is configured within a primary containment structure. The method includes operating an exhaust system coupled to the primary containment structure. The exhaust system is configured to remove ammonia gas derived from at least 0.3 liters of ammonia liquid.05-05-2011
20090084307One-Pot Synthesis of High-Quality Metal Chalcogenide Nanocrystals Without Precursor Injection - A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.04-02-2009
20120160153APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL - To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.06-28-2012