Class / Patent application number | Description | Number of patent applications / Date published |
117004000 | PROCESSES OF GROWTH FROM SOLID OR GEL STATE (E.G., SOLID PHASE RECRYSTALLIZATION) | 28 |
20140102355 | PRODUCING POLARIZATION-MODULATING OPTICAL ELEMENT FOR MICROLITHOGRAPHY SYSTEM - Methods of producing a polarization-modulating element that modulates a polarization state of incident light into a predetermined polarization state, the polarization-modulating element being used with an illumination optical apparatus, include preparing an optical material having optical activity, and providing the optical material with a circumferentially varying thickness profile and a central region that is an aperture having no optical activity. The thickness profile is set so that light in a linearly polarized state having a direction of polarization substantially along a single direction, is transformed into light in an azimuthal polarization state having a direction of polarization substantially along a circumferential direction or into light in a radially polarized state having a direction of polarization substantially along the radial direction. | 04-17-2014 |
117005000 | Organic product | 2 |
20110139063 | FORMATION OF A THIN FILM OF MOLECULAR ORGANIC SEMICONDUCTOR MATERIAL - The invention relates to a method for forming a thin film of molecular organic semiconductor material (OSCM), said film being intended to be integrated into a device for applications in electronics or optoelectronics, which includes the following steps: step (c) of supplying a defined quantity of the molecular OSCM in the form of a melt to the surface of a substrate so as to form a thin film; and a step (d) of cooling according to a defined temperature profile in order to solidify the thin film, characterized in that the temperature of the substrate surface is equal to or above the melting point of the molecular OSCM at the moment of implementing step (a) and in that the temperature profile of step (b) comprises: a first part corresponding to a sufficiently slow controlled cooling of the molecular OSCM down to a temperature close to the crystallization temperature of the molecular OSCM, so as to cause only a single seed to appear in the thin film in melt form; and a second part corresponding to controlled cooling so that at least one single-crystal domain grows from this seed, the thin film finally obtained being a single-crystal film. The invention further relates to a method of forming an organic field-effect transistor. | 06-16-2011 |
20140190396 | LOOSE PACKED PHOXONIC CRYSTALS AND METHODS OF FORMATION - Processes of forming an irreversibly loose packed structure of particulate material useful as a photonic or phononic crystal are provided. Matrix material is infilled between particles and extends above the particles to form a particulate free matrix layer. Removing the matrix layer causes deformation of or exposes the spacing between the particles. The spaces are infilled by additional matrix material that when cured produces a supported and irreversibly loose packed crystalline structure of particles producing differing bandgaps and transmissive properties relative to the original structure. The processes provided allow for economical tuning of the transmissive properties of photonic or phononic crystals. | 07-10-2014 |
117006000 | At pressure above 1 atmosphere | 2 |
20120192785 | Multilayer structure for a diamond growth and a method of providing the same - A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer. | 08-02-2012 |
20130333611 | LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE - A lattice matching layer for use in a multilayer substrate structure comprises a lattice matching layer. The lattice matching layer includes a first chemical element and a second chemical element. Each of the first and second chemical elements has a hexagonal close-packed structure at room temperature that transforms to a body-centered cubic structure at an α-β phase transition temperature higher than the room temperature. The hexagonal close-packed structure of the first chemical element has a first lattice parameter. The hexagonal close-packed structure of the second chemical element has a second lattice parameter. The second chemical element is miscible with the first chemical element to form an alloy with a hexagonal close-packed structure at the room temperature. A lattice constant of the alloy is approximately equal to a lattice constant of a member of group III-V compound semiconductors. | 12-19-2013 |
117007000 | Using heat (e.g., strain annealing) | 23 |
20090038536 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, OPTICAL MODULATION ELEMENT, AND DISPLAY APPARATUS - A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution. | 02-12-2009 |
20090120351 | Method for Growing Single Crystals of Metals - A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal. | 05-14-2009 |
20090211514 | Single crystal conversion process - A solid state method for converting polycrystalline alumina components to single crystal or sapphire. The single crystal conversion method includes sintering a pre-fired polycrystalline alumina component doped with a magnesia sintering aid in an atmosphere containing a gas mixture of hydrogen and an inert gas, such as nitrogen in one embodiment. A sintering temperature is selected that preferably depends on the percentage of hydrogen selected. The component is held at the sintering temperature for a time sufficient to convert the polycrystalline component into a component formed of a single crystal. In one embodiment, the sintering temperature may be between at least about 1600° C. and less than 2050° C., and the amount of hydrogen in the sintering atmosphere may be between about 4% to about 10%. The method forms a wetting type intergranular film associated with the nucleation and growth of a single abnormal grain in the polycrystalline alumina component. | 08-27-2009 |
20090211515 | METHOD FOR SOLID-STATE SINGLE CRYSTAL GROWTH - By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility. | 08-27-2009 |
20120312227 | MULTI-HEATER SYSTEM FOR GROWING HIGH QUALITY DIAMOND AND A METHOD FOR GROWING THE SAME - Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface. | 12-13-2012 |
20130220211 | CRYSTAL TO CRYSTAL OXYGEN EXTRACTION - Compositions made by metallothermal reduction from crystalline materials and methods of producing such compositions are provided. The compositions have novel crystalline structures in the form of three-dimensional scaffolds. Additionally, the compositions possess unusual properties that indicate possible applications in numerous applications. | 08-29-2013 |
20140196658 | INTEGRATED CHARGE PRODUCTION ARCHITECTURE - The present invention relates to fabrication and application of compositions, devices, methods and systems for utilizing radiation more efficiently as compared to known systems. A synthesis method provides deposition of titania on a substrate without the use of an electrochemical reaction. An integrated architecture formed by the method of the present invention is comprised of vertically-oriented, one-dimensional, monocrystalline, n-type anatase nanowires in communication with a common transparent conductive substrate, and which are intercalated with a consortia of p-type quantum dots tuned for absorption of infrared and other radiation. | 07-17-2014 |
20150299893 | Multi-Stage Ramp-Up Annealing For Frequency-Conversion Crystals - A frequency-conversion crystal annealing process includes a first ramp-up period (e.g., increasing the crystal's temperature to a first set point in the range of 100° C. to 150° C. over about 2 hours), a first fixed temperature period (e.g., maintaining at the first set point for 10 to 20 hours), a second ramp-up period (e.g., increasing from the first set point to a second set point above 150° C. over about 1 hour or more), a second fixed period (e.g., maintaining at the second set point for 48 to 300 hours), and then a temperature ramp-down period (e.g., decreasing from the second set point to room temperature over about 3 hours). Transitions from the first and second fixed temperature periods are optionally determined by —OH bonds absorption levels that are measured using Fourier transform infrared spectroscopy, e.g., by monitoring the absorption of —OH bonds (including H | 10-22-2015 |
20160068991 | MIXED OXIDE CONTAINING A LITHIUM MANGANESE SPINEL AND PROCESS FOR ITS PREPARATION - A mixed oxide containing | 03-10-2016 |
20160087277 | PREPARATION METHOD OF BATTERY COMPOSITE MATERIAL AND PRECURSOR THEREOF - A preparation method of a battery composite material includes steps of providing phosphoric acid, a first metal source, a second metal source and water, processing a reaction of the first metal source, the second metal source, the phosphoric acid and the water to produce a first product, calcining the first product to produce a first precursor or a second precursor, among which each of the first precursor and the second precursor is a solid-solution containing first metal and second metal, and processing a reaction of the first precursor or the second precursor, and a first reactant to obtain a reaction mixture, and then calcining the reaction mixture to produce the battery composite material. As a result, the battery product has two stable charging and discharging platforms, such that the present invention achieves the advantages of enhancing the stability and the electric performance. | 03-24-2016 |
20160130718 | SILICON WAFER HEAT TREATMENT METHOD - A silicon wafer heat treatment method includes: placing a silicon wafer on a SiC jig and into a heat treatment furnace; performing heat treatment on the silicon wafer in the heat treatment furnace in a first non-oxidizing atmosphere; reducing the temperature; and carrying the silicon wafer out of the heat treatment furnace. In the heat reduction step, after the temperature is reduced to the temperature at which the silicon wafer can be carried out of the heat treatment furnace, the first non-oxidizing atmosphere is switched to an atmosphere containing oxygen, an oxide film having a thickness of 1 to 10 nm is formed on the surface of the SiC jig in the atmosphere containing oxygen, and the atmosphere containing oxygen is then switched to a second non-oxidizing atmosphere. A silicon wafer heat treatment method can prevent carbon contamination from a jig and an environment during a heat treatment process. | 05-12-2016 |
117008000 | Of amorphous precursor | 6 |
20110220011 | MANUFACTURING METHOD OF GALLIUM OXIDE SINGLE CRYSTAL - A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide. | 09-15-2011 |
20120160152 | METHOD FOR CRYSTALLIZING A LAYER - The transfer of the structure of a crystal ( | 06-28-2012 |
20140069323 | Method for Forming a Metal Chalcogenide - A method for forming a metal chalcogenide includes: (a) providing a preliminary precursor solution including a first precursor for an elemental metal of Ag, Au, Al, In, Ga, or Tl, a second precursor for a chalcogen element of Se, S, or Te, and a liquid solvent; (b) heating the preliminary precursor solution under an inert ambient, such that the first precursor reacts with the second precursor to obtain a metal chalcogenide precursor that is in an amorphous phase; (c) removing the liquid solvent from the metal chalcogenide precursor; and (d) heating the metal chalcogenide precursor under a hydrogen-containing gas pressure so as to convert the metal chalcogenide precursor into a single crystal phase metal chalcogenide. | 03-13-2014 |
20140283734 | MICROWAVE HEAT TREATMENT METHOD - The present disclosure relates to a heat treatment method of performing a single crystallization of amorphous silicon formed on a substrate to be processed by irradiating the substrate with a microwave. The heat treatment method includes: irradiating the substrate with a microwave to increase a temperature of the substrate to a first temperature such that the amorphous silicon formed on the substrate becomes a single crystal at an interface between the substrate and the amorphous silicon and a nucleation does not occur in a region except the interface; irradiating the substrate with a microwave to heat the substrate at the first temperature for a predetermined period; irradiating the substrate with the microwave to increase the first temperature to a second temperature, which is higher than the first temperature; and irradiating the substrate with the microwave to heat the substrate at the second temperature. | 09-25-2014 |
20150059640 | METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURING COLUMN III-V GROWTH INTO DIELECTRIC WINDOWS - A method for depositing a column III-V material over a selected portion of a substrate through a window formed in a dielectric layer disposed over the selected portion of the substrate. The method includes forming a single crystal layer or polycrystalline layer over a field region of the dielectric layer adjacent to the window; and, growing, by MOCVD, column III-V material over the single crystal layer or polycrystalline layer and through the window over the selected portion of the substrate. | 03-05-2015 |
20160068990 | METHODS OF FORMING PEROVSKITE FILMS - This disclosure provides methods for forming a perovskite film. Exemplary methods can include the steps of forming an amorphous layer on a substrate disposed in a reaction chamber, covering at least a portion of the amorphous layer with a barrier that at least partially prevents the first metal, the second metal, oxygen atoms, or a combination thereof from being released during annealing and annealing the amorphous layer to form a perovskite film. Formation of the amorphous layer on the substrate disposed in a reaction chamber may be effected by introducing a first compound comprising a first metal; introducing an oxidizing agent; and introducing a second compound comprising a second metal. | 03-10-2016 |
117009000 | Epitaxy formation | 6 |
20090007840 | Apparatus and Method for Growing a Crystal and Heating an Annular Channel Circumscribing the Crystal - An apparatus and method is provided for pulling a crystal seed from melt for growing a single crystal. The method includes the steps of providing a crucible and providing within the crucible an outer container, and providing coaxially within the outer container an inner container. A protruding portion of the inner container protrudes downward relative to the outer container for containing melt, the inner and outer containers defining an annular channel therebetween which has a bottom wall and contains introduced charge feed. The method further includes the steps of providing for allowing fluid communication between the annular channel and the inner container, delivering charge feed into the annular channel, and generating heat from within the annular channel for preventing the formation of a condensate of the charge feed within the annular channel. | 01-08-2009 |
20090283028 | NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS - Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 | 11-19-2009 |
20110088612 | METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A method for producing a silicon carbide single crystal including a steps of, loading a sublimation-raw material into a reaction vessel of a production apparatus for a silicon carbide single crystal, and placing a seed crystal for a silicon carbide single crystal in such a manner that the seed crystal substantially faces the sublimation-raw material, and re-crystallizing the sublimation-raw material sublimated by heating on a surface of the seed crystal to grow a silicon carbide single crystal, the method further including applying a thermosetting material containing silicon component to a back surface of the seed crystal before the placing the seed crystal in the reaction vessel of the production apparatus for the silicon carbide single crystal. | 04-21-2011 |
20130263771 | CRYSTAL PRODUCTION METHOD - A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide. | 10-10-2013 |
20140338586 | METHOD FOR PRODUCING ZINC OXIDE SINGLE CRYSTAL - The present invention provides a method capable of stably producing a zinc oxide single crystal in which a large amount of dopant forms a solid solution at a high level of productivity and reproducibility without using a harmful substance. The method of the present invention comprises providing a raw material powder that is mainly composed of zinc oxide, comprises at least one dopant element selected from B, Al, Ga, In, C, F, Cl, Br, I, H, Li, Na, K, N, P, As, Cu, and Ag in a total amount of 0.01 to 1 at %, and is substantially free of a crystal phase other than zinc oxide, and injecting the raw material powder to form a film mainly composed of zinc oxide on a seed substrate comprising a zinc oxide single crystal and also to crystallize the formed film in a solid phase state. | 11-20-2014 |
20160160379 | SINGLE CRYSTALLINE GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME - A single-crystal graphene sheet includes a polycyclic aromatic molecule wherein a plurality of carbon atoms are covalently bound to each other, the single-crystal graphene sheet comprising between about 1 layer to about 300 layers; and wherein a peak ratio of a Raman D band intensity to a Raman G band intensity is equal to or less than 0.2. Also described is a method for preparing a single-crystal graphene sheet, the method includes forming a catalyst layer, which includes a single-crystal graphitizing metal catalyst sheet; disposing a carbonaceous material on the catalyst layer; and heat-treating the catalyst layer and the carbonaceous material in at least one of an inert atmosphere and a reducing atmosphere. Also described is a transparent electrode including a single-crystal graphene sheet. | 06-09-2016 |