Class / Patent application number | Description | Number of patent applications / Date published |
117002000 | PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING) | 9 |
20080216736 | MICROFLUIDIC DEVICE WITH DIFFUSION BETWEEN ADJACENT LUMENS - A microfluidic method is provided that comprises: delivering a first fluid to a first lumen of a microfluidic device and a second, different fluid to a second lumen of the microfluidic device, the first and second lumens sharing a common wall which allows for diffusion between the lumens over at least a portion of the length of the lumens; and having the first and second fluids diffuse between the first and second lumens. | 09-11-2008 |
20080223285 | METHODS FOR TRANSFERRING A LAYER ONTO A SUBSTRATE - Systems and methods for transferring a thin film from a substrate onto another substrate, a layer of the same area as the substrate, of a thickness from sub-micron to tens of micron, and of the thickness and flatness required by VLSI and MEMS applications, and with sufficiently low defect density in the transferred layer are disclosed. The method enables separating a solid layer from a supply substrate and optionally transferring the solid layer onto a target substrate. The method generally includes providing the solid layer on a hydrogen recombination region containing hydrogen-recombination-dopant at a concentration higher than that of the solid layer. The supply substrate includes the solid layer, a mother substrate, and the hydrogen recombination region. The hydrogen recombination region may form a part of the mother substrate or may be separate therefrom. Hydrogen atoms are promoted into the supply substrate to convert the hydrogen recombination region to a hydrogen-embitterment region which is then volatilized to form a void region, thereby separating the solid layer from the remainder of the supply substrate. The supply substrate may be bonded to the target substrate prior to the volatilizing so as to transfer the solid layer to the target substrate. The solid layer may be formed by epitaxial growth or by ion implantation. | 09-18-2008 |
20090007839 | Method for Manufacturing Silicon Single Crystal Wafer - The present invention provides a method for manufacturing a silicon single crystal wafer in which a silicon single crystal ingot is pulled by a CZ method, and a wafer sliced from the ingot is subjected to a rapid thermal annealing, wherein wafers sliced from the ingot which has been pulled while changing a pulling rate are subjected to rapid thermal annealings in various heat treatment temperatures, oxide dielectric breakdown voltage measurements are performed to get a relation between the pulling rate and the heat treatment temperatures, and a result of the oxide dielectric breakdown voltage measurements in advance, conditions of a pulling rate and a heat treatment temperature are determined based on the relation so that the whole area thereof in the radial direction may become N region after the rapid thermal annealing, and the pulling of the ingot and the rapid thermal annealing are performed to thereby manufacture the silicon single crystal wafer. As a result of this, a manufacturing method capable of efficiently and certainly manufacturing the silicon wafer in which a DZ layer can be secured in a wafer surface layer and an oxide precipitate can be formed in a bulk region of the wafer is provided. | 01-08-2009 |
20090071394 | AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE - A low dislocation density Al | 03-19-2009 |
20090260563 | METHOD OF PRODUCING ZINC OXIDE SEMICONDUCTOR CRYSTAL - A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1×10 | 10-22-2009 |
20100126406 | Production of Single Crystal CVD Diamond at Rapid Growth Rate - In a method of producing diamonds by microwave plasma-assisted chemical vapor deposition which comprises providing a substrate and establishing a microwave plasma ball in an atmosphere comprising hydrogen, a carbon source and oxygen at a pressure and temperature sufficient to cause the deposition of diamond on said substrate, the improvement wherein the diamond is deposited under a pressure greater than 400 torr at a growth rate of at least 200 μm/hr. from an atmosphere which is either essentially free of nitrogen or includes a small amount of nitrogen. | 05-27-2010 |
20100288184 | SILICON SINGLE CRYSTAL WAFER FOR IGBT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER FOR IGBT - A method for manufacturing a silicon single crystal wafer for IGBT, including introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×10 | 11-18-2010 |
20120132130 | METHOD OF PRODUCING SiC SINGLE CRYSTAL - A method of producing a SiC single crystal includes: disposing a SiC seed crystal at a bottom part inside a graphite crucible; causing a solution containing Si, C and R (R is at least one selected from the rare earth elements inclusive of Sc and Y) or X (X is at least one selected from the group consisting of Al, Ge, Sn, and transition metals exclusive of Sc and Y) to be present in the crucible; supercooling the solution so as to cause the SiC single crystal to grow on the seed crystal; and adding powdery or granular Si and/or SiC raw material to the solution from above the graphite crucible while keeping the growth of the SiC single crystal. | 05-31-2012 |
20130000544 | TITANIUM-DOPED INDIUM OXIDE FILMS - An apparatus and methods of forming the apparatus include a film of transparent conductive titanium-doped indium oxide for use in a variety of configurations and systems. The film of transparent conductive titanium-doped indium oxide may be structured as one or more monolayers. The film of transparent conductive titanium-doped indium oxide may be formed using atomic layer deposition. | 01-03-2013 |