Class / Patent application number | Description | Number of patent applications / Date published |
073754000 | Semiconductor | 39 |
20080229840 | Semiconductor device - A semiconductor device is equipped with a semiconductor sensor chip for detecting pressure variations that is arranged inside of a hollow cavity of a housing, wherein an opening is formed in a prescribed region of the housing, which is not positioned opposite to the semiconductor sensor chip, so as to allow the hollow cavity to communicate with an external space. The opening is formed using at least one through-hole having a thin slit-like shape. Alternatively, the opening is formed using plural through-holes each having a desired shape such as a thin slit-like shape, a circular shape, and a sectorial shape. Thus, it is possible to reduce negative influences due to environmental factors such as dust and sunlight with respect to the semiconductor sensor chip. | 09-25-2008 |
20080264174 | Pressure sensor with sensing chip protected by protective material - A pressure sensor is provided, which includes a case, a sensing chip located in the case for detecting pressure, and a protective material for covering and protecting the sensing chip in the case. Corners of the case, which are in contact with the protective material are each formed into a rounded shape. A curvature radius of each of the corners is adapted to be 0.5 mm or more. | 10-30-2008 |
20090126499 | Ultra miniature multi-hole probes having high frequency response - A pressure probe includes a longitudinal tubular housing symmetrically disposed about a central axis and having an ultra miniature conical front end and an opened back end. A plurality of aperture ports having an opening are disposed about the front end. A plurality of ultra small leadless transducers has a central active deflecting area in a semiconductor substrate, and a layer of oxide on a bottom surface. At least one sensor network is disposed within the active area on the oxide layer. A glass contact wafer is bonded to the non-deflecting portion of sensing network and has a number of apertures surrounding the active area suitable for interconnection with header. A header encloses each transducer and is of a shape and size to be positioned in an associated aperture port of the probe housing. At least one lead is coupled to a header pin extending from bottom of the aperture and directed through the bottom opening into the hollow of the probe housing. | 05-21-2009 |
20090165564 | SEMICONDUCTOR PRESSURE SENSOR AND DATA PROCESSING DEVICE - For example, to adjust an offset of a pressure sensor, there are provided an external resistor RE and an internal resistor circuit that is connected to both ends of RE and formed in a semiconductor chip such as a processor. The internal resistor circuit includes N pieces of internal resistors RI connected in series between both ends of RE, and (N+1) pieces of switches selecting one of voltages of respective nodes of the serial resistors and outputs the same as a signal. RE has a high absolute value precision of, e.g., several ten ohms to several hundred ohms, and RI has a high relative value precision of, e.g., several kilo-ohms. Therefore, an offset adjustment range is decided at a high absolute value precision mainly by RE, and with regard to the arrangement resolution, a high precision can be obtained along with the relative value precision of the RI. | 07-02-2009 |
20090199648 | TRANSISTOR-TYPE PRESSURE SENSOR AND METHOD FOR FABRICATING THE SAME - A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor. | 08-13-2009 |
20090235754 | ENCAPSULATION COMPOSITION FOR PRESSURE SIGNAL TRANSMISSION AND SENSOR - An encapsulation composition for pressure signal transmission including a flexible and low modulus epoxy resin as a substance in combination with plastic balls with pressure signal transmission properties as filler is provided. Therefore, the pressure signal is transmitted by utilizing the property of easy deformation of the flexible epoxy resin under pressure. And the effect of signal transmission is enhanced by the contact between plastic balls. The encapsulation composition is used in a sensor for transmitting pressure signals. The encapsulation composition is hydrophobic, so an electronic device of the sensor can be protected against moisture or water to extend its lifetime. Compared with traditional sensors using liquid for transmitting pressure signal, this sensor using solid encapsulation composition has advantages such as easy production and processing. | 09-24-2009 |
20090255344 | Pressure sensor module and method for manufacturing the same - For a pressure sensor module comprising a printed circuit board and a pressure cell, wherein the pressure cell has a measuring opening, and the pressure cell is encapsulated by injection molding compound in such a manner that the measuring opening is kept open, the pressure cell, as viewed from the measuring opening, is attached on the rear side of the printed circuit board. The printed circuit board has a recess in the area of the measuring opening, and the injection molding compound encloses the attachment area of the pressure cell on the printed circuit board. Thereby, the use of different adhesives, also soft adhesives, for the connection of the pressure cell with the printed circuit board is possible without this attachment area being attacked by the surrounding media. | 10-15-2009 |
20090314096 | PRESSURE SENSOR DEVICE - A semiconductor pressure sensor for a pressure sensor device has a pressure detection element which includes a membrane made of semiconductor material, particularly silicon. The sensor includes a support having a three-dimensional body passed through by a detection passage. The detection element is made integral with a first end face of the three-dimensional body, substantially at a respective end of the detection passage. The support is configured to serve the function of a mechanical and/or hydraulic adaptor or interface, with the aim of mounting the sensor into a pressure sensor device, particularly to allow mounting the pressure sensor into a pressure sensor device configured for mounting a sensor of the type referred to as monolithic or ceramic. | 12-24-2009 |
20100058876 | SEMICONDUCTOR DEVICE INCLUDING A PRESSURE SENSOR - A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella. | 03-11-2010 |
20100064818 | METHOD OF FLIP CHIP MOUNTING PRESSURE SENSOR DIES TO SUBSTRATES AND PRESSURE SENSORS FORMED THEREBY - A method of forming a sensor for sensing a physical property of a media. A substrate is provided having circuitry thereon including at least one electrical contact and a die is provided having disposed thereon corresponding electrical contacts and a sensing element for sensing a physical property of a media applied to said sensing element. One or more bonding ring or portions are arranged on the die. The die electrical contact(s) and bonding ring(s) can be bonded substantially simultaneously, with conductive bonding material, to the corresponding substrate electrical contact(s) and a surface of said substrate, respectively, to thereby form a sensor. The bonding ring(s) form a pressure seal. The substrate can include corresponding bonding ring(s). The die can include an ASIC for compensating temperature effects on said pressure sensor. | 03-18-2010 |
20100107774 | ULTRA-MINIATURE MULTI-HOLE PROBES HAVING HIGH FREQUENCY, HIGH TEMPERATURE RESPONSES - Embodiments of an ultra miniature pressure probe are disclosed. The pressure probe can include a probe body, a plurality of transducer ports, and a plurality of transducers. The probe body can be a longitudinal tubular body having a front conical end. The transducer ports can be disposed about the front end of the body. The transducers can be leadless SOI transducers, each having an active deflection area associated with a semiconductor substrate. Each transducer can be in communication with a header for supporting the transducer. The header can have a thickness substantially less than the probe diameter and can comprise a flange about an edge of the header. Each of the plurality of transducer ports can define an aperture and a counter-bore, wherein each transducer is positionable in an associated transducer port with the flange of the header of the transducer being welded to the counter-bore of the transducer port. | 05-06-2010 |
20100175483 | PRESSURE SENSOR DISCONNECT DETECTION FOR A BLOOD TREATMENT DEVICE - A system is disclosed for detecting an electrical sensor, the system includes a sensor signal processing circuit further comprising an input port to receive a connector including the output signal lines of the sensor, a resistor connected to the output signal line of said input port, wherein the resistor is connected to a predetermined voltage; a sensor circuit having a connector adapted to connect to the connector, wherein the sensor circuit has a resistance substantially less than the pull-resistor, and the sensor signal processing circuit detects an unconnected sensor based on the voltage applied by the resistor. | 07-15-2010 |
20100313667 | PRESSURE-SENSITIVE ADHESIVE SHEET FOR TESTING - Disclosed is an adhesive sheet for inspection, which is obtained by arranging an adhesive layer on a base film. The base film and the adhesive layer are electrically conductive, and an electrically conductive path is formed between the base film and the adhesive layer. Consequently, an inspection for electrical conduction of a semiconductor wafer or a semiconductor chip obtained by dicing a semiconductor wafer can be performed while the semiconductor wafer or the semiconductor chip is bonded to the adhesive sheet. In addition, this adhesive sheet for inspection enables to prevent deformation (warping) or breakage of a semiconductor wafer or generation of cracks or scratches on the back surface of the semiconductor wafer during the inspection. | 12-16-2010 |
20110000304 | PRESSURE SENSOR AND MANUFACTURING METHOD - A semiconductor substrate, provided with a differential pressure diaphragm, and a glass pedestal, which is provided on the bottom side of the semiconductor substrate, are provided, wherein: the bottom surface of the semiconductor substrate and the top surface of the glass pedestal are bonded together; a pressure introducing hole is formed in the glass pedestal so as to pass through the glass pedestal, connecting between the top and bottom surfaces of the glass pedestal; the pressure introducing hole is formed with a first diameter for the pressure introducing hole at the bottom surface of the glass pedestal from the bottom surface of the glass pedestal to a first position; and a second diameter for the pressure introducing hole at the top surface of the glass pedestal is larger than the first diameter; where a metal thin film layer is deposited on the bottom surface of the glass pedestal. | 01-06-2011 |
20110005326 | SENSOR PACKAGE ASSEMBLY HAVING AN UNCONSTRAINED SENSE DIE - A pressure detection mechanism having a pressure sense die which may be attached directly to a surface of an alumina-based substrate with an adhesive having an optimum thickness. The adhesive may be stress compliant and may be one or more of silicone, silicone-epoxy, epoxy or any other suitable adhesive material. A compensation and interface application specific integrated circuit may be attached to the surface of the package substrate. The pressure sense die may be electrically connected to the integrated circuit with bond wires. The integrated circuit may be electrically connected to trace conductors on the package substrate with bond wires, and trace conductors may be connected to stress compliant metal conductors or leads for external connection to a mounting surface such as a printed circuit board. Hard plastic, or like material, symmetric covers, with one or more pressure ports or vents, may be attached to both sides of the substrate. | 01-13-2011 |
20120118068 | Semiconductor Pressure Sensor, Pressure Sensor Apparatus, Electronic Equipment, and Method of Manufacturing Semiconductor Pressure Sensor - A semiconductor pressure sensor ( | 05-17-2012 |
20120144923 | SEMICONDUCTOR PRESSURE SENSOR - A semiconductor pressure sensor includes: a case; a pressure inlet port through which a measurement target fluid is introduced into the case; an atmosphere inlet port through which atmosphere is introduced; and a sensor chip configured to measure the pressure of the fluid with respect to atmospheric pressure. The pressure inlet port and the atmosphere inlet port are disposed on the same surface side of the case. The pressure inlet port is communicated with the inside of the case. | 06-14-2012 |
20120152029 | SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing a semiconductor pressure sensor, a multilayer structure including a polysilicon diaphragm, a polysilicon gauge resistor formed on a side of a space which is to serve as a vacuum chamber below the polysilicon diaphragm, and a group of insulating films containing the polysilicon diaphragm and the polysilicon gauge resistor and having an etching solution introduction hole in contact with a sacrificial layer is formed on the sacrificial layer. Then, an etching solution is supplied through the etching solution introduction hole and the sacrificial layer is etched with the etching solution, to thereby obtain a diaphragm body formed of the multilayer structure, which functions on the vacuum chamber, and a surface of a silicon substrate below a first opening of a first insulating film is etched to thereby form the space which is to serve as the vacuum chamber and a diaphragm stopper disposed in the space, protruding toward near the center of the diaphragm body. With this structure, it is possible to provide a technique for suppressing the variation in the performance of a semiconductor pressure sensor when the semiconductor pressure sensor is downsized. | 06-21-2012 |
20120285254 | PRESSURE SENSOR - A pressure sensor includes: a pressure conversion unit and a signal processing circuit installed in a semiconductor substrate. The pressure conversion unit includes: a diaphragm formed by partially thinning the semiconductor substrate; and a plurality of piezo resistive elements formed on a surface of the diaphragm. The signal processing circuit is constituted by a complementary metal-oxide semiconductor (CMOS) integrated circuit formed in a p-type conductive region disposed around the diaphragm on the surface of the semiconductor substrate, and the piezo resistive elements are provided by forming an n-type conductive region in the p-type conductive region on the surface of the diaphragm by diffusion of n-type impurities and diffusing p-type impurities in the n-type conductive region. | 11-15-2012 |
20130192379 | SMALL FORM FACTOR MICROFUSED SILICON STRAIN GAGE (MSG) PRESSURE SENSOR PACKAGING - A pressure sensor assembly includes a base including a radially offset pressure port. An electronics package may be included within a housing generally alongside the offset pressure port. Accordingly, the pressure sensor assembly exhibits a substantially smaller diameter than previously achieved. Methods of fabrication are provided. | 08-01-2013 |
20130199301 | Vertical Pressure Sensitive Structure - Embodiments related to pressure sensitive structures are described and depicted. | 08-08-2013 |
20130269443 | SOLID STATE PRESSURE SENSOR - A solid state sensor to sense pressure includes a semiconductor substrate having a crystallographic design axis, and an odd number of identical inverter modules coupled in series to form a ring oscillator on the semiconductor substrate. Each inverter module includes a pair of structurally identical CMOS inverter stages. A logic input circuit starts oscillation of the ring oscillator and select a signal propagation path therein, either through CMOS inverter stage more affected by the induced mechanical stress or through CMOS inverter stages less affected by the pressure, using two logic command signals. The ring oscillator allows a reading of a frequency of oscillation based on the two logic command signals. | 10-17-2013 |
20130327149 | CAPACITIVE PRESSURE SENSOR, MANUFACTURING METHOD THEREOF, AND PRESSURE SENSOR PACKAGE - A capacitive pressure sensor includes a semiconductor substrate, a first insulating portion configured to define a sensor region, a reference pressure chamber configured to divide a lower portion of the sensor region in a direction, a second insulating portion configured to divide a surface portion of the sensor region above the reference pressure chamber in the direction, and a trench configured to divide the sensor region in the direction. The sensor region is divided into at least three semiconductor parts by the reference pressure chamber, the second insulating portion, and the trench. | 12-12-2013 |
20140000377 | SEMICONDUCTOR PACKAGE WITH AIR PRESSURE SENSOR | 01-02-2014 |
20140000378 | DIFFERENTIAL PRESSURE SENSOR | 01-02-2014 |
20140144244 | INTERCHANGEABLE PRESSURE SENSOR ASSEMBLY AND METHODS OF ASSEMBLY - The present disclosure relates to sensors including pressure sensors, humidity sensors, flow sensors, etc. In some cases, a sensor unit subassembly for installation in or use with a pressure sensor housing may include at least one pressure sensor signal output terminal supported by a printed circuit board, a pressure input port, and a pressure sense element secured relative to one or more printed circuit boards. The printed circuit board(s) may include circuitry configured to format pressure output signals provided by the pressure sense element into a particularly chosen output format, and may provide the formatted pressure output signal(s) to an attached electrical connector of the pressure sensor housing. In some cases, the sensor unit subassemblies can be mixed with a multitude of different electrical connectors and/or with a multitude of different port connections to from a wide array of pressure sensor assemblies. | 05-29-2014 |
20140182386 | ELECTROSTATIC PRESSURE SENSOR - An electrostatic pressure sensor has a supporting diaphragm bonded to be held between first and second pedestal plates, a sensor chip supported on a top face of a center portion of the second pedestal plate. The supporting diaphragm has in the center portion thereof a large-diameter hole that forms a slit-shaped space between the first and second pedestal plates. The first pedestal plate has at least one inlet hole, for the fluid being measured, connecting to the slit-shaped space. The second pedestal plate has at least an outlet hole, connecting to the slit-shaped space, for directing the fluid being measured to the pressure-sensitive diaphragm of the sensor chip. The pedestal plate has an inlet hole of the first pedestal plate and an outlet hole of the second pedestal plate do not overlap each other in the direction of thickness of the first and second pedestal plates. | 07-03-2014 |
20140283616 | WORKFUNCTION MODULATION-BASED SENSOR TO MEASURE PRESSURE AND TEMPERATURE - A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET. | 09-25-2014 |
20140331777 | PRESSURE SENSOR MODULE AND LID - A pressure sensor module of the invention includes: a substrate; a lid connected to the substrate; a semiconductor pressure sensing device and an integrated circuit device functionally connected to the semiconductor pressure sensing device, which are accommodated in an internal space surrounded by the substrate and the lid; a pressure introducing hole that communicates the internal space to an external space; and a light shield that is provided between the external space and the internal space and is formed so that a hole axis of the pressure introducing hole is bent. | 11-13-2014 |
20140338460 | MICROMECHANICAL COMPONENT, MANUFACTURING METHOD FOR A MICROMECHANICAL COMPONENT AND METHOD FOR MOUNTING A MICROMECHANICAL COMPONENT - A micromechanical component having a sensor chip is described, on and/or in which at least one sensor element is disposed, and a cladding, formed of an injection-molding material, encloses the sensor chip in such a way that at least one partial area of a surface of the sensor chip is covered in airtight fashion by the injection-molding material. At least one channel is formed in the injection-molding material, which takes a course, straight or not straight, from an outer surrounding area of the cladding toward the at least one sensor element of such a length that a change in shape and/or a change in chemical consistency of at least one part of the at least one sensor element is able to be brought about as a function of at least one physical property and/or at least one chemical partial composition of a medium present in the at least one channel. | 11-20-2014 |
20150040675 | Absolute Pressure Sensor With Improved Bonding Boundary - A pressure sensor includes a top cap with a recess formed in an end of the top cap and a cavity formed in the end of the top cap to communicate with the recess. The cavity extends further axially into the top cap than the recess thereby having depth greater than a depth of the recess. Outer edges of the recess extend laterally outward beyond outer edges of the cavity thereby defining a bonding boundary. A silicon substrate has a sensing circuit on a top side thereof. The top cap is bonded to the top side of the silicon substrate in a range from the outer edges of the top cap to the bonding boundary. The recess and the cavity of the top cap face the top side of the silicon substrate and form a reference vacuum cavity. When pressure is exerted on a backside of the substrate, a portion of the substrate is constructed and arranged to deflect. | 02-12-2015 |
20150107367 | DUAL RANGE HIGH PRECISION PRESSURE SENSOR - A high-precision pressure sensor with two or more pressure ranges is formed from multiple micro-electromechanical system (MEMS) pressure transducers mounted inside a housing and coupled to sense a pressurized fluid. The non-linear outputs of the MEMS pressure transducers are linearized by a corresponding number of processors, preferably DSPs, each processor being coupled to a corresponding MEMS pressure transducer and receiving the MEMS pressure transducer output signal there from. Each processor generates an applied pressure output signal, which is representative of a pressure applied to the MEMS pressure transducer, which is a linearized and digitized version of output signal from the MEMS pressure transducers. The data that is output from multiple processors, each of which outputs pressure data pertaining to a different range of pressures, is transmitted serially on a serial data bus. | 04-23-2015 |
20150122042 | PRESSURE SENSOR - A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion. | 05-07-2015 |
20150128715 | PRESSURE DETECTION DEVICE - The present invention provides a pressure detection device which enables a simplified structure and reduced manufacturing costs. A pressure detection device is characterized by being provided with: a fluid inflow member; a semiconductor-type pressure sensor; a first unit member which has a first lead terminal connected to the sensor; a second unit member which has a lid member that covers the sensor and forms an enclosed space, and a second lead terminal that is connected to the first lead terminal; and a resinous cover member which combines the respective members and covers the members by resin molding with part of the second lead terminal exposed to the outside therethrough, and characterized in that the sensor and the first lead terminal are connected by wire bonding, the first lead terminal and the second lead terminal are joined by welding, and the joined portion is covered when the resinous cover member is molded. | 05-14-2015 |
20150300905 | SEMICONDUCTOR SENSOR WITH GEL FILLED CAVITY - A pressure sensor has a housing having a bottom surface and side walls that form a cavity. A pressure sensor die is attached to the bottom of the cavity and covered with a layer of low modulus gel. A lid is secured to upper ends of the side walls and covers the cavity, gel and pressure sensor die. The lid has an inner surface facing the gel and an exposed outer surface, and includes protrusions extending from the inner surface along the side walls and towards the gel such that the gel near the upper ends of the side walls is displaced towards a central region of the cavity to ensure that the gel completely covers the pressure sensor die. | 10-22-2015 |
20150330858 | PRESSURE DETECTION DEVICE AND METHOD FOR PRODUCING SAME - Provided are a pressure detection device having a fail-safe structure for minimizing leaking out of a fluid targeted for pressure detection, and a method for producing the same. A pressure detection device is provided with: a fluid inflow member having a flow path; a pressure sensor for detecting the pressure of the fluid that has flowed into the flow path; a base plate unit having a first resin section surrounding the pressure sensor; a lid section which is bonded to the first resin section so as to cover the pressure sensor from above, and forms a sealed space in the interior of which the pressure sensor is located; a terminal unit; and a resin cover section for bonding the fluid inflow member, the base plate unit, the lid section, and the terminal unit. The lid section is bonded to the first resin section and is pushed on from above by the resin cover section . | 11-19-2015 |
20150346045 | PRESSURE SENSOR MODULE - A pressure sensor module is described for determining the pressure of a measurement medium, and includes a sensor chip, a housing having a pressure connector, and a plug part for the electrical connection of the pressure sensor module. In addition, plug contacts that are electrically connected to the sensor chip are provided in the plug part. In addition, in the provided pressure sensor module it is provided that the sensor chip is capable of being loaded with the measurement medium through the pressure connector, and the pressure connector is made at least partly of a light metal. | 12-03-2015 |
20160041055 | SMALL FORM FACTOR PRESSURE SENSOR - A small form factor Microfused Silicon Strain gage (MSG) sensor incorporates an offset spring and feed-in features. A pressure sensor includes a spring having first and second coiled sections offset by a coiled center section in a middle that is used to make offset contact between two electrical contact pads. | 02-11-2016 |
20160097692 | SEMICONDUCTOR DEVICE, AND RESISTANCE MEASURING SYSTEM AND PRESSURE INSTRUMENTATION DEVICE EACH INCLUDING THE SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device | 04-07-2016 |