Class / Patent application number | Description | Number of patent applications / Date published |
073310060 | Semiconductor | 80 |
20090078026 | Gas Sensor - A gas sensor has at least one gas sensitive layer, which has at least one surface area in which the work function is dependent upon the concentration of a target gas capable of being brought into contact with the surface zone. At least one electric potential sensor is capacitatively coupled to the surface zone over an air gap. The surface zone of the gas sensitive layer is covered with an electrically insulating coating which is inert to the target gas and which is adhesively bound to the gas sensitive layer. The coating is configured so that it is permeable to the target gas and so that when the target gas contacts the surface zone of the gas sensitive layer, it prevents or at least impedes an alteration of the bound state of atoms and/or molecules bound to the surface zone and differing from the target gas. | 03-26-2009 |
20090084162 | CHEMICAL SENSOR - The application relates to a chemical sensor device comprising a substrate ( | 04-02-2009 |
20090084163 | AMBIENT-TEMPERATURE GAS SENSOR - The invention provides a novel method for the fabrication of nanomaterials, especially nanostructures arranged on a substrate with nanoparticles deposited thereon. The methods of the present invention can be used to fabricate a novel ambient-temperature gas sensor that is capable of detecting a variety of specific gasses over a range of concentrations. | 04-02-2009 |
20090113992 | Miniaturized Metal (Metal Alloy)/ PdOx/SiC Hydrogen And Hydrocarbon Gas Sensors - A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO | 05-07-2009 |
20090126460 | Gas-Sensing Semiconductor Devices - A gas-sensing semiconductor device | 05-21-2009 |
20090133474 | METHOD AND APPARATUS FOR SENSING HYDROGEN GAS - A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen. | 05-28-2009 |
20090165533 | SENSOR DEVICE WITH HEATED NANOSTRUCTURE - A nanostructure sensing device includes a substrate, a nanotube disposed over the substrate, and at least two conductive elements electrically connected to the nanotube. A electric current on the order of about 10 μA, or greater, is passed through the conductive elements and the nanotube. As a result, the nanotube heats up relative to the substrate. In the alternative, some other method may be used to heat the nanotube. When operated as a sensor with a heated nanotube, the sensor's response and/or recovery time may be markedly improved. | 07-02-2009 |
20090193874 | METHOD FOR CHEMICAL SENSOR FABRICATION AND RELATED SENSOR - A method includes forming a hole in a first wafer and forming a sensor structure in or on a second wafer. The second wafer includes a piezoelectric material. The method also includes bonding the first wafer and the second wafer, where the sensor structure is located between the wafers. The method further includes forming a sensing layer by depositing material between the wafers through the hole in the first wafer. The sensing layer could be formed by depositing a sensing layer material on the second wafer using direct printing. Also, the hole through the first wafer could be formed using ultrasonic milling, micro-drilling, laser drilling, wet etching, and/or plasma etching. A spacer material could be used to bond the wafers together, such as frit glass paste or an organic adhesive. Trenches could be formed in the first wafer to facilitate easier separation of multiple sensors. | 08-06-2009 |
20090314060 | CIRCUIT ASSEMBLY FOR OPERATING A GAS SENSOR ARRAY - The invention relates to a circuit assembly for operating a sensor array, in particular, a gas sensor array for detecting gases, which comprises at least one signal line. According to said invention, a signal line is divided into two parallel line branches with a sensor and a diode, preferably a Schottky diode, arranged in each of said two parallel line branches, whereby the two diodes have opposite electrical polarity. The use of different polarity diodes permits actuation of both sensors through only one signal line. It can be determined if the current flows through one or the other of both sensors by merely polarizing the electrical potential applied to the signal line appropriately. | 12-24-2009 |
20100043530 | SENSOR DEVICE - A sensor device. One embodiment provides a first sensor having a first sensor surface. The first sensor surface is exposed to allow sensing of a first variable. A second sensor has a second sensor surface. The second sensor surface is sealed to inhibit sensing of the first variable, and a mold material is embedded the first and second sensors. | 02-25-2010 |
20100050744 | Multi-sensor Gas Detectors - A multi-sensor gas detector includes a solid state heatable gas sensor, and at least one, different, infrared gas sensor. Emitted radiant energy from a heated surface of the solid state gas sensor, incident on the infrared gas sensor generates an output signal indicative thereof. The output signal and a signal from the solid state gas sensor can be coupled to evaluation circuits. The evaluation circuits can be implemented with a programmable processor and associated, executable control software to establish the presence of a target gas. One or more gas detectors can be incorporated into a regional monitoring system that includes a control unit coupled to a plurality of fire, smoke or gas detectors. | 03-04-2010 |
20100050745 | Gas sensor made of field effect transistor based on ZnO nanowires - The present invention discloses a gas sensor made of field effect transistor based on ZnO nanowires (ZnO-FET) which operates according to the principle of metal-oxide-semiconductor field effect transistor (MOSFET) and has a charge carrier channel made of ZnO nanowires between source and drain. The gas sensor device disclosed in the present invention has three electrodes-gate, source and drain, so that it is different from the known gas sensor device which has only two electrodes-cathode and anode. The ZnO nanowires as charge channel in the gas sensor device of the present invention is an n-type semiconductor with high specific surface area, and its electric resistance can be controlled by the gate bias, so that the capability of the present device for sensing gas can be largely promoted. | 03-04-2010 |
20100089123 | HYDROGEN SENSOR AND METHOD FOR MANUFACTURING THE SAME - A hydrogen sensor ( | 04-15-2010 |
20100192675 | EXPLOSION-PROOF GAS SENSOR WITHOUT PRESSURE-PROOF HOUSING - A gas sensor is provided for use in a hazardous explosive atmosphere present continuously or for a long time. The gas sensor is not provided with a pressure-proof housing and is provided with at least one catalytic or semiconductor measuring element ( | 08-05-2010 |
20100206049 | Gas Sensor, Gas Measuring System Using the Gas Sensor, and Gas Detection Module for the Gas Sensor - A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity. | 08-19-2010 |
20100212403 | Room Temperature Hydrogen Sensor - A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature. | 08-26-2010 |
20100269569 | HYDROGEN GAS DETECTION USING SINGLE PALLADIUM NANOWIRES - Devices and methods for fast, sensitive hydrogen gas detection using a single palladium nanowire. In one embodiment, a hydrogen sensor comprises a palladium nanowire extending between metal contacts. The palladium nanowire is not subject to fracturing when exposed to hydrogen. The nanowire is able to rapidly and reversibly detect hydrogen as a resistance increase down to 2 ppm with excellent reproducibility and baseline stability at room temperature. | 10-28-2010 |
20110048108 | GAS SENSOR - The present invention is intended to provide a gas sensor that can detect low concentration NO | 03-03-2011 |
20110067484 | SEMICONDUCTOR SENSOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor sensor includes: a semiconductor substrate; a plurality of piezoelectric thin films layered on the semiconductor substrate, the plurality of piezoelectric thin films including at least a pair of the piezoelectric thin films layered above and below; a pair of electrodes that are formed at an interface of at least the pair of the piezoelectric thin films layered above and below and excite surface acoustic waves; a thin film directly under a lowest-layer piezoelectric film of the piezoelectric thin films; a metal thin film that is formed at an interface of the lowest-layer piezoelectric thin film and the thin film, and facilitate a growth of a ridge-and-valley portion on a surface of an uppermost-layer piezoelectric thin film of the piezoelectric thin films; and a sensitive film for molecular adsorption formed on at least the ridge-and-valley portion on the uppermost-layer piezoelectric thin film. | 03-24-2011 |
20110088456 | NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR - HEMT-based hydrogen sensors are provided. In accordance with one embodiment, a normalized sensor is provided having a control HEMT-based sensor connected in series to an active HEMT-based sensor. The control and the active sensor include functionalized gate regions. The gate functionalization for both the control and the active sensor is the same material that selectively absorbs hydrogen gas. The control sensor further includes a protective layer to inhibit its gate functionalization from being exposed to hydrogen. In one embodiment, the final metal for the contacts of the sensors is used as the protective layer. In other embodiments, the protective layer is a dielectric or polymer. | 04-21-2011 |
20110113859 | LOW-VOLTAGE THIN-FILM FIELD-EFFECT TRANSISTORS - A low-voltage thin-film field-effect transistor is formed by forming a gate, forming a dielectric layer on the surface of the gate, forming a source region and a drain region, and forming a semiconductor layer adjacent the dielectric layer. The dielectric layer is formed as a native oxide layer by oxidizing the surface of the gate. The semiconductor layer is deposited by spray pyrolysis. The dielectric layer may be functionalized with a self-assembling monolayer dielectric layer. The dielectric layer may be formed as a self-assembling monolayer, without first forming a native oxide (or other) dielectric layer. | 05-19-2011 |
20110138880 | SENSOR APPARATUS AND METHOD THEREFOR - A sensor apparatus includes a metal oxide semiconductor (“MOS”) sensor with a gas-sensing surface normally having a first sensitivity to a first species of flammable gas and a second sensitivity to a second, different species of flammable gas. A selective sensitivity-enhancement layer is disposed on the gas-sensing surface such that the first sensitivity becomes increased and the second sensitivity remains substantially unchanged. | 06-16-2011 |
20110138881 | SENSOR APPARATUS AND METHOD THEREFOR - A sensor apparatus includes a metal oxide semiconductor sensor and a housing having an internal chamber in which the sensor is disposed. The housing includes at least one window for the ingress of a gas into the internal chamber from an atmosphere exterior to the housing. A gas-selective barrier is disposed across the at least one window. | 06-16-2011 |
20110138882 | SEMICONDUCTOR GAS SENSOR HAVING LOW POWER CONSUMPTION - Provided are a structure and operating method of a semiconductor gas sensor having low power consumption. The semiconductor gas sensor is adapted to adsorb gas to a low-dimensional semiconductor nanomaterial at room temperature, output a change in resistance of the low-dimensional semiconductor nanomaterial, apply power to a heater, desorb the gas adsorbed to the low-dimensional semiconductor nanomaterial, and return the resistance of the low-dimensional semiconductor nanomaterial back to initial resistance. The semiconductor gas sensor senses the gas at room temperature using the low-dimensional semiconductor nanomaterial having a high-sensitivity characteristic at room temperature, and drives the heater only when the adsorbed gas is desorbed. Thereby, it is possible to improve a gas sensing characteristic, reduce power consumption, and provide a rapid response speed. | 06-16-2011 |
20110290003 | GAS SENSOR WITH A ZINC-OXIDE NANOSTRUCTURE AND METHOD FOR PRODUCING THE SAME - A gas sensor includes a substrate; a seed layer positioned on the substrate; a zinc-oxide nanostructure formed on the seed layer; a metal nanoparticle formed on the zinc-oxide nanostructure; a first electrode positioned on the zinc-oxide nanostructure; and a second electrode positioned on the zinc-oxide nanostructure apart from the first electrode to electrically connect to the first electrode. | 12-01-2011 |
20120042713 | GAS SENSOR USING METAL OXIDE NANOPARTICLES, AND METHOD FOR MANUFACTURING SAME - The present invention provides a gas sensor, including: a sensor substrate provided with an electrode; and a thin layer of sensor material formed by spraying a solution in which metal oxide nanoparticles are dispersed onto the sensor substrate. The gas sensor is advantageous in that a sensor material is formed into a porous thin layer containing metal oxide nanoparticles having a large specific surface area, thus realizing high sensitivity on the ppb scale and a high reaction rate. Further, the gas sensor is advantageous in that it can be manufactured at room temperature, and the thickness of a sensor material can be easily adjusted by adjusting the spray time, so that a thin gas sensor or a thick gas sensor can be easily manufactured. | 02-23-2012 |
20120055236 | NANO STRUCTURED FIELD EFFECT SENSOR AND METHODS OF FORMING AND USING SAME - A solid-state field-effect transistor sensor for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a porous or structured channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance. | 03-08-2012 |
20120060587 | Gas Detector that Utilizes an Electric Field to Assist in the Collection and Removal of Gas Molecules - A semiconductor-based gas detector enhances the collection of gas molecules and also provides a self-contained means for removing collected gas molecules by utilizing one or more electric fields to transport the gas molecules to and away from a metallic material that has a high permeability to the gas molecules. | 03-15-2012 |
20120090381 | GAS SENSOR - A field effect gas sensor ( | 04-19-2012 |
20120090382 | DEVICE AND METHOD FOR ANALYSING GAS AND ASSOCIATED MEASUREMENT STATION - The invention relates to a station for measuring gaseous pollution in a transport enclosure of semiconductor substrates comprising a gas analysis device for determining the concentration of the gas to be analysed, said analysis device including: a diluting unit ( | 04-19-2012 |
20120096928 | METHOD FOR MANUFACTURING A SENSOR DEVICE OF A GASEOUS SUBSTANCE OF INTEREST - A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance. | 04-26-2012 |
20120151997 | METHOD OF MAKING AN ELECTRICALLY CONDUCTIVE STRUCTURE, METHOD OF MAKING A GAS SENSOR, GAS SENSOR OBTAINED WITH THE METHOD AND USE OF THE GAS SENSOR FOR SENSING A GAS - A method of making an electrically conductive structure in a surface portion of a dielectric material is disclosed. In one aspect, the method includes creating vacancies at at least part of an exposed surface of the dielectric material by removing atoms from a plurality of molecules of the dielectric material. | 06-21-2012 |
20120198918 | MICROELECTROMECHANICAL SYSTEMS TYPE SEMICONDUCTOR GAS SENSOR USING MICROHEATER HAVING MANY HOLES AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode. | 08-09-2012 |
20120227466 | METHODS FOR DETECTION OF ACETYLENE ON BIMETALLIC SENSORS - Methods for detection of acetylene, acetylene concentration and changes in acetylene concentration in a mixture of gases are provided. The gas mixture includes acetylene and hydrogen and may be a hydrogen gas stream or a gas stream also including ethylene. The methods of the invention can also detect acetylene in a gas mixture dissolved in a liquid. The methods of the invention rely on the use of metal-insulator-semiconductor (MIS) sensors in which the metal layer is a continuous layer of a binary alloy selected to facilitate acetylene detection such as alloys of palladium with a second metal such as silver, gold or copper. | 09-13-2012 |
20120247187 | SENSOR MOUNTING INTO THE TEMPERATURE WELL OF A TRANSFORMER - The invention provides a sensor assembly for a sensor having a semiconductor element for measuring hydrogen concentration in an insulating fluid in electric power generation, transmission, and distribution equipment having a temperature well that has a tubular portion extending into the equipment providing access to the interior of the equipment, the temperature well having a movable valve at an end of the tubular portion. The tubular portion includes a first flange, a tubular housing member attached to the first flange having one end adapted to be telescopically received in the temperature well. The tubular portion further includes a housing body having one end thereof connected to the tubular housing member having a substantially uniform cross section extending from the tubular housing member wherein at least one wire receiving opening extends through the housing body. The tubular portion also includes a cover closing an end of the housing body distal from the one end, a first seal disposed between the tubular housing member and the tubular portion of the temperature well for blocking the flow of insulating fluid in the space between the housing member and the temperature well wherein said tubular housing member is long enough so that when fully extended into the temperature well, the tubular housing causes the movable valve to open. | 10-04-2012 |
20120272721 | DEVICE COMPRISING A GAS SENSOR SENSITIVE TO THE PRESENCE OF A SPECIFIC GAS, METHOD OF MANUFACTURING A GAS SENSOR SENSITIVE TO THE PRESENCE OF A SPECIFIC GAS FOR USE IN THE DEVICE AND USE OF THE DEVICE - A device including a gas sensor sensitive to the presence of a specific gas is disclosed. In one aspect, the gas sensor includes a first segment made of a dielectric material and a second segment made of a semiconducting material. The first segment has a first surface exposed to an environment of the gas sensor and is located between the environment and the second segment. The first segment has a first thickness and the second segment has a second thickness. The first thickness is selected such that upon diffusion of a gas molecule of the specific gas into the first segment, a dipole of the molecule of the specific gas detectably influences a bending of an energy-band structure of the semiconducting material of the second segment. The second thickness is in the order of, or smaller than, the Debye length of the semiconducting material. | 11-01-2012 |
20120304741 | FLEXIBLE AMINE SENSOR BASED ON ULTRATHIN POLY-THIOPHENE THIN FILM TRANSISTOR - The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al | 12-06-2012 |
20120304742 | INTEGRATED CMOS POROUS SENSOR - A single chip wireless sensor comprises a microcontroller and transmit/receive interface, which is coupled to a antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a process in which the electronics and sensor components are manufactured using CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an polymer component is spun onto the wafer to form a top layer incorporating sensing electrodes. This material is cured at 300° C., lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in its dielectric constant, reducing to 2.9. The thermoset dielectric, not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing. | 12-06-2012 |
20130042669 | GAS SENSOR - A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening. | 02-21-2013 |
20130061660 | Gas Sensor, Gas Measuring System Using the Gas Sensor, and Gas Detection Module for the Gas Sensor - A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity. | 03-14-2013 |
20130091929 | GAS SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed are a gas sensor, and a method of manufacturing and using the same. The method includes: forming a detection material on a heater; coating an encapsulant on the detection material; and heating the heater to remove the encapsulant from the detection material when the gas sensor is operated. | 04-18-2013 |
20130111977 | Chemical Sensor - The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas. | 05-09-2013 |
20130139570 | SEMICONDUCTOR GAS SENSOR AND METHOD FOR MEASURING A RESIDUAL GAS PROPORTION WITH A SEMICONDUCTOR GAS SENSOR - A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture. | 06-06-2013 |
20130186178 | GAS SENSOR AND A METHOD OF MANUFACTURING THE SAME - The gas sensor has a substrate, a gate insulating film arranged on the substrate, and a gate electrode arranged on the gate insulating film, wherein the gate electrode comprises a metal oxide mixture film produced by mixing an oxygen-doped amorphous metal that contains oxygen with crystals of an oxide of the metal and a platinum film formed on the metal oxide mixture film, the platinum film is composed of multiple platinum crystal grains and grain boundary regions that are present between the platinum crystal grains, the grain boundary regions are filled with a metal oxide mixture, and each of the platinum crystal grains is surrounded by the metal oxide mixture. | 07-25-2013 |
20130219995 | OBTAINING SELECTIVITY IN GAS SENSORS VIA A SENSOR ARRAY SYSTEM COMPOSED OF P AND N TYPE MATERIAL - Systems and methods for discriminating among volatile compounds is provided using a semiconductor junction structure or sensor device. Sensor devices of the present disclosure employ a combination of hole carriers (p-type) and electron carriers (n-type) metal oxides deposited, for example, on a gold microspring array designed so that it has several leads that are at different distances from each other. | 08-29-2013 |
20130255358 | Hydrogen Sensor and Method of Manufacturing the Same - A method of the invention includes preparing a mold having a hydrogen detection part pattern, a nanogap pattern and a base to be formed on a hydrogen sensor substrate; preparing a material to which the patterns are transferrable; forming the hydrogen sensor substrate by bringing the mold into contact with the material to thus transfer the patterns to the material and then detaching the mold from the material to which the patterns are transferred, the hydrogen sensor substrate having a base part corresponding to the base, a plurality of hydrogen detection parts erected from the base part and corresponding to the nanogap pattern and a plurality of nanogaps formed between the hydrogen detection parts and corresponding to the hydrogen detection part pattern; and forming, on the hydrogen sensor substrate, a thin film of a transition metal or an alloy thereof to be expanded by hydrogen. | 10-03-2013 |
20130283889 | BIOLOGICAL GAS DETECTION APPARATUS AND BIOLOGICAL GAS DETECTION METHOD - A biological gas detection apparatus of an embodiment of the present invention includes: a sensor unit including plural types of gas sensors; a control unit of the sensor unit; a data recording unit; and a data analyzing unit, wherein the data recording unit includes a database on properties of sensitivities of the gas sensors for a single body of a desired gas component, a single body of an interference gas component, and a mixed gas of these that are included in the biological gas, and the data analyzing unit calculates concentration of the desired gas component based on sensitivities of the gas sensors output when detecting the biological gas and the database. | 10-31-2013 |
20130333446 | Gas Sensitive Materials for Gas Detection and Methods of Making - A gas sensitive material comprising SnO | 12-19-2013 |
20140033797 | METHOD FOR DETERMINING INTERSTITIAL OXYGEN CONCENTRATION - A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment. | 02-06-2014 |
20140182358 | GAS DETECTION SYSTEM WITH MOISTURE REMOVAL - A gas detection system is provided. The system includes a sample gas inlet configured to receive a sample of gas and a sample chamber operably coupled to the sample gas inlet. The sample chamber has at least one gas sensor disposed therein. The gas sensor provides a gas sensor output indicative of a species of interest in the sample of gas. A controller is coupled to the at least one gas sensor and is configured to provide information related to the species of interest based on the gas sensor output. A moisture removal device is disposed to receive the sample of gas and remove moisture from the sample before the sample reaches the at least one gas sensor. | 07-03-2014 |
20140208830 | CMOS GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS gas sensor comprises a membrane ( | 07-31-2014 |
20140260546 | Combinational Array Gas Sensor - Described is a combinational array gas sensor. In one aspect is described as an apparatus for measuring a concentration of at least one gas in air comprising an integrated semiconductor sensor unit, the semiconductor sensor unit comprising a common substrate; a plurality of semiconductor sensors disposed over the common substrate, wherein each of the plurality of semiconductor sensors senses at least one of a plurality of different gases, wherein at least one of the plurality of sensors senses the at least one gas, and wherein each of the plurality of the semiconductor sensors include two electrodes and a plurality of semiconductor ridges disposed between the two electrodes, each of the plurality of semiconductor ridges being made of a same composition of semiconductor material, thereby allowing the air with the gas disposed therein to be proximate to each of the plurality of semiconductor ridges unless inhibited by an inhibitor material; and a circuit that uses a source current to pass a measurement current through at least some of the plurality of semiconductor sensors and cause outputting of at least one measurement signal from the plurality of semiconductor sensors. | 09-18-2014 |
20140260547 | GRAPHENE-BASED GAS AND BIO SENSOR WITH HIGH SENSITIVITY AND SELECTIVITY - A graphene sensor and method for selective sensing of vapors, gases and biological agents are disclosed. The graphene sensor can include a substrate; a dielectric substrate on an upper layer of the substrate; a layer of graphene on an upper layer of the dielectric substrate; and a source and drain contact on an upper surface of the layer of graphene. The method for detection of vapors, gases and biological objects with low frequency input as a sensing parameter can include exposing a graphene device to at least one vapor, gas, and/or biological object, the graphene device comprising: a substrate; a dielectric substrate on an upper layer of the substrate, a layer of graphene on an upper layer of the dielectric substrate, and a source and drain contact on an upper surface of the layer of graphene; and measuring a change in a noise spectra of the graphene device. | 09-18-2014 |
20140290338 | HYDROGEN GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME - A hydrogen sensor and a method of manufacturing the same are provided. The hydrogen sensor includes i) a substrate, ii) a first metal oxide semiconductor that is formed in the substrate, and iii) a second metal oxide semiconductor that is separated from the first metal oxide semiconductor and that is formed in the substrate. The first metal oxide semiconductor includes i) a source electrode that is positioned on the substrate, ii) a drain electrode that is positioned on the substrate, iii) a channel layer that connects the source electrode and the drain electrode, iv) a gate insulating layer that is positioned on the channel layer, v) a gate electrode that is positioned on the gate insulating layer, and vi) a plurality of nano metal catalyst protrusions that are formed at an outside surface of the gate electrode to be applied to contact with hydrogen. | 10-02-2014 |
20140290339 | Sensor Element and Method for Detecting a Gas - A sensor element for the qualitative and/or quantitative detection of a gas includes a front electrode configured to be exposed to the gas to be measured, a back electrode, and an electrically insulating layer positioned between front electrode and back electrode. The front electrode and the back electrode can be electrically contact connected to an AC voltage source for a qualitative and/or quantitative detection of a gas. The electrically insulating layer is at least locally polarizable in such a way that in a polarized state the electrically insulating layer has a relative permittivity which is lower than in a non-polarized state by a factor in a range of greater than or equal to 1.1. | 10-02-2014 |
20140311221 | GAS SENSORS AND METHODS OF PREPARATION THEREOF - Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, methods of enhancing sensor response with light, and the like. | 10-23-2014 |
20140326049 | METHOD AND APPARATUS FOR REAL-TIME MEASUREMENT OF FUEL GAS COMPOSITIONS AND HEATING VALUES - An exemplary embodiment can be an apparatus for real-time, in situ measurement of gas compositions and heating values. The apparatus includes a near infrared sensor for measuring concentrations of hydrocarbons and carbon dioxide, a mid infrared sensor for measuring concentrations of carbon monoxide and a semiconductor based sensor for measuring concentrations of hydrogen gas. A data processor having a computer program for reducing the effects of cross-sensitivities of the sensors to components other than target components of the sensors is also included. Also provided are corresponding or associated methods for real-time, in situ determination of a composition and heating value of a fuel gas. | 11-06-2014 |
20140373600 | GAS SENSORS AND METHODS OF PREPARATION THEREOF - Embodiments of the present disclosure include sensors, arrays of conductometric sensors, devices including conductometric sensors, methods of making conductometric sensors, methods of using conductometric gas sensors, and the like. | 12-25-2014 |
20150020577 | GAS SENSOR - A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material. | 01-22-2015 |
20150033827 | INTEGRATED METAL OXIDE CHEMICAL SENSOR - A chemical sensor ( | 02-05-2015 |
20150047417 | CORE-SHELL NANOPARTICLE, METHOD OF FABRICATING THE SAME AND GAS SENSOR USING THE SAME - The present invention relates to a core-shell nanoparticle, a method of fabricating the same and a gas sensor using the same, more particularly to a core-shell nanoparticle which includes a core including a first metal oxide and a shell including a second metal oxide, the first metal oxide and the second metal oxide being oxides of the same metal having different oxidation states, a method of fabricating the same and a gas sensor using the same. | 02-19-2015 |
20150075258 | GAS SENSOR PACKAGE - A gas sensor package is configured such that an output change part is provided in the gas sensor package including a gas sensor so that a resistance output mode can be changed to a voltage output mode, thereby enabling the gas sensor to have a regular initial voltage value by compensating a resistance change value to an initial gas sensing material. According to embodiments of the present application, a gas sensor package is configured such that a gas moving separation part is formed between a gas sensing element and a substrate with regard to a structure in which a gas sensing element is mounted to the substrate in a flip chip bonding method so that gas can be smoothly moved and thus gas sensing efficiency can be maximized. | 03-19-2015 |
20150090002 | GAS SENSOR PACKAGE - Provided is a gas sensor package, including: a first substrate including a gas inflow hole; and a gas sensing element mounted to the first substrate and including a gas sensing portion disposed to correspond to the gas inflow hole. | 04-02-2015 |
20150096353 | LAYER SYSTEM - A layer system having a layer region whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface. | 04-09-2015 |
20150096354 | LAYER SYSTEM - A layer system having a layer region, whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface only partially. | 04-09-2015 |
20150121995 | VERTICALLY INTEGRATED SYSTEMS - Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer. | 05-07-2015 |
20150143874 | SENSOR DEVICE - A sensor device comprises a sensitive element ( | 05-28-2015 |
20150308972 | GAS SENSOR ARRAY, GAS ANALYSIS METHOD, AND GAS ANALYSIS SYSTEM - A gas sensor array containing a gas flow path in which a gas to be analyzed flows, and a plurality of gas sensors set along the gas flowing direction of the gas flow path, wherein the gas sensors each has a constitution wherein semiconductor microcrystals that come into contact with the gas to be analyzed that flows in the above gas flow path are disposed between two electrodes. | 10-29-2015 |
20150323482 | GAS SENSOR AND GAS SENSOR STRUCTURAL BODY - To propose a gas sensor and a gas sensor structural body that can improve detection sensitivity of gas more than in the conventional gas sensors with a simple configuration. A graphene ( | 11-12-2015 |
20150338360 | Integrated CMOS Porous Sensor - A single chip wireless sensor comprises a microcontroller and transmit/receive interface, which is coupled to a antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a process in which the electronics and sensor components are manufactured using CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an polymer component is spun onto the wafer to form a top layer incorporating sensing electrodes. This material is cured at 300° C., lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in its dielectric constant, reducing to 2.9. The thermoset dielectric, not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing. | 11-26-2015 |
20150355125 | METHOD AND DEVICE FOR CHARACTERISING A FLUID MEDIUM USING A SEMI-CONDUCTIVE SUBSTRATE - A method to determine an electronic signature characteristic of a fluid medium comprises making a reception surface for receiving the fluid medium on at least one face of the substrate, putting the fluid medium into contact with the reception surface in order to make an interface between the substrate and the fluid medium, lighting at least one zone of the interface through the fluid medium with a pulsed light beam in order to create photogenerated electric charges, using a microwave reflectometer to measure the lifetime durations of the photogenerated electric charges, which durations have respective values that depend on the recombination rate at the interface between the substrate and the fluid medium, creating a matrix of measured lifetime duration values for the photogenerated electric charges, and using the matrix to determine the electronic signature characteristic of the fluid medium. | 12-10-2015 |
20150362451 | GAS SENSOR PACKAGE - A gas sensor package comprises a gas sensor chip with a layer sensitive to a gas, and with a heater for heating the sensitive layer. Contact pads are provided for electrically contacting the gas sensor package and a die pad is provided for mounting the gas sensor chip to. Electrical connections connect the gas sensor chip and the contact pads. A molding compound at least partially encloses the gas sensor chip. An opening in the molding compound provides access to the sensitive layer of the gas sensor chip. One of the contact pads serves as a pin for supplying electrical current to the heater of the gas sensor chip. | 12-17-2015 |
20160003770 | WIDE DYNAMIC RANGE FLUID SENSOR BASED ON NANOWIRE PLATFORM | 01-07-2016 |
20160011158 | GAS DETECTION SENSOR, DISPLAY PANEL, AND DISPLAY DEVICE | 01-14-2016 |
20160084786 | GAS DETECTING DEVICE AND METHOD THEREOF - A gas detecting method includes heating a gas detector, formed of a gas sensing layer and an adsorption layer, for an oxygen adsorption period t | 03-24-2016 |
20160084787 | Micro Heater and Micro Sensor and Manufacturing Methods Thereof - A micro heater and a micro sensor is capable of providing a heater having a small thermal capacity by forming an air gap which surrounds the heater wire, and forming the heater wire on a porous substrate. | 03-24-2016 |
20160091447 | GAS SENSOR APPARATUS - Provided herein is a gas sensor apparatus including a first sensor unit, second sensor unit, and signal processing unit. The first sensor unit has a channel area doped to an n-type such that it may selectively react to a donor molecule in gas. The second sensor unit has a channel area doped to a p-type such that it may selectively react to an acceptor molecule in gas. The signal processing unit receives a sense signal of the donor molecule from the first sensor unit and a sense signal of the acceptor molecule from the second sensor unit, processes the received sense signals and generates result data of processing the received sense signals. Therefore, the gas sensor apparatus may selectively sense donor gas and acceptor gas. | 03-31-2016 |
20160097731 | SEMICONDUCTOR GAS SENSOR - A semiconductor gas sensor includes a CMOS inverter which is configured by an n-channel field effect transistor having a catalytic gate and a p-channel field effect transistor having the catalytic gate. An input setting gate potential Vin(D) of the CMOS inverter is set to satisfy “Vin(D)=Vtc−ΔVgth” by using the sensor response threshold intensity ΔVgth determined by a concentration of a gas to be detected and a threshold input potential Vtc of the CMOS inverter. Therefore, only by setting the input setting gate potential Vin(D), a warning or an alarm can be issued for the concentration of the gas to be detected. In addition, a temperature compensation of the threshold voltage caused by a MOS structure is reduced regardless of the detection gas by setting a characteristic coefficient β | 04-07-2016 |
20160109399 | VERTICALLY INTEGRATED SYSTEMS - Embodiments of the present invention provide an integrated circuit system including a first active layer fabricated on a front side of a semiconductor die and a second pre-fabricated layer on a back side of the semiconductor die and having electrical components embodied therein, wherein the electrical components include at least one discrete passive component. The integrated circuit system also includes at least one electrical path coupling the first active layer and the second pre-fabricated layer. | 04-21-2016 |
20160169824 | GAS SENSOR AND METHOD FOR MANUFACTURING SAME | 06-16-2016 |