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Semiconductor device manufacturing: process

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
438584000 COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL 3049
438142000 MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS 2760
438689000 CHEMICAL ETCHING 2075
438048000 MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL 1915
438022000 MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL 1816
438106000 PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR 1652
438478000 FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION) 1146
438758000 COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE 1026
438400000 FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE 658
438014000 WITH MEASURING OR TESTING 628
438381000 MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.) 618
438455000 BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES 475
438510000 INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL 466
438460000 SEMICONDUCTOR SUBSTRATE DICING 421
438005000 INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION 416
438003000 HAVING MAGNETIC OR FERROELECTRIC COMPONENT 260
438795000 RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.) 230
438104000 HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT 226
438099000 HAVING ORGANIC SEMICONDUCTIVE COMPONENT 148
438102000 HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT 114
438128000 MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING 88
438004000 REPAIR OR RESTORATION 81
438471000 GETTERING OF SUBSTRATE 80
438309000 FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS 69
438133000 MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.) 50
438021000 MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD 48
438466000 DIRECT APPLICATION OF ELECTRICAL CURRENT 38
438570000 FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT) 27
438020000 ELECTRON EMITTER MANUFACTURE 17
438105000 HAVING DIAMOND SEMICONDUCTOR COMPONENT 14
438001000 HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM 9
438379000 VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.) 8
438800000 MISCELLANEOUS 8
438019000 HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.) 3
20100120179Method of producing prelithiated anodes for secondary lithium ion batteries - A method of producing a lithium-ion battery anode comprising: (a) providing an anode active material; (b) intercalating or absorbing a desired amount of lithium into this anode active material to produce a prelithiated anode active material; (c) comminuting the prelithiated anode active material into fine particles with an average size less than 10 μm (preferably sub-micron and more preferably <200 nm); and (d) combining multiple fine particles of prelithiated anode active material with a conductive additive and/or a binder material to form the anode. The battery featuring such an anode exhibits an exceptionally high specific capacity, an excellent reversible capacity, and a long cycle life.05-13-2010
20120115259METHOD FOR FABRICATING FLEXIBLE ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY - Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating a device such as a secondary battery fabricated on a sacrificial substrate using laser, and an electronic device fabricated thereby.05-10-2012
20120077291OCCUPANCY SENSOR - A method for manufacturing a sensor device (03-29-2012
438141000 MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.) 2
20080286907SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTORS - A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.11-20-2008
20110111564METHOD AND APPARATUS FOR OPTICAL MODULATION - The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.05-12-2011
438002000 HAVING SUPERCONDUCTIVE COMPONENT 1
20110129945SUPERCONDUCTIVITY BASED ON BOSE-EINSTEIN CONDENSATION OF ELECTRON OR ELECTRON-HOLE PAIRS IN SEMICONDUCTORS - The invention describes a method of achieving superconductivity in Group IV semiconductors via the addition of doubly charged impurity atoms to the crystal lattice. The doubly charged impurities function as composite bosons in the semiconductor. Increasing the density of the composite bosons to a level where their wavefunctions overlap, results in the formation of a Bose condensate. The concentration of the doubly charged impurity atoms in the host lattice and the binding energy of the impurities are important factors in determining whether a Bose condensate will form. Doubly charged impurities must be present in the semiconductor at a concentration at which they exhibit overlapping wavefunctions, but still exist within the crystal lattice as bosons.06-02-2011

Patent applications in class Semiconductor device manufacturing: process

Patent applications in all subclasses Semiconductor device manufacturing: process