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Alloys or metallic compositions

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Class / Patent application numberDescriptionNumber of patent applications / Date published
420008000 FERROUS (I.E., IRON BASE) 431
420528000 ALUMINUM BASE 142
420469000 COPPER BASE 130
420441000 NICKEL BASE 112
420402000 MAGNESIUM BASE 71
420417000 TITANIUM BASE 46
420501000 SILVER BASE 41
420580000 CONTAINING OVER 50 PER CENT METAL BUT NO BASE METAL 37
420591000 MISCELLANEOUS 21
420557000 TIN BASE 18
420507000 GOLD BASE 14
420435000 COBALT BASE 12
420463000 PALLADIUM BASE 10
420422000 ZIRCONIUM OR HAFNIUM BASE 8
420416000 RARE EARTH METAL BASE SINGLY OR IN COMBINATION 8
420513000 ZINC BASE 7
420466000 PLATINUM BASE 7
420429000 MOLYBDENUM BASE 6
420461000 OSMIUM OR IRIDIUM BASE 6
420555000 GALLIUM, INDIUM, OR THALLIUM BASE 5
20090196789SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER HAVING SOLDER BUMP - To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.08-06-2009
20090148338Alloy for a Fusible Plug and a Fusible Plug - Problems: A conventional alloy for a fusible plug contained harmful elements such as Cd and Pb, and there was a concern of pollution by these harmful elements. The present invention provides a fusible plug which does not contain the harmful elements Cd and Pb, with which the alloy is not forced out of the fusible plug even when used for long periods as a safety device for refrigeration equipment, and which has a strong mechanical strength such as creep strength.06-11-2009
20100221142REMOVAL OF A SHEET FROM A PRODUCTION APPARATUS - A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.09-02-2010
20100015004LEAD-FREE LOW-TEMPERATURE SOLDER - A conventional low-temperature solder containing Pb or Cd had problems with respect to environmental pollution. A conventional low-temperature lead-free solder had a liquidus temperature which was too high for low heat resistance parts having a heat resistance temperature of 130° C., or it was brittle or had low mechanical strength. A lead-free low-temperature solder according to the present invention comprises 48-52.5 mass % of In and a balance of Bi, and most of the structure is constituted by a BiIn01-21-2010
20100290946METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.11-18-2010
420427000 TANTALUM BASE 5
20090285714Implantable medical Devices Composed of a Radiopaque Alloy and Method of Making the Alloy - Implantable medical devices made from a single beta phase Tantalum alloy utilizing Titanium as an alloying agent that are biocompatible, radiopaque and visible under x-ray and fluoroscopy, the alloy having mechanical properties that allow it to be machined by conventional, machining methods for forming the devices, and a method for making the alloy. The alloy is between approximately 10 percent and 25 percent Ti by weight and preferably has a density of 12 g/cm11-19-2009
20100158747Fine Particle Recovery Methods For Valve Metal Powders - A process and system for producing tantalum or other valve metal particles is provided comprising forming tantalum particles in a reduction process carried out in a reactor vessel, and using a siphon to transfer fine tantalum particles out of the reaction mixture to a recovery vessel. This particle transfer can occur while the reaction mixture is agitated. The tantalum particles can be automatically withdrawn when the reaction mixture has a depth level greater than the fluid level of the tantalum fine particle recovery vessel, and outflow automatically stops when the fluid levels of the reactor and particle recovery vessel equilibrate. Tantalum or other valve metal powders made by the processes, and capacitors made with valve metal powders are also provided.06-24-2010
20090214378METHOD FOR THE PRODUCTION OF VALVE METAL POWDERS - The present invention relates to a process for the deoxidation of valve metal primary powders by means of reducing metals and/or metal hydrides, and a process for the production of tantalum powders that are suitable as anode material for electrolytic capacitors.08-27-2009
20110116965REDUCTION METHOD - Processes comprising: melting a mixture comprising a valve metal precursor and a diluting agent in at least one first vessel under a first set of temperature and residence time conditions; transferring the mixture to at least one second vessel; and initiating, in the at least one second vessel, a reaction of the valve metal precursor to form a valve metal under a second set of temperature and residence time conditions; valve metal powder prepared thereby and uses therefor.05-19-2011
20080267809Tantalum Based Alloy That Is Resistant to Aqueous Corrosion - A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Jr, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.10-30-2008
420425000 NIOBIUM BASE 5
20100086434NIOBIUM ALLOY, SINTERED BODY THEREOF, AND CAPACITOR USING THE SAME - The present invention relates to a niobium alloy for capacitors comprising as an alloy component from 0.01 to 10 atom of at least one element selected from the group consisting of the elements belonging to Groups 2 to 16 of the periodic table and further comprising diniobium mononitride crystals of from 0.1 to 70 mass %, wherein a powder of the niobium alloy has an average particle size of 0.05 to 5 μm and a BET specific surface area of 0.5 to 40 m04-08-2010
20110182766ALLOYS - A first multi phase niobium silicide alloy composition consists essentially of: from 15 to 24 at % of Si; from 0 to 25 at % of one or more sp outer electron configuration element which is not Si; from 1 to 26 at % of one or more sd outer electron configuration element which is not Nb; and a balance of Nb, interstitials and impurities. This alloy may be used to increase the creep resistance of an article, for example a gas turbine engine blade. A second multi phase niobium silicide alloy composition consists essentially of: from 1 to 24 at % of Si; from 0 to 34 at % of one or more sp outer electron configuration element which is not Si; from 19.5 to 48.5 at % of one or more sd outer electron configuration element which is not Nb or Cr; from 0.5 to 9 at % Cr; and a balance of Nb, interstitials and impurities. This alloy may be used to increase the creep resistance and/or to increase the oxidation resistance of an article, for example a gas turbine engine blade.07-28-2011
20130177470ALLOY HAVING REDUCED INCLUSIONS - One aspect is an alloy consisting of niobium, zirconium, tantalum, and tungsten. The alloy is formed with a melt metallurgical route such that all four metals solidify as a homogeneous alloy having no inclusions more than 10 μm in size.07-11-2013
20110194970Production of Nanocrystalline Metal Powders via Combustion Reaction Synthesis - Nanocrystalline metal powders comprising tungsten, molybdenum, rhenium or niobium can be synthesized using a combustion reaction. Methods for synthesizing the nanocrystalline metal powders are characterized by forming a combustion synthesis solution by dissolving in water an oxidizer, a fuel, and a base-soluble, ammonium precursor of tungsten, molybdenum, rhenium, or niobium in amounts that yield a soichiometric burn when combusted. The combustion synthesis solution is then heated to a temperature sufficient to substantially remove water and to initiate a self-sustaining combustion reaction. The resulting powder can be subsequently reduced to metal form by heating in a reducing gas environment.08-11-2011
20110008201NIOBIUM BASED ALLOY THAT IS RESISTANT TO AQUEOUS CORROSION - A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.01-13-2011
420462000 RUTHENIUM OR RHODIUM BASE 5
20090087339METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR - A method for depositing a thin ruthenium (Ru) film on a substrate in a reaction chamber, comprising: step (i) of supplying at least one type of gas of a ruthenium precursor being a β-diketone-coordinated ruthenium complex and causing the gas to be adsorbed to the substrate in the reaction chamber; step (ii) of supplying a reducing gas into the reaction chamber and exciting the reducing gas, or supplying an excited reducing gas into the reaction chamber, in order to activate the ruthenium precursor adsorbed to the substrate; and step (iii) of repeating steps (i) and (ii) to form a thin ruthenium film on the substrate.04-02-2009
20090220374METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.09-03-2009
20090028745RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands.01-29-2009
20090280025High-Purity Ru Alloy Target, Process for Producing the Same, and Sputtered Film - An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target.11-12-2009
20120294753METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION - A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.11-22-2012
420577000 BISMUTH BASE 5
20130078138Bi-Al-Zn-BASED Pb-FREE SOLDER ALLOY - There is provided a Pb-free solder alloy whose residual stress during solidification is small and which achieves high joint strength and high reliability, can suppress a reaction between Ni and Bi or diffusion of Ni when used to join Ni-containing electronic parts or substrates, and can withstand a high reflow temperature.03-28-2013
20130121874Bi-Sn Based High-Temperature Solder Alloy - A high-temperature solder alloy is a Bi—Sn based solder alloy containing at least 90 mass % of Bi, further containing 1-5 mass % of Sn, at least one element selected from Sb and/or Ag each in an amount of 0.5-5 mass %, and preferably further containing 0.0004-0.01 mass % of P.05-16-2013
20130216427LIQUID METAL ION SOURCE AND SECONDARY ION MASS SPECTROMETRIC METHOD AND USE THEREOF - A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ≧190 U and, on the other hand, another metal with an atomic weight ≦90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.08-22-2013
20090129971LEAD-FREE SOFT SOLDER - The invention relates to a soft solder which includes the alloying constituents bismuth and two of the three metals silver, copper and nickel, wherein bismuth forms between 20% by weight and 99.8% by weight of the alloy, silver forms between 0.1% by weight and 50% by weight of the alloy, copper forms between 0.1% by weight and 30% by weight of the alloy and nickel forms between 0.1% by weight and 30% by weight of the alloy.05-21-2009
20130094991Pb-FREE SOLDER ALLOY - Disclosed herein is a high-temperature Pb-free solder alloy having the strength required to join electronic parts to a substrate and having excellence in wettability and workability.04-18-2013
420430000 TUNGSTEN BASE 4
20100260641METHOD OF MAKING A CEMENTED CARBIDE POWDER WITH LOW SINTERING SHRINKAGE AND THE POWDER OBTAINED - A method of making cemented carbide powder with low sintering shrinkage including WC and 4-15 wt-% Co and up to 20 wt-% cubic carbide forming elements from the Groups 4 and 5 of the Periodic Table of the Elements by the powder metallurgical techniques wet milling, pressing and sintering. According to the method wet milling is performed in a rotating ball mill with a ratio between the weight of milling bodies and powder of 2-5. The milling bodies are shaped either as spheres or cylinders with semi-spherical end surfaces. The spherical bodies have a diameter of 10 to 15 mm and the cylindrical bodies have a diameter and height of 10 to 15 mm. The composition of the milling bodies is WC with 6 to 10 wt-% Co. A powder made according to the method is described.10-14-2010
20120020828METHOD OF PREVENTING OXIDATION OF METALS IN THERMAL SPRAYING - The invention relates to a method for preventing the oxidation of metals in thermal spraying by coating the metallic powders to be used with nanocarbides, to a coating achieved using the method as well as to a method for treating the metal powder with nanocarbides. The methods according to the invention are suitable for all metal powders used in thermal spraying and, as the invention enables the use of cheaper materials, they are economically extremely advantageous.01-26-2012
20110243787POWER OF TUNGSTEN ALLOY WITH TRANSITION METAL DISSOLVED THEREIN AS SOLID SOLUTION AND PROCESS FOR PRODUCING THE SAME - This invention is related to a powder of a tungsten alloy with a transition metal dissolved therein as a solid solution that is suitable as material for a cemented carbide represented by formula [1] and a material for a catalyst. The powder of tungsten alloy is characterized in that at least one transition metal element selected from the group consisting of cobalt, iron, manganese and nickel is dissolved as a solid solution in a tungsten grating and a peak derived from a bcc tungsten phase appears in an X-ray diffraction diagram. Formula [1]: M−W wherein M represents one or more elements selected from Co, Fe, Mn and Ni. The use of tungsten alloy powder can provide a tungsten carbide with a transition metal dissolved therein as a solid solution in which a solid solution phase comprising at least one transition metal element selected from the group consisting of cobalt, iron, manganese and nickel, tungsten and carbon is included in a tungsten carbide skeleton, and a tungsten carbide diffused cemented carbide.10-06-2011
20120251380RECYCLING OF TUNGSTEN CARBIDES - The invention relates to a process for producing an iron-and/or tungsten containing powder or powder agglomerate including the steps of: a) mixing at least a first powder fraction comprising a tungsten carbide containing powder, and at least a second powder fraction comprising an iron oxide powder and/or a tungsten oxide containing powder and optionally an iron powder, the weight of the first fraction being in the range of 50-90% by weight of the mix and the weight of the second fraction being in the range of 10-50% by weight of the mix, b) heating the mix of step a) to a temperature in the range of 400-1300° C., preferably 1000-1200° C. The invention also relates to an iron-and/or tungsten containing powder or powder agglomerate.10-04-2012
420578000 SILICON BASE ALLOY CONTAINING METAL 3
20090185947SILICON ALLOY, ALLOY POWDER THEREOF, MANUFACTURING APPARATUS, MANUFACTURING PROCESS AND SINTERED ALLOY THEREOF - A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen.07-23-2009
20100178195METHOD OF SOLIDIFYING METALLIC SILICON - A method of solidifying metallic silicon, characterized by monodirectionally solidifying a metallic silicon of 800 ppm or less iron concentration. Any metal impurity components of the metallic silicon can be effectively removed with reduced cost through shortened steps.07-15-2010
20110044845'KAZAKHSTANSKIY' ALLOY FOR STEEL DEOXIDATION AND ALLOYING - The invention relates to ferrous metallurgy, in particular to producing an alloy for reducing, doping and modifying steel. The invention makes it possible to improve the quality of the steel treated with the inventive alloy owing to the deep reduction and modification of non-metallic impurities and the simultaneous microalloying of steel with barium, titanium and vanadium. Barium, titanium and vanadium are added into the inventive alloy, which contains aluminium, silicium, calcium, carbon and iron, with the following component ratio, in mass %: 45.0-63.0 silicium, 10.0-25.0 aluminium, 1.0-10.0 calcium, 1.0-10.0 barium, 0.3-0.5 vanadium, 1.0-10.0 titanium, 0.1-1.0 carbon, the rest being iron.02-24-2011
420579000 ARSENIC BASE OR SELENIUM OR TELLURIUM BASE ALLOY CONTAINING METAL 3
20120288403GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME - The present invention provides a GaAs single crystal wafer and a method of manufacturing the same, wherein the wafer is characterized in that, when the strain in the radial direction in the GaAs single crystal wafer is expressed as Sr and the strain in the tangential direction on the circumference of the same is expressed as St, the residual stress in a wafer plane of the semi-insulating GaAs wafer denoted by |Sr−St| is smaller than 1.0×1011-15-2012
20110318221METHOD OF CUTTING SINGLE CRYSTALS - An embodiment of the invention provides a single crystal cleaved from a larger crystal and having a cleavage surface that extends along a natural crystallographic plane of the single crystal, the cleavage surface produced by generating a stress field to propagate a crack in the larger crystal along the natural plane, so that during cracking by the stress field a magnitude of a derivative of an energy release rate, G(α), generated by the stress field at a front of the crack as a function of angular deviation, α, from the natural plane, is less than or equal to twice an effective step energy, β12-29-2011
20120282133CRYSTAL GROWTH APPARATUS AND METHOD - Systems and methods are disclosed for crystal growth using VGF and VB growth processes to reduce body lineage. In one exemplary embodiment, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical gradient freeze process wherein the crystallizing temperature gradient is moved relative to the crystal and/or furnace to melt the raw material and reform it as a monocrystalline compound, and growing the crystal using a vertical Bridgman process on the wherein the ampoule/heating source are moved relative each other to continue to melt the raw material and reform it as a monocrystalline compound.11-08-2012
420590000 PROCESSES 3
20100098581REVERT BLEND ALGORITHM - A revert alloy is used in the manufacture of a target alloy having a different composition. The weight percent of the elemental constituents of this first alloy and a second or target alloy are obtained, and the ratio of the percentage by weight of each elemental constituent in the first alloy to the second alloy is determined. The lowest ratio is used to determine the amount of the first alloy that is melted and the necessary elemental constituents that are added to the melt to produce the desired composition of the target alloy. The melt is solidified to produce the target alloy.04-22-2010
20100068091MULTI-COMPONENT COMPOSITION METAL INJECTION MOLDING - A metal alloy feedstock and method for metal injection molding is disclosed. The alloy includes at least two components, such as a first component and a second component. The first component has a first melting point and the second component has a second melting point higher than the first melting point. The first melting point and the second melting point match to the temperature gradient of the heated barrel of an injection molding machine whereby when fed into the injection molding machine the first component melts prior to the second component melts and enables the second component to solute into the first component. Additional components may also be used.03-18-2010
20080199350Metastable beta-titanium alloy - Metastable β-titanium alloy contains, in mass %: from 1.5 to 3.5 aluminum; from 4.5 to 8.0 molybdenum; from 1.0 to 3.5 vanadium; from 1.5 to 3.8 iron; titanium balance. This alloy combines high strength and ductility. This allows to use it for production of a wide range of critical parts including fastener components and different coil springs (e.g. in automobile industry).08-21-2008
420001000 RADIOACTIVE 2
20100104467PRODUCTION OF THORIUM 228 STARTING FROM A NATURAL THORIUM SALT - The invention relates to a process for producing 04-29-2010
20100202915MOLECULE FOR FUNCTIONALIZING A SUPPORT, ATTACHMENT OF A RADIONUCLIDE TO THE SUPPORT AND RADIONUCLIDE GENERATOR FOR PREPARING THE RADIONUCLIDE, AND PREPARATION PROCESS - Molecule for attaching a radioactive parent nuclide to a support, comprising at least one functional group for attaching the radioactive parent nuclide; and a molecular moiety suitable for establishing a nonpolar bond to the support.08-12-2010
420433000 RHENIUM BASE 2
20120244032METHOD AND APPARATUS FOR LASER ABLATION - In order to produce a coating on a substrate, the substrate is placed adjacent to a target. Material is cold ablated off the target by focusing a number of consecutive laser pulses on the target, thus producing a number of consecutive plasma fronts that move at least partly to the direction of said substrate. The time difference between said consecutive laser pulses is so short that constituents resulting from a number of consecutive plasma fronts form a nucleus on a surface of the substrate where a mean energy of said constituents allows the spontaneous formation of a crystalline structure.09-27-2012
20110229366METHOD FOR RECOVERING RHENIUM AND OTHER METALS FROM RHENIUM-BEARING MATERIALS - The present invention relates to a method of recovering rhenium (Re) and other metals from Re-bearing materials.09-22-2011
420556000 GERMANIUM BASE 2
20090297395Methods of treating semiconducting materials and treated semiconducting materials - A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed.12-03-2009
20110176958SINTERED COMPACT, PROCESS FOR PRODUCTION THEREOF, AND OPTICAL ELEMENT - There is provided a sintered body that does not readily deform during use and that allows a high flexibility for the design of surface layers, a method for manufacturing the sintered body, and an optical component including the sintered body. The method for manufacturing a sintered body includes a sintered body having a predetermined shape, the sintered body having a ceramic base material, the method for manufacturing a sintered body comprising a step for preparing a ceramic preform, a step for using a predetermined mold having an upper die and a lower die to hot-press the ceramic preform to form a pressure-sintered body, and a step for cooling the pressure-sintered body while applying a pressure load of approximately 5% or more and 100% or less (and preferably approximately 20% or more and 40% or less) of the pressure load applied during the step for forming the pressure-sintered body.07-21-2011
420576000 ANTIMONY BASE 2
20100111754Potassium and Sodium Filled Skutterudites - Interstitial voids of the cubic CoSb05-06-2010
20130156636SEMI-HEUSLER/HEUSLER ALLOYS HAVING TAILORED PHASE SEPARATION - An inorganic, intermetallic compound contains at least two elements per formula unit and consists of at least two phases, at least one phase being semiconducting or semimetallic, these at least two phases are immiscible with each other and are thermodynamically stable, so as to allow the thermal conductivity of semi-Heusler alloys to be reduced while at the same time maintaining the electrical conductivity and the thermoelectric voltage.06-20-2013
420428000 CHROMIUM BASE 2
20090068055Processing of powders of a refractory metal based alloy for high densification - A powder metallurgy method of making a chromium base alloy includes blending a first powder comprising a chromium powder and a second powder comprising at least one of titanium, titanium hydride, zirconium or zirconium hydride, annealing the first powder and the second powder in a reducing atmosphere after the step of mixing, compacting a blend of the first and the second powders, and sintering the compacted blend to form a chromium base alloy. The chromium alloy may be used as an interconnect for a solid oxide fuel cell, and includes least one of iron or nickel greater than zero and equal to or less than 7 weight percent, yttria greater than zero and equal to or less than 2 weight percent, at least one of titanium or zirconium greater than zero and equal to or less than 1 weight percent and at least 90 weight percent chromium.03-12-2009
20100278686PROCESS FOR RECOVERING METALS AND METAL COMPOUNDS FROM MINED ORE AND OTHER METAL-BEARING RAW SOURCE MATERIALS - A method for selectively recovering a metal from mined ore and other metal-bearing raw source materials is disclosed. The method involves mixing with an aqueous medium a metal-bearing ore and/or other raw source material containing a first metal in an insoluble form, insoluble and/or soluble Cr in a Cr bearing material as a second metal, and organic and inorganic compounds to obtain a slurry containing the first metal in an insoluble form, insoluble and/or soluble Cr compound(s), and the organic and inorganic compounds; adjusting the pH of the slurry to an optimal range for Cr oxidation to convert Cr to an insoluble form; optionally adding a first oxidizer to the slurry to oxidize organic and inorganic compounds; selectively leaching the Cr by adding a leaching agent in an amount sufficient to obtain Cr in a soluble form while the first metal remains in the slurry in an insoluble form; filtering the slurry to obtain a filter cake containing the first metal in an insoluble form and a filtrate containing Cr in a soluble form; and recovering the filter cake containing the first metal in an insoluble form and/or filtrate containing Cr in a soluble form.11-04-2010
420400000 ALKALI METAL BASE 2
20100111750METHODS FOR INTRODUCTION OF A REACTIVE MATERIAL INTO A VACUUM CHAMBER - Methods for the introduction of a reactive material into a vacuum chamber while minimizing or eliminating the simultaneous introduction of contaminating materials or substances. As a result, contaminating materials and substances that can interfere with any measurements or other processes that occur in the vacuum chamber are minimized or eliminated.05-06-2010
20090041614Silica gel compositions containing alkali metals and alkali metal alloys - The invention relates to Group 1 metal/silica gel compositions comprising silica gel and an alkali metal or an alkali metal alloy. The compositions of the inventions are described as Stage 0, I, II, and III materials. These materials differ in their preparation and chemical reactivity. Each successive stage may be prepared directly using the methods described below or from an earlier stage material. Stage 0 materials may, for example, be prepared using liquid alloys of Na and K which are rapidly absorbed by silica gel (porous SiO02-12-2009
420401000 BERYLLIUM BASE 1
20130216424REDUCED BERYLLIUM CASTING ALLOY - The beryllium content of beryllium aluminum alloys suitable for investment casting which contain a small but suitable amount of silver can be significantly reduced without adversely affecting their thermal or investment casting properties by including significantly more silicon in the alloy than done in the past.08-22-2013
420563000 LEAD BASE 1
20100303668FUSIBLE ALLOY FOR PRESSURE RELIEF DEVICES - The present invention relates to a fusible alloy for pressure relief devices (PRDs), and the present invention provides a fusible alloy for PRD, the alloy comprising 29.0 to 33.0% by weight of Bi, 14.0 to 21.0% by weight of Sn, 2.0 to 5.0% by weight of In, and substantially Pb for the balance.12-02-2010

Patent applications in class Alloys or metallic compositions

Patent applications in all subclasses Alloys or metallic compositions