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Class / Patent application numberDescriptionNumber of patent applications / Date published
365185010 FLOATING GATE 3904
365189011 READ/WRITE CIRCUIT 3524
365230010 ADDRESSING 504
365226000 POWERING 356
365106000 RADIANT ENERGY 19
20090168485PIPE LATCH DEVICE OF SEMICONDUCTOR MEMORY DEVICE - A pipe latch device includes an output controller for outputting first and second output control signal groups based on a DLL clock signal and a driving signal; an input controller for generating an input control signal group; and a pipe latch unit for latching data on a data line when a corresponding input control signal is activated, and outputting latched data when a corresponding output control signal is activated, wherein the output controller includes a plurality of shifters, each for delaying an input data signal by half clock and one clock to output a first and second output signals in synchronization with the DLL clock signal and the driving signal; and a plurality of output control signal drivers for outputting the first and second output control signal groups based on the first and second output signals.07-02-2009
20080239784HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS - A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a single write wire having a longitudinal axis substantially orthogonal to a longitudinal axis of each of the coplanar shift register structures.10-02-2008
20110267868SHIFT REGISTER MEMORY DEVICE, SHIFT REGISTER, AND DATA STORAGE METHOD - According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors. A first force acts to urge the characteristic directions to be opposingly parallel for two of the rotors belonging to the same pair. A second force acts to urge the characteristic directions to be opposingly parallel for two mutually adjacent rotors belonging to mutually adjacent pairs.11-03-2011
20100290263CIRCUIT AND METHOD FOR CONTROLLING READ CYCLE - A circuit for controlling the read cycle includes plurality of shift stages configured to sequentially shift read signals; and an activating unit configured to activate a read cycle signal which represents a read cycle, by performing logical operation for output signals of the plurality of the shift stages, wherein the plurality of the shift stages are configured to sequentially shift the read signals for a period corresponding to burst setting information.11-18-2010
20090168589Thermal code transmission circuit and semiconductor memory device using the same - Disclosed are a thermal code transmission circuit and a semiconductor memory device using the same. The thermal code transmission circuit includes a select signal generator which generates a select signal in response to a first enable signal, a level signal generator which receives the first enable signal to generate a level signal, an update signal generator which receives the level signal and a first update signal to generate a second update signal, a latch unit which receives a thermal code in response to the second update signal and outputs the thermal code as an output thermal code, and a thermal code output unit which selectively outputs the output thermal code in response to the select signal.07-02-2009
20100232251METHOD AND SYSTEM FOR CODING AND READ OUT OF INFORMATION IN A MICROSCOPIC CLUSTER COMPRISING COUPLED FUNCTIONAL ISLANDS - A method and a system for coding and reading out information in a microscopic cluster formed with coupled functional islands includes: generating the cluster by forming a regular microscopic pattern for locating the functional islands; making use of a physical or chemical property of each individual island and making use of the coupling between the functional islands; assigning different information to different energy levels of the cluster; effecting a change of the physical or chemical property of at least one functional island in order to change the energy level of the cluster to the energy level equivalent to the information content to be coded; and reading out the information. These measures allow forming a cluster having distinct energy levels, each being assigned to a distinct information content. These systems pave the way for future devices based on clusters of coupled islands and, armed with the complete knowledge of the energy states, the door is opened for use of these finite multistate clustered structures in future spintronic devices, for example for data storage, memory applications or to perform logic operations.09-16-2010
20130070510METHOD FOR READING A HOLOGRAPHIC MEMORY ON A DATA MEDIUM - The embodiments of this invention also describe to a data medium comprising 03-21-2013
20110026296Nonvolatile Optical Memory Element, Memory Device, and Reading Method Thereof - A nonvolatile optical memory element in which a ferromagnetic body is provided on a semiconductor causes such a problem that in a case where magnetization of the ferromagnetic body is read by light, magneto-optical response becomes very small when the ferromagnetic body is small in volume. The present invention provides a memory element, a memory device, and a data reading method, each of which is applicable to data reading from a nonvolatile optical memory element. In a nonvolatile optical memory element having a structure in which a ferromagnetic body is provided on a semiconductor that is connected to an optical waveguide, electrons are injected into the semiconductor via the ferromagnetic body so that the electrons that are spin-polarized according to a magnetization direction of the ferromagnetic body are injected into the semiconductor, thereby enlarging a region in which a photomagnetic effect occurs effectively. By applying an electric pulse and an optical pulse to the nonvolatile optical memory element, it is possible to effectively read recorded data according to a magnetization direction of the ferromagnetic body.02-03-2011
20110261602MAGNETIC MEMORY DEVICES AND SYSTEMS - A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm.10-27-2011
20080205110Digital Magnetic Current Sensor and Logic - A sensor for sensing magnetic field strength has a sensor element, and detection circuitry for detecting a level of resistance of the sensor element, the level of resistance varying with magnetic field under test and having hysteresis, so that upon electromagnetic excitation the resistance can switch between two or more stable levels as the magnetic field under test varies. The sensor outputs a digital signal according to the level of resistance. The sensor output may further be interpreted in terms of a change-of-state upon electromagnetic excitation. As the sensor no longer needs a different characteristic from magnetic memory cells, it can be much easier to construct and to integrate with magnetic memory cells than an analog sensor. An excitation signal varies a threshold for the magnetic field under test at which the resistance switches, to enable multiple measurements with different thresholds. Multiple sensor elements can have different thresholds, by having differing geometry or size. It has applications in current sensing, and programmable magnetic logic, when multiple input currents are sensed. Changing the threshold can change the logic operation between AND and OR.08-28-2008

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