| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257213000 |
FIELD EFFECT DEVICE
| 11012 |
| 257079000 |
INCOHERENT LIGHT EMITTER STRUCTURE
| 6318 |
| 257734000 |
COMBINED WITH ELECTRICAL CONTACT OR LEAD
| 6210 |
| 257414000 |
RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)
| 3055 |
| 257049000 |
NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)
| 2562 |
| 257040000 |
ORGANIC SEMICONDUCTOR MATERIAL
| 2466 |
| 257678000 |
HOUSING OR PACKAGE
| 2432 |
| 257499000 |
INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS
| 2346 |
| 257009000 |
THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE)
| 1901 |
| 257076000 |
SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS
| 1549 |
| 257001000 |
BULK EFFECT DEVICE
| 1445 |
| 257666000 |
LEAD FRAME
| 1241 |
| 257183000 |
HETEROJUNCTION DEVICE
| 1149 |
| 257043000 |
SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE
| 1061 |
| 257618000 |
PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
| 895 |
| 257107000 |
REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)
| 564 |
| 257048000 |
TEST OR CALIBRATION STRUCTURE
| 465 |
| 257629000 |
WITH MEANS TO CONTROL SURFACE EFFECTS
| 401 |
| 257202000 |
GATE ARRAYS
| 341 |
| 257659000 |
WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)
| 324 |
| 257613000 |
INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE)
| 265 |
| 257787000 |
ENCAPSULATED
| 248 |
| 257565000 |
BIPOLAR TRANSISTOR STRUCTURE
| 143 |
| 257471000 |
SCHOTTKY BARRIER
| 125 |
| 257487000 |
WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD
| 97 |
| 257797000 |
ALIGNMENT MARKS
| 93 |
| 257655000 |
WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT
| 68 |
| 257607000 |
WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)
| 57 |
| 257664000 |
TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.)
| 43 |
| 257617000 |
INCLUDING REGION CONTAINING CRYSTAL DAMAGE
| 42 |
| 257595000 |
VOLTAGE VARIABLE CAPACITANCE DEVICE
| 32 |
| 257042000 |
SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM
| 25 |
| 257104000 |
TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE
| 19 |
| 257798000 |
MISCELLANEOUS
| 19 |
| 257603000 |
AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
| 19 |
| 257603000 |
AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
| 15 |
| 257653000 |
WITH SPECIFIED SHAPE OF PN JUNCTION
| 13 |
| 257665000 |
CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS
| 9 |
| 257594000 |
WITH GROOVE TO DEFINE PLURAL DIODES | 2 |
| 20110304020 | WAFER LEVEL DIODE PACKAGE STRUCTURE - A wafer level vertical diode package structure includes a first semiconductor layer, a second semiconductor layer, an insulative unit, a first conductive structure, and a second conductive structure. The second semiconductor layer is connected with one surface of the first semiconductor layer. The insulative unit is disposed around a lateral side of the first semiconductor layer and a lateral side of the second semiconductor layer. The first conductive structure is formed on a top surface of the first semiconductor layer and on one lateral side of the insulative layer. The second conductive structure is formed on a top surface of the second semiconductor layer and on another opposite lateral side of the insulative layer. | 12-15-2011 |
| 20090085163 | VERTICAL DIODE USING SILICON FORMED BY SELECTIVE EPITAXIAL GROWTH - Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus. | 04-02-2009 |
| 257497000 |
PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) | 2 |
| 20110278694 | BIPOLAR PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE - A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact. One of the layers in the two-layer structure is a base layer of the first conductivity type. A buffer layer of the first conductivity type is arranged on the base layer. A first layer includes alternating first regions of the first conductivity type and second regions of the second conductivity type. The first layer is arranged between the buffer layer and the second electrical contact. The second regions are activated regions with a depth of at maximum 2 μm and a doping profile, which drops from 90% to 10% of the maximum doping concentration within at most 1 μm. | 11-17-2011 |
| 20120319227 | BIPOLAR PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE - A bipolar diode is provided having a drift layer of a first conductivity type on a cathode side and an anode layer of a second conductivity type on an anode side. The anode layer includes a diffused anode contact layer and a double diffused anode buffer layer. The anode contact layer is arranged up to a depth of at most 5 μm, and the anode buffer layer is arranged up to a depth of 18 to 25 μm. The anode buffer layer has a doping concentration between 8.0*10 | 12-20-2012 |
| 257044000 |
WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE | 2 |
| 20090250696 | NEAR NATURAL BREAKDOWN DEVICE - A semiconductor device includes a semiconductor region wherein the semiconductor region is a forced or non-forced Near Natural breakdown region, which is completely depleted when a predetermined voltage having a magnitude less than or equal to the breakdown voltage of a non-Natural breakdown (for example, Zener breakdown and Avalanche breakdown) is applied across the device. | 10-08-2009 |
| 20100072472 | Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differential Resistance and Method for Making These Nanostructures - Nanostructures with 0, 1, 2 and 3 dimensions, with negative differential resistance and method for making these nanostructures. A nanostructure according to the invention may notably be used in nanoelectronics. It comprises at least one structure ( | 03-25-2010 |
| 257212000 |
CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR) | 1 |
| 20080315260 | Diode Structure - An open-base semiconductor diode device has an emitter, base, and collector layers. The layers are configured and doped such that the device has an IV characteristic with: i. a punchthrough region beginning at a voltage V | 12-25-2008 |
| 257041000 |
POINT CONTACT DEVICE | 1 |
| 20110049505 | DEVICES AND METHOD FOR MANUFACTURING A DEVICE - A device includes a first semiconductor chip and a second semiconductor chip which are connected to each other in an electrically conductive manner via a bonding wire, the bonding wire having a contact to the first semiconductor chip at a first contact point and having a contact to the second semiconductor chip at a second contact point, and the device including a further bonding wire which has a further first contact point and a further second contact point, a maximum distance between the bonding wire and a direct connecting line between the first and second contact points perpendicular to the connecting line being greater than a further maximum distance between the further bonding wire and a further connecting line between the further first contact point and the further second contact point perpendicular to the further connecting line. | 03-03-2011 |
| 257E21001 |
PROCESSES OR APPARATUS ADAPTED FOR MANUFACTURE OR TREATMENT OF SEMICONDUCTOR OR SOLID-STATE DEVICES OR OF PARTS THEREOF (EPO) | 1 |
| 20090289379 | Methods of Manufacturing Semiconductor Devices and Structures Thereof - Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material. | 11-26-2009 |
