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Etching a substrate: processes

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
216058000 GAS PHASE ETCHING OF SUBSTRATE 395
216013000 FORMING OR TREATING ELECTRICAL CONDUCTOR ARTICLE (E.G., CIRCUIT, ETC.) 373
216041000 MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST) 215
216083000 NONGASEOUS PHASE ETCHING OF SUBSTRATE 196
216022000 FORMING OR TREATING ARTICLE CONTAINING MAGNETICALLY RESPONSIVE MATERIAL 164
216024000 FORMING OR TREATING OPTICAL ARTICLE 80
216037000 ETCHING AND COATING OCCUR IN THE SAME PROCESSING CHAMBER 79
216052000 MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE 58
216027000 FORMING OR TREATING THERMAL INK JET ARTICLE (E.G., PRINT HEAD, LIQUID JET RECORDING HEAD, ETC.) 53
216033000 ADHESIVE OR AUTOGENOUS BONDING OF TWO OR MORE SELF-SUSTAINING PREFORMS WHEREIN AT LEAST TWO OF THE PREFORMS ARE NOT INTENDED TO BE REMOVED (E.G., PREFABRICATED BASE, ETC.) 51
216011000 FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION 51
216056000 ETCHING TO PRODUCE POROUS OR PERFORATED ARTICLE 18
216012000 FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.) 18
216038000 PLANARIZING A NONPLANAR SURFACE 15
216006000 FORMING OR TREATING MATERIAL USEFUL IN A CAPACITOR 14
216039000 FORMING GROOVE OR HOLE IN A SUBSTRATE WHICH IS SUBSEQUENTLY FILLED OR COATED 11
216002000 ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION 11
216057000 GAS PHASE AND NONGASEOUS PHASE ETCHING ON THE SAME SUBSTRATE 10
216023000 FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL 9
216040000 FORMING PATTERN USING LIFT OFF TECHNIQUE 9
216008000 FORMING OR TREATING CYLINDRICAL OR TUBULAR ARTICLE HAVING PATTERN OR DESIGN ON ITS SURFACE 8
216054000 PATTERN OR DESIGN APPLIED BY TRANSFER 7
216028000 FORMING OR TREATING AN ORNAMENTED ARTICLE 6
216055000 HEATING OR BAKING OF SUBSTRATE PRIOR TO ETCHING TO CHANGE THE CHEMICAL PROPERTIES OF SUBSTRATE TOWARD THE ETCHANT 4
20130026134COPPER OXIDE ETCHANT AND ETCHING METHOD USING THE SAME - In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.01-31-2013
20120223053Thermal Anneal of Block Copolymer Films with Top Interface Constrained to Wet Both Blocks with Equal Preference - Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.09-06-2012
20090039057Method of increasing etchability of metals having chemical etching resistant microstructure - A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.02-12-2009
20130008870METHOD FOR PROCESSING OUTER PERIPHERY OF SUBSTRATE AND APPARATUS THEREOF - To make an arrangement so as not to give any damage to the central part of a substrate during the operation for removing unnecessary film coated on the outer peripheral part of the substrate. The stage is provided therein with a refrigerant chamber 01-10-2013
216007000 FORMING OR TREATING FIBROUS ARTICLE OR FIBER REINFORCED COMPOSITE STRUCTURE 2
20090301993Method for fabricating carbon nanotube film - A method for making a carbon nanotube film includes the steps of providing an array of carbon nanotubes, treating the array of carbon nanotubes by plasma, and pulling out a carbon nanotube film from the array of carbon nanotubes treated by the plasma.12-10-2009
20110163061Method Of Producing Microsprings Having Nanowire Tip Structures - A stress-engineered microspring is formed generally in the plane of a substrate. A nanowire (or equivalently, a nanotube) is formed at the tip thereof, also in the plane of the substrate. Once formed, the length of the nanowire may be defined, for example photolithographically. A sacrificial layer underlying the microspring may then be removed, allowing the engineered stresses in the microspring to cause the structure to bend out of plane, elevating the nanowire off the substrate and out of plane. Use of the nanowire as a contact is thereby provided. The nanowire may be clamped at the tip of the microspring for added robustness. The nanowire may be coated during the formation process to provide additional functionality of the final device.07-07-2011

Patent applications in class Etching a substrate: processes

Patent applications in all subclasses Etching a substrate: processes