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Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
117011000 PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE 345
117084000 FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) 214
117200000 APPARATUS 121
117003000 PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATING OR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTAL 17
117004000 PROCESSES OF GROWTH FROM SOLID OR GEL STATE (E.G., SOLID PHASE RECRYSTALLIZATION) 12
117002000 PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING) 8
117001000 PROCESSES JOINING INDEPENDENT CRYSTALS 2
20080282967Crystal Growth Method and Apparatus - A method for forming a uniformly oriented crystalline sheet, wherein a plurality of crystallites are introduced into a liquid. At least a portion of the crystallites float on the surface of the liquid, and are induced to self-orientate until they are uniformly oriented in a compact mosaic configuration, while their sintering is prevented. A uniformly oriented crystalline sheet is formed from the compact mosaic configuration, for example, by sintering the crystallites. An apparatus for forming a crystalline sheet includes a container containing a liquid, wherein a plurality of crystallites are introduced and at least a portion thereof float on the surface of the liquid without sintering. The apparatus also includes a flow unit for inducing a flow of the liquid which moves the floating crystallites, and self-orientation means for allowing self-orientation of the floating crystallites, without sintering, until the floating crystallites are uniformly oriented in a compact mosaic configuration, ready for forming a uniformly oriented crystalline sheet, for example, by sintering the crystallites.11-20-2008
20090114146Method for Manufacturing Semiconductor Device and Substrate Processing Apparatus - To provide a method for manufacturing a semiconductor device and a substrate processing apparatus which contribute to forming high-density nuclei. The method for manufacturing a semiconductor device according to the invention includes the steps of: carrying a wafer 05-07-2009

Patent applications in all subclasses Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor