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YONSEI UNIVERSITY

YONSEI UNIVERSITY Patent applications
Patent application numberTitlePublished
20090265678System and Method of Resistance Based Memory Circuit Parameter Adjustment - Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter.10-22-2009
20090214530MODIFIED CpG OLIGODEOXYNUCLEOTIDE WITH IMPROVED IMMUNOREGULATORY FUNCTION - The present invention relates to a modified CpG oligodeoxynucleotide (ODN) which is prepared by coupling a consecutive sequence of deoxyribothymine (dT) to the 3′-terminus of CpG ODN having immunoregularory function, thereby improving immunoactivity of splenocytes, macrophages and peripheral mononuclear cells, and therefore, can be effectively used as a vaccine adjuvant for preventing and treating hepatitis B or an anticancer agent. Since the phosphorothioate CpG ODN having the consecutive sequence of dT at its 3′-terminus shows high activity inducing Th-1 immune response and does not elicit in vivo toxicity with guaranteeing its safety, it can be effectively used as a vaccine adjuvant.08-27-2009

Patent applications by YONSEI UNIVERSITY