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YADAV TECHNOLOGY
| YADAV TECHNOLOGY Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20080246104 | High Capacity Low Cost Multi-State Magnetic Memory - One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states. | 10-09-2008 |
| 20080225585 | Low Cost Multi-State Magnetic Memory - An embodiment of the present invention includes a multi-state current-switching magnetic memory element having a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer. | 09-18-2008 |