20090191690 | Increasing Die Strength by Etching During or After Dicing - A semiconductor wafer having an active layer is mounted on a carrier with the active layer away from the carrier and at least partially diced on the carrier from a major surface of the semiconductor wafer. The at least partially diced semiconductor wafer is etched on the carrier from the said major surface with a spontaneous etchant to remove sufficient semiconductor material from a die produced from the at least partially diced semiconductor wafer to improve flexural bend strength of the die by removing at least some defects caused by dicing. | 07-30-2009 |