| XINTEC, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120125668 | WIRING STRUCTURE FOR IMPROVING CROWN-LIKE DEFECT AND FABRICATION METHOD THEREOF - A wiring structure for improving a crown-like defect and a fabrication method thereof are provided. The method includes the following steps. A substrate, on which a seed layer and a patterned photoresist layer with an opening are formed, is provided. A copper layer, having a bottom covering the seed layer, is formed in the opening. A barrier layer covering at least one top portion of the copper layer is formed on the copper layer. An oxidation potential of the barrier layer is greater than that of the copper layer. The patterned photoresist layer is removed to perform an etching process, wherein the copper layer and a portion of the seed layer exposed are etched to form a wiring layer. An immersion process is performed to form an anti-oxidation layer comprehensively on exposed surfaces of the barrier layer and the wiring layer. | 05-24-2012 |
| 20100055843 | CHIP PACKAGE MODULE HEAT SINK - A heat sink mechanism including multiple heat passages in the base of a casing of a chip package module penetrating through a substrate packed in the module; a metal material being deposited in each heat passage to become a heat sink conductor connecting the substrate and the surface of the casing to effectively solve the problem of excessive heat generated in the course of HF operation of the chip package module thus to prevent chip failure. | 03-04-2010 |
| 20090289318 | ELECTRONICS DEVICE PACKAGE AND FABRICATION METHOD THEREOF - Embodiments provide an electronic device package and a method for fabricating thereof. A semiconductor chip has a substrate. A supporting brick is separated from the substrate by a certain distance. A bonding pad having a surface is disposed across the substrate and the supporting brick. | 11-26-2009 |
| 20090283877 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device and manufacturing method thereof are disclosed. The device comprises a semiconductor die, a passivation layer, a wiring redistribution layer (RDL), an Ni/Au layer, and a solder mask. The semiconductor die comprises a top metal exposed in an active surface thereof. The passivation layer overlies the active surface of the semiconductor die, and comprises a through passivation opening overlying the top metal. The wiring RDL, comprising an Al layer, overlies the passivation layer, and electrically connects to the top metal via the passivation opening. The solder mask overlies the passivation layer and the wiring RDL, exposing a terminal of the wiring RDL. | 11-19-2009 |
