| XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. Patent applications |
| Patent application number | Title | Published |
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| 20110303895 | VERTICAL LIGHT-EMITTING DIODE - A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer. The barrier prevents the metal particles in chip dicing and the conductive adhesive in packaging from reaching the semiconductor light-emitting layer, thereby providing short circuit protection and improving the reliability of the vertical light-emitting diode. | 12-15-2011 |
| 20110297914 | GALLIUM NITRIDE-BASED FLIP-CHIP LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS ON ITS SIDE AND FABRICATION METHOD THEREOF - The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED. | 12-08-2011 |
| 20110278619 | QUATERNARY VERTICAL LIGHT EMITTING DIODE WITH DOUBLE SURFACE ROUGHENING AND MANUFACTURING METHOD THEREOF - The present invention discloses a quaternary vertical light emitting diode with double surface roughening and a manufacturing method thereof, where a Bragg reflective layer is formed on a substrate; a first type of epitaxial layer is formed on the Bragg reflective layer; a light emitting layer is formed on the first type of epitaxial layer; a second type of epitaxial layer is formed on the light emitting layer; a first GaP window layer with small circular holes or in a mesh structure is formed on the second type of epitaxial layer; a second GaP window layer with small circular holes or in a mesh structure is formed on the first GaP window layer; a first electrode is formed on the top surface of the second GaP window layer; and a second electrode is formed on the bottom surface of the GaAs substrate. After conventional processes, the invention forms the alternating small circular holes or the mesh structure between the first GaP window layer and the second GaP window layer to change a light path along which light emitting from the light emitting layer reaches the surface of a light emitting diode die so that more of light emits from inside and the light extracting rate of the invention is 20% higher than that of an existing light emitting diode. | 11-17-2011 |
| 20110272724 | ALGAINP-BASED LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS AND FABRICATION METHOD THEREOF - The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips. The AlGaInP-based LED with both the distributed Bragg reflector and the reflective metal layer according to the invention can fully utilize good reflectivity of the reflective layers to the extreme, and improve the light-emission efficiency of the AlGaInP-based LED effectively. | 11-10-2011 |
| 20110076791 | METHOD FOR MANUFACTURING GaN-BASED FILM LED - A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink. | 03-31-2011 |
| 20110057199 | Antistatic Gallium Nitride Based Light Emitting Device and Method for Fabricating the Same - The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same. The method includes: growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer sequentially on a substrate; etching to remove parts of the layers above, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; etching to remove a part of the undoped GaN-based epitaxial layer; forming an ohmic contact electrode on an exposed part of p-type GaN-based epitaxial layer, and forming a Schottky contact electrode on another part; forming a p-electrode on a transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; forming an n-electrode on the exposed n-type GaN-based epitaxial layer; and forming a connecting conductor on an insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode. By forming a GaN Schottky diode directly on a p-type GaN-based epitaxial layer, the fabrication process is simplified while providing antistatic ability at the same time, and the emitting area is made the maximum use of so as to avoid the drop in the luminous efficiency of the GaN-based LED. | 03-10-2011 |
