20140322900 | LOW-PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS AND THIN-FILM DEPOSITION METHOD THEREOF - A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part. | 10-30-2014 |