WPI-AIMR, Tohoku University Patent applications |
Patent application number | Title | Published |
20150076635 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 03-19-2015 |
20140159177 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 06-12-2014 |