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WINDBOND ELECTRONICS CORP.

HSINCHU, TW

WINDBOND ELECTRONICS CORP. Patent applications
Patent application numberTitlePublished
20100165722Phase Change Memory - A phase change memory (PCM) in which the phase change storage element is crystallized by a gradually increasing/decreasing operating current. The PCM comprises a switching circuit, the phase change storage element, a bit select switch, a pulse generating module, and a counting module. The switching circuit comprises a plurality of switches, selectively providing branch paths to an output terminal of a current source. The bit select switch controls the conduction between the phase change storage element and the output terminal of the current source. The pulse generating module outputs a pulse signal oscillating between high and low voltage levels. When enabled, the counting module counts the oscillations of the pulse signal, and outputs the count result by a set of digital data. The set of digital data are coupled to the switching circuit to control the switches therein.07-01-2010
20090127535PHASE CHANGE MEMORY ELEMENT AND METHOD FOR FABRICATING THE SAME - A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidewalls with different thicknesses. A phase change spacer is formed to cross the sidewalls with different thicknesses. A top electrode is electrically contacted to the phase change spacer.05-21-2009