| WAFERTECH, LLC Patent applications |
| Patent application number | Title | Published |
|---|
| 20120132096 | SILICIDED MOS CAPACITOR EXPLOSIVE DEVICE INITIATOR - An explosive device using a semiconductor explosion initiator device provides an MOS capacitor formed on a semiconductor substrate and including a silicide layer formed over a doped silicon layer formed over an oxide layer. The oxide layer is formed on an N-well formed in a semiconductor substrate. A voltage source applies a voltage which may be a pulsed voltage, across the MOS capacitor sufficient to cause the avalanche breakdown of the oxide layer and the diffusion of metal from the silicide layer into the doped silicon of the N-well formed in the substrate. The chemical reaction between the metal and the doped silicon causes the generation of a plasma which ignites a pyrotechnic material or ignites or detonates other explosive material in contact with the semiconductor explosion initiator device. | 05-31-2012 |
| 20120110779 | TURBINE POWERED CLEANING APPARATUS - A rotary turbine cleaning device for cleaning semiconductor fabrication equipment works in conjunction with a clean room vacuum or other vacuum or other air pump. The fluid flow created by the vacuum action causes the rotors of the turbine assembly to rotate, thereby rotating the cleaning head. Attached to the cleaning head are bristles or other cleaning media which may dislodge particles from surfaces. The dislodged particles are drawn into the tube through an opening at the end of the tube and the vacuum action. | 05-10-2012 |
| 20120025853 | SOLID STATE SENSOR FOR METAL ION DETECTION AND TRAPPING IN SOLUTION - A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination. | 02-02-2012 |
