VOXTEL, INC. Patent applications |
Patent application number | Title | Published |
20160141430 | AVALANCHE PHOTODIODE RECEIVER - A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric current when subject to an electric field. The multiplication region, in operation, has a first ionization rate for electrons and a second, different, ionization rate for holes. The method also includes applying the electric field to the multiplication region, receiving a current output from the multiplication region, and varying the electric field in time, whereby a portion of the current output is suppressed. | 05-19-2016 |
20160067659 | NANOCOMPOSITE-INK FACTORY - An apparatus for manufacturing nanocomposite-ink, the apparatus comprising, a nanoparticle reservoir, an organic-matrix reservoir, a homogenizer, and a dispenser. The homogenizer combines the nanoparticles and the organic-matrix, dispersing the nanoparticles within the organic-matrix, thereby producing a nanocomposite-ink for dispensement by the dispenser. | 03-10-2016 |
20160057366 | ASYNCHRONOUS READOUT ARRAY - An imaging device is disclosed, the device comprising a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit comprising a passive signal path and an active signal path. The active path provides consecutive frame imaging and the active path detects the location of transient events. The device further comprising a readout decoder block, the readout decoder block controlling operation of the passive paths. Additionally the device comprises of an address arbitration control block, the address arbitration control block controlling operation of the active paths, wherein the address arbitration control block readout of the active paths is independent of readout of the passive paths. | 02-25-2016 |
20160054434 | ASYNCHRONOUS LADAR AND IMAGING ARRAY - An imaging device comprises of a pixelated array of semiconductor detector elements, in which each detecting element is electrically connected to an integrated circuit, the integrated circuit of each of the pixels comprising a passive signal path and a transient signal path. The passive path provides consecutive frame or scene imaging and the transient path detects the transient electromagnetic events such as laser pulses. The transient path is electrically connected to a timing circuit, the timing circuit for determining the time-of-flight of return pulses emitted from the electromagnetic source detected by the transient signal paths. Wherein the passive path and transient path operate simultaneously enabling simultaneous passive and LADAR imaging. | 02-25-2016 |
20150362762 | NANOCOMPOSITE OPTICAL-DEVICE WITH INTEGRATED CONDUCTIVE PATHS - A nanocomposite optical device comprising a cured optically transparent nanocomposite ink and a treated conductive nanocomposite-ink. The treated conductive nanocomposite-ink integrated within the nanocomposite structure. The treated nanocomposite-ink having electrical, thermal or both electric and thermal communication to the exterior of the optical device and the same communication with at least a portion of the optically transparent nanocomposite within the optical-device. | 12-17-2015 |
20150355389 | NANOCOMPOSITE GRADIENT REFRACTIVE-INDEX FRESNEL OPTICAL-ELEMENT - A nanocomposite optical-element comprising a first surface, a second surface, and a nanocomposite between the first and the second surface. The nanocomposite comprising of a plurality of refractive-gradients, the plurality of refractive-gradients comprising one or more nanofillers dispersed in a cured organic-matrix. The nanofillers concentration variation determining the plurality of refractive-gradient profiles such that a profile discontinuity exists between any of the plurality of refractive-gradients that are adjacent. | 12-10-2015 |
20150338270 | DISCRIMINATING PHOTO COUNTS AND DARK COUNTS IN AN AVALANCHE PHOTODIODE - The output of an avalanche photodiode (APD) comprises a “photocurrent” component comprising photon initiated events resulting from the interaction of photons with the APD and a “dark current” component comprising dark carrier events arising in the APD even when the APD is not exposed to light. Differences in the pulse height distributions of photon initiated events and dark carrier initiated events are used to statistically discriminate between photocurrent and dark current components of APD output. | 11-26-2015 |
20130221193 | AVALANCHE PHOTODIODE RECEIVER - A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric current when subject to an electric field. The multiplication region, in operation, has a first ionization rate for electrons and a second, different, ionization rate for holes. The method also includes applying the electric field to the multiplication region, receiving a current output from the multiplication region, and varying the electric field in time, whereby a portion of the current output is suppressed. | 08-29-2013 |
20130188766 | METHOD AND DEVICE FOR MEASURING DURATION OF A TIME INTERVAL - A method and apparatus for measuring the duration of a transient signal with high precision. | 07-25-2013 |
20130075593 | ACTIVE PIXEL SENSORS WITH VARIABLE THRESHOLD RESET - A CMOS image sensor array has rows and columns of active pixels, and column lines in communication with the active pixels in the respective columns. Each active pixel has an output connected to a column line and includes a photodetector that produces a signal proportional to incident light intensity that is coupled to an active pixel output based on column select and row select signals. Each active pixel has a reset transistor for resetting the active pixel, wherein each reset transistor has a first gate terminal and a second gate terminal. The reset transistors have a variable threshold capability that allows increased sensor array dynamic range or mitigation of the effects of temperature or radiation induced transistor threshold voltage shifts. Row select, column select, and sense transistors can also be configured to have variable thresholds. | 03-28-2013 |