VOLTAFIELD TECHNOLOGY CORPORATION Patent applications |
Patent application number | Title | Published |
20140347047 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle. | 11-27-2014 |
20140103474 | TUNNELING MAGNETORESISTANCE SENSOR - A tunneling magnetoresistance sensor includes a substrate, an insulating layer, a tunneling magnetoresistance component and a first electrode array. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is in contact with the insulating layer and includes at least one magnetic tunneling junction unit. The first electrode array disposed in direct contact with the insulating layer. The first electrode array includes a number of first electrodes. Each of the at least one magnetic tunneling junction unit is electrically connected to two neighboring first electrodes of the first electrode array to form a current-in-plane tunneling conduction mode. | 04-17-2014 |
20130176022 | MAGNETORESISTIVE SENSING DEVICE - A magnetoresistive sensing device includes a substrate, a magnetic layer, a first electrode and a second electrode. The substrate has a reference plane. The first electrode and a second electrode are disposed over the reference plane. The magnetic layer is disposed over the reference plane and has a magnetization direction. A non-straight angle is formed between the magnetic layer and the reference plane. The first electrode and the second electrode are electrically connected with each other through an electric pathway of the magnetic layer. An included angle is formed between the electric pathway and the magnetization direction. Consequently, the magnetoresistive sensing device is capable of measuring a magnetic field change in a Z-axis direction, which is perpendicular to a reference plane. | 07-11-2013 |
20130115719 | METHOD FOR MANUFACTURING INTEGRATED CIRCUIT STRUCTURE WITH MAGNETORESISTANCE COMPONENT - A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure. | 05-09-2013 |
20130082697 | MAGNETORESISTANCE SENSING DEVICE AND MAGNETORESISTANCE SENSOR INCLUDING SAME - A magnetoresistance sensing device includes a substrate, a magnetoresistance sensing unit, and a magnetic field adjusting unit. In response to a first external magnetic field horizontal to a surface of the substrate, the magnetoresistance sensing unit results in a change of an electrical resistance. The magnetic field adjusting unit is used for changing a direction of a second external magnetic field vertical to the surface of the substrate to be consistent with the first external magnetic field, so that the magnetoresistance sensing unit results in a change of the electrical resistance in response to the second external magnetic field. A magnetoresistance sensor includes four magnetoresistance sensing devices, which are arranged in a Wheatstone bridge. An output voltage of the Wheatstone bridge is not altered as the first external magnetic field is changed, but the output voltage of the Wheatstone bridge is altered as the second external magnetic field is changed. | 04-04-2013 |
20130009258 | TUNNELING MAGNETORESISTANCE SENSOR - A tunneling magnetoresistance sensor including a substrate, an insulating layer, a tunneling magnetoresistance component and an electrode array is provided. The insulating layer is disposed on the substrate. The tunneling magnetoresistance component is embedded in the insulating layer. The electrode array is formed in a single metal layer and disposed in the insulating layer either below or above the TMR component. The electrode array includes a number of separate electrodes. The electrodes are electrically connected to the tunneling magnetoresistance component to form a current-in-plane tunneling conduction mode. The tunneling magnetoresistance sensor in this configuration can be manufactured with a reduced cost and maintain the high performance at the same time. | 01-10-2013 |
20120306488 | SPIN-VALVE MAGNETORESISTANCE STRUCTURE AND SPIN-VALVE MAGNETORESISTANCE SENSOR - A spin-valve magnetoresistance structure includes a first magnetoresistance layer having a fixed first magnetization direction, a second magnetoresistance layer disposed on a side of the first magnetoresistance layer and having a variable second magnetization direction, and a spacer disposed between the first magnetoresistance layer and the second magnetoresistance layer. The second magnetization direction is at an angle in a range from 30 to 60 degrees or from 120 to 150 degrees to the first magnetization direction when the intensity of an applied external magnetic field is zero. The second magnetization direction varies with the external magnetic field thereby changing an electrical resistance of the spin-valve magnetoresistance structure. A spin-valve magnetoresistance sensor based on the spin-valve magnetoresistance structure is also provided. | 12-06-2012 |
20120293164 | MAGNETORESISTANCE SENSOR WITH BUILT-IN SELF-TEST AND DEVICE CONFIGURING ABILITY AND METHOD FOR MANUFACTURING SAME - A magnetoresistance sensor includes a multifunctional circuit structure having the functionality of built-in self-testing and/or device configuration. The magnetoresistance sensor further includes a substrate having a first dielectric layer formed thereon and a magnetoresistance structure. The multifunctional circuit structure is disposed on the dielectric layer and includes a winding structure for generating a magnetic field for testing and configuring the magnetoresistance sensor. The magnetoresistance structure is disposed on the multifunctional circuit structure, wherein a topmost layer of the magnetoresistance structure includes a magnetoresistance layer, and the magnetoresistance structure generates electrical resistance variance corresponding to the generated magnetic field for testing and configuring the magnetoresistance sensor. A method for manufacturing the magnetoresistance sensor is also provided. | 11-22-2012 |
20120222291 | FABRICATING METHOD OF MAGNETORESISTANCE SENSOR - A fabricating method of a magnetoresistance sensor is provided with cost effective and process flexibility features. Firstly, a substrate is provided. Then, at least one magnetoresistance structure and at least one bonding pad are formed over the substrate, wherein the bonding pad is electrically connected with the magnetoresistance structure. Then, a passivation layer is formed over the magnetoresistance structure and the bonding pad. Then, a magnetic shielding and concentrator structure is formed over the passivation layer at a location corresponding to the magnetoresistance structure. Finally, bonding pad openings is formed on the passivation layer by patterned polyimide, thereby exposing the bonding pad. After bonding pad was opened, the patterned polyimide can be removed or retained as an additional protection layer. | 09-06-2012 |
20120212218 | MAGNETORESISTIVE SENSOR - A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle. | 08-23-2012 |
20120169330 | MAGNETORESISTANCE SENSOR AND FABRICATING METHOD THEREOF - An apparatus of a magnetoresistance sensor consisting of a substrate, a conductive unit on the substrate, and a magnetoresistance structure on the conductive unit is provided. The conductive unit includes a first surface and a second surface opposite to each other, and the first surface faces the substrate. The magnetoresistance structure is formed on the second surface of the conductive unit and is electrically connected to the conductive unit. The magnetoresistance sensor has high performance and reliability. A magnetoresistance sensor fabricating method based on this apparatus is also provided. | 07-05-2012 |