Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
VI SYSTEMS GMBH
| VI SYSTEMS GMBH Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20120121272 | Opto-electronic assembly for high speed transmission - The optoelectronic assembly for high speed signal transmission based on surface-emitting/receiving components is disclosed. The assembly contains a mounting plate with a top side used for the mounting of the components; single or multiple electrooptical or optoelectronic transducer components with the optical ports of the transducer on the top side and a bottom side used for assembly; a micro-mirror component; an optical transmission path wherein the transmission axis is oriented substantially parallel to the surface of the transducer components and to the top side of the mounting plate; and a transducer component mounted with the bottom side on the mounting plate near a micro-mirror component mounted above the transducer component in such a configuration that the optical transmission path to or from the transducer is reflected at the mirror surface such that the transducer is optically coupled to this same transmission path. | 05-17-2012 |
| 20090296754 | Optoelectric Device for High-Speed Data Transfer with Electrooptically Tunable Stopband Edge of a Bragg-Reflector - A device contains at least one wavelength-tunable multilayer interference reflector controlled by an applied voltage and at least one cavity. The stopband edge wavelength of the wavelength-tunable multilayer interference reflector is preferably electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode (or a composite cavity mode), resulting in a modulated transmittance of the multilayer interference reflector. A light-emitting medium is preferably introduced in the cavity or in one of the cavities permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply forward or reverse bias and may operate as a vertical cavity surface-emitting light emitter or modulator or as an edge-emitting light emitter or modulator. Using a multilayer interference reflector containing tunable section allows also obtaining a wavelength-tunable laser or a wavelength-tunable resonant cavity photodetector in the case where the optical field profile in the active cavity or cavities is affected by the stopband wavelength shift. Adding additional modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers. | 12-03-2009 |
| 20090041464 | Anti Stark Electrooptic Medium and Electrooptically Modulated Optoelectronic Device Based Thereupon - Semiconductor electrooptic medium shows behavior different from a medium based on quantum confined Stark Effect. A preferred embodiment has a type-II heterojunction, selected such, that, in zero electric field, an electron and a hole are localized on the opposite sides of the heterojunction having a negligible or very small overlap of the wave functions, and correspondingly, a zero or a very small exciton oscillator strength. Applying an electric field results in squeezing of the wave functions to the heterojunction which strongly increases the overlap of the electron and the hole wave functions, resulting in a strong increase of the exciton oscillator strength. Another embodiment of the novel electrooptic medium includes a heterojunction between a layer and a superlattice, wherein an electron and a hole in the zero electric field are localized on the opposite sides of the heterojunction, the latter being effectively a type-II heterojunction. Yet another embodiment has a heterojunction between two superlattices, wherein an electron and a hole in a zero electric field are localized on the opposite sides of the heterojunction, the latter operating effectively as a type-II heterojunction. A further embodiment has an ultrathin quantum well layer confined by barrier layers, having an essentially different barrier heights and a thick layer, wherein, in a zero electric field, a charged particle of one sign having a large effective mass is localized in this ultrathin layer, and a particle having a different sign of the charge, having a small effective mass is not localized in this ultrathin layer, but is localized mainly in the neighboring thick layer. Thus, the heterojunction between the two layers operates effectively as a type-II heterojunction. Applying an electric field to all types of the electrooptic medium of the present invention results in a dramatic increase of the exciton oscillator strength and, therefore, in a large positive refractive index change at the photon energies below the exciton absorption peak. A very strong increase in the optical transition photon energy can be achieved, when necessary. | 02-12-2009 |