VERSATILIS LLC Patent applications |
Patent application number | Title | Published |
20130092975 | Methods of Fabricating Optoelectronic Devices Using Semiconductor-Particle Monolayers and Devices Made Thereby - Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device. | 04-18-2013 |
20130056712 | Static-Electrical-Field-Enhanced Semiconductor-Based Devices and Methods of Enhancing Semiconductor-Based Device Performance - Devices that include one or more functional semiconductor elements that are immersed in static electric fields (E-fields). In one embodiment, one or more electrets are placed proximate the one or more organic, inorganic, or hybrid semiconductor elements so that the static charge(s) of the electret(s) participate in creating the static E-field(s) that influences the semiconductor element(s). An externally applied electric field can be used, for example, to enhance charge-carrier mobility in the semiconductor element and/or to vary the width of the depletion region in the semiconductor material. | 03-07-2013 |
20090218605 | Methods of Enhancing Performance of Field-Effect Transistors and Field-Effect Transistors Made Thereby - Methods of enhancing the performance of a field-effect transistor (FET) by providing a percolating network of metallic islands to the inversion layer of the FET so as to effectively reduce the channel length of the FET. The metal islands can be provided in a number of ways, including Volmer-Weber metallic film growth, breaking apart continuous metallic film, patterning metallic coating, dispersing metallic particles in a semiconducting material, applying a layer of composite particles having metallic cores and semiconducting shells and co-sputtering metallic and semiconducting materials, among others. FETs made using disclosed methods have a novel channel structures that include metallic islands spaced apart by semiconducting material. | 09-03-2009 |