| VEECO INSTRUMENTS INC. Patent applications |
| Patent application number | Title | Published |
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| 20120091914 | FAULT TOLERANT ION SOURCE POWER SYSTEM - The presently disclosed technology provides a responsive ion beam source power supply system capable of handling fault events without relying on conventional protection circuitry (e.g., fuses and breakers) so that physical power supply hardware intervention by a user is minimized for typical fault conditions and the ion beam source power supply system may recover automatically after experiencing a fault condition. The presently disclosed technology further discloses an ion beam source power supply system capable of detecting and diagnosing fault states, autonomously implementing command decisions to preserve or protect the function of other ion source modules or sub-systems, and/or mitigating or recovering from the disruptive fault event and returning the ion beam source system to desired user settings. | 04-19-2012 |
| 20120080609 | GRID PROVIDING BEAMLET STEERING - A grid assembly coupled to a discharge chamber of an ion beam source is configured for steering ion beamlets emitted from the discharge chamber at circularly asymmetrically determined steering angles. The grid assembly includes at least first and a second grid with a substantially circular pattern of holes, wherein each grid comprises holes positioned adjacent to one another. A plurality of the holes of the second grid is positioned with offsets relative to corresponding holes in the first grid. Due to the offsets in the holes in the second grid, ions passing through the offset holes are electrostatically attracted towards the closest circumferential portion of the downstream offset holes. Thus, the trajectories of ions passing through the offset holes are altered. The beamlet is steered by predetermined asymmetric angles. The predetermined steering angles are dependent upon the hole offsets, voltage applied to the grids, and the distance between the grids. | 04-05-2012 |
| 20120080308 | PLUME STEERING - Non-elliptical ion beams and plumes of sputtered material can yield a relatively uniform wear pattern on a destination target and a uniform deposition of sputtered material on a substrate assembly. The non-elliptical ion beams and plumes of sputtered material impinge on rotating destination targets and substrate assemblies. A first example ion beam grid and a second example ion beam grid each have patterns of holes with an offset between corresponding holes. The quantity and direction of offset determines the quantity and direction of steering individual beamlets passing through corresponding holes in the first and second ion beam grids. The beamlet steering as a whole creates a non-elliptical current density distribution within a cross-section of an ion beam and generates a sputtered material plume that deposits a uniform distribution of sputtered material onto a rotating substrate assembly. | 04-05-2012 |
| 20120080307 | ION BEAM DISTRIBUTION - An ion beam system includes a grid assembly having a substantially elliptical pattern of holes to steer an ion beam comprising a plurality of beamlets to generate an ion beam, wherein the ion current density profile of a cross-section of the ion beam is non-elliptical. The ion current density profile may have a single peak that is symmetric as to one of the two orthogonal axes of the cross-section of the ion beam. Alternatively, the single peak may be asymmetric as to the other of the two orthogonal axes of the cross-section of the ion beam. In another implementation, the ion current density profile may have two peaks on opposite sides of one of two orthogonal axes of the cross-section. Directing the ion beam on a rotating destination work-piece generates a substantially uniform rotationally integrated average ion current density at each point equidistant from the center of the destination work-piece. | 04-05-2012 |
| 20120073502 | HEATER WITH LIQUID HEATING ELEMENT - A heater for a heating system of a chemical vapor deposition process includes a relatively highly emissive body and an electrically conductive heating element disposed within a passageway in the body. The heating element is constructed to melt below an operating temperature of the heater. The passageway is constructed to retain the melted heating element in a continuous path, so that an electrical current along the heating element may be maintained during operation of the heater. Various shapes and arrangements of the passageway within the body may be used, and the heating system may be constructed to provide multiple, independently controllable temperature zones. | 03-29-2012 |
| 20120070916 | MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS - A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation. | 03-22-2012 |
| 20120058630 | Linear Cluster Deposition System - A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers. | 03-08-2012 |
| 20120040514 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber ( | 02-16-2012 |
| 20120040097 | ENHANCED WAFER CARRIER - A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets. | 02-16-2012 |
| 20120027936 | EXHAUST FOR CVD REACTOR - A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports. | 02-02-2012 |
| 20110300645 | APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION - An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon. | 12-08-2011 |
| 20110300297 | MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE - Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween. | 12-08-2011 |
| 20110297076 | APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION - An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon. | 12-08-2011 |
| 20110290175 | Multi-Chamber CVD Processing System - A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable. | 12-01-2011 |
| 20110287635 | WAFER CARRIER WITH HUB - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. | 11-24-2011 |
| 20110233176 | SPLIT LASER SCRIBE - A dual-beam laser cutting system uses laser beam polarization to output two identical laser beams. The dual identical laser beams are spaced appropriately to simultaneously cut a water thus increasing the laser cutting system's throughput as compared to a single-laser cutting system. In one implementation, the dual-beam laser cutting system | 09-29-2011 |
| 20110215071 | WAFER CARRIER WITH SLOPED EDGE - A wafer carrier includes a body defining a central axis, a generally planar top surface perpendicular to the central axis, and pockets recessed below the top surface for receiving wafers. The body can include a lip projecting upwardly around the periphery of the top surface. The lip can define a lip surface sloping upwardly from the planar top surface in a radially outward direction away from the central axis. The body can be adapted for mounting on a spindle of a processing apparatus so that the central axis of the body is coaxial with the spindle. The lip can improve the pattern of gas flow over the top surface of the wafer carrier. | 09-08-2011 |
| 20110206843 | PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL - Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. | 08-25-2011 |
| 20110167524 | METHOD AND APPARATUS OF OPERATING A SCANNING PROBE MICROSCOPE - An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode being workable across varying environments, including gaseous, fluidic and vacuum. Ease of use is facilitated by eliminating the need for an expert user to monitor imaging. | 07-07-2011 |
| 20110129947 | Method For Improving Performance Of A Substrate Carrier - A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier. | 06-02-2011 |
| 20110114022 | WAFER CARRIER WITH HUB - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. The wafer carrier also preferably includes a gas flow facilitating element on the upstream surface of the plate in the central region of the plate. The gas flow facilitating element helps redirect the flow of incident gases along the upstream surface and away from a flow discontinuity in the central region. | 05-19-2011 |
| 20110091648 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
| 20110089022 | METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE - Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture. | 04-21-2011 |
| 20110088623 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
| 20110041308 | Erodible Spacer Dicing Blade Gang Assembly - A ganged saw blade assembly for dicing of wafers includes a plurality of circular saw blades positioned along a common central axis and erodible pitch spacers positioned along the common central axis between adjacent saw blades. The pitch spacers are eroded to a desired diameter relative to the common central axis to maintain a desired saw exposure, e.g. by sawing into an abrasive material with the saw blade assembly. The saw blade assembly thus permits use of the saw blades over longer periods notwithstanding erosion of the blades. | 02-24-2011 |
| 20100300359 | MULTI-GAS DISTRIBUTION INJECTOR FOR CHEMICAL VAPOR DEPOSITION REACTORS - A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial. | 12-02-2010 |
| 20100291308 | Web Substrate Deposition System - A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate. | 11-18-2010 |
| 20100285218 | Linear Deposition Source - A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube. | 11-11-2010 |
| 20100282167 | Linear Deposition Source - A deposition source includes a crucible for containing deposition material and a body comprising a conductance channel. An input of the conductance channel is coupled to an output of the crucible. A heater heats the crucible so that the crucible evaporates the deposition material into the conductance channel. A heat shield comprising a plurality of heat resistant material layers is positioned around at least one of the heater and the body. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. | 11-11-2010 |
| 20100219358 | GRID TRANSPARENCY AND GRID HOLE PATTERN CONTROL FOR ION BEAM UNIFORMITY - A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both. | 09-02-2010 |
| 20100159132 | Linear Deposition Source - A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. | 06-24-2010 |
| 20100143588 | CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS - A flow inlet element ( | 06-10-2010 |
| 20100122385 | METHOD AND APPARATUS OF OPERATING A SCANNING PROBE MICROSCOPE - An improved mode of AFM imaging (Peak Force Tapping (PFT) Mode) uses force as the feedback variable to reduce tip-sample interaction forces while maintaining scan speeds achievable by all existing AFM operating modes. Sample imaging and mechanical property mapping are achieved with improved resolution and high sample throughput, with the mode workable across varying environments, including gaseous, fluidic and vacuum. | 05-13-2010 |
| 20100112216 | Chemical vapor deposition with elevated temperature gas injection - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 05-06-2010 |
| 20100087050 | Chemical vapor deposition with energy input - Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed. | 04-08-2010 |
| 20100055318 | WAFER CARRIER WITH VARYING THERMAL RESISTANCE - In chemical vapor deposition apparatus, a water carrier ( | 03-04-2010 |
| 20090205092 | METHOD OF FABRICATING A PROBE DEVICE FOR A METROLOGY INSTRUMENT AND A PROBE DEVICE PRODUCED THEREBY - A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate and forming a tip stock extending upwardly from the substrate. The tip stock is preferably FIB milled to form a tip of the probe device. The tip preferably has a high aspect ratio, with a height that is at least about 1 micron for performing critical dimension (e.g., deep trench) atomic force microscopy. The stock is preferably pedestal shaped having a distal end that is substantially planar which can be machined into a tip in at least less than about 2 minutes. With the preferred embodiments, the FIB milling step can be completed in substantially fewer and less complicated steps than known techniques to produce a high aspect ratio tip suitable for DT-AFM in less than about one minute. | 08-13-2009 |
| 20090185193 | Interferometric measurement of DLC layer on magnetic head - An explicit relationship is developed between the ratio of average interferometric modulation produced by diamond-like carbon (DLC)-coated magnetic-head surfaces and the thickness of the DLC layer. Accordingly, the thickness of the DLC layer is calculated in various manners from modulation data acquired for the system using object surfaces of known optical parameters. | 07-23-2009 |
| 20090155028 | Wafer carrier with hub - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. | 06-18-2009 |
| 20090098306 | Method and Apparatus for Surface Processing of a Substrate Using an Energetic Particle Beam - Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam. | 04-16-2009 |
| 20090018786 | Interferometric iterative technique with bandwidth and numerical-aperture dependency - An interferometric intensity equation includes parameters that depend on bandwidth and numerical aperture. An error function based on the difference between actual intensities produced by interferometry and the intensities predicted by the equation is minimized iteratively with respect to the parameters. The scan positions (i.e., the step sizes between frames) that minimized the error function are then used to calculate the phase for each pixel, from which the height can also be calculated in conventional manner. As a result, the phase map generated by the procedure is corrected to a degree of precision significantly better than previously possible. | 01-15-2009 |
| 20090017190 | Movable injectors in rotating disc gas reactors - A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation. | 01-15-2009 |
| 20090002775 | Interferometric measurement of non-homogeneous multi-material surfaces - Correction factors for the ALR and PTR parameters of magnetic-head sliders are determined by calculating an effective reflectivity and a corresponding PCOR at each pixel of the air-bearing surface. The absolute value of reflectivity at each pixel of the AlTiC air-bearing surface is obtained from an empirical equation relating it to modulation. The ratio of Al | 01-01-2009 |
| 20080276695 | NON-DESTRUCTIVE WAFER-SCALE SUB-SURFACE ULTRASONIC MICROSCOPY EMPLOYING NEAR FIELD AFM DETECTION - A method, and corresponding apparatus, of imaging sub-surface features at a plurality of locations on a sample includes coupling an ultrasonic wave into a sample at a first lateral position. The method then measures the amplitude and phase of ultrasonic energy near the sample with a tip of an atomic force microscope. Next, the method couples an ultrasonic wave into a sample at a second lateral position and the measuring step is repeated for the second lateral position. Overall, the present system and methods achieve high resolution sub-surface mapping of a wide range of samples, including silicon wafers. It is notable that when imaging wafers, backside contamination is minimized. | 11-13-2008 |
| 20080264341 | APPARATUS FOR CATHODIC VACUUM-ARC COATING DEPOSITION - Apparatus for cathodic vacuum-arc coating deposition. The apparatus includes a mixing chamber, at least one input duct projecting from a first end wall of the mixing chamber, and an output duct projecting from a second end wall of the mixing chamber. Coupled with each input duct is a plasma source adapted to discharge an ion flow of a coating material into the mixing chamber, which is subsequently directed to the output duct. A first solenoidal coil disposed about a side wall of the mixing chamber creates a first magnetic field inside the mixing chamber for steering the ion flow. A second solenoidal coil is disposed adjacent to the first end wall and aligned substantially coaxially with the output duct. The second solenoidal coil creates a second magnetic field inside the mixing chamber for steering the first ion flow. The electrical currents flow through the first and second solenoidal coils in opposite solenoidal directions. | 10-30-2008 |
| 20080218999 | Variable-wavelength illumination system for interferometry - An illumination system for an interferometer combines a white-light source and a green source with a reflective green dichroic filter. When the green source alone is energized for PSI measurements, the output of the illumination system is green only. When a white-light output is desired for VSI measurements, both sources are energized and the intensity of the green light is judiciously calibrated to match the spectral band filtered out by the dichroic mirror. Therefore, the system can switch between green and white light simply by changing the selection of energized sources, without any mechanical switching and attendant delays and vibrations. Multiple narrowband sources may be combined with white light in a similar manner. | 09-11-2008 |
