VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATE, INC.
|VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATE, INC. Patent applications|
|Patent application number||Title||Published|
|20130005155||METHOD TO ENHANCE CHARGE TRAPPING - Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device.||01-03-2013|