| UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION Patent applications |
| Patent application number | Title | Published |
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| 20120087160 | POWER FACTOR CORRECTION CIRCUIT - There is provided a power factor correction circuit capable of correcting a power factor of a power converting module through increasing an input current by switching a main switching element of a power converting module on the basis of a first reference wave having a slope based on a first signal and an error voltage, in particular, by limiting a switching frequency on the basis of a first reference wave having a slope based on a second signal lower than a first signal and an error voltage when the switching frequency of the main switching element increases because an input voltage of the power converting module is low. | 04-12-2012 |
| 20120086515 | RELAXATION OSCILLATOR - There is provided relaxation oscillator. The relaxation oscillator includes: a ramp wave generator generating ramp waves by a complementary operation between a first capacitor module charged and discharged according to a first switching signal and a second capacitor module charged and discharged according to a second switching signal; a negative feedback circuit unit generating a compensation voltage for compensating errors with reference voltage by being fedback with the ramp waves; and a switching signal generator generating the first switching signal controlling the charging and discharging of the first capacitor module and the second switching signal controlling the charging and discharging of the second capacitor module from the compensation voltage and the ramp waves. As a result, the present invention can generate ramp waves having a stable frequency while preventing a frequency from being changed due to a delay or an offset of the comparator. | 04-12-2012 |
| 20120040483 | Copper Blend I-VII Compound Semiconductor Light-Emitting Devices - Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed. | 02-16-2012 |
| 20110273799 | NANOMETER SCALE MAGNETIZATION - Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided. | 11-10-2011 |
| 20110187362 | DETECTION USING MAGNETIC FIELD - A device to detect a magnetic field is disclosed. The device includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets may be operable to transmit a radio frequency (RF) signal to a target, and a second set of nano-magnets may be operable to induce an electrical signal in response to a magnetic resonance signal generated from the target. | 08-04-2011 |
| 20110182544 | OPTICAL FIBER SENSOR - An optical fiber sensor may include an optical fiber configured to receive a light having a first frequency from a light source and to transmit the light through the optical fiber, the transmitted light having the first frequency and a second frequency which is generated by stimulated Brillouin scattering (SBS), a photodetector configured to receive the transmitted light from the optical fiber and to convert the transmitted light into an electric signal and a sensing circuit configured to calculate an average squared value of the electric signal received from the photodetector, which is dependent on a frequency difference between the first frequency and the second frequency. | 07-28-2011 |
| 20110160542 | WAVEGUIDE - A waveguide receives a wave transmitted from an external power source and to guide the wave to reach within a width of a rectenna. The waveguide may include a negative refractive index medium and/or a surface plasmon medium. | 06-30-2011 |
| 20110138344 | QUANTUM KARNAUGH MAP - Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided. | 06-09-2011 |
| 20110121263 | Coupled Asymmetric Quantum Confinement Structures - Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed. | 05-26-2011 |
| 20110114995 | Copper Blend I-VII Compound Semiconductor Light-Emitting Devices - Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed. | 05-19-2011 |
| 20110095761 | DETECTION OF MAGNETIC FIELDS USING NANO-MAGNETS - Magnetic field detection techniques and devices are provided. In one embodiment, a device configured to detect a magnetic field includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets is operable to induce a RF magnetic field, and the second set of nano-magnets is operable to induce a first electrical signal in response to magnetic resonance signals caused by the RF magnetic field. | 04-28-2011 |
| 20110095309 | SEMICONDUCTOR DEVICE - Semiconductor devices including a light emitting layer, and at least one surface plasmon metal layer in contact with the light emitting layer are provided. The light emitting layer includes an active layer having a first band gap, and one or more barrier layers having a second band gap. The first band gap is smaller than the second band gap. Methods for fabricating semiconductor devices are also provided. | 04-28-2011 |
| 20110043884 | POLARITON MODE OPTICAL SWITCH WITH COMPOSITE STRUCTURE - Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first optical-field confining structure located on the substrate, a second optical-field confining structure located on the substrate, and a composite structure located between the first and second optical-field confining structures. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The composite structure may include an embedding structure with a surface to receive photons and multiple quantum structures located in the embedding structure. | 02-24-2011 |
| 20110042721 | PHOTOVOLTAIC DEVICES - Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a second barrier layer located on the well layer. A metal layer is located adjacent to the active layer. | 02-24-2011 |
| 20110001125 | PHOTODETECTOR CAPABLE OF DETECTING LONG WAVELENGTH RADIATION - Apparatuses capable of and techniques for detecting long wavelength radiation are provided. | 01-06-2011 |
| 20110001124 | PHOTODETECTOR CAPABLE OF DETECTING THE VISIBLE LIGHT SPECTRUM - Apparatuses capable of and techniques for detecting the visible light spectrum are provided. | 01-06-2011 |
| 20110001122 | COMPOUND SEMICONDUCTORS - Compound semiconductors capable of emitting light in the green spectrum are provided. The compound semiconductors may display improved quantum efficiencies when applied to various optical devices. Also, light emitting diodes and light emitting diode modules comprising the compound semiconductors are provided. | 01-06-2011 |
| 20110001121 | COMPOUND SEMICONDUCTORS - Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region. | 01-06-2011 |
| 20100327278 | LAMINATED STRUCTURES - Laminated structures having improved optical gain are provided. In one embodiment, a laminated structure includes a first cladding layer having at least two barrier layers which have different energy band gaps, an active layer formed on the first cladding layer and having an active layer energy band gap, and a second cladding layer formed on the active layer and including at least two barrier layers which have different energy band gaps. The first cladding layer and the second cladding layer may be doped with a different type of dopant. | 12-30-2010 |
| 20100326489 | LIGHT-ELECTRICITY CONVERSION DEVICE - Light-electricity conversion devices based on II-VI semiconductor materials are provided. The light-electricity conversion devices are able to cover a wide spectrum range. | 12-30-2010 |
| 20100315273 | DIGITAL-TO-ANALOG CONVERTER - A digital-to-analog converter (DAC) includes multiple electro-optical converters to generate multiple first optical signals in response to multiple input signals, multiple optical attenuators to attenuate intensities of the first optical signals and to generate multiple second optical signals, an optical coupler to combine the second optical signals and to generate a third optical signal, and a photodetector to convert the third optical signal into an electrical analog signal. | 12-16-2010 |
| 20100314608 | PHOTODETECTORS - Implementations of quantum well photodetectors are provided. | 12-16-2010 |
| 20100301308 | PHOTODETECTORS - Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure. | 12-02-2010 |
| 20100276730 | SEMICONDUCTOR DEVICE - Semiconductor devices having at least one barrier layer are disclosed. In some embodiments, a semiconductor device includes an active layer and one or more barrier layers disposed on either one side or both sides of the active layer. The active layer may be composed of a first compound semiconductor material, and the one or more barrier layers may be composed of a second compound semiconductor material. In some embodiments, the composition of the one or more barrier layers may be adjusted to increase an optical dipole matrix element. | 11-04-2010 |
| 20100276661 | POLARITON MODE OPTICAL SWITCH - Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons. | 11-04-2010 |
| 20100270892 | PIEZOELECTRIC ACTUATOR - Piezoelectric actuators having a piezoelectric layer in which a cantilever portion is formed are disclosed. In one embodiment, an actuator includes a support layer and a piezoelectric layer. The piezoelectric layer may include a supported portion formed on the support layer and a cantilever portion which extends beyond the support layer. | 10-28-2010 |
| 20100270592 | SEMICONDUCTOR DEVICE - Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer, and at least one barrier layer disposed on at least one surface of the at least one active layer. The at least one barrier layer has a wider energy band gap than the energy band gap of the at least one active layer. The compounds of the active layer and the barrier layer may be selected to reduce relaxation time of an electron or hole in the active layer. | 10-28-2010 |
| 20100270591 | HIGH-ELECTRON MOBILITY TRANSISTOR - Disclosed are high electron mobility transistors (HEMTs). In some embodiments, a HEMT includes a channel layer composed of a first compound semiconductor material and one or more barrier layers disposed on either one side or both sides of the channel layer and composed of a second compound semiconductor material. | 10-28-2010 |
| 20100270547 | SEMICONDUCTOR DEVICE - Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer composed of a first compound, and at least one barrier layer composed of a second compound and disposed on at least one surface of the at least one active layer. The at least one barrier layer may have a wider energy band gap than an energy band gap of the at least one active layer. The compositions of the first and second compounds may be controlled to adjust the difference between Fermi functions for conduction band and valence band in the at least one active layer. | 10-28-2010 |
| 20100082886 | VARIABLE SPACE PAGE MAPPING METHOD AND APPARATUS FOR FLASH MEMORY DEVICE - Disclosed is a method and apparatus embodying a flash translation layer (FTL) in a storage device including a flash memory. The FTL may classify a block into a sequential group and a fusion group based on a locality of a write request. The FTL may store data in blocks of the fusion group by using a page mapping scheme, and sequentially store data by using a block mapping scheme. The FTL may improve efficiency of garbage collection operation that is performed by using limited redundant blocks and also may increase efficiency of a non-sequential reference operation. | 04-01-2010 |
| 20100053808 | NANOMETER SCALE MAGNETIZATION - Magnetic heads for perpendicular magnetic recording on magnetic recording media are provided. | 03-04-2010 |
| 20100040102 | OPTOELECTRONIC DEVICES - Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer formed on the active layer and including a second barrier layer. The active layer is positioned between and adjacent to the first barrier layer and the second barrier layer. | 02-18-2010 |
| 20100039107 | MAGNETIC CARRIER MANIPULATION AND DETECTION USING A NANOMETER SCALE TRANSFORMER - A nanometer scale transformer configured to manipulate and detect a magnetic carrier is provided. | 02-18-2010 |
