University of Electronic Science and Technology of China Patent applications |
Patent application number | Title | Published |
20160126051 | Metamaterial high-power microwave source - A metamaterial high-power microwave source relates to the fields of vacuum electronic technology, particle physics, and accelerators, including: a cathode, a metamaterial slow-wave structure (SWS), a waveguide and coaxial line coupler located at one end of the metamaterial SWS and a collector component located at the other end of the metamaterial SWS. The metamaterial SWS provided by the present invention is greatly smaller than a rectangular waveguide having the same frequency, so as to realize a miniaturization of devices and facilitate integration with semiconductor devices. The waveguide and coaxial line coupler has a good transmission characteristic and a low reflection in a relatively wide frequency band, which guarantees a high-efficient coupling output of a signal. Moreover, the metamaterial high-power microwave source has a high-power output and a pulsed output power reaching a megawatt level. | 05-05-2016 |
20160032443 | Vanadium oxide thermo-sensitive film material with high temperature coefficient of resistance and a preparing method thereof - A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source. | 02-04-2016 |
20150160172 | Double-sided Diaphragm Micro Gas-preconcentrator with a Back-on-face Configuration - A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by stacking an upper silicon substrate with a lower silicon substrate with a back-on-face configuration. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator. | 06-11-2015 |
20150155128 | Miniaturized all-metal slow-wave structure - A miniaturized all-metal slow-wave structure includes: a circular metal waveguide; and metal electric resonance units provided in the circular metal waveguide; wherein the metal electric resonance unit provided in the circular metal waveguide includes a ring-shaped electric resonance metal plate with an electron beam tunnel provided on a center thereof, and a ring plate body of the ring-shaped electric resonance metal plate has two auricle-shaped through-holes symmetrically aside an axial-section; a main body of the auricle-shaped through-hole is a ring-shaped hole, two column holes extending towards a center of a circle are provided at two ends of the ring-shaped hole; the ring-shaped electric resonance metal plates are perpendicular to an axis and are provided inside the circular metal waveguide with equal intervals therebetween, external surfaces of the ring-shaped electric resonance metal plates are mounted on an internal surface of the circular metal waveguide. | 06-04-2015 |
20140316728 | SYSTEM AND METHOD FOR SOC ESTIMATION OF A BATTERY - The present invention provides a SOC estimation method applied to a battery system comprising a battery pack. The SOC estimation method comprises the steps of: determining an initial SOC value; determining whether the battery pack is in a working status; measuring the voltage and current of the battery pack if the battery pack is in the working status; calculating a current SOC value by using an ampere-hour method based on the initial SOC value and the measured voltage and current; determining dynamic characteristic parameters of the battery pack; and optimizing the current SOC value by using extended Kalman filter (EKF) method and based on the dynamic characteristic parameters of the battery pack. | 10-23-2014 |
20140188419 | METHOD FOR MEASURING THE WAVEFORM CAPTURE RATE OF PARALLEL DIGITAL STORAGE OSCILLOSCOPE - The present invention provides a method for measuring the waveform capture rate of parallel digital storage oscilloscope. On the basis of double pulse measurement, and in consideration of the asymmetry of acquisition and the refreshing time of parallel DSO, the present invention provides a step amplitude-frequency combined pulse measurement to measure the time for waveform acquisition and mapping T | 07-03-2014 |
20140183360 | Long-distance polarization and phase-sensitive optical time-domain reflectometry based on random laser amplification - A long-distance polarization and phase-sensitive reflectometry based on random laser amplification for extending a sensing distance includes a long-distance polarization and phase-sensitive reflectometry of a distributed Raman amplification based on optical fiber random lasers generated by unilateral pumps, a long-distance polarization and phase-sensitive reflectometry of a distributed Raman amplification based on optical fiber random lasers generated by bilateral pumps, and a long-distance polarization and phase-sensitive reflectometry of a Raman amplification based on a combination of optical fiber random lasers generated by unilateral pumps and a common Raman pump source, which are applied in optical fiber perturbation sensing and have a capability of greatly improving a working distance of a sensing system and a high practicability. | 07-03-2014 |
20140118726 | Device for measuring refractive index of medium based on optical delay technology and its method - A device for measuring refractive index of medium based on optical delay technology comprises: a signal processing and controlling module, an optical transmitter module, and an optical receiver module, wherein the signal processing and controlling module controls the optical transmitter module to transmit an optical signal having a certain wavelength; the optical signal is injected into a medium to be measured; the optical signal is transmitted and delayed by the medium; the optical receiver module receives the optical signal delayed, and transforms the optical signal delayed into a electrical signal; the electrical signal is amplified and transmitted to the signal processing and controlling module; the signal processing and controlling module measures a delay time between transmitting and receiving the optical signal; and the refractive index of the medium at the certain wavelength is calculated based on the delay time and a known length of the medium. | 05-01-2014 |
20140048725 | Method for generating high power electromagnetic radiation based on double-negative metamaterial - A method for generating high power electromagnetic radiation based on double-negative metamaterial (DNM), includes providing electrons of an electron beam moving in a vacuum close to an interface between the DNM and the vacuum at a predetermined average speed larger than a phase velocity of an electromagnetic wave propagating in the DNM so as to generate coherent high power radiation. The method can be applied but not limited to high power and compact Terahertz radiation sources and Cherenkov particle detectors and emitters. | 02-20-2014 |
20130335045 | POWER CONVERTER WITH THE FUNCTION OF DIGITAL ERROR CORRECTION - This invention relates to the output voltage regulator of step-down switching power converters. This invention provides regulator with digitally adjusted output voltage. It solves the problem of low regulation due to low error amplifier (EA) gain. This invention is a power converter with the function of Digitally Error Correction, consisting of Logic Control, EA, PWM comparator, Driver, power devices and passive components. It features Digital Calibration Circuit whose input terminal is connected to the output voltage and output terminal is connected to the error signal. When the output voltage exceeds the tolerance range, this Digital Calibration Circuit will increase or decrease the error signal step by step, keeping the output voltage in the tolerance range. The Digital Calibration Circuit of this invention can be applied not only in nanometer scale process, but also in traditional process. For those power converters in traditional process, it is also quite promising in applications. | 12-19-2013 |
20130320946 | MINIMUM ENERGY POINT TRACKING BUCK CONVERTER - This invention involves with a low power IC (Integrated Circuit) with high energy efficiency. This invention describes a Buck converter that can track the minimum energy point of the load. It works by estimating input energy of every sensing period, taking advantage of energy consumption curve of IC in sub-threshold. Energy estimation is implemented with counting conducted pulses, while maintaining constant input energy of each pulse by regulating output voltage and ON time with digital control circuit. With digital control circuit, minimum energy point can be tracked with a lookup table stored inside. Most of this invention's control circuit is digital, with benefits of low power consumption and small chip area. | 12-05-2013 |
20130314068 | TEMPERATURE ADAPTIVE BANDGAP REFERENCE CIRCUIT - This invention involves a bandgap reference circuit in IC. The temperature coefficient of conventional bandgap reference is large and the higher order compensation is difficult to implement. This invention provides an adaptive compensated bandgap reference which solves the problem only using lower order (first order) temperature coefficient compensation. The invention adopts segmental compensation circuit to realize adaptive segmental compensation of bandgap reference with low temperature coefficient. The technical solution includes traditional bandgap voltage reference circuit and adaptive feedback compensation circuit which consists of sample and hold circuit, voltage comparator and control module. This invention controls the bandgap voltage reference through systematical view and it has high process compatibility. This invention can find the best temperature characteristic curve adaptively, the output voltage has low temperature coefficient, meeting the requirement of fabrication process, the implementation is simple with small area. This invention relates to integrated circuits. | 11-28-2013 |
20130256800 | SOI DEVICES FOR PLASMA DISPLAY PANEL DRIVER CHIP - SOI devices for plasma display panel driver chip, include a substrate, a buried oxide layer and an n-type SOI layer in a bottom-up order, where the SOI layer is integrated with an HV-NMOS device, an HV-PMOS device, a Field-PMOS device, an LIGBT device, a CMOS device, an NPN device, a PNP device and an HV-PNP device; the SOI layer includes an n+ doped region within the SOI layer at an interface between the n-type SOI layer and the buried oxide layer; and the n+ doped region has a higher doping concentration than the n-type SOI layer. | 10-03-2013 |
20130249022 | Double-sided diaphragm micro gas-preconcentrator - A double-sided diaphragm micro gas-preconcentrator has a micro-gas chamber which is formed by bonding an upper silicon substrate with a lower silicon substrate. One or more suspended membranes are provided on every silicon substrate. The silicon where the suspended membrane is provided is completely removed for forming a cavity. A thin-film heater is deposited on every suspended membrane. A sorptive film is coated on an inner wall of every suspended membrane. Thus, the upper and lower sides of the preconcentrator in the present invention are suspended membranes, which improve the area of the sorptive film on the diaphragm. As a result, the preconcentrating factor is improved while keeping the small heat capacity, fast heating rate, and low power consumption features of the planar diaphragm preconcentrator. | 09-26-2013 |
20130214355 | HIGH VOLTAGE LDMOS DEVICE - A high voltage lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOS) comprises a substrate; an epitaxy layer on the substrate; a drift region on the epitaxy layer; and a drain region and a source region at two ends. At least one pair of n-type and p-type semiconductor regions is arranged alternately above the interface of the substrate and the epitaxy layer and firmly attached to a lower surface of the drifting region; the n-type and p-type semiconductor regions are firmly closed to each other and arranged to form a lateral PN junction; and the p-type semiconductor region and the drifting region form a vertical PN junction. The n-type and p-type semiconductor regions are also totally called “a reduced surface field (RESURF) layer in body”, and the LDMOS device with a RESURF layer in body effectively solves conflict between raising reverse withstand voltage and reducing forward on-resistance of the current LDMOS devices. | 08-22-2013 |
20130193509 | SOI LATERAL MOSFET DEVICES - The present invention relates to a semiconductor power device and power integrated circuits (ICs). The lateral SOI MOSFET in the present comprises a trench gate extended to the dielectric buried layer, one or multiple dielectric trenches in the drift region, and a buried gate in said dielectric trench. The permittivity of the dielectric in said dielectric trench is lower than that of said active layer. Firstly, said dielectric trench not only greatly improves breakdown voltage, but also reduces pitch size. Secondly, the trench gate widens the effective conductive region in the vertical direction. Thirdly, dual gates of said trench gate and buried gate increase channel and current densities. Thereby, specific on-resistance and the power loss are reduced. The device of the present invention has many advantages, such as high voltage, high speed, low power loss, low cost and ease of integration. The device in the present invention is particularly suitable for power integrated circuits and RF power integrated circuits. | 08-01-2013 |
20130148691 | Distributed optical fiber temperature sensor based on optical fiber delay - The present invention discloses distributed optical fiber temperature sensor based on optical fiber delay technology, including a tunable optical transmitter module, an optical receiver module, a signal processing and controlling module and multiple distributed sensing modules connected in series via transmission fibers. The multiple wavelengths optical signals transmitted from the tunable optical transmitter module respectively are transmitted into the first sensing module, and then transmitted out from the last sensing module. The output multiple wavelengths optical signals arrive at the optical receiver module. The optical receiver module converts optical signals of all wavelengths into electrical signals and transmits them into the signal processing and controlling module. The signal processing and controlling module measures transmission delay time of optical signal of each wavelength respectively, and calculates and obtains the temperature parameters of corresponding distributed testing positions based on the relative delay time. | 06-13-2013 |
20130137235 | MOS TRANSISTOR USING STRESS CONCENTRATION EFFECT FOR ENHANCING STRESS IN CHANNEL AREA - A MOS transistor ( | 05-30-2013 |
20120260125 | MULTI-DISK FAULT-TOLERANT SYSTEM, METHOD FOR GENERATING A CHECK BLOCK, AND METHOD FOR RECOVERING A DATA BLOCK - A multi-disk fault-tolerant system, a method for generating a check block, and a method for recovering a data block are provided. The multi-disk fault-tolerant system includes a disk array and a calculation module connected through a system bus, the disk array is formed by p disks, and a fault-tolerant disk amount of the disk array is q; data in the disk array is arranged according to a form of a matrix M of (m+q)×p, where m is a prime number smaller than or equal to p−q; in the matrix M, a 0 | 10-11-2012 |
20120168856 | TRENCH-TYPE SEMICONDUCTOR POWER DEVICES - The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high. | 07-05-2012 |
20110196961 | METHOD FOR NETWORK ANOMALY DETECTION IN A NETWORK ARCHITECTURE BASED ON LOCATOR/IDENTIFIER SPLIT - The present invention relates to a method for detecting Network Anomaly in network architectures based on locator/identifier split, the detection flow is as follows: initialization processing, and in ITR: processing data packets, sending a Map-Request, determining whether to send an additional Map-Request, sending the data packet, processing the Map_Reply, processing EID-to-RLOC Cache entry expired; in ETR: processing data packet, processing Map-Request, determining whether the traffic of the ITR currently sending the Map-Request is abnormal, replying to the ITR of which the query traffic is abnormal, replying to ITR of which the query traffic is abnormal. With respect to the characteristic that the network architecture based on locator/identifier split needs to query the relationship between the locator and the identifier for packet delivery, the present invention detects Network Anomaly based on query traffic instead of network data packet traffic. Thus the present invention has the advantages of effectively reducing the investment on detection device, The overhead of exchanging monitoring information and the detection system maintenance cost; facilitating cross domain coordination; and efficiently handling the failures occurring during network operation in time; effectively improve the reliability of the network, being suitable for a large-scale network. | 08-11-2011 |
20110068890 | NTC THIN FILM THERMAL RESISTOR AND A METHOD OF PRODUCING IT - This invention relates to a method for thin film device. The method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. It includes selecting a substrate, a temperature-sensitive layer, inner electrodes, a protective layer and end electrodes. The temperature-sensitive layer is an NTC thin film, the inner electrodes have a comb-shaped structure. The resistance value of the present invention can be regulated by changing material composition and the width, gap, length of comb-shaped electrodes, which are not influenced by the error of the thermistor physical size. In present invention, a high temperature glaze is engaged to smooth the surface of cheaper ceramic substrates. This process reduces the manufacturing cost, improves the structure, enhances the reliability and the yield and thus expands the application scope of the NTC thin film thermistor chips. The invention has an industrial practicability. | 03-24-2011 |