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UNIVERSITE PARIS SUD (PARIS XI)
ORSAY, FR
| UNIVERSITE PARIS SUD (PARIS XI) Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20100012949 | SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM - Substrate, in particular in silicon carbide, covered by a thin film of stoichiometric silicon nitride, for the manufacture of electronic components and method for obtaining said film. | 01-21-2010 |
| 20090294776 | Highly Oxygen-Sensitive Silicon Layer and Method for Obtaining Same - Silicon layer highly sensitive to oxygen and method for obtaining said layer. | 12-03-2009 |