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UNIVERSITE DE VERSAILLES ST QUENTIN EN YVELINES

Versailles, FR

UNIVERSITE DE VERSAILLES ST QUENTIN EN YVELINES Patent applications
Patent application numberTitlePublished
20100244657HALL EFFECT ION EJECTION DEVICE - The disclosure relates to a Hall-effect ion ejection device that comprises a longitudinal axis substantially parallel to the ion ejection direction, and comprises at least: a main ionization and acceleration annular channel, the annular channel being open at its end; an anode extending inside the channel; a cathode extending outside the channel at the outlet thereof; a magnetic circuit for generating a magnetic field in a portion of the annular channel, said circuit including at least an annular inner wall, an annular outer wall and a bottom connecting the inner and outer annular walls and defining the downstream portion of the magnetic circuit; characterised in that the magnetic circuit is arranged so as to create at the outlet of the annular channel a magnetic field independent from the azimuth.09-30-2010

Patent applications by UNIVERSITE DE VERSAILLES ST QUENTIN EN YVELINES