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UNIVERSITÉ DE NEUCHÂTEL
| UNIVERSITÉ DE NEUCHÂTEL Patent applications | ||
| Patent application number | Title | Published |
|---|---|---|
| 20110174371 | METHOD FOR LIMITING EPITAXIAL GROWTH IN A PHOTOELECTRIC DEVICE WITH HETEROJUNCTIONS AND PHOTOELECTRIC DEVICE - A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface. | 07-21-2011 |