| United Solar Ovonic LLC Patent applications |
| Patent application number | Title | Published |
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| 20120107487 | ROLL TO ROLL PATTERNED DEPOSITION PROCESS AND SYSTEM - A continuous roll-to-roll apparatus for providing a patterned deposit of a material onto a moving substrate web includes a payout station for feeding out a substrate web, a take-up station for taking up the substrate web, and a web transport system for advancing the web through the apparatus from the payout station to the take-up station. The apparatus includes at least one deposition station disposed between the payout station and the take-up station, and the deposition station is operative to deposit a material onto the web as it moves therethrough. The apparatus includes a masking system associated with a deposition station. The masking system is operative to dispose a deposition mask in registry with a portion of the length of the moving web. The deposition mask is comprised of a plurality of filaments which are aligned with the longitudinal axis of the web. The filaments are spaced from one another in a direction transverse to the longitudinal axis, and the masking system is further operative to move the filaments along the longitudinal axis, and the filaments function to selectively mask longitudinal portions of the moving web so as to prevent the deposition of material thereupon. Also disclosed are methods for utilizing the system. | 05-03-2012 |
| 20110297219 | METHOD AND MATERIALS FOR THE FABRICATION OF CURRENT COLLECTING STRUCTURES FOR PHOTOVOLTAIC DEVICES - A bus grid structure is affixed to a photovoltaic device utilizing a double-sided adhesive tape in which one of the adhesive layers is electrically conductive and the other is electrically resistive. The tape is affixed to a photovoltaic device via the electrically resistive adhesive. Grid wires are applied to a top electrode of the photovoltaic device, and portions of those grid wires are adhered to the electrically conductive adhesive. A bus bar is also adhered to the electrically conductive adhesive so as to contact the portions of the grid wire. The assembly is laminated so as to bond the grid wires to the photovoltaic device and to the bus bar. Further disclosed are devices fabricated according to this method as well as electrically conductive double adhesive tapes utilized in the process. | 12-08-2011 |
| 20110281378 | ULTRASONIC SYSTEM FOR MEASURING GAS VELOCITY - A system and method for measuring the velocity of gas flow between multiple plasma deposition chambers is provided. A passage atmospherically linking two plasma processing chambers conducts a gas flow therebetween due to differential pressures within the respective chambers. The gas flow velocity is measured by a linear or non-linear ultrasonic energy acoustic path between two transducers located exteriorly to the chambers using the difference in transit time in a forward and reverse direction due to the velocity of gas in the passage. The pressure of process gas in one or more chambers is adjustable based on the measured velocity of gas flow in the passage. | 11-17-2011 |
| 20110220177 | TANDEM PHOTOVOLTAIC DEVICE WITH DUAL FUNCTION SEMICONDUCTOR LAYER - A tandem photovoltaic device includes at least two photovoltaic cells stacked in an optical and electrical series relationship. At least one of the tandem cells includes a dual function semiconductor layer fabricated from a dual function semiconductor material. This dual function layer is an electronically active constituent of the cell. The dual function layer also is optically active and creates a reflective condition which redirects a portion of the light which has passed through the cell back through the cell's active layers to photo generate additional photocurrent. Use of the dual function material eliminates the need for incorporating separate semiconductor and reflective layers in a photovoltaic device. Further disclosed are exemplary formulations of some dual function materials. | 09-15-2011 |
| 20110206830 | REVERSE INTERFEROMETRIC METHOD AND APPARATUS FOR MEASURING LAYER THICKNESS - A reverse interferometric method for the determination of the thickness of a layer of material employs a multi-wavelength light source which generates a light beam which comprises a time-variant series of different monochromatic wavelengths. The beam is reflected from the body of material being measured and is detected by a broad spectrum wavelength detector which produces a signal comprising a series of data points indicating the reflectivity of the sample as a function of the time-variant series of monochromatic wavelengths. A signal processor processes these data points to fit them to a model waveform, and the frequency of the model waveform is used to calculate the thickness of the body of material. Further disclosed are apparatus for carrying out the method and use of the method in a continuous process for the fabrication of thin film materials. | 08-25-2011 |
| 20100252606 | ROLL-TO-ROLL DEPOSITION APPARATUS WITH IMPROVED WEB TRANSPORT SYSTEM - A system for the continuous deposition of a semiconductor material onto one or more webs of substrate material which are advanced therethrough includes a web transport system having a plurality of web support assemblies. Each web support assembly includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The support includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The support includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative to the primary support arm. The system further includes a second biasing member in mechanical communication with the dancer arm. The second biasing member operates to impart a second biasing force to the dancer arm so as to move it from its first position to its second position. A roller is rotatably supported on the dancer arm. The roller is configured to engage a portion of the web. The web support assembly operates to maintain continuous contact between the roller and the moving web of substrate material as it passes through the deposition system. | 10-07-2010 |
| 20100252605 | WEB SUPPORT ASSEMBLY - A web support assembly for a moving web of substrate material includes a base having a primary support arm pivotally mounted thereto so as to be displaceable from a first position to a second position. The web support assembly includes a first biasing member in mechanical communication with the primary support arm. The first biasing member operates to impart a first biasing force to the primary support arm so as to move it from its first position to its second position. The system includes a dancer arm which is pivotally mounted to the primary support arm so as to be displaceable from a first position to a second position relative primary support arm. The web support assembly further includes a second biasing member in mechanical communication with the dancer arm. The second biasing member operates to impart a second biasing force to the dancer arm so as to move it from its first position to its second position. A roller is rotatably supported on the dancer arm. The roller is configured to engage a portion of the web. The web support assembly operates to maintain continuous contact between the roller and the moving web of substrate material as it passes through a multi-station processing system. | 10-07-2010 |
| 20100252604 | PINCH VALVE - A pinch valve includes a valve body having a slot which is configured to allow a web of substrate material to pass therethrough. The valve body has a sealing surface which includes a first curved portion with a first radius of curvature. A dynamic seal element is configured to engage the valve body and includes a second curved portion having a second radius of curvature which is larger than the first radius of curvature. An actuator is operable to selectively bias the dynamic seal element into and out of engagement with the valve body so that when it is biased into engagement with the valve body the web of substrate material is engaged between the sealing surfaces of the dynamic seal element and the valve body. Also disclosed is a processing system which includes the pinch valve. | 10-07-2010 |
| 20100252602 | CONTINUOUS PROCESSING SYSTEM WITH PINCH VALVE - A pinch valve includes a valve body having a slot which is configured to allow a web of substrate material to pass therethrough. The valve body has a sealing surface which includes a first curved portion with a first radius of curvature. A dynamic seal element is configured to engage the valve body and includes a second curved portion having a second radius of curvature which is larger than the first radius of curvature. An actuator is operable to selectively bias the dynamic seal element into and out of engagement with the valve body so that when it is biased into engagement with the valve body the web of substrate material is engaged between the sealing surfaces of the dynamic seal element and the valve body. Also disclosed is a processing system which includes the pinch valve. | 10-07-2010 |
| 20100200413 | SOLUTION DEPOSITION METHOD AND APPARATUS WITH PARTIPHOBIC SUBSTRATE ORIENTATION - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200411 | METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF OXIDE - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200409 | SOLUTION DEPOSITION AND METHOD WITH SUBSTRATE MAKING - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200408 | METHOD AND APPARATUS FOR THE SOLUTION DEPOSITION OF HIGH QUALITY OXIDE MATERIAL - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200067 | SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE - A metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device. The deposition may be carried out in conjunction with a masking member which operates to restrict the deposition of the metal and oxygen material to specific portions of the substrate. In particular instances the deposition may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200060 | SOLUTION BASED NON-VACUUM METHOD AND APPARATUS FOR PREPARING OXIDE MATERIALS - A high quality, highly adherent layer of a metal and oxygen material such as a transparent electrically conductive oxide material is electro deposited onto a substrate in a solution deposition process. The substrate is activated prior to the electro deposition of the metal and oxygen material thereonto by contacting it with a multidentate activating agent which promotes the adhesion of the metal and oxygen material to the substrate. Use of the activation agent eliminates the need to pre-deposit a “seed” layer of the metal and oxygen material onto the substrate by a vacuum deposition process. Process parameters are controlled so as to result in the deposition of a high quality layer of material which is suitable for use in a back reflector structure of a high efficiency photovoltaic device In particular instances the activation method may be implemented in a continuous, roll-to-roll process. Further disclosed are semiconductor devices and components of semiconductor devices made by the present process, as well as apparatus for carrying out the process. | 08-12-2010 |
| 20100200053 | PHOTOVOLTAIC DEVICE HAVING A PROTECTIVE LAYER AND METHODS FOR MANUFACTURING THAT DEVICE - Disclosed herein is a method of making a photovoltaic device having a protective layer affixed to a top surface thereof. The protective layer is comprised of a polymeric material having a fluorinated first surface and a second, opposed, surface which is non-fluorinated or less fluorinated. The protective layer is affixed to the photovoltaic device so that the first surface is farthest therefrom. In some instances, the fluorination may extend to edge portions of the protective layer as well as to any intermediate layers. Further disclosed are devices which incorporate the fluorinated protective layers. | 08-12-2010 |
| 20100117172 | THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS - A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material. | 05-13-2010 |
| 20100116334 | VHF ENERGIZED PLASMA DEPOSITION PROCESS FOR THE PREPARATION OF THIN FILM MATERIALS - A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate. | 05-13-2010 |
| 20090029053 | METHOD FOR STABILIZING SILICONE MATERIAL, STABILIZED SILICONE MATERIAL, AND DEVICES INCORPORATING THAT MATERIAL - Darkening of silicone containing materials caused by exposure to ultraviolet illumination is prevented or reversed by exposure of those materials to an atmosphere containing a reactive species, which may comprise activated oxygen. The activated oxygen may be generated by ultraviolet irradiation of the silicone material in an oxygen containing atmosphere. In other instances, the activated oxygen may comprise ozone or some other activated oxygen species. In yet other instances, the reactive species may comprise an oxygen containing material such as nitrous oxide or nitrates. It may also comprise other materials such as halogens, atomic hydrogen, protons or the like. The treatment may be applied prior to ultraviolet exposure so as to prevent or minimize darkening, or it may be applied after darkening has occurred for purposes of reversing the darkening. Also disclosed are silicone materials which have been treated so as to make them resistant to ultraviolet induced darkening, as well as photovoltaic devices which have such silicone materials coated thereupon. | 01-29-2009 |
