| United Memories, Inc. Patent applications |
| Patent application number | Title | Published |
|---|
| 20110209033 | CIRCUIT AND TECHNIQUE FOR REDUCING PARITY BIT-WIDTHS FOR CHECK BIT AND SYNDROME GENERATION FOR DATA BLOCKS THROUGH THE USE OF ADDITIONAL CHECK BITS TO INCREASE THE NUMBER OF MINIMUM WEIGHTED CODES IN THE HAMMING CODE H-MATRIX - A circuit and technique for reducing parity bit-widths for check bit and syndrome generation is implemented through the use of additional check bits to increase the number of minimum weighted codes in the Hamming Code H-Matrix. The circuit and technique of the present invention may be implemented while adding no additional correction/detection capability, in order to reduce the number of data bits that are used for each check bit/syndrome generation and to reduce the width of the parity generating circuitry. | 08-25-2011 |
| 20090106488 | STATIC RANDOM ACCESS MEMORY (SRAM) COMPATIBLE, HIGH AVAILABILITY MEMORY ARRAY AND METHOD EMPLOYING SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (DRAM) IN CONJUNCTION WITH A DATA CACHE AND SEPARATE READ AND WRITE REGISTERS AND TAG BLOCKS - A high-speed, static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate data read and write registers and tag blocks. The inclusion of separate data read and write registers allows the device to effectively operate at a cycle time limited only by the DRAM subarray cycle time. Further, the inclusion of two tag blocks allows one to be accessed with an externally supplied address and the other to be accessed with a write-back address, thus eliminating the requirement for a single tag to execute two read-modify write cycles in one DRAM cycle time. | 04-23-2009 |
| 20090094497 | DATA INVERSION REGISTER TECHNIQUE FOR INTEGRATED CIRCUIT MEMORY TESTING - A data inversion register technique for integrated circuit memory testing in which data input signals are selectively inverted in a predetermined pattern to maximize the probability of identifying failures during testing. In accordance with the technique of the present invention, on predetermined input/outputs (I/Os,) data inputs may be inverted to create a desired test pattern (such as data stripes) which are “worst case” for I/O circuitry or column stripes which are “worst case” for memory arrays. A circuit in accordance with the technique of the present invention then matches the pattern for the data out path, inverting the appropriate data outputs to obtain the expected tester data. In this way, the test mode is transparent to any memory tester. | 04-09-2009 |
| 20090077453 | TECHNIQUE FOR REDUCING PARITY BIT-WIDTHS FOR CHECK BIT AND SYNDROME GENERATION FOR DATA BLOCKS THROUGH THE USE OF ADDITIONAL CHECK BITS TO INCREASE THE NUMBER OF MINIMUM WEIGHTED CODES IN THE HAMMING CODE H-MATRIX - A technique for reducing parity bit-widths for check bit and syndrome generation through the use of additional check bits to increase the number of minimum weighted codes in the Hamming Code H-Matrix. The technique of the present invention may be implemented while adding no additional correction/detection capability, in order to reduce the number of data bits that are used for each check bit/syndrome generation and to reduce the width of the parity generating circuitry. | 03-19-2009 |
| 20090073786 | EARLY WRITE WITH DATA MASKING TECHNIQUE FOR INTEGRATED CIRCUIT DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICES AND THOSE INCORPORATING EMBEDDED DRAM - An early write with data masking technique for dynamic random access memory (DRAM) devices and those devices incorporating embedded DRAM. The technique of the present invention allows for early writes to DRAM arrays with direct bit, byte or word data masking capability. | 03-19-2009 |
| 20090072879 | SHORT-CIRCUIT CHARGE-SHARING TECHNIQUE FOR INTEGRATED CIRCUIT DEVICES - A short-circuit charge-sharing technique which allows charge-sharing between two or more circuits with a simple shorting transistor controlled to achieve the desired operating voltage levels. The shorting transistor which can be either a P-channel Metal Oxide Semiconductor (PMOS) or an N-channel Metal Oxide Semiconductor (NMOS) device and can be controlled utilizing the same clock that enables the drive of the signals between which charge-sharing occurs. In operation, the desired operating voltage levels can be regulated by increasing and decreasing the pulse width of the control circuit output to the gate of the shorting transistor. | 03-19-2009 |
| 20090049350 | ERROR CORRECTION CODE (ECC) CIRCUIT TEST MODE - An ECC circuit and method for an integrated circuit memory allows a user to enter a test mode and select a specific location to force a known failure on any memory chip, whether it is fully functional or partially functional. Additional circuitry is placed in the data path where existing buffers and drivers are already located, minimizing any additional speed loss or area penalty required to implement the forced data failure. In a first general method, a logic zero is forced onto a selected data line at a given time. In a second general method, a logic one is forced onto a selected data line at a given time. | 02-19-2009 |
| 20090015311 | LOW SKEW CLOCK DISTRIBUTION TREE - A clock distribution tree for an integrated circuit memory includes a set of data drivers, a corresponding set of input buffers coupled to the data drivers, a first clock distribution tree coupled to the data drivers, and a second clock distribution tree coupled to the input buffers, wherein the first and second clock distribution tree are substantially matched and mirrored distribution trees. The line width of the first clock distribution tree is substantially the same as the line width of the second clock distribution tree. The line spacing of the first clock distribution tree is substantially the same as the line spacing of the second clock distribution tree. Numerous topologies for the first and second clock distribution trees can be accommodated, as long as they are matched and mirrored. Valid times for the integrated circuit memory are maximized and data and clock skew is minimized. | 01-15-2009 |
| 20080313379 | MULTIPLE BUS CHARGE SHARING - A charge-sharing circuit includes a first input bus pair, a second input bus pair, and an output bus pair. A capacitor is coupled between a first internal node and a second internal node. A first circuit selectively couples the first internal node to the first input bus pair, the second input bus pair and the output bus pair. A second circuit selectively couples the second internal node to the first input bus pair, the second input bus pair and the output bus pair. A third circuit selectively couples the first input bus pair to a reference voltage. A fourth circuit selectively couples the second input bus pair to the reference voltage. The third circuit is activated when the first input bus pair is inactive and charge is shared between the second bus pair and the output bus pair. The fourth circuit is activated when the second input bus pair is inactive and charge is shared between first bus pair and the output bus pair. | 12-18-2008 |
