| UNIRAM TECHNOLOGY INC. Patent applications |
| Patent application number | Title | Published |
| 20110133773 | High Performance Output Drivers and Anti-Reflection Circuits - Long existing performance, noise, and power consumption problems of known output drivers are solved by using n-channel transistors as pull up transistors and/or p-channel transistors as pull down transistors for high performance output drivers. On-die termination-circuit-branches provide effective anti-reflection functions for multiple chips connected to the same transmission line(s). | 06-09-2011 |
| 20110133772 | High Performance Low Power Output Drivers - Long existing performance, noise, and power consumption problems of known output drivers are solved by using n-channel transistors as pull up transistors and/or p-channel transistors as pull down transistors for high performance output drivers. In combination with RC termination circuits, output drivers of the present invention can be fully compatible with HSTL, SSTL, GTL, BTL, SATA, PCIe, LVDS, MIPI, MDDI or other partial voltage interfaces. | 06-09-2011 |
| 20110089555 | AREA REDUCTION FOR SURFACE MOUNT PACKAGE CHIPS - Using side-wall conductor leads insulated by side-wall insulators to form package level conductor leads for active circuits manufactured on silicon substrate, the preferred embodiments of the present invention significantly reduces the areas of surface mount package chips. Besides area reduction, these methods also provide significant cost saving and reduction in parasitic impedance. | 04-21-2011 |
| 20100237904 | High Performance Output Drivers and Anti-Reflection Circuits - Long existing performance, noise, and power consumption problems of known output drivers are solved by using n-channel transistors as pull up transistors and/or p-channel transistors as pull down transistors for high performance output drivers. On-die termination-circuit-branches provide effective anti-reflection functions for multiple chips connected to the same transmission line(s). | 09-23-2010 |
| 20100002532 | ULTRA-LOW POWER HYBRID SUB-THRESHOLD CIRCUITS - The present invention provides a solution to avoid the robustness problems of sub-threshold circuits by switching small parts of circuits to nominal-voltage only when they are being used, and switching them back to sub-threshold levels when the operation finishes. Such “hybrid sub-threshold” approach is capable of supporting ultra-low power operation without the disadvantages of sub-threshold circuits. | 01-07-2010 |
| 20090103387 | HIGH PERFORMANCE HIGH CAPACITY MEMORY SYSTEMS - The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications. | 04-23-2009 |
| 20090103373 | HIGH PERFORMANCE HIGH CAPACITY MEMORY SYSTEMS - The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications. | 04-23-2009 |
| 20090103372 | HIGH PERFORMANCE HIGH CAPACITY MEMORY SYSTEMS - The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications. | 04-23-2009 |