| ULVAC, INC. Patent applications |
| Patent application number | Title | Published |
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| 20120134867 | DRY PUMP - The present invention provides a dry pump including: a center cylinder which includes: a plurality of pump chambers containing an upper stage pump chamber that communicates with an intake port and a lower stage pump chamber that communicates with a discharge port; a plurality of rotors contained in the plurality of the pump chambers; a rotating shaft that is a rotation axis of the rotor; and a side face on which a communication hole is formed, the side face being intersected by the rotating shaft extending in the axial direction, and being provided adjacent to the lower stage pump chamber, and a side cover which covers the side face with the communication hole to form a space. | 05-31-2012 |
| 20120132523 | Method of Manufacturing a Sputtering Target and Sputtering Target - [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains. | 05-31-2012 |
| 20120129278 | DRY ETCHING METHOD - A dry etching method includes a first step and a second step. The first step includes generating a first plasma from a gas mixture, which includes an oxidation gas and a fluorine containing gas, and performing anisotropic etching with the first plasma on a silicon layer to form a recess in the silicon layer. The second step includes alternately repeating an organic film forming process whereby an organic film is deposited on the inner surface of the recess with a second plasma, and an etching process whereby the recess covered with the organic film is anisotropically etched with the first plasma. When an etching stopper layer is exposed from a part of the bottom surface of the recess formed in the first step, the first step is switched to the second step. | 05-24-2012 |
| 20120121818 | COATING SURFACE PROCESSING METHOD AND COATING SURFACE PROCESSING APPARATUS - A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating. | 05-17-2012 |
| 20120119269 | METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR - A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor. | 05-17-2012 |
| 20120118732 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber. | 05-17-2012 |
| 20120118725 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method of forming a coating on a surface of an object to be processed includes disposing a target forming a base material of the coating and the object to be processed in a chamber so as to face each other, and generating a magnetic field through which a vertical line of magnetic force locally passes from a sputter surface of the target toward a surface to be film formed of the object to be processed at predetermined intervals; generating plasma in a space between the target and the object to be processed by introducing a sputter gas into the chamber, controlling a gas pressure in the chamber to a range of 0.3 Pa to 10.0 Pa, and applying a negative DC voltage to the target; and inducing and depositing the sputter particles on the object to be processed and forming the coating, while controlling flying direction of the sputter particles generated by sputtering the target. | 05-17-2012 |
| 20120116586 | TEACHING APPARATUS OF ROBOT AND TEACHING METHOD OF ROBOT - A teaching method of a robot which supports a transported matter with a hand and transports the transported matter between two or more reception spots, includes: a jig disposing process of disposing a positioning jig at the reception spot so as to have the same center axis as the transported matter when the transported matter is placed at the reception spot; and a teaching process of moving the hand to a position at which an abutting portion of the hand abuts the positioning jig at each of the reception spots and teaching the position of the hand to a controller. | 05-10-2012 |
| 20120114854 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time 0 to t | 05-10-2012 |
| 20120111722 | FILM-FORMING APPARATUS - There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state. | 05-10-2012 |
| 20120103801 | FILM FORMATION APPARATUS - A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section. | 05-03-2012 |
| 20120103793 | VACUUM FILM-FORMING APPARATUS AND POSITION DETECTION METHOD FOR SHUTTER PLATE OF VACUUM FILM-FORMING APPARATUS - At the time of detecting a position of a shutter plate, a laser light, for instance, is radiated from a detector (an optical sensor). The radiated laser light reaches the shutter plate through a window of a chamber. Then, the laser light is reflected by the surface of the shutter plate and re-enters the detector. The detector detects the time required from the emission of the laser light to the entry of the reflected light. | 05-03-2012 |
| 20120097534 | MAGNETRON SPUTTERING CATHODE AND FILM FORMATION APPARATUS - A magnetron sputtering cathode includes: a yoke; a magnetic circuit having a central magnet portion, a peripheral edge magnet portion, an auxiliary magnet portion, and a parallel area; and a backing plate. The central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are disposed so that polarities of tip portions of the central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are different from each other at portions between adjacent magnet portions. The magnetic field profile observed from above of the backing plate and the magnetic flux density in a horizontal direction are determined so that the magnetic flux density in a first area is a positive value and the magnetic flux density in a second area is a negative value with respect to a position corresponding to the central magnet portion as a boundary. | 04-26-2012 |
| 20120097527 | FILM FORMATION APPARATUS AND FILM FORMING METHOD - A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id| 04-26-2012 | |
| 20120094399 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: forming a photoelectric converter including a plurality of compartment elements, the compartment elements adjacent to each other being electrically connected; determining the compartment element having a structural defect in the photoelectric converter; narrowing down a region in which the structural defect exists in the compartment element based on a resistance distribution which is obtained by measuring resistances of a plurality of portions between the compartment elements adjacent to each other, image-capturing the inside of the narrowed region in which the structural defect exists by use of an image capturing section, accurately determining a position of the structural defect from the obtained image so that a portion in which the structural defect exists in the compartment element is restricted; and removing the structural defect by irradiating the portion in which the structural defect exists with a laser beam. | 04-19-2012 |
| 20120082778 | VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD - The present invention aims to provide a technology, which uses an apparatus having a simple configuration to efficiently form a film with uniform film thickness and film quality when continuously forming a film by vacuum deposition of highly reactive lithium. A vacuum deposition system of the present invention has a vacuum deposition chamber wherein an evaporation material is deposited on a substrate by deposition, a substrate supplying/replacing system, connected to the vacuum deposition chamber, for performing supplying and replacing the substrate to and from the vacuum deposition chamber, and a material supplying/replacing system, connected to the vacuum deposition chamber, for performing the supplying and the replacing of the evaporation material to and from the vacuum deposition chamber. | 04-05-2012 |
| 20120068265 | WIRING LAYER STRUCTURE AND PROCESS FOR MANUFACTURE THEREOF - This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer. | 03-22-2012 |
| 20120064716 | FILM FORMING APPARATUS AND A BARRIER FILM PRODUCING METHOD - A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed. | 03-15-2012 |
| 20120060533 | PRESSURE REDUCTION SYSTEM AND VACUUM TREATMENT DEVICE - A depressurization system includes a plurality of depressurization devices, each of which includes a cooling; and a compression device. The compression device includes a compression unit, which is provided with an AC electric motor, and supplies a compressed coolant to each cooling unit at a flow rate corresponding to a rotation speed of the AC electric motor. Each cooling unit supplements gas when adiabatically expanding the compressed coolant. The depressurization system also includes a temperature detection unit, which detects the temperature of each cooling unit, an inverter device, which is capable of changing a frequency of AC power supplies to the AC electric motor, and a frequency controller, which controls an output frequency of the inverter device. The frequency controller relatively raises the output frequency of the inverter device when the temperature of the cooling unit of at least one depressurization device of the depressurization devices is greater than or equal to a first threshold value, and relatively lowers the output frequency of the inverter device when the temperature of the cooling unit of all of the depressurization devices decreases to less than the first threshold value. | 03-15-2012 |
| 20120055788 | TARGET FOR SPUTTERING - A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al | 03-08-2012 |
| 20120055787 | Sputtering Target and Method of Processing a Sputtering Target - [Object] To provide a sputtering target allowing component metals to be separated from each other by a simple process and a method of processing the sputtering target. | 03-08-2012 |
| 20120045190 | VACUUM HEATING DEVICE AND VACUUM HEAT TREATMENT METHOD - A uniform voltage is applied to loads even to other than a multiple of three loads made of heating lamps connected in parallel to each other, without causing any burden on a primary side. The number of loads is divided into a multiple of three and a multiple of two. A three-phase AC voltage is applied to three primary windings, which are connected as a Y-connection or a Δ-connection. Secondary windings, which are each magnetically coupled to a primary winding of a plurality of three-phase transformers and have the same number of turns, are connected with the multiple of three loads. The number of turns of the M-seat primary winding of a Scott transformer is divided into two at a midpoint, to which an end of the T-seat primary winding having a number of turns equal to (√3)/2 times that of the M-seat primary winding, is connected and to which the three-phase AC voltage is applied. The M-seat primary winding and the T-seat primary winding in at least one Scott transformers are each magnetically coupled with each of the secondary windings having the same number of turns. The multiple of two loads are connected to the secondary windings so that no secondary windings appear without a load connected thereto. Thus, an AC voltage can be uniformly applied to the heating lamps without increasing any burden on the primary side. | 02-23-2012 |
| 20120037502 | Sintered Body for ZnO-Ga2O3-Based Sputtering Target and Method of Producing the Same - [Object] To provide a sintered body for a ZnO—Ga | 02-16-2012 |
| 20120034731 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD - A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device. The system includes: an i-layer-formation reaction chamber comprising at least a first film formation section, a second film formation section, and a third film formation section, the i-layer-formation reaction chamber forming the i-type semiconductor layer, the first film formation section, the second film formation section, and the third film formation section being sequentially arranged along a transfer direction in which the substrate is transferred; and a plurality of door valves separating the first film formation section, the second film formation section, and the third film formation section so that the length of the second film formation section is greater than the lengths of the first film formation section and the third film formation section in the transfer direction. | 02-09-2012 |
| 20120031650 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer( | 02-09-2012 |
| 20120025395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO | 02-02-2012 |
| 20120018664 | METHOD OF PRODUCING A LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, LEAD ZIRCONIUM TITANATE-BASED SINTERED BODY, AND LEAD ZIRCONIUM TITANATE-BASED SPUTTERING TARGET - To obtain a method of producing a high-density lead zirconium titanate-based sintered body having uniform crystalline phases and containing a large amount of PbO, provided is a method of producing a lead zirconium titanate-based sintered body, including: producing a pre-sintered body by sintering raw material powder of lead zirconium titanate having a stoichiometric composition at a temperature of 900° C. or more and 1,200° C. or less; pulverizing the pre-sintered body; producing lead-excessive mixed powder by adding PbO powder to powder obtained by pulverizing the pre-sintered body; and sintering the lead-excessive mixed powder at a temperature lower than the sintering temperature of the pre-sintered body. Because the sintering process is divided into two stages, a high-density (e.g., 95% or more) PZT sintered body constituted only of PZT having a stoichiometric composition in which PbZrO | 01-26-2012 |
| 20120015473 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM, AND METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer. | 01-19-2012 |
| 20120015453 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: forming a photoelectric converter which has a plurality of compartment elements that are separated by a scribing line and in which adjacent compartment elements are electrically connected; detecting a structural defect existing in the compartment element; specifying a position in which the structural defect exists, as distance data indicating a distance between the structural defect and the scribing line that is closest to the structural defect; and removing a region in which the structural defect exists based on the distance data. | 01-19-2012 |
| 20120008925 | TEMPERATURE SENSING DEVICE AND HEATING DEVICE - A technology to control temperature of a large substrate to be heated. A temperature sensing device is disposed lateral to a region where a radiation heater faces a substrate to be heated inside a heating chamber. A heating device has the heating chamber, the radiation heater, a power-supply device, a substrate-holding device, a control device, and the temperature sensing device. A control program is built into the control device, according to which the power-supply device controls the power applied to the radiation heater to generate heat such that the temperature of the temperature measurement substrate detected by a thermocouple of the temperature sensing device becomes a set temperature. Furthermore, a circulation passage is disposed in close contact with the temperature-sensing device, and with a coolant flowing through the circulation passage, the temperature of the temperature measurement substrate can be cooled from the set temperature to an initial temperature. | 01-12-2012 |
| 20120003841 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts. | 01-05-2012 |
| 20110315985 | SENSOR-FITTED SUBSTRATE AND METHOD FOR PRODUCING SENSOR-FITTED SUBSTRATE - A sensor-fitted substrate allowing a sensor-fitted wafer for measuring the temperature or strain to be produced inexpensively, moreover, allowing measurements of the temperature or strain to be carried out with satisfactory accuracy, and a method for producing such a sensor-fitted substrate. An undercoat film is formed on the surface of a substrate, the film being configured, compared to when no undercoat film is formed, to allow the strength of close contact of a dispersed nano-particle ink with the substrate to be increased, the diffusion of the dispersed nano-particle ink into the substrate to be suppressed, and the growth of metal crystal particles contained in the dispersed nano-particle ink to be suppressed. A wiring pattern of the sensor is traced on the surface of the undercoat film of the substrate surface by using the dispersed nano-particle ink, and the dispersed nano-particle ink is baked and metalized. | 12-29-2011 |
| 20110315872 | OXYGEN DETECTION METHOD, AIR LEAKAGE DETERMINATION METHOD, GAS COMPONENT DETECTION DEVICE, AND VACUUM PROCESSING APPARATUS - An oxygen detection method, includes: preparing a grid, an ion collector, and a filament in which an oxide are formed on a surface of metal; controlling a filament current flowing to the filament so that an emission current becomes constant; discharging thermionic electrons which are caused by heat generation by applying the filament current, and generating ions by ionizing a gas; capturing the ions with the ion collector; and detecting oxygen being present in a vacuum processing chamber by measuring a filament current value. | 12-29-2011 |
| 20110315191 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A frameless solar cell panel includes: a stacked body ( | 12-29-2011 |
| 20110309444 | THIN FILM TRANSISTOR HAVING A BARRIER LAYER AS A CONSTITUTING LAYER AND Cu-ALLOY SPUTTERING TARGET USED FOR SPUTTER FILM FORMATION OF THE BARRIER LAYER - This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target. | 12-22-2011 |
| 20110308565 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A solar cell module includes: a plurality of photovoltaic cells including a layered body in which a first electrode layer, a power generation layer, and a second electrode layer are layered in series, the photovoltaic cells being electrically connected with each other in series; a scribe line separating the photovoltaic cells that are adjacent to each other in the photovoltaic cells; a scribe hole that is formed so as to penetrate through the power generation layer and the second electrode layer; and a bypass pathway that is formed of a shunt region, the shunt region being generated at a periphery of the scribe hole. | 12-22-2011 |
| 20110300694 | ELECTRODE CIRCUIT, FILM FORMATION DEVICE, ELECTRODE UNIT, AND FILM FORMATION METHOD - An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit. | 12-08-2011 |
| 20110298738 | Touch panel - A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken. | 12-08-2011 |
| 20110294256 | FILM-FORMING METHOD FOR FORMING PASSIVATION FILM AND MANUFACTURING METHOD FOR SOLAR CELL ELEMENT - The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portion | 12-01-2011 |
| 20110292561 | TRAY FOR TRANSPORTING WAFERS AND METHOD FOR FIXING WAFERS ONTO THE TRAY - A tray for transporting a wafer is herein provided, which can control the temperature of the wafer upon the processing thereof, and which can easily fix the wafer without reducing the effective area on the surface of the wafer and without requiring much time for the adhesion of the wafer thereto and without requiring any post-treatment after the wafer is detached from or attached to the tray. The tray | 12-01-2011 |
| 20110272021 | METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL - A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film. | 11-10-2011 |
| 20110265921 | Ta SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME - A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method. | 11-03-2011 |
| 20110256659 | METHOD FOR MANUFACTURING SOLAR CELL, ETCHING DEVICE, AND CVD DEVICE - A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film. | 10-20-2011 |
| 20110256003 | DRY VACUUM PUMP - Between an exhaust chamber and a lubrication chamber, a second seal that seals between a cylinder that partitions the exhaust chamber and a first shaft and a first seal that seals between a side cover that partitions the lubrication chamber and the first shaft are provided. A gas introduction space to which a seal gas is supplied is provided between the second seal | 10-20-2011 |
| 20110248182 | ION IMPLANTING APPARATUS - An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured. | 10-13-2011 |
| 20110242700 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - The following abstract replace prior abstract in the application. It is an object to provide a simple and practical method capable of producing a magnetic storage medium of a type such as a bit-patterned type, a magnetic storage medium of the above-mentioned type and an information storage device which may be produced by such a simple and practical method, and in a method of producing a magnetic disk, there are performed: a film-forming process of forming, on a glass substrate | 10-06-2011 |
| 20110240600 | VACUUM PROCESSING METHOD AND VACUUM PROCESSING APPARATUS - A processing gas is introduced to remove an oxide film on the surface of a silicon substrate | 10-06-2011 |
| 20110233550 | Method for producing a thin film transistor, and a thin film transistor - Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer. | 09-29-2011 |
| 20110232573 | Catalytic Chemical Vapor Deposition Apparatus - [Object] To provide a catalytic chemical vapor deposition apparatus capable of prolonging the service life of a catalyst wire. | 09-29-2011 |
| 20110227294 | Seal Mechanism and Treatment Apparatus - [Object] To provide a seal mechanism that reduces a maintenance frequency for replenishment of a lubricating material and has small friction resistance, and a treatment apparatus equipped with the seal mechanism.
| 09-22-2011 |
| 20110212272 | MANUFACTURING METHOD FOR MAGNETIC RECORDING MEDIUM - A magnetic recording medium having a high magnetic pattern contrast is manufactured. By changing an acceleration voltage that accelerates ions in a process gas, depths (peak depths D | 09-01-2011 |
| 20110211936 | CONVEYING DEVICE AND VACUUM APPARATUS - The present invention provides a technology for holding an object to be reliably conveyed for the sake of high speed conveyance not only in a low temperature environment but also in a high temperature environment, and for reducing dust while conveying the object to be conveyed. A conveying device includes a link mechanism, which can expand and contract, has a plurality of arms to which power from a drive source is transmitted, and a mounting section which is connected to an operating tip section of the link mechanism through a drive link section and on which a substrate is mounted. The mounting section has latch sections for making contact with and latching side portions of the substrate. The drive link sections of the link mechanism are provided with cam mechanism-based pressing means. The pressing means includes cam drive surfaces which are formed on the drive link sections of the link mechanism, and a follower mechanism section having a protruded-shaped pressing section which has follower rollers being in contact with and capable of following the cam drive surfaces and is guided and moved toward the latch sections of the mounting section by movement of the follower rollers. | 09-01-2011 |
| 20110211027 | PRINT HEAD, PRINTER - Vibration is prevented from being transmitted via a fixed substrate. In order to set the resonance frequencies of the vibration of piezoelectric vibrators to be different from each other, the piezoelectric vibrators having different lengths are attached to the same fixed substrate. Even if residual vibration of a pressure generation chamber, which is expanded/contracted by a piezoelectric vibrator to which a voltage is applied, is transmitted to the fixed substrate; and even if the vibration is transmitted to another piezoelectric vibrator via the fixed substrate; another piezoelectric vibrator does not vibrate because the resonance frequencies between the piezoelectric vibrators are different from each other. Consequently, the pressure generation chamber in contact with the piezoelectric vibrator is not expanded or contracted by the vibration. | 09-01-2011 |
| 20110211026 | PRINT HEAD, PRINTER - Vibration is prevented from being transmitted via a common ink chamber or a fixed substrate. A porous member is disposed between the common ink chamber and a pressure generation chamber so that a discharge liquid passes through the interior of the porous member to move from the common ink chamber to the pressure generation chamber. Vibration generated in one pressure generation chamber is attenuated through the porous member when the vibration is transmitted to another pressure generation chamber via the common ink chamber; and thus, no cross-talk is generated. Furthermore, when piezoelectric vibrators having different lengths are mounted on the same fixed substrate and have the resonance frequencies different from each other, vibration is not transmitted to another pressure generation chamber via the fixed substrate and the piezoelectric vibrator; and therefore, the cross-talk is much less likely to be generated. | 09-01-2011 |
| 20110209830 | Take-Up Vacuum Processing Apparatus - [Object] To provide a take-up vacuum processing apparatus that prevents breakage due to heat generation and occurrence of dielectric breakdown and is suitable for life extension. | 09-01-2011 |
| 20110207261 | MASK AND FILM FORMATION METHOD USING THE SAME - A mask includes: a tabular first section which includes a side portion and an opening portion formed at a position corresponding to a film formation region of a substrate and on which the substrate is to be disposed so that the first section overlaps a face of the substrate on which a film is to be formed; and a second section which is provided along the side portion of the first section, and covers at least one of portions of a side face of the substrate, wherein second sections of two adjacent masks overlap each other and a superposed section is thereby formed when a plurality of masks are arrayed in a lateral direction thereof. | 08-25-2011 |
| 20110205663 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - It is an object to produce a magnetic storage medium of a high recording density by a production method that does not impair mass productivity, and a magnetic storage medium | 08-25-2011 |
| 20110204519 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers. | 08-25-2011 |
| 20110204466 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber. | 08-25-2011 |
| 20110201150 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-18-2011 |
| 20110200741 | ORGANIC THIN FILM DEPOSITION DEVICE, ORGANIC EL ELEMENT MANUFACTURING DEVICE, AND ORGANIC THIN FILM DEPOSITION METHOD - An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time. | 08-18-2011 |
| 20110200481 | WATER-COLLAPSIBLE Al COMPOSITE MATERIAL, Al FILM AND Al POWDER CONSISTING OF THIS MATERIAL, AND METHODS FOR PREPARATION THEREOF, AS WELL AS COMPONENT MEMBERS FOR CONSTITUTING FILM-FORMING CHAMBERS AND METHOD FOR THE RECOVERY OF FILM-FORMING MATERIALS - In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof. Film-forming operations are continued over a long period of time using the component member for a film-forming chamber provided with the water-collapsible Al film and then film-forming materials can be recovered from the component member on which the film-forming materials are deposited in a substantial thickness. | 08-18-2011 |
| 20110199442 | DISCHARGE DEVICE - The back pressure of an ink tank is controlled. A porous body is arranged inside the ink tank, the lower end of the porous body contacts an ink, and the ink ascends inside the porous body due to a capillary force. The upper end of the porous body is not immersed in the ink, and a maximum ascending force acts upon the ink stored in the ink tank. Therefore, the ink does not leak from a discharge head located lower than the ink tank. Further, because the ink is accumulated under the porous body and the amount of the ink contacting the porous body is small, components of the ink are less susceptible to deterioration. | 08-18-2011 |
| 20110199441 | DISCHARGE UNIT AND DISCHARGE APPARATUS - The backing pressure of an ink tank is controlled. The ink tank is connected to a pressure control apparatus. The pressure control apparatus has first and second check valves. When the internal pressure of the ink tank becomes smaller than that of outside atmosphere by a first predetermined pressure or more, the first check valve is switched into an open state to connect the outside atmosphere and the ink tank. To the contrary, when the internal pressure of the ink tank becomes larger than that of outside atmosphere by a second predetermined pressure or more, the second check valve is switched to an open state to connect the ink tank with the outside atmosphere. Therefore, the internal pressure of the ink tank is controlled precisely enough to stabilize the meniscus. | 08-18-2011 |
| 20110198555 | CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF - A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises an underlayer film formed at least on a bottom portion of the contact hole and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole. | 08-18-2011 |
| 20110198213 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-18-2011 |
| 20110195562 | Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor - [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. | 08-11-2011 |
| 20110194961 | DRY PUMP - A dry pump includes: a plurality of cylinders; a pump chamber formed in each of the cylinders; a division wall separating pump chambers adjacent to each other; a plurality of rotors contained inside pump chambers; a rotating shaft that serves as an axis of rotation of the rotor; and a cooling medium path which is formed inside the division wall and through which a cooling medium passes. | 08-11-2011 |
| 20110194207 | METHOD OF PRODUCING MAGNETIC STORAGE MEDIUM, MAGNETIC STORAGE MEDIUM AND INFORMATION STORAGE DEVICE - It is an object to provide a simple method capable of producing a magnetic storage medium, a magnetic storage medium and an information storage device which may be produced by a simple production method with a high recording density, and a magnetic disk is produced by a production method having: a film-forming process of forming, on a substrate | 08-11-2011 |
| 20110194181 | FILM FORMING METHOD FOR ANTIREFLECTION FILM, ANTIREFLECTION FILM, AND FILM FORMING DEVICE - A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas. | 08-11-2011 |
| 20110192719 | SPUTTERING TARGET FOR FORMING THIN FILM TRANSISTOR WIRING FILM - This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included. | 08-11-2011 |
| 20110192546 | WATER-COLLAPSIBLE Al COMPOSITE MATERIAL, Al FILM AND Al POWDER CONSISTING OF THIS MATERIAL, AND METHODS FOR PREPARATION THEREOF, AS WELL AS COMPONENT MEMBERS FOR CONSTITUTING FILM-FORMING CHAMBERS AND METHOD FOR THE RECOVERY OF FILM-FORMING MATERIALS - In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof. Film-forming operations are continued over a long period of time using the component member for a film-forming chamber provided with the water-collapsible Al film and then film-forming materials can be recovered from the component member on which the film-forming materials are deposited in a substantial thickness. | 08-11-2011 |
| 20110192047 | FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD - [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles. | 08-11-2011 |
| 20110189817 | MANUFACTURING METHOD FOR SOLAR CELL - A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask. | 08-04-2011 |
| 20110189498 | EVAPORATING MATERIAL AND METHOD OF MANUFACTURING THE SAME - There is provided an evaporating material of thin plate shape which can be manufactured at a reduced cost and at high productivity, the evaporating material being adapted for use in enhancing the coercive force of neodymium-iron-boron sintered magnet by heat treatment while evaporating Dy in vacuum or in reduced-pressure inert gas atmosphere. The evaporating material of this invention has a core member la made of a fire-resistant metal having a multiplicity of through holes, and is made by melting a rare-earth metal or an alloy thereof so as to get adhered to, and solidified on, the core member. In this case, the above-mentioned adhesion is performed by dipping the core member into a molten bath of the rare-earth metal or an alloy thereof, and pulling it out of the molten bath. | 08-04-2011 |
| 20110189384 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; a first carrier that holds a pre-processed substrate; and a second carrier that holds a post-processed substrate, wherein the loading-ejecting chamber simultaneously stores the first carrier and the second carrier. | 08-04-2011 |
| 20110186225 | MAGNETIC RECORDING MEDIUM MANUFACTURING DEVICE - A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state. The magnetic recording medium manufactured device is provided with a substrate carrier for carrying the substrate into which the ion beam is implanted from the ion implantation chamber to the ashing chamber. | 08-04-2011 |
| 20110180402 | Vacuum Processing Apparatus - To provide a vacuum processing apparatus capable of supporting and conveying a substrate by a method suitable for a processing content in each processing step and capable of suppressing various mechanisms provided within a processing chamber from being adversely affected. More particularly, the CVD chamber of the apparatus is configured to be horizontal, and hence the above-mentioned problem can be solved. Further, by configuring a sputtering apparatus as the vertical type processing apparatus, problems with abnormal electrical discharge can be solved. | 07-28-2011 |
| 20110180388 | Plasma Processing Method and Plasma Processing Apparatus - [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. | 07-28-2011 |
| 20110176576 | MELTING FURNACE - A melting furnace of the present invention includes a sealed container containing an inert gas atmosphere, a crucible that is located inside the sealed container and melts a raw material by induction heating, and a crucible cooling mechanism. The crucible cooling mechanism includes a pipe portion that includes an intake that communicates with the sealed container and enables the inert gas to be discharged from the sealed container, and an outlet that enables the inert gas to be introduced into the sealed container, a heat exchange portion that is located partway along the pipe portion, and a gas transporting portion that is located partway along the pipe portion. | 07-21-2011 |
| 20110171757 | METHOD OF MANUFACTURING PHOTOVOLTAIC CELL - Provided is a method of manufacturing a photovoltatic cell according to the present invention, the photovoltatic cell including a substrate, and a structure in which a first conductive layer, a photoelectric conversion layer and a second conductive layer are superposed on the substrate in this order; the structure is electrically separated by a predetermined size to form a plurality of compartment elements; and the compartment elements adjacent to each other are electrically connected to each other, the method including: a defect region specifying step of specifying a region in which a structural defect exists from the plurality of compartment elements; and a repairing step of irradiating the region or the periphery thereof with a laser beam to remove the structural defect, wherein the repairing step includes a step α of irradiating the structure with a first laser to remove or separate the region, and a step β of irradiating an end portion of the structure generated by the removal or separation with a second laser to clean the end portion, and wherein the second laser uses a laser obtained by defocusing the first laser so that a focus position thereof is away from the substrate. | 07-14-2011 |
| 20110162710 | SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD - A solar cell includes: a photoelectric converter in which a first electrode layer, a photoelectric conversion layer, and a second electrode layer are stacked on a substrate in order; and a texture layer that is disposed between the substrate and the first electrode layer, made of a transparent material in a visible light region, and has a continuous irregular configuration on a face that is in touch with the first electrode layer. | 07-07-2011 |
| 20110155232 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM - A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere. | 06-30-2011 |
| 20110151591 | PHOTOVOLTAIC CELL MANUFACTURING METHOD - The present invention provides a photovoltaic cell manufacturing method, the photovoltaic cell including: a photoelectric converter in which at least a first electrode layer, a semiconductor layer, and a second electrode layer are stacked in layers in this order being formed on a face of a substrate; and a connection portion of the first electrode layer and the second electrode layer, the photoelectric converter having a plurality of compartment elements which are electrically separated by a predetermined size using scribing lines at which the semiconductor layer and the second electrode layer are removed, adjacent compartment elements being electrically connected to each other, the photovoltaic cell manufacturing method comprising: a defect region specifying step in which a region at which the structural defect exists is specified in the photoelectric converter; and a repairing step in which at least three repair lines in which the semiconductor layer and the second electrode layer are removed are formed by irradiating the photoelectric converter with a laser, the region at which the structural defect exists is surrounded by at least three repair lines described above and one of the scribing lines, and the structural defect is removed or separated off, wherein one of at least three repair lines described above are formed at a region between the structural defect and the connection portion and at a region α including a contact portion of the semiconductor layer and the substrate in the photoelectric converter. | 06-23-2011 |
| 20110151237 | SURFACE-TREATED CERAMIC MEMBER, METHOD FOR PRODUCING THE SAME AND VACUUM PROCESSING APPARATUS - Disclosed is a surface-treated ceramic member which has a coating film-formed surface comprising a ceramic sintered body with a porosity of 1% or less and a sol-gel coating film of a silicon alkoxide compound polymer formed on at least a part of a ceramic sintered body, wherein the coating film and the surface of the body are coexistent in the coating film-formed surface. Specifically the area of the sol-gel coating film accounts for 5 to 80% of the total area of the coating film-formed surface. The surface-treated ceramic member has excellent corrosion resistance and is free from scattering of particles. | 06-23-2011 |
| 20110149000 | INKJET PRINTHEAD MODULE WITH ADJUSTABLE ALIGNMENT - A microdeposition system includes a stage, a printhead carriage, and a controller. The stage holds a substrate. The printhead carriage includes N printhead modules, where N is an integer greater than one. Each of the N printhead modules includes a printhead and an alignment mechanism. The printhead includes a plurality of nozzles that deposit droplets of fluid manufacturing material onto the substrate while relative movement between the substrate and the printhead is along a first axis. The alignment mechanism adjusts the printhead with respect to the printhead module. The controller controls the alignment mechanisms of the N printhead modules to set effective nozzle spacing for the pluralities of nozzles to a uniform value. The effective nozzle spacing is defined as spacing between adjacent ones of the plurality of nozzles as projected onto a second axis perpendicular to the first axis. | 06-23-2011 |
| 20110148985 | PARALLEL MOTION SYSTEM FOR INDUSTRIAL PRINTING - A microdeposition system includes a printhead carriage that moves along a first axis; a stage that holds a substrate; a rail located above the printhead carriage and extending along a third axis parallel to the first axis; and an accessory carriage that travels along the rail to remain above the printhead carriage. The printhead carriage includes a plurality of nozzles that deposit droplets of fluid material onto the substrate. | 06-23-2011 |
| 20110146574 | INKJET ULTRASONIC CLEANING STATION - A microdeposition system includes a printhead carriage that includes N rows of nozzles and that moves along a first axis; a stage that holds a substrate; and a maintenance station located at a position along the first axis that is past an edge of the substrate. The N rows of nozzles selectively deposit droplets of fluid manufacturing material onto the substrate. The maintenance station includes a capping station and an ultrasonic cleaning station located in a middle of the capping station. N is an integer greater than one. | 06-23-2011 |
| 20110143033 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD - A vacuum processing apparatus has a degassing chamber and does not need a large-sized vacuum evacuation device. In the process of heating and degassing an object to be processed in the degassing chamber, transferring the object to be processed into a processing chamber through a buffer chamber; and performing vacuum processing, the degassing chamber is connected to an vacuum evacuation system having a low evacuation speed and degassing processing is performed in a vacuum atmosphere of 1 to 100 Pa (time | 06-16-2011 |
| 20110135559 | SILICON PURIFICATION METHOD - A silicon purification method includes: loading a base material that is a starting material made of metallic silicon into a graphite crucible, heating and melting all of the base material which is disposed in an acidic inert gas atmosphere, maintaining the molten base material in the graphite crucible, and thereby oxidatively purifying the base material; loading the oxidatively-purified base material into a water-cooled crucible, gradually solidifying the base material after the base material disposed in a high vacuum atmosphere is fully molten, and thereby removing an unsolidified portion; and fully melting the base material which is disposed in a high vacuum atmosphere and in which the unsolidified portion is removed, and maintaining the base material in the water-cooled crucible. | 06-09-2011 |
| 20110135187 | PHOTOVOLTAIC CELL MANUFACTURING METHOD AND PHOTOVOLTAIC CELL MANUFACTURING APPARATUS - A photovoltaic cell manufacturing method includes: detecting a structural defect existing in compartment elements; obtaining an image by capturing a region including the structural defect and the scribe line with a predetermined definition; specifying first number of pixels on the image, the first number of pixels corresponding to a distance between the scribe lines adjacent to each other or corresponding to a width of the scribe line; referring to an actual value indicating the distance between the scribe lines adjacent to each other or indicating the width of the scribe line, the distance being preliminarily stored, and the width of the scribe line being preliminarily stored; calculating an actual size of one pixel on the image by comparing the first number of pixels with the actual value; specifying second number of pixels on the image, the second number of pixels corresponding to the distance between the structural defect and the scribe line; comparing the second number of pixels with the actual size of one pixel, thereby calculating defect position information; and electrically separating the structural defect by irradiation with the laser light based on the defect position information. | 06-09-2011 |
| 20110132142 | SILICON PURIFICATION METHOD - A silicon purification method includes a solidification purification step in which metal impurities are removed by irradiating a base material made of metallic silicon with an electron beam. The solidification purification step sequentially includes: preparing the base material to be purified at one time, loading a part of the base material into a water-cooled crucible, irradiating, with the electron beam, the entire area of the part of the loaded base material that is disposed under a high vacuum atmosphere, and thereby fully melting the part of the base material; gradually solidifying the molten part of the base material from a molten metal bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a first predetermined ratio of the total of the base material; further loading the remnant of the base material into the water-cooled crucible, and fully melting the remnant of the base material by irradiating the entire area of the remnant of the base material with the electron beam; gradually solidifying the molten metal portion from a bottom thereof toward a molten metal surface thereof by gradually weakening an output of the electron beam so that the solidification proceeds until the solidifying portion occupies a second predetermined ratio of the total of the molten metal portion; and removing an unsolidified molten metal portion. | 06-09-2011 |
| 20110126902 | APPARATUS AND METHOD FOR MANUFACTURING THIN FILM SOLAR CELL, AND THIN FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell that increase homogeneity in film characteristics. In a process of conveying a substrate from one roll to another roll, a power generation layer, which is a laminated body of a plurality of semiconductor layers, is formed in a plurality of film formation compartments partitioned along a conveying direction between the roll pair. A plurality of flat application electrodes are laid out in the conveying direction facing toward the substrate in each film formation compartment. Each flat application electrode includes a power supply terminal supplied with high frequency power in a VHF band. When the wavelength of the high frequency power is represented by λ, the distance between an edge of the flat application electrode and the power supply terminal is set to be shorter than λ/4 in a direction orthogonal to the conveying direction. | 06-02-2011 |
| 20110126670 | METHOD FOR REFINING METAL - A method for refining a metal such that, after a base material derived from the metal is melted by being irradiated with an electron beam, the base material is refined by solidifying the base material which was melted, the method including: a step melting all of the base material by irradiating the electron beam over an entire surface of the base material loaded inside a water-cooled crucible placed inside a high vacuum atmosphere; a step gradually solidifying the base material which was melted from a molten metal bottom part of the base material which was melted toward a molten metal surface part at a side being irradiated by the electron beam by gradually weakening an output of the electron beam while maintaining a condition in which the base material which was melted is irradiated with the electron beam; and a step removing a molten metal part which is not solidified, after the base material which was melted is solidified to a certain percentage. | 06-02-2011 |
| 20110122526 | MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE - A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot. | 05-26-2011 |
| 20110120553 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell, includes a scribing step in which grooves electrically-separating a photoelectric converter into a plurality of compartment sections are formed after the photoelectric converter is formed on a substrate by stacking a first-electrode layer, a photoelectric conversion layer, and a second-electrode layer in this order; a first groove, a second groove, a third groove, and a fourth groove are formed in the scribing step; the method including an insulating-layer forming step in which an insulating layer is formed after the scribing step and a wiring layer forming step in which a wiring layer is formed; the wiring layer passes from the first-electrode layer that is exposed at a bottom face of the second groove, through the inside of the second groove and a surface of the insulating layer, to a surface of the second-electrode layer that is disposed so as to be lateral to the fourth groove opposite to the second groove; and the wiring layer electrically connects the plurality of compartment sections to each other. | 05-26-2011 |
| 20110120370 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber which stores a substrate; and an electrode unit which performs film formation using a CVD method on the substrate in the film forming chamber. The electrode unit has an anode and a cathode; and a side wall portion which holds the anode and the cathode and forms a part of a wall portion of the film forming chamber, and is attachable to and detachable from the film forming chamber. | 05-26-2011 |
| 20110117742 | PLASMA PROCESSING METHOD - [Object] To provide a plasma processing method capable of maintaining a uniform in-plane distribution from the start to the end of etching by optimizing etching conditions. | 05-19-2011 |
| 20110117289 | Deposition Apparatus and Deposition Method - [Object] To provide a deposition apparatus and a deposition method that are capable of reducing an evacuation time in an evacuation system having a large condensing load to improve productivity. | 05-19-2011 |
| 20110114161 | Thin-Film Solar Battery Module Manufacturing Method and Thin-Film Solar Battery Module - [Object] To provide a thin-film solar battery module manufacturing method and a thin-film solar battery module that are capable of securing dielectric breakdown voltage characteristics of high reliability. | 05-19-2011 |
| 20110113644 | FREEZE-DRYING APPARATUS AND FREEZE-DRYING METHOD - [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a collection rate of a raw material without a need for providing a member such as a baffle plate or the like. | 05-19-2011 |
| 20110113643 | FREEZE-DRYING APPARATUS - [Object] To provide a freeze-drying apparatus capable of achieving an increase of a processing capacity without causing a variation of a particle diameter. | 05-19-2011 |
| 20110108114 | SOLAR CELL AND METHOD OF MANUFACTURING SAME - This solar cell has: a light transmissive first electrode; a photoelectric conversion layer formed of silicon; a light transmissive buffer layer; and a second electrode formed of a light reflective alloy. The second electrode is formed of a silver alloy including silver (Ag) as a main component with at least one of tin (Sn) and gold (Au) contained therein. | 05-12-2011 |
| 20110108107 | Thin-Film Solar Battery Module and Method of Manufacturing the Same - [Object] To provide a thin-film solar battery module and a method of manufacturing the thin-film solar battery module that are capable of improving connection reliability of an external connection terminal and reducing connection resistance thereof. | 05-12-2011 |
| 20110107969 | APPARATUS FOR MANUFACTURING THIN-FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell of the present invention has a film forming chamber in which a substrate is arranged so that the film formation face of the substrate is substantially parallel to the direction of gravitational force and a film is formed on the film formation face by a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face the cathodes, respectively, at a separation distance therefrom; and a conveying part which supports the substrate and conveys the substrate to between the cathode and the anode facing the cathode. The separation distance is variable. | 05-12-2011 |
| 20110104890 | METHOD FOR FORMING CU ELECTRICAL INTERCONNECTION FILM - Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed. | 05-05-2011 |
| 20110100297 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; transfer rail that is laid at the film forming chamber and the loading-ejecting chamber; a carrier that holds the substrate and moves along the transfer rail; and a carrier transfer mechanism that transfers the carrier, wherein, the carrier transfer mechanism is provided in the loading-ejecting chamber to transfer the carrier between the film forming chamber and the loading-ejecting chamber. | 05-05-2011 |
| 20110100296 | FILM FORMATION APPARATUS - A film formation apparatus includes: a film forming chamber in which a desired film is formed on a substrate in a vacuum; a loading-ejecting chamber fixed to the film forming chamber with a first opening-closing section interposed therebetween, being capable of reducing a pressure inside the loading-ejecting chamber so as to form a vacuum atmosphere; a second opening-closing section provided at a face opposite to the face of the loading-ejecting chamber on which the first opening-closing section is provided; and a carrier holding the substrate so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, wherein the carrier or the substrate passes through the second opening-closing section, and is transported to the loading-ejecting chamber and is transported from the loading-ejecting chamber; a plurality of carriers is disposed in the loading-ejecting chamber in parallel to each other; the plurality of carriers is transported in parallel between the loading-ejecting chamber and the film forming chamber; and a film is simultaneously formed on a plurality of substrates that is held by the plurality of carriers in the film forming chamber. | 05-05-2011 |
| 20110094446 | THIN-FILM SOLAR CELL MANUFACTURING APPARATUS - A thin-film solar cell manufacturing apparatus, includes: a film formation space in which a substrate is disposed so that a film formation face of the substrate is substantially parallel to a direction of gravitational force, and in which a desired film is formed on the film formation face by a CVD method; a cathode unit including cathodes to which a voltage is applied, and two or more power feeding points, the cathodes being disposed at both sides of the cathode unit; and an anode distantly disposed so as to face the cathodes that are disposed at both sides of the cathode unit. | 04-28-2011 |
| 20110094445 | APPARATUS FOR MANUFACTURING THIN-FILM SOLAR CELL - An apparatus for manufacturing a thin film solar cell of the present invention includes a film forming chamber in which a film is formed on a film formation face of a substrate using a CVD method; an electrode unit including a cathode unit having cathodes to which voltages are to be applied arranged on both sides thereof, and a pair of anodes each of which is arranged to face a different one of the cathodes, at a separation distance therefrom; a mask for covering a peripheral edge portion of the substrate; and a discharge duct installed around the cathode unit. A film formation space is formed between the cathode unit and the substrate installed on the side of the anode, an evacuation passage is formed between the mask and the cathode unit, the discharge duct and the film formation space are connected together via the evacuation passage, and a film forming gas introduced into the film formation space is evacuated from the discharge duct through the evacuation passage. | 04-28-2011 |
| 20110092071 | METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL - Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film ( | 04-21-2011 |
| 20110091661 | APPARATUS FOR PRODUCING MULTILAYER SHEET AND METHOD OF PRODUCING THE MULTILAYER SHEET - An apparatus for producing a multilayer sheet including a resin film, a vapor-deposited metal film and a vapor-deposited polymer film at a low cost and with excellent productivity is provided which comprises: a vacuum chamber which is made to be in a vacuum state by exhaust means; a feeding roller; a take up roller; a first to third rollers, first metal vapor deposition means for forming a first vapor-deposited metal film on one surface of a resin film at a periphery of the first roller; vapor deposition polymerization means for forming a vapor-deposited polymer film on the first vapor-deposited metal film by vapor deposition polymerization at a periphery of the second roller; and second metal vapor deposition means for forming the second vapor-deposited metal film on the other surface of the resin film at a periphery of the third roller. | 04-21-2011 |
| 20110091650 | METHOD OF FORMING ORGANIC POLYMER THIN FILM AND AN APPARATUS FOR FORMING THE ORGANIC POLYMER THIN FILM - A technique for forming an organic polymer thin film on a surface of a substrate with high film formation efficiency and excellent reproducibility and stability is provided. When a vacuum deposition polymerization for forming an organic polymer thin film is performed on a surface of a substrate | 04-21-2011 |
| 20110089026 | TOUCH PANEL MANUFACTURING METHOD AND FILM FORMATION APPARATUS - A touch panel manufacturing method is a method for manufacturing a touch panel including a transparent substrate having a main surface on which a transparent-electroconductive film is formed. The transparent-electroconductive film is formed on the main surface of the transparent substrate by carrying out sputtering using a target made of a zinc oxide-based material in a reactive gas atmosphere containing two or three gases selected from a group consisting of hydrogen gas, oxygen gas, and water vapor. | 04-21-2011 |
| 20110069473 | Display device, apparatus for producing display device, and method for producing display device - A display device free from a deterioration in luminescence efficiency is provided. In the display device of the present invention, since an inorganic film is formed after concave parts in which luminescence portions are positioned are filled with a filling film, no crack is formed in the inorganic film. Since the inorganic film is made of a material having high gas tightness and heat conductivity (such as, diamond-like carbon or AlN), water and oxygen will hardly penetrate the luminescence portions, and heat of the luminescence portions will be conducted to the inorganic film, so that the luminescence portions do not reach high temperatures. Further, since a gap between first and second panels is filled with a resin film, the atmosphere does not enter from the outside. Because the luminescence portions are free from damage from water, oxygen and heat, the display device of the present invention has a prolonged life. | 03-24-2011 |
| 20110068402 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film | 03-24-2011 |
| 20110068338 | METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit. | 03-24-2011 |
| 20110064198 | ANALYTICAL METHOD - The object of the present invention is to analyze a functional organic compound with high accuracy. In the present invention, cluster ions are accelerated so that the kinetic energy of cluster ions is less than 3.1 eV per one atom that makes up the cluster ion and the cluster ions enter a sample. Since the functional organic compound in the sample is etched without the breakdown of the chemical structure, the functional organic compound, which has not been chemically denatured, is exposed on the surface of the sample. By alternately performing the etching and the surface analysis of the sample, or performing the surface analysis of the sample while performing the etching, the sample can be accurately analyzed in the depth direction. | 03-17-2011 |
| 20110052832 | FILM FORMING METHOD AND FILM FORMING APPARATUS - An object of the present invention is to provide a reflection film formation technology which achieves the simplification of an apparatus structure and the cost reduction thereof. A film forming method of the present invention includes a reflection film formation step (P | 03-03-2011 |
| 20110048926 | MAGNETRON SPUTTERING APPARATUS AND MAGNETRON SPUTTERING METHOD - The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate. | 03-03-2011 |
| 20110048563 | SWITCH VALVE - A switch valve having a long span of life is provided. The switch valve | 03-03-2011 |
| 20110048319 | SUBSTRATE TRANSFER PROCESSING APPARATUS - A substrate transfer processing apparatus capable of processing a substrate at high speed is provided. A mounting table on which a substrate is mounted includes a plate-shaped main body and a recessed part formed in a rear surface of the plate-shaped main body. Since the mounting table is lightweight as compared to the mounting table before the recessed part is formed therein, the load on a motor is small and the running cost is low even when the mounting table is moved at high speed. Because the plate-shaped main body is made of granite, the mounting surface can be made flat and smooth by polishing. Since the mounting surface is flat and smooth, the accuracy in positioning the substrate is high. | 03-03-2011 |
| 20110042876 | STAGE - Provided is a substrate stage which can transfer a substrate at a high speed. In the substrate stage of the present invention, auxiliary mounting tables are attached to a main mounting table, and lower rails are arranged over on the main mounting table and above the auxiliary mounting tables. When both ends of the lower rails are bent upwardly by a vertically adjusting unit in order to prevent the both ends of the lower rails to be bent downwardly, the lower rails are made straight. Since the lower rail is not divided, the linearity is ensured and the moving plate does not stutter so that transfer of the substrate at high speed can be performed. | 02-24-2011 |
| 20110042208 | FILM FORMING SOURCE, VAPOR DEPOSITION APPARATUS, AND APPARATUS FOR MANUFACTURING AN ORGANIC EL ELEMENT - A film forming source capable of forming a thin film having a good film quality is provided. Since each switch valve becomes a closed state when a blocking member closely contacts a melted metal, a gas blocking performance in the closed state is high, and no dust is generated. When vapors of different vapor deposition materials are generated in a plurality of vapor generating units, the vapor generated in a selected vapor generating unit is not mixed with the vapor from another vapor deposition apparatus. Therefore, a vapor deposition material not to be film-formed is not mixed in, and contamination due to dust generation does not occur. Consequently, a thin film having good film quality can be obtained. | 02-24-2011 |
| 20110041763 | WATER-REACTIVE AL COMPOSITE MATERIAL, WATER-REACTIVE AL FILM, PROCESS FOR THE PRODUCTION OF THE AL FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a water-reactive Al composite material which comprises 4NAI or 5NAI, as an Al raw material, containing, on the basis of the amount of the Al raw material, added Bi in an amount ranging from 0.8 to 1.4% by mass and Si, including the Si as an impurity of the Al raw material, in a total amount ranging from 0.25 to 0.7% by mass; a thermally sprayed Al film produced using this Al composite material; a method for the production of this Al film; and a constituent member for a film-forming chamber, which is provided, on the surface, with the thermally sprayed Al film. | 02-24-2011 |
| 20110041762 | METHOD FOR THE PRODUCTION OF WATER-REACTIVE AL FILM AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a method for the production of a water-reactive Al film which comprises the steps of melting a material which comprises 4NAl or 5NAl as an Al raw material and added In in an amount ranging from 2 to 5% by mass on the basis of the mass of the Al raw material in such a manner that the composition of the material becomes uniform; thermally spraying the resulting molten material on the surface of a base material according to the electric arc spraying technique, while using Ar gas as a spraying gas; and solidifying the sprayed molten material through quenching to thus form an Al film in which In is uniformly dispersed in Al crystalline grains; and a constituent member for a film-forming chamber, which is provided, on the surface, with this water-reactive Al film. | 02-24-2011 |
| 20110041761 | WATER-REACTIVE AL COMPOSITE MATERIAL, WATER-REACTIVE AL FILM, PROCESS FOR THE PRODUCTION OF THE AL FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Provided herein are a water-reactive Al composite material comprising an Al raw material selected from the group consisting of 2NAl to 5NAl each containing Cu as an impurity of Al in an amount of not higher than 40 ppm, and at least one metal selected from the group consisting of In and Bi, in amounts ranging from 2 to 5% by mass and 0.7 to 1.4% by mass, respectively, on the basis of the mass of Al; a water-reactive Al film produced using this composite material; a method for the production of this Al film; and a constituent member for a film-forming chamber, which is provided, on the surface, this water-reactive Al film. | 02-24-2011 |
| 20110041760 | METHOD FOR THE PRODUCTION OF WATER-REACTIVE AL FILM AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Herein disclosed are a method for the production of a water-reactive Al film comprising the steps of melting a material which contains 4NAl or 5NAl as an Al raw material and added In in an amount ranging from 2 to 5% by mass on the basis of the mass of the Al raw material in such a manner that the composition of the material becomes uniform; thermally spraying the resulting molten material on the surface of a base material according to the flame spraying technique; and solidifying the sprayed molten material through quenching to thus form an Al film in which In is uniformly dispersed in Al crystalline grains; and a constituent member for a film-forming chamber, which is provided, on the surface, with the water-reactive Al film. | 02-24-2011 |
| 20110041759 | WATER-REACTIVE AL COMPOSITE MATERIAL, WATER-REACTIVE AL FILM, PROCESS FOR THE PRODUCTION OF THE AL FILM, AND CONSTITUENT MEMBER FOR FILM-FORMING CHAMBER - Herein disclosed are a water-reactive Al composite material which comprises 4NAI or 5NAI containing added In in an amount ranging from 2 to 5% by mass on the basis of the amount of Al; a water-reactive Al film prepared using this material; a method for the production of such an Al film; and a constituent member for a film-forming chamber, which is provided with this water-reactive Al film on the surface thereof. | 02-24-2011 |
| 20110033932 | SUBSTRATE FOR CELL ADHESION OR CULTURE AND METHOD FOR PRODUCING THE SAME - A substrate for cell adhesion or culture of the invention comprises: a base material; a cell adhesion layer arranged to cover a predetermined region on this base material; and a non-cell adhesion layer arranged on the base material to cover a region other than the predetermined region. An exposed surface of the cell adhesion layer is a cell adhesion surface. The non-cell adhesion layer has a light transmission characteristic, and an exposed surface of the non-cell adhesion layer is a non-cell adhesion surface. | 02-10-2011 |
| 20110030780 | SOLAR CELL - A solar cell includes: a substrate having optical transparency; a photoelectric converter provided on the substrate, including a top-face electrode having optical transparency, a photoelectric conversion layer, and a back-face electrode having light reflectivity; and a low-refractive conductive layer whose refractive index is less than or equal to 2.0, the low-refractive conductive layer being made of a conductive material having optical transparency, being adjacent to the photoelectric conversion layer, and being disposed on a side of the photoelectric conversion layer opposite to the substrate. | 02-10-2011 |
| 20110020976 | SOLAR CELL, AND METHOD AND APPARATUS FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell, includes: forming, on a silicon substrate whose conductivity type is p-type or n-type, a silicon layer including a dopant whose conductivity type is different from that of the silicon substrate; and diffusing the dopant included in the silicon layer into the silicon substrate by heat-treating the silicon layer. | 01-27-2011 |
| 20110020963 | METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell, includes: forming a photoelectric converter which includes a plurality of compartment elements, and in which the compartment elements adjacent to each other are electrically connected; specifying a compartment element having a structural defect in the photoelectric converter; restricting a portion in which the structural defect exists in the compartment element by specifying a defect portion based on a resistance distribution that is obtained by measuring resistances of portions between the compartment elements adjacent to each other; and removing the structural defect by supplying a bias voltage to the portion in which the structural defect exists. | 01-27-2011 |
| 20110014398 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film formation device ( | 01-20-2011 |
| 20110005571 | METHOD AND APPARATUS FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL - A method for manufacturing a solar cell, includes: forming a photoelectric converter which includes a plurality of compartment elements, and in which the compartment elements adjacent to each other are electrically connected; specifying a first compartment element having a structural defect in the photoelectric converter; restricting a portion in which the structural defect exists in the first compartment element by specifying a defect portion based on a resistance distribution that is obtained by measuring resistances of portions between the compartment elements adjacent to each other; and removing or separating off the structural defect by irradiating the first compartment element and a second compartment element with a laser beam so as to intersect a boundary section between the first compartment element including the portion in which the structural defect exists and the second compartment element adjacent to the first compartment element. | 01-13-2011 |
| 20100330363 | RESIN SUBSTRATE - A resin substrate of the present invention has a resin layer and a surface layer formed on a surface of the resin layer, wherein the surface layer is a layer comprising silicon nitride as a main component and deposited by the chemical vapor deposition method, and at the interface between the resin layer and the surface layer, at the interface between the resin layer and the surface layer, an interfacial region over which a percentage changes from 80% to 20% has a thickness of not more than 25 nm, wherein the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%. The surface layer has an average surface roughness (Ra) of not more than 1 nm. The resin substrate has properties of water vapor barrier and surface flatness. | 12-30-2010 |
| 20100317189 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S | 12-16-2010 |
| 20100314599 | CHALCOGENIDE FILM AND METHOD OF MANUFACTURING SAME - A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point. | 12-16-2010 |
| 20100313811 | EVAPORATION SOURCE AND FILM-FORMING DEVICE - A vaporization source ( | 12-16-2010 |
| 20100310828 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSED BY THIS METHOD - [Object]To provide a substrate processing method capable of forming a concavo-convex structure on a substrate surface while reducing the number of processes. | 12-09-2010 |
| 20100308012 | MAGNETIC DEVICE MANUFACTURING METHOD - A method for manufacturing a magnetic device that obtains sufficient processing accuracy without increasing mask removal steps. A first mask layer is formed above a magnetic layer using one selected from the group consisting of Ti, Ta, W, and an oxide or a nitride thereof. A second mask layer is formed on the first mask layer using Ru or Cr. A resist pattern is formed on the second mask layer. A second mask pattern is formed by performing reactive ion etching with reactive gas containing oxygen on the second mask layer using the resist pattern. A first mask pattern is formed by performing reactive ion etching with reactive gas containing halogen gas on the first mask layer using the second mask pattern. A magnetic pattern is formed by performing reactive ion etching with reactive gas containing oxygen on the magnetic layer using the first mask pattern. | 12-09-2010 |
| 20100307414 | Take-Up Type Vacuum Deposition Apparatus - [Object] To provide a take-up type vacuum deposition apparatus capable of preventing a thermal deformation of a base material due to charged particles leaked from a neutralization unit without an increase in size of the apparatus. | 12-09-2010 |
| 20100301339 | METHOD OF PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR - [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. | 12-02-2010 |
| 20100295896 | PRINTABLE SUBSTRATE AND NOZZLE ALIGNMENT SYSTEM - According to the present disclosure, a printer apparatus may include a chuck configured to support a substrate thereon, a rail spaced apart from the chuck, a printhead carriage frame coupled to the rail and containing a printhead carriage housing at least one printhead therein, a first camera assembly configured to capture image data of the printhead and provide the image data to a computer, and a computer receiving the image data from the first camera assembly and configured to determine a deviation between a desired position of the printhead and an actual position of the printhead. | 11-25-2010 |
| 20100295811 | TOUCH PANEL AND METHOD FOR MANUFACTURING TOUCH PANEL - A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken. | 11-25-2010 |
| 20100294650 | PROCESS FOR PRODUCING LIQUID CRYSTAL DISPLAY DEVICE - A process for producing a liquid crystal display device that includes at least a pair of substrates holding a liquid crystal layer therebetween and a pixel electrode superimposed on the liquid crystal layer side of the pair of substrates, the pixel electrode on at least one of the pair of substrates being formed of a transparent electroconductive film made of zinc oxide as a fundamental constituent material, the process includes: a step of forming a zinc oxide transparent electroconductive film on the substrate by sputtering, using a target of a zinc oxide series material to form the pixel electrode, wherein, in the step of forming the pixel electrode, sputtering is performed in an atmosphere containing two or three materials selected from the group consisting of hydrogen gas, oxygen gas, and water vapor. | 11-25-2010 |
| 20100294649 | SPUTTERING FILM FORMING METHOD AND SPUTTERING FILM FORMING APPARATUS - In a sputtering film forming method of the invention, a magnetron cathode with a magnet arranged on a back surface side of a target is used, a substrate is transported in a first direction on a front surface side of the target, and the magnet is moved in reciprocating motion in the first direction and a second direction which is opposite to the first direction, thereby performing sputtering film formation on the substrate. Sputtering film formation is performed where a speed of the movement of the magnet in the first direction and a speed of the movement of the magnet in the second direction are different from each other. | 11-25-2010 |
| 20100288625 | FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus that deposits a compound thin film on a front surface of a substrate held in a sputter deposition chamber by reactive sputtering, in which the sputter deposition chamber includes a first film quality adjustment gas introduction device that introduces a film quality adjustment gas to a rear surface of the substrate, the film quality adjustment gas adjusting a film quality of a compound thin film deposited on the front surface of the substrate. | 11-18-2010 |
| 20100276858 | MOVABLE TABLE AND PROCESSING STAGE - A movable table, which has a substrate to be processed mounted thereon and moves, includes: a main plate formed of a metallic material; and a plurality of sub plates which is disposed on the main plate and is formed of a material with a hardness higher than the metallic material, and the top surfaces of the plurality of sub plates are mounting surfaces of the substrate to be processed. | 11-04-2010 |
| 20100270143 | SUBSTRATE STAGE, SPUTTERING APPARATUS PROVIDED WITH SAME, AND FILM FORMING METHOD - A substrate stage that is arranged in a vacuum chamber and that has a substrate mounting surface on which a substrate is mounted, including a first magnetic field applying unit that applies a magnetic field to the substrate, in which the internal magnetization direction of the first magnetic field applying unit and the thickness direction of the substrate match. | 10-28-2010 |
| 20100269898 | METHOD FOR MANUFACTURING PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL - A method for manufacturing a photovoltaic cell that is provided with an upper electrode that is arranged on the light incoming side and functions as a power extraction electrode, the method including the step of: forming the upper electrode on a substrate by sputtering using a target that contains a zinc oxide-based material, wherein in the step of forming the upper electrode, the sputtering is performed in an atmosphere that contains two or three selected from a group consisting of hydrogen gas, oxygen gas, and water vapor. | 10-28-2010 |
| 20100269755 | VAPOR DEPOSITION SOURCE AND APPARATUS FOR PRODUCING ORGANIC EL ELEMENT - Heat controllability of an evaporating vessel of a vapor deposition source is improved. The vapor deposition source of the present invention includes the evaporating vessel where an organic material is arranged; and a heating wire is wound around an outer periphery of the vapor deposition source. The portion of the organic material, which contacts a side wall of the evaporating vessel, is arranged below a lower end of the heating wire, and a substrate is attached to a substrate holder. When activating an electric power supply to make the heating wire generate heat for heating the evaporating vessel, a vapor of the organic material is discharged into a vacuum chamber through holes directed upward to attach to the substrate and form a thin film. Since the heating wire is arranged up to the upper end of the evaporating vessel, its opening can be heated to the evaporation temperature or higher; and since the evaporating vessel is made of any kind of metallic material of copper, copper-berylium alloy, Ti or Ta and its side wall and bottom wall are formed from 0.3 mm or more to 0.7 mm or less thick, the heat capacity is small and the controllability is high. | 10-28-2010 |
| 20100266433 | MULTI-STAGE DRY PUMP - A multi-stage dry pump includes: a plurality of pump chambers each including a cylinder and a rotor housed in the cylinder; a first rotor shaft that is a rotation shaft of the rotors; a fixed bearing that rotatably supports the first rotor shaft and restricts a movement thereof along an axis direction of the first rotor shaft; and a free bearing that rotatably supports the first rotor shaft and permits a movement thereof along the axis direction of the first rotor shaft; wherein: the plurality of pump chambers is disposed between the fixed bearing and the free bearing; and a first pump chamber of the plurality of pump chambers which has a lower pressure and on the aspiration side is placed in proximity to the fixed bearing. | 10-21-2010 |
| 20100258433 | FILM FORMING METHOD AND FILM FORMING APPARATUS FOR TRANSPARENT ELECTRICALLY CONDUCTIVE FILM - A film forming method for a transparent electrically conductive film that forms a zinc oxide-based transparent electrically conductive film on a substrate by sputtering using a target containing a zinc oxide-based material, performing the sputtering in a reactive gas atmosphere that contains two types or three types selected from among a group consisting of hydrogen gas, oxygen gas and water vapor. | 10-14-2010 |
| 20100258430 | SPUTTERING APPARATUS AND FILM FORMING METHOD - A sputtering apparatus forming a film on a surface of a substrate, including: a table on which the substrate is placed; a plurality of targets disposed so that center axes thereof incline with respect to a normal line of the substrate placed on the table; and a plurality of magnetic field applying devices disposed between the targets and the substrate so as to surround the substrate, wherein the magnetic field applying devices generates a magnetic field, which has a horizontal magnetic field component parallel to the surface of the substrate, above the peripheral edge of the substrate. | 10-14-2010 |
| 20100251960 | CHAMBER AND FILM FORMING APPARATUS - The present invention provides a chamber | 10-07-2010 |
| 20100236918 | FILM FORMING APPARATUS AND FILM FORMING METHOD - A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target. | 09-23-2010 |
| 20100234969 | PROCESS MANAGEMENT SYSTEM - It is possible to provide a process management system which can rapidly analyze information obtained by a plurality of devices. The system includes: first acquisition means (a control monitor unit ( | 09-16-2010 |
| 20100232921 | SUBSTRATE TRANSFER APPARATUS - Provided is a substrate transfer apparatus which can perform stable and highly accurate transfer without making a configuration complicated. A substrate transfer apparatus according to the present invention includes a multijoint arm whose one end is arranged on a base and the other end is connected to a hand for supporting a substrate, a linear guide for guiding a rectilinear movement of the hand, and a belt driving mechanism for moving the hand along a guide rail of the linear guide. The substrate transfer apparatus having such a configuration supports a load acting on the hand by the multijoint arm and ensures rectilinear transfer performance of the hand by the linear guide. Therefore, since a special mechanism for passing the substrate through a dead point is not required, the configuration is prevented from becoming complicated. Furthermore, since the load does not directly act on the linear guide, high transfer accuracy can be obtained. | 09-16-2010 |
| 20100230280 | Self-ionized sputtering apparatus - There is provided a low-cost self-sputtering apparatus which is so arranged that, even when an arc discharge occurs for some reasons or other, failure in electric discharge can be prevented. The self-sputtering apparatus has a vacuum chamber in which a substrate to be processed is disposed; a target to be disposed opposite to the substrate; a sputtering power source for charging the target with a negative DC current; an anode shield which is disposed in a manner to enclose a space in front of the target and which is charged with a positive electric potential; and a gas introduction means for introducing a predetermined sputtering gas into the vacuum chamber. The apparatus further has an LC resonance circuit in parallel with an output circuit from the DC power source to the target. | 09-16-2010 |
| 20100224341 | SECONDARY COOLING APPARATUS AND CASTING APPARATUS - A secondary cooling apparatus capable of gradually cooling cast thin pieces and a cast apparatus that uses it are provided. A comb tooth-shaped device is arranged inside a vessel of the secondary cooling apparatus; the cast thin pieces are piled on the comb tooth-shaped device; and crushed small pieces are placed thereon. After the cast thin pieces and the crushed small pieces are gradually cooled, the cast thin pieces are crushed by a pressing device. The crushed small pieces are rapidly cooled by being in contact with a surface of a bottom wall and side faces of cooling teeth. Nd-rich phases or R-rich phases can be annealed by the gradual cooling, and after the crushed small pieces are rapidly cooled to its oxidation temperature or below, the crushed small pieces can be taken out to the air atmosphere. | 09-09-2010 |
| 20100221433 | PROCESS FOR MANUFACTURING HYDROPHOBIZED MICROPOROUS FILM - A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film | 09-02-2010 |
| 20100220274 | POROUS SILICA PRECURSOR COMPOSITION AND METHOD FOR PREPARING THE PRECURSOR COMPOSITION, POROUS SILICA FILM AND METHOD FOR PREPARING THE POROUS SILICA FILM, SEMICONDUCTOR ELEMENT, APPARATUS FOR DISPLAYING AN IMAGE, AS WELL AS LIQUID CRYSTAL DISPLAY - A porous silica precursor composition is herein provided and the precursor composition comprises an organic silane represented by the following chemical formula 1: | 09-02-2010 |
| 20100213363 | MASS SPECTROMETRY UNIT - A mass spectrometry unit of the present invention includes a mass spectrometry portion that detects ion current values of a gas to be measured according to mass-to-charge ratio, to thereby measure partial pressures of the gas to be measured. The mass spectrometry unit further includes: a control portion for preliminary storing a record of a mass-to-charge ratio of a specific gas that decreases a function of a specific portion of the mass spectrometry unit, in which if an ion current value with the mass-to-charge ratio of the specific gas detected by the mass spectrometry portion is not less than a predetermined value, the control portion outputs a warning signal denoting a functional decrease in the specific portion. | 08-26-2010 |
| 20100213170 | ETCHING METHOD AND ETCHING APPARATUS - An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more | 08-26-2010 |
| 20100211210 | Position correcting apparatus, vacuum processing equipment and position correcting method - A technology to resolve positional deviations without using a transport robot. An object to be transported placed on a holding stand is rotated, so as to make an error angle α to be zero; and thereafter, a temporarily placing portion is made to move obliquely to move for an error distance in a horizontal component, thereby locating the center of the object to be transported on the central axis line of the holding stand; and the object to be transported is placed on holding stand. In a case where an orientation of a notch is definite, the holding stand is further rotated by a desired amount. Without using the transport robot, it is possible to resolve an error angle and an error distance. | 08-19-2010 |
| 20100209721 | METHOD FOR LAMINATION OF DECORATIVE METAL FILM ON RESIN BASE MATERIAL, AND RESIN BASE MATERIAL HAVING DECORATIVE METAL FILM THEREON - The present invention provides a method for laminating a decorative metal film on a resin base material with excellent adhesion to the resin base material and with a sufficient gloss imparted to the decorative metal film, and a resin base material having a decorative metal film. The method laminates a polymeric planarizing film on the resin base material using a vapor deposition polymerization method, and then laminates the decorative metal film on the planarizing film. | 08-19-2010 |
| 20100209609 | VAPOR EMISSION DEVICE, ORGANIC THIN FILM VAPOR DEPOSITION APPARATUS, AND METHOD FOR DEPOSITING ORGANIC THIN FILM - A technology for organic material vapor deposition is provided, which can enhance efficiency in the evaporation material, prevent time-degradation of the evaporation material, and surely prevent any mask deformation by heat during vapor deposition. An organic material evaporation source including: a shower-plate shape emission part having a plurality of emission orifices arranged within a plane thereof; a feeding pipe provided inside the emission part for feeding the vapor of introduced organic evaporation material into the emission part via the blowout orifices by emitting the vapor toward the bottom part of the emission part; and a cooling means provided at least in a position on the emission orifice side of the emission part. The cooling means is formed by, for example, covering the entire emission part, and has vapor passage holes for allowing the organic evaporation material vapor to pass in positions corresponding to the emission orifice of the emission part. | 08-19-2010 |
| 20100206719 | METHOD FOR MANUFACTURING SOLAR CELL - A method for manufacturing a solar cell provided with an upper electrode which functions as an electrode for extracting electric power at a light incidence side of the solar cell and includes a ZnO-based transparent conductive film, the method comprising: forming the upper electrode by sputtering a target on which a formation material of the transparent conductive film is provided while applying sputtering voltage of 340V or less and generating a horizontal magnetic field on a target surface. | 08-19-2010 |
| 20100203737 | ETCHING METHOD AND SYSTEM - An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence. | 08-12-2010 |
| 20100200990 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED THEREWITH - A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. | 08-12-2010 |
| 20100193352 | METHOD FOR MANUFACTURING SOLAR CELL - The present invention relates to a method for manufacturing a solar cell provided with a buffer layer or an intermediate electrode. The buffer layer is disposed between a rear electrode and a photovoltaic cell. The rear electrode is disposed on the opposite side of a light incidence side and functions as an electrode for extracting electric power. The intermediate electrode is disposed between a plurality of photovoltaic cells. The intermediate electrode or the buffer layer comprises a ZnO-based transparent conductive film. The method comprises forming the intermediate electrode or the buffer layer by sputtering a target on which a formation material of the transparent conductive film is provided while applying sputtering voltage to generate a horizontal magnetic field on a surface of the target. The intermediate electrode or the buffer layer is formed through sputtering at a sputtering voltage of 340V or less. | 08-05-2010 |
| 20100193131 | ASHING DEVICE - An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind. | 08-05-2010 |
| 20100187197 | METHOD FOR MANUFACTURING A VERTICAL MAGNETIC RECORDING MEDIUM - A method for manufacturing a vertical magnetic recording medium that has: a substrate; a soft magnetic layer formed on the substrate; a magnetic recording layer formed directly on the soft magnetic layer or formed on the soft magnetic layer with an intermediate layer therebetween, and having an axis of easy magnetization perpendicular to a surface thereof, in which a plurality of grooves dividing the magnetic recording layer into a plurality of recording elements, the method including a step of forming the grooves by reactive ion etching using a gas containing at least halogen and oxygen, and using the hard mask layer as a mask. | 07-29-2010 |
| 20100187100 | METHOD FOR FORMING TRANSPARENT CONDUCTIVE FILM - A method for forming a transparent conductive film forms the transparent conductive film containing ZnO as a basic element on a substrate by a sputtering which is performed by applying a sputtering voltage to a target made of a material to form the transparent conductive film and generating a horizontal magnetic field over a surface of the target. The sputtering is performed by setting the sputtering voltage to 340 V or less. | 07-29-2010 |
| 20100187094 | THIN FILM FORMING APPARATUS, FILM THICKNESS MEASURING METHOD AND FILM THICKNESS SENSOR - A technology which is capable of an accurate measurement of the film thickness even if an exfoliation occurs is provided. A difference frequency Δf | 07-29-2010 |
| 20100180819 | FILM-FORMING APPARATUS - In a film-forming apparatus in which two or more gases are used, a uniform film is formed. In a film-forming apparatus provided with a film-forming chamber and a shower head, the shower head is provided with a material gas diffusion chamber and a reactive gas diffusion chamber. A gas passage which communicates the material gas diffusion chamber and a material gas introduction pipe is constituted into multi-stages of one stage or more. Each stage has a gas passage represented by 2n-1 (where n is the number of stages). The first-stage gas passage has connected to the center thereof the material gas introduction pipe. Each of second-stage and subsequent-stage gas passages has connected to the center thereof connection holes which are provided on both ends of the previous-stage gas passages so as to be in communication with the previous-stage gas passages. Each of the final-stage gas passages is connected to the material gas diffusion chamber by connection holes formed on both ends of each of the gas passages. | 07-22-2010 |
| 20100178424 | METHOD OF MANUFACTURING ORGANIC THIN FILM - A thin film of a uniform film thickness is formed even without increasing the film deposition rate. The temperature of an evaporation device disposed in an evaporation chamber is raised in advance, and an organic material is dropped from a supply unit onto an evaporation surface of the evaporation device; and when the organic material is evaporated, a heated carrier gas is introduced into the evaporation chamber, and is mixed in the evaporation chamber and is introduced into a discharger. While a molecular flow is formed in the discharger in a case that only the organic material vapor is introduced into the discharger, the pressure within the discharger is raised due to the carrier gas, so that a viscous flow is formed and the mixed gas is filled in the discharger and is uniformly discharged. The organic material may be supplied by a small amount and the film deposition rate may not become too high. | 07-15-2010 |
| 20100178136 | SUBSTRATE TRANSFER ROBOT AND VACUUM PROCESSING APPARATUS - Substrates are delivered in a short time among various processing chambers having various mounting positions. When first to fourth drive shafts rotate in a state such that an A-side rotary member and a B-side rotary member are stationary, first to fourth mounting portions linearly move on extension lines on respective ones of the sides thereof. When the first drive shaft and the A-side rotary member, the second drive shaft and the B-side rotary member, the third drive shaft and the A-side rotary member, and the fourth drive shaft and the B-side rotary member rotate by the same angle in the same direction, the first to fourth mounting portions are rotationally moved. When the linear motion is combined with the rotational motion, the first to fourth mounting portions can be moved to desired positions. | 07-15-2010 |
| 20100177153 | STAGE APPARATUS - A stage apparatus that achieves a high accuracy in assembling and enables easy work at a real installation site. In a stage apparatus of the present invention, sub rails are arranged on respective sub base plates, which are connected respectively with the first and second main rails on a main base plate to extend the first and second main rails. Accordingly, when the sub base plates are fixed to the main base plate | 07-15-2010 |
| 20100176391 | ORGANIC EL ELEMENT AND A METHOD FOR MANUFACTURING THE ORGANIC EL ELEMENT - A dense cathode electrode layer having a step coverage is to be formed on an electron injection layer. The electron injection layer in which fine particles of an electron injection material is dispersed in an organic thin film having an electron transport property is formed by vapor co-depositing the electron transport material and the electron injection material; and a cathode electrode layer made of an alloy layer of MgAg is formed by a sputtering method. Since lower portions of the fine particles of the electron injection material dispersed in the surface of the organic thin film are buried in the organic thin film, the electron injection particles are not peeled off even if sputtering particles collide with the electron injection particles, and the upper portions are in contact with the cathode electrode layer formed by sputtering particles. | 07-15-2010 |
| 20100175990 | DUMMY SUBSTRATE, AND START METHOD OF, RETENTION/MODIFICATION METHOD OF DEPOSITION CONDITION, AND STOP METHOD OF DEPOSITION APPARATUS USING SAME - This dummy substrate is for use in an inline reactive sputtering apparatus. The main unit thereof is made of a rectangular-plate-like frame structure in which an opening portion in a rectangular shape is formed in a metal plate in a similar shape. It is configured such that a contact portion of a carrier with the main unit is covered with the main unit. As a result, even while the sputtering apparatus is in operation, there is no possibility of the occurrence of undesirable situations such as glass cracking, making it possible to significantly increase the number of times the dummy substrate is used. Furthermore, the dummy substrate continues to cover the contact portion with the carrier. Thereby, it is possible to prevent deposition of a substance left in a sputter deposition chamber, especially a compound thin film, on the contact portion of the carrier with the substrate. Therefore, it is possible to prevent undesirable situations such as an abnormal discharge due to the deposition of the compound thin film. As a result of these, it is possible to start (activate) an apparatus that deposits a compound thin film by the sputtering method, retain and modify a deposition condition in the apparatus, and stop (deactivate) the apparatus in a shorter time, and more efficiently and at a lower cost than before. | 07-15-2010 |
| 20100175490 | ROUGH AND FINE MOVEMENT DEVICE, AND LIQUID SUPPLY DEVICE INCORPORATING THE SAME - A rough and fine movement device capable of moving a mobile body with high accuracy, and a liquid supply device incorporating such a device. First and second mobile bodies are movable along guide members with a connection member connecting the mobile bodies in a relatively movable manner. A first drive mechanism roughly moves the first mobile body by a first stroke. A second drive mechanism between the first and the second mobile bodies, finely moves the second mobile body relative to the first mobile body by a second stroke. The second drive mechanism on one of the first and second mobile bodies and includes an actuator having a contactor with a first contact surface. The other of the bodies includes a second contact surface which contacts the first contact surface. At least one of the first contact surface or the second contact surface is spherical. | 07-15-2010 |
| 20100170444 | ORGANIC MATERIAL VAPOR GENERATOR, FILM FORMING SOURCE, AND FILM FORMING APPARATUS - A thin film having a uniform film thickness is formed without increasing the film deposition rate. When an organic material is supplied from a supply unit to an evaporation chamber and evaporated on an evaporation surface of an evaporation device, a heating filter provided in advance is heated, and a carrier gas is made to flow therein to be heated and is introduced into the evaporation chamber. Organic material vapor thus produced and the carrier gas are mixed; and the mixed gas is introduced into a discharger. Whereas a molecular flow is formed in the discharger in a case that only the organic material vapor is introduced into the discharger, the pressure inside the discharger is raised by the carrier gas so that a viscous flow is formed. Thus, the mixed gas is filled in the discharger and uniformly discharged. It is preferable that the organic material be supplied by a small amount so as not to make the film deposition rate too high. | 07-08-2010 |
| 20100170439 | VAPOR DEPOSITION APPARATUS - Contamination of organic EL device is prevented. After a colored layer of the first color is formed, a positioning device moves relatively a substrate and a mask inside the same vacuum chamber, and an opening of the mask is moved to a position above the region where a colored layer of the next color is to be formed. As a result, since the colored layers of two or more colors can be formed without changing the mask and the moving distance of the substrate during deposition becomes short, dust is not generated and contamination of the organic EL device is prevented. | 07-08-2010 |
| 20100167618 | METHOD AND APPARATUS FOR MANUFACTURING PLASMA DISPLAY PANEL - A method for manufacturing a plasma display panel in which an electrical discharge gas is introduced into a space between a first substrate and a second substrate which are sealed together, the method including: a first deaeration step of releasing impurity gases from a protective film by heating the first substrate, on which the protective film is formed for withstanding plasma electrical discharge, to 280° C. or more in a vacuum or in a controlled atmosphere; and a sealing step of sealing the front substrate, in which the impurity gases have been released from the protective film, and a rear substrate which are placed in contact with each other. | 07-01-2010 |
| 20100163703 | STAGE APPARATUS - A stage apparatus enables easy position alignment at a real installation site. Mounts | 07-01-2010 |
| 20100159787 | METHOD AND APPARATUS FOR MANUFACTURING SEALED PANEL AND METHOD AND APPARATUS FOR MANUFACTURING PLASMA DISPLAY PANEL - A method for manufacturing a sealed panel having a first substrate and a second substrate, including: a melting step of melting a sealing material which does not contain a binder for making the sealing material into paste form; a coating step of applying the melted sealing material onto a surface of the second substrate; and a sealing step of laminating the first substrate and the second substrate via the sealing material applied onto the surface of the second substrate. | 06-24-2010 |
| 20100151150 | PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER - A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity. | 06-17-2010 |
| 20100146762 | STAGE APPARATUS ASSEMBLING METHOD - An assembling method that is high in assembly accuracy and easily performed at the actual installation site is provided. In this method, the sub base plates on the sub mounting tables are aligned with respect to a main base plate on a main mounting table at a temporary installation site, and the state thereof is maintained. Then, the main mounting table and the sub mounting tables are separated from each other to be transferred to the actual installation site, and the positioning state is restored at the actual installation site. Since a positional alignment can be performed at the temporary installation site, the work required at the actual installation site can be reduced. Furthermore, since a fine adjustment can be performed at the actual installation site, the accuracy in the positional alignment can be improved. | 06-17-2010 |
| 20100143079 | VACUUM PROCESSING APPARATUS - A vacuum treatment apparatus is provided with a plurality of carriers whereupon a base material is mounted; a circulation path which is held in a controlled atmosphere and permits the carriers to circulate therein; a plurality of base material exit/entrance chambers arranged in the circulation path for loading and taking out the base material on and from the carriers; and vacuum treatment chambers which are arranged between the base material exit/entrance chambers in the circulation path and perform vacuum treatment to the base material. | 06-10-2010 |
| 20100141878 | METHOD FOR PRODUCING COLOR FILTER, COLOR FILTER, LIQUID CRYSTAL DISPLAY DEVICE AND PRODUCING APPARATUS - Exfoliation of an etching stopper is prevented. A color filter of the present invention includes an inorganic protection film (etching stopper) composed mainly of SnO | 06-10-2010 |
| 20100133429 | METHOD OF CONTROLLING MASS SPECTROMETER AND MASS SPECTROMETER - A method of controlling a mass spectrometer comprises the steps of: supplying a current to a cathode electrode of an ion source having the cathode electrode and an anode electrode, and ionizing a molecules of a gas to be measured; selecting ions generated in the ion source by mass-to-charge ratio; and detecting an ion current value of the selected ions. When a partial pressure of the gas to be measured is measured based on a detection result of the ion current value, a cathode current is supplied to the cathode electrode such that an emission current flowing between the cathode electrode and the anode electrode becomes constant. When a partial pressure of the gas to be measured is not measured, a constant current having a current value less than that of the cathode current is supplied to the cathode electrode. | 06-03-2010 |
| 20100126415 | CONVEYOR AND DEPOSITION APPARATUS, AND MAINTENANCE METHOD THEREOF - A conveyor and a deposition apparatus, and a maintenance method thereof are disclosed. The conveyor includes a frame; a lower support mechanism for supporting a carrier on which is longitudinally mounted a substrate and for transferring the carrier; and an upper support mechanism for supporting the carrier, in which the frame comprises a lower frame and an upper frame, and in which the lower support mechanism is provided on the lower frame and the upper support mechanism is provided on the upper frame, the upper frame and the lower frame being configured to be separately movable. Therefore, with the rotational movement of the upper frame, it is possible to arrange a cathode member in a space formed above the lower frame. This can make the spacing between the deposition treatment passage and the carrier transfer passage small. As a result, it is possible to make an inner court of the deposition apparatus narrow. Therefore, in the conveyor capable of transferring a carrier and in the deposition apparatus including the conveyor and further including a vacuum treatment apparatus and a transfer system, it is possible to make the installation area thereof small and narrow. | 05-27-2010 |
| 20100121487 | SUBSTRATE TRANSFER APPARATUS - A substrate transfer apparatus that reduces the quantity of sensors used to detect the position of a substrate so as to simplify the structure and lower costs. The substrate transfer apparatus transfers a substrate (S) between a core chamber ( | 05-13-2010 |
| 20100119712 | POLYUREA FILM AND METHOD FOR PREPARING SAME - It is an object of the invention to prepare a polyurea film with excellent transparency, light resistance and mass-scale productivity on a substrate of a resin-molded article by a method of vacuum deposition polymerization. A polyurea film obtained by vacuum deposition polymerization of an aromatic alkyl-, alicyclic- or aliphatic diisocyanate monomer and an aromatic alkyl-, alicyclic- or aliphatic diamine monomer, where the diisocyanate monomer and the diamine monomer are selected from diisocyanate monomers and diamine monomers in a relation such that the difference in the activation energy required for the elimination from a substrate between these monomers is 10 kJ or less. | 05-13-2010 |
| 20100117280 | SUPPORTING MEMBER AND CARRIER, AND METHOD OF SUPPORTING - A supporting member, carrier and method of supporting are provided with a supporting member main body mounted to freely rotate. The supporting member main body is provided with a plurality of projections extending radially from a central rotation axis. Since the substrate is supported by abutment of the projections with an end of the substrate, the occurrence of cracking in the substrate can be prevented or the durability of the supporting member main body can be increased. | 05-13-2010 |
| 20100112230 | COATED FILM FORMING METHOD - A coated film with no observable streak is formed. The landing positions of a first discharge liquid discharged through a first printing head and the landing positions of a second discharge liquid discharged through a second printing head are disposed in a mixed manner in an area on a substrate where the first printing head and the second printing head overlap. Which discharge liquids are to be landed is determined according to random numbers. Since a coated film which is formed with the first and second discharge liquids in a mixed manner is disposed between a coated film formed with the first discharge liquids and a coated film formed with the second discharge liquids, a boundary is obscured and no streak appears. | 05-06-2010 |
| 20100111649 | TRANSFER DEVICE AND VACUUM PROCESSING APPARATUS USING THE SAME - A transfer device that avoids the problem of a vacuum apparatus being contaminated by grease, dust, and others and having a small base area is provided. Corrosion protection according to an existing technology may be applied to the transfer device. The transfer device may have a transfer section to support and transfer an object to be transferred, a link to transmit power from a device main body to the transfer section and move the transfer section in the horizontal direction, and a guide mechanism disposed between the device main body and the transfer section guide. The guide mechanism may have pivotally connected first and second guide arms. The first guide arm at one end of the guide mechanism may be attached to the device main body, and the second guide arm at the other end thereof may be attached to the transfer section. | 05-06-2010 |
| 20100109220 | Substrate Holding Mechanism and Substrate Assembly Apparatus Including the Same - Object To provide a substrate assembly apparatus capable of simplifying a structure of the apparatus and performing appropriate detachment of a substrate constantly. | 05-06-2010 |
