TRIQUINT SEMICONDUCTOR, INC. Patent applications |
Patent application number | Title | Published |
20150333192 | VARACTOR DIODE WITH HETEROSTRUCTURE - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device, such as a varactor diode. The IC device includes a composite collector and heterostructure. A layer of wider band gap material is included as part of the collector at the collector/base interface. The presence of the wide band gap material may increase breakdown voltage and allow for increased hyperabrupt doping profiles in the narrower band gap portion of the collector. This may allow for increased tuning range and improved intermodulation (IMD) performance without the decreased breakdown performance associated with homojunction devices. Other embodiments may also be described and/or claimed. | 11-19-2015 |
20150325573 | DUAL STACK VARACTOR - Embodiments include apparatuses and methods related to vertically stacked varactors. Specifically two varactors may be constructed of vertically stacked layers including an anode layer, a contact layer, and a varactor layer. The two varactors may share one or more layers in common. In some embodiments the two varactors may share the anode layer in common, while in other embodiments the two varactors may share the contact layer in common. | 11-12-2015 |
20150270817 | LOW NOISE AMPLIFIER DRAIN SWITCH CIRCUIT - Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA. | 09-24-2015 |
20150256172 | BIAS CIRCUIT FOR A HIGH POWER RADIO FREQUENCY SWITCHING DEVICE - Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off. | 09-10-2015 |
20150222259 | FIELD EFFECT TRANSISTOR SWITCHING CIRCUIT - Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed. | 08-06-2015 |
20150221755 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - Various embodiments provide an electrostatic discharge (ESD) protection device. The ESD protection device may include a subcollector, collector, base, and emitter formed in layers on top of one another. The emitter may include a different semiconductor than a semiconductor included in the base to form a heterojunction. The ESD protection device may include a collector contact disposed on the subcollector and an emitter contact disposed on the emitter. The ESD protection device may be a two-terminal device, with no conductive base contact coupled with the base. | 08-06-2015 |
20150200702 | PASSIVE FEEDBACK PATH FOR PRE-DISTORTION IN POWER AMPLIFIERS - Embodiments of the present disclosure describe apparatuses, methods, and systems of front end module (FEM) having a feedback path that includes a passive attenuation network. The passive attenuation network may provide a feedback signal to a receive output port of the FEM that may be used as a basis for predistortion. Other embodiments may also be described and/or claimed. | 07-16-2015 |
20150200287 | DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR - Embodiments include high electron mobility transistors (HEMTs) comprising a substrate and a barrier layer including a doped component. The doped component may be a germanium doped layer or a germanium doped pulse. Other embodiments may include methods for fabricating such a HEMT. | 07-16-2015 |
20150200284 | EMITTER CONTACT EPITAXIAL STRUCTURE AND OHMIC CONTACT FORMATION FOR HETEROJUNCTION BIPOLAR TRANSISTOR - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed. | 07-16-2015 |
20150116947 | ADVANCED GROUNDING SCHEME - A laminate substrate may include a slug positioned within a cavity of a laminate core. The laminate substrate may have routing layers on either side of the laminate core, at least one of which is coplanar with an outer side of the slug. A capping layer may then be applied to the laminate substrate which is directly coupled with the slug and the routing layer. In embodiments, a dielectric layer may be coupled with the capping layer, and an additional routing layer may be coupled with the dielectric layer. Therefore, the routing layer may be an “inner” routing layer that is coplanar with, and coupled with, the slug. | 04-30-2015 |
20150094000 | Temperature Compensated Bulk Acoustic Wave Devices Using Over-Moded Acoustic Reflector Layers - Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer. | 04-02-2015 |
20150084702 | ELECTROSTATIC DISCHARGE (ESD) CIRCUITRY - Embodiments of the present disclosure describe electrostatic discharge (ESD) circuitry and associated techniques and configurations. In one embodiment, ESD circuitry includes a first node coupled with a supply voltage node and a ground node, a first transistor coupled with the first node and the supply voltage node, a second transistor coupled with the first node and the ground node, a second node coupled with the first transistor and the second transistor, a third transistor coupled with the second node and a third node coupled with the third transistor, wherein a first time period to charge the first node is less than a second time period to discharge the third node. Other embodiments may be described and/or claimed. | 03-26-2015 |
20150061770 | BIAS-BOOSTING BIAS CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIER - Various embodiments provide a bias circuit for a radio frequency (RF) power amplifier (PA) to provide a direct current (DC) bias voltage, with bias boosting, to the RF PA. The bias circuit may include a bias transistor that forms a current mirror with an amplifier transistor of the RF PA. The bias circuit may further include a first resistor coupled between the gate terminal and the drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit may further include a second resistor coupled between the drain terminal of the bias transistor and the RF PA (e.g., the gate terminal of the amplifier transistor). An amount of bias boosting of the DC bias voltage provided by the bias circuit may be based on an impedance value of the second resistor. | 03-05-2015 |
20150035601 | SPLIT BIASED RADIO FREQUENCY POWER AMPLIFIER WITH ENHANCED LINEARITY - A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density. | 02-05-2015 |
20140273881 | BORDER RING MODE SUPPRESSION IN SOLIDLY-MOUNTED BULK ACOUSTIC WAVE RESONATOR - Embodiments provide a solidly-mounted bulk acoustic wave (BAW) resonator and method of making same. In embodiments, the BAW resonator may include one or more extensions that are acoustical similar to active region components of the BAW resonator. Other embodiments may be described and claimed. | 09-18-2014 |
20140252916 | ACOUSTIC WAVE DEVICE - Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer. | 09-11-2014 |
20140231815 | PACKAGE FOR HIGH-POWER SEMICONDUCTOR DEVICES - Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed. | 08-21-2014 |
20140206149 | PREFORM INCLUDING A GROOVE EXTENDING TO AN EDGE OF THE PREFORM - Embodiments include but are not limited to apparatuses and systems including a die or a preform including at least one groove configured to extend from at least one via of the die to an edge of the die. Other embodiments may be described and claimed. | 07-24-2014 |
20140197882 | SWITCHING DEVICE WITH RESISTIVE DIVIDER - Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a resistive divider comprising a first resistor and a second resistor may be coupled with the FET at a position electrically between a gate terminal of the FET and a body terminal of the FET. | 07-17-2014 |
20140187175 | RADIO FREQUENCY SWITCH CIRCUIT - Embodiments provide a radio frequency (RF) power amplifier (PA) circuit having a high-power mode and a low-power mode. The RF PA circuit may include a high-power amplifier to provide an amplified RF signal on a first path, and a low-power amplifier to provide an amplified RF signal on a second path. The first path and second path may intersect at a junction node. A switch may be coupled between the low-power amplifier and the junction node to switch the circuit between the high-power mode and the low-power mode. A matching circuit may be coupled on the second path to match an output impedance of the low-power amplifier to a junction impedance of the junction node at a fundamental frequency of the RF signal, and to present an open circuit at a third harmonic of the RF signal. The matching circuit may facilitate high efficiency for the RF PA circuit. | 07-03-2014 |
20140145243 | GROUP III-NITRIDE-BASED TRANSISTOR WITH GATE DIELECTRIC INCLUDING A FLUORIDE - OR CHLORIDE- BASED COMPOUND - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N) and a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N). The IC device may further include a gate terminal and a gate dielectric layer disposed between the gate terminal and the barrier layer and/or between the gate terminal and the buffer layer. In various embodiments, the gate dielectric layer may include a fluoride- or chloride-based compound, such as calcium fluoride (CaF | 05-29-2014 |
20140106511 | FLIP-CHIP PACKAGING TECHNIQUES AND CONFIGURATIONS - Embodiments of the present disclosure flip-chip packaging techniques and configurations. An apparatus may include a package substrate having a plurality of pads formed on the package substrate, the plurality of pads being configured to receive a corresponding plurality of interconnect structures formed on a die and a fluxing underfill material disposed on the package substrate, the fluxing underfill material comprising a fluxing agent configured to facilitate formation of solder bonds between individual interconnect structures of the plurality of interconnect structures and individual pads of the plurality of pads and an epoxy material configured to harden during formation of the solder bonds to mechanically strengthen the solder bonds. Other embodiments may also be described and/or claimed. | 04-17-2014 |
20140097914 | BULK ACOUSTIC WAVE RESONATOR WITH MEANS FOR SUPPRESSION OF PASS-BAND RIPPLE IN BULK ACOUSTIC WAVE FILTERS - A bulk acoustic wave resonator comprising a substrate, a Bragg reflector, a top and a bottom electrode and a piezoelectric layer with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate, an absorbing layer disposed on the rear side of the substrate and/or an absorbing layer disposed on the front side of the substrate. | 04-10-2014 |
20140049311 | SWITCHING DEVICE WITH NON-NEGATIVE BIASING - Embodiments provide a switching device including one or more field-effect transistors (FETs) and bias circuitry. The one or more FETs may transition between an off state and an on state to facilitate switching of a transmission signal. The one or more FETs may include a drain terminal, a source terminal, a gate terminal, and a body. The biasing circuitry may bias the drain terminal and the source terminal to a first DC voltage in the on state and a second DC voltage in the off state. The first and second DC voltages may be non-negative. The biasing circuitry may be further configured to bias the gate terminal to the first DC voltage in the off state and the second DC voltage in the on state. | 02-20-2014 |
20140002171 | BODY-CONTACTED PARTIALLY DEPLETED SILICON ON INSULATOR TRANSISTOR | 01-02-2014 |
20140001478 | GROUP III-NITRIDE TRANSISTOR USING A REGROWN STRUCTURE | 01-02-2014 |
20130335169 | Optimal Acoustic Impedance Materials for Polished Substrate Coating to Suppress Passband Ripple in BAW Resonators and Filters - A bulk acoustic wave (BAW) resonator is constructed to reduce phase and amplitude ripples in a frequency response. The BAW resonator is fabricated on a substrate 400 μm thick or less, preferably approximately 325 μm, having a first side and a polished second side with a peak-to-peak roughness of approximately 1000 A. A Bragg mirror having alternate layers of a high acoustic impedance material, such as tungsten, and a low acoustic impedance material is fabricated on the first side of the substrate. A BAW resonator is fabricated on the Bragg mirror. A lossy material, such as epoxy, coats the second side of the substrate opposite the first side. The lossy material has an acoustic impedance in the range of 0.01× to 1.0× the acoustic impedance of the layers of high acoustic impedance material. | 12-19-2013 |
20130320349 | IN-SITU BARRIER OXIDATION TECHNIQUES AND CONFIGURATIONS - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), wherein the barrier layer includes an oxidized portion of the barrier layer, a gate dielectric disposed on the oxidized portion of the barrier layer, and a gate electrode disposed on the gate dielectric, wherein the oxidized portion of the barrier layer is disposed in a gate region between the gate electrode and the buffer layer. | 12-05-2013 |
20130313561 | GROUP III-NITRIDE TRANSISTOR WITH CHARGE-INDUCING LAYER - Embodiments of the present disclosure describe apparatuses, methods, and systems of a device such as a transistor. The device includes a buffer layer disposed on a substrate, the buffer layer being configured to serve as a channel of a transistor and including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer being configured to supply mobile charge carriers to the channel and including aluminum (Al), gallium (Ga), and nitrogen (N), a charge-inducing layer disposed on the barrier layer, the charge-inducing layer being configured to induce charge in the channel and including aluminum (Al) and nitrogen (N), and a gate terminal disposed in the charge-inducing layer and coupled with the barrier layer to control the channel. Other embodiments may also be described and/or claimed. | 11-28-2013 |
20130308274 | THERMAL SPREADER HAVING GRADUATED THERMAL EXPANSION PARAMETERS - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a thermal spreader having graduated thermal expansion parameters. In some embodiments, the thermal spreader may have a first layer with a first coefficient of thermal expansion (CTE) and a second layer with a second CTE that is greater than the first CTE. Other embodiments may be described and/or claimed. | 11-21-2013 |
20130285741 | POWER AMPLIFIER WITH FAST LOADLINE MODULATION - Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit providing for fast loadline modulation are generally described herein. Other embodiments may be described and claimed. | 10-31-2013 |
20130260704 | RADIO FREQUENCY POWER AMPLIFIER WITH LOW DYNAMIC ERROR VECTOR MAGNITUDE - Embodiments provide a multi-stage radio frequency (RF) power amplifier (PA) having a low dynamic error vector magnitude (EVM). A first stage of the RF PA may include a first active device configured to receive an enable signal and to turn on in response to the enable signal, thereby activating the first stage. The RF PA may further include a second active device coupled in series with the first active device and configured to receive a main supply voltage. The second active device may provide a first supply voltage across the first active device that is less than and independent of the main supply voltage. One of the first active device or the second active device may be configured to receive an RF input signal and to pass an amplified RF output signal to a second stage of the RF PA circuit. | 10-03-2013 |
20130234344 | FLIP-CHIP PACKAGING TECHNIQUES AND CONFIGURATIONS - Embodiments of the present disclosure flip-chip packaging techniques and configurations. An apparatus may include a package substrate having a plurality of pads formed on the package substrate, the plurality of pads being configured to receive a corresponding plurality of interconnect structures formed on a die and a fluxing underfill material disposed on the package substrate, the fluxing underfill material comprising a fluxing agent configured to facilitate formation of solder bonds between individual interconnect structures of the plurality of interconnect structures and individual pads of the plurality of pads and an epoxy material configured to harden during formation of the solder bonds to mechanically strengthen the solder bonds. Other embodiments may also be described and/or claimed. | 09-12-2013 |
20130165061 | MIXER WITH HIGH SECOND-ORDER AND THIRD-ORDER INTERCEPT POINT - Embodiments of apparatuses, systems and methods relating to a mixer having high second- and third-order intercept points are disclosed. Other embodiments may be described and claimed. | 06-27-2013 |
20130141883 | ENCLOSURE FOR A MULTI-CHANNEL MODULATOR DRIVER - Embodiments of the present disclosure describe techniques and configurations for an enclosure that can be used for channel isolation in a multi-channel modulator driver such as, for example, an optical modulator driver. A system may include a substrate, a multi-channel modulator driver mounted on the substrate, and an enclosure mounted on the substrate to cover the multi-channel modulator driver, the enclosure having a wall that is disposed between first components of the multi-channel modulator driver associated with a first channel and second components of the multi-channel modulator driver associated with a second channel, the wall being composed of an electrically conductive material. Other embodiments may also be described and/or claimed. | 06-06-2013 |
20130119404 | DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE - Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active layer over a first substrate in a manner such that a frontside of the active layer faces the first substrate and a backside of the active layer faces away from the first substrate, forming a second substrate over the backside of the active layer, and removing the first substrate to expose the frontside of the active layer. Other embodiments are described and claimed. | 05-16-2013 |
20130109332 | TEMPERATURE COMPENSATION OF ACOUSTIC RESONATORS IN THE ELECTRICAL DOMAIN | 05-02-2013 |
20130106535 | HIGH COUPLING, LOW LOSS SAW FILTER AND ASSOCIATED METHOD | 05-02-2013 |
20130105817 | HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD | 05-02-2013 |
20130099284 | GROUP III-NITRIDE METAL-INSULATOR-SEMICONDUCTOR HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS - Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device such as, for example, a high electron mobility transistor (HEMT) or metal-insulator-semiconductor field-effect transistor (MISFET), or combinations thereof. The IC device includes a buffer layer formed on a substrate, a barrier layer formed on the buffer layer, the barrier layer including aluminum (Al), nitrogen (N), and at least one of indium (In) and gallium (Ga), a cap layer formed on the barrier layer, the cap layer including nitrogen (N) and at least one of indium (In) and gallium (Ga), and a gate formed on the cap layer, the gate being directly coupled with the cap layer. Other embodiments may also be described and/or claimed. | 04-25-2013 |
20130087379 | HIGH RELIABILITY WAFER LEVEL PACKAGE AND MANUFACTURING METHOD - Disclosed embodiments include a package having an electronic device disposed within a cavity formed by an enclosure that includes a sharp portion. The package may further include a photosensitive layer applied over the enclosure to provide a smooth portion that is adjacent to the sharp portion. Methods for manufacturing the package are also described. Other embodiments may be described and claimed. | 04-11-2013 |
20120302178 | REGROWN SHOTTKY STRUCTURES FOR GAN HEMT DEVICES - Embodiments include but are not limited to apparatuses and systems including a buffer layer, a group III-V layer over the buffer layer, a source contact and a drain contact on the group III-V layer, and a regrown Schottky layer over the group III-V layer, and between the source and drain contacts. The embodiments further include methods for making the apparatuses and systems. Other embodiments may be described and claimed. | 11-29-2012 |
20120293151 | COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DIRECT CURRENT TO DIRECT CURRENT CONVERTER - Disclosed embodiments include a direct current to direct current (DC-DC) converter including one or more charge pumps and configured to receive an input voltage and a first clock signal and a second clock signal. The first clock signal and second clock signal may be non-overlapping, and each may alternate between a ground voltage and a first voltage. The DC-DC converter may be configured to produce an output voltage over the clock cycle that has a negative polarity with a magnitude substantially equal to a sum of magnitudes of the input voltage and an integer multiple of the first voltage, the integer multiple being equal to a number of the one or more charge pumps in the DC-DC converter. | 11-22-2012 |
20120280755 | FLIP-CHIP POWER AMPLIFIER AND IMPEDANCE MATCHING NETWORK - Embodiments of circuits, apparatuses, and systems for a flip-chip power amplifier and impedance matching network are disclosed. Other embodiments may be described and claimed. | 11-08-2012 |
20120243580 | QUADRATURE LATTICE MATCHING NETWORK - Embodiments include but are not limited to apparatuses and systems including a quadrature lattice matching network including first path having a series inductor and a shunt inductor, and a second path having a series capacitor and a shunt capacitor. Other embodiments may be described and claimed. | 09-27-2012 |
20120236449 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR COMPOUND SEMICONDUCTOR DEVICES AND CIRCUITS - An apparatus and method is disclosed for providing an electrostatic discharge protection circuit for compound semiconductor devices and circuits. The electrostatic discharge protection circuit comprises a first terminal and a second terminal. The electrostatic discharge protection circuit further comprises a transistor shunt element that is operably coupled between the first terminal and the second terminal; the transistor shunt element is capable of providing a bi-directional discharge path between the first terminal and the second terminal. The electrostatic discharge protection circuit further comprises a shut-off element that is operably coupled with the second terminal; the shut-off element is capable of keeping the transistor shunt element turned-off. | 09-20-2012 |
20120200370 | LADDER QUADRATURE HYBRID - Embodiments of circuits, apparatuses, and systems for a quadrature hybrid circuit are disclosed. Other embodiments may be described and claimed. | 08-09-2012 |
20120188020 | LINEAR VOLTAGE-CONTROLLED CURRENT SOURCE - Embodiments of circuits, methods and systems for a voltage-controlled current source are disclosed. In some embodiments, the voltage-controlled current source may be a three-terminal device having separated gate structures. Other embodiments may also be described and claimed. | 07-26-2012 |
20120161812 | LOGIC CIRCUIT WITHOUT ENHANCEMENT MODE TRANSISTORS - Embodiments of circuits, methods and systems for powering various stages of a logic circuit are disclosed. Other embodiments may also be described and claimed. | 06-28-2012 |
20120153356 | HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM GALLIUM NITRIDE LAYER - Disclosed embodiments include a high electron mobility transistor (HEMT) with an indium gallium nitride layer set as one of a plurality of barrier sublayers and methods for forming such a HEMT. Other embodiments are also be described and claimed. | 06-21-2012 |
20120080768 | SHEET-MOLDED CHIP-SCALE PACKAGE - Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the first surface, the second surface, and at least a portion of a side surface of the conductive pillar. Methods for making the same also are described. | 04-05-2012 |
20120007658 | BALANCED SWITCH - Embodiments of circuits, devices, and methods related to a radio frequency switch are disclosed. In various embodiments, a circuit may comprise a series path including a series transistor to be switched on during a first mode of operation; a shunt path including a shunt transistor to be switched off during the first mode of operation; and a return path including a return transistor to be switched on during the first mode of operation. Other embodiments may also be described and claimed. | 01-12-2012 |
20110292554 | PROTECTION CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIER - Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed. | 12-01-2011 |
20110291765 | OVERDRIVE PROTECTION CIRCUIT - Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed. | 12-01-2011 |
20110248693 | VOLTAGE REGULATOR WITH CONTROL LOOP FOR AVOIDING HARD SATURATION - Embodiments of circuits, apparatuses, and systems for a voltage regulator with a control loop for avoiding hard saturation are disclosed. Other embodiments may be described and claimed. | 10-13-2011 |
20110241020 | HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER - Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed. | 10-06-2011 |
20110204747 | Temperature Compensated Surface Acoustic Wave Device and Method Having Buried Interdigital Transducers for Providing an Improved Insertion Loss and Quality Factor - A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired. | 08-25-2011 |
20110187345 | AUTOMATIC CALIBRATION CIRCUIT - Embodiments of circuits, devices, and methods related to calibration circuits are disclosed. In various embodiments, a calibration circuit may be used for calibrating a power detector circuit. In various other embodiments, a calibration circuit may be used for calibrating a resistor module. Other embodiments may also be described and claimed. | 08-04-2011 |
20110156834 | INPUT-POWER OVERLOAD-PROTECTION CIRCUIT - Embodiments of circuits, apparatuses, and systems for a protection circuit having a control element with an attenuation state to protect against overload conditions. Other embodiments may be described and claimed. | 06-30-2011 |
20100271116 | VOLTAGE REGULATOR CIRCUIT - Embodiments of circuits, systems, and methods relating to a voltage regulator circuit are disclosed. In particular, in accordance with some embodiments, a voltage regulator having a field effect transistor (FET) portion and a heterojunction bipolar transistor (HBT) portion integrated into a common substrate is provided. Other embodiments may be described and claimed. | 10-28-2010 |
20100259329 | FIELD-PLATED TRANSISTOR INCLUDING FEEDBACK RESISTOR - Embodiments include but are not limited to apparatuses and systems including a unit cell having a source electrode, a gate electrode to receive an input radio frequency (RF) signal, and a drain electrode to output an amplified RF signal. A field plate may be coupled with the source electrode, and a feedback resistor may be coupled between the field plate and the source electrode. | 10-14-2010 |
20100259321 | FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF FIELD PLATES - Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode. | 10-14-2010 |
20100194473 | POWER AMPLIFIER WITH RECONFIGURABLE DIRECT CURRENT COUPLING - Embodiments of circuits, systems, and methods relating to a power amplifier with a reconfigurable direct current coupling are disclosed. Other embodiments may be described and claimed. | 08-05-2010 |
20100123228 | PACKAGE INCLUDING PROXIMATELY-POSITIONED LEAD FRAME - Embodiments of a microelectronic package are generally described herein. A microelectronic package may include a die having a first side and a second side, opposite the first side, a flange coupled to the first side of the die, and a lead frame proximately positioned relative to the die and coupled to the second side of the die. Other embodiments may be described and claimed. | 05-20-2010 |
20100120385 | RADIO FREQUENCY AMPLIFICATION CIRCUIT UTILIZING VARIABLE VOLTAGE GENERATOR - Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit utilizing a variable voltage generator are generally described herein. Other embodiments may be described and claimed. | 05-13-2010 |
20100072484 | HETEROEPITAXIAL GALLIUM NITRIDE-BASED DEVICE FORMED ON AN OFF-CUT SUBSTRATE - Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other embodiments may be described and claimed. | 03-25-2010 |
20090283802 | HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE WITH ELECTROSTATIC DISCHARGE RUGGEDNESS - A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer. | 11-19-2009 |