| TRIQUINT SEMICONDUCTOR, INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120080768 | SHEET-MOLDED CHIP-SCALE PACKAGE - Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the first surface, the second surface, and at least a portion of a side surface of the conductive pillar. Methods for making the same also are described. | 04-05-2012 |
| 20120007658 | BALANCED SWITCH - Embodiments of circuits, devices, and methods related to a radio frequency switch are disclosed. In various embodiments, a circuit may comprise a series path including a series transistor to be switched on during a first mode of operation; a shunt path including a shunt transistor to be switched off during the first mode of operation; and a return path including a return transistor to be switched on during the first mode of operation. Other embodiments may also be described and claimed. | 01-12-2012 |
| 20110292554 | PROTECTION CIRCUIT FOR RADIO FREQUENCY POWER AMPLIFIER - Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed. | 12-01-2011 |
| 20110291765 | OVERDRIVE PROTECTION CIRCUIT - Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed. | 12-01-2011 |
| 20110248693 | VOLTAGE REGULATOR WITH CONTROL LOOP FOR AVOIDING HARD SATURATION - Embodiments of circuits, apparatuses, and systems for a voltage regulator with a control loop for avoiding hard saturation are disclosed. Other embodiments may be described and claimed. | 10-13-2011 |
| 20110241020 | HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER - Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed. | 10-06-2011 |
| 20110204747 | Temperature Compensated Surface Acoustic Wave Device and Method Having Buried Interdigital Transducers for Providing an Improved Insertion Loss and Quality Factor - A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired. | 08-25-2011 |
| 20110187345 | AUTOMATIC CALIBRATION CIRCUIT - Embodiments of circuits, devices, and methods related to calibration circuits are disclosed. In various embodiments, a calibration circuit may be used for calibrating a power detector circuit. In various other embodiments, a calibration circuit may be used for calibrating a resistor module. Other embodiments may also be described and claimed. | 08-04-2011 |
| 20110156834 | INPUT-POWER OVERLOAD-PROTECTION CIRCUIT - Embodiments of circuits, apparatuses, and systems for a protection circuit having a control element with an attenuation state to protect against overload conditions. Other embodiments may be described and claimed. | 06-30-2011 |
| 20100271116 | VOLTAGE REGULATOR CIRCUIT - Embodiments of circuits, systems, and methods relating to a voltage regulator circuit are disclosed. In particular, in accordance with some embodiments, a voltage regulator having a field effect transistor (FET) portion and a heterojunction bipolar transistor (HBT) portion integrated into a common substrate is provided. Other embodiments may be described and claimed. | 10-28-2010 |
| 20100259329 | FIELD-PLATED TRANSISTOR INCLUDING FEEDBACK RESISTOR - Embodiments include but are not limited to apparatuses and systems including a unit cell having a source electrode, a gate electrode to receive an input radio frequency (RF) signal, and a drain electrode to output an amplified RF signal. A field plate may be coupled with the source electrode, and a feedback resistor may be coupled between the field plate and the source electrode. | 10-14-2010 |
| 20100259321 | FIELD EFFECT TRANSISTOR HAVING A PLURALITY OF FIELD PLATES - Embodiments include but are not limited to apparatuses and systems including a field-effect transistor switch. A field-effect transistor switch may include a first field plate coupled with a gate electrode, the first field plate disposed substantially equidistant from a source electrode and a drain electrode. The field-effect transistor switch may also include a second field plate proximately disposed to the first field plate and disposed substantially equidistant from the source electrode and the drain electrode. The first and second field plates may be configured to reduce an electric field between the source electrode and the gate electrode and between the drain electrode and the gate electrode. | 10-14-2010 |
| 20100194473 | POWER AMPLIFIER WITH RECONFIGURABLE DIRECT CURRENT COUPLING - Embodiments of circuits, systems, and methods relating to a power amplifier with a reconfigurable direct current coupling are disclosed. Other embodiments may be described and claimed. | 08-05-2010 |
| 20100123228 | PACKAGE INCLUDING PROXIMATELY-POSITIONED LEAD FRAME - Embodiments of a microelectronic package are generally described herein. A microelectronic package may include a die having a first side and a second side, opposite the first side, a flange coupled to the first side of the die, and a lead frame proximately positioned relative to the die and coupled to the second side of the die. Other embodiments may be described and claimed. | 05-20-2010 |
| 20100120385 | RADIO FREQUENCY AMPLIFICATION CIRCUIT UTILIZING VARIABLE VOLTAGE GENERATOR - Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit utilizing a variable voltage generator are generally described herein. Other embodiments may be described and claimed. | 05-13-2010 |
| 20100072484 | HETEROEPITAXIAL GALLIUM NITRIDE-BASED DEVICE FORMED ON AN OFF-CUT SUBSTRATE - Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other embodiments may be described and claimed. | 03-25-2010 |
| 20090283802 | HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE WITH ELECTROSTATIC DISCHARGE RUGGEDNESS - A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer. | 11-19-2009 |
