| TRI CHEMICAL LABORATORIES INC. Patent applications |
| Patent application number | Title | Published |
|---|
| 20120101290 | METHOD FOR PRODUCING RUTHENIUM COMPOUND - A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL | 04-26-2012 |
| 20120080805 | Semiconductor device and method of manufacturing the same - A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond. | 04-05-2012 |
| 20090191338 | Film-Deposition Apparatus and Film-Deposition Method - A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese. | 07-30-2009 |
| 20090130326 | FILM FORMING MATERIAL AND METHOD OF FILM FORMING - An interlayer insulating film enabling an enhancement in a signal processing speed to be obtained, of which a dielectric constant is 2.2 or less. There is provided a method of forming a film on a substrate in accordance with a chemical vapor deposition process, comprising: the feeding step of feeding (c-C | 05-21-2009 |
