TRANSLUCENT PHOTONICS, INC.
|TRANSLUCENT PHOTONICS, INC. Patent applications|
|Patent application number||Title||Published|
|20090236595||Semiconductor Structures with Rare-earths - The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations.||09-24-2009|
|20090038669||Thin Film Solar Cell III - The present invention teaches a device for converting solar radiation to electrical energy comprising a thin film, single crystal device chosen from a variety of semiconductor materials, optionally, employing an alternative substrate, and various combinations of p-n, p-i-n and avalanche p-i-n diodes to enable high conversion efficiency photo-voltaic devices.||02-12-2009|
|20090001329||RARE EARTH-OXIDES, RARE EARTH-NITRIDES, RARE EARTH-PHOSPHIES, AND TERNARY ALLOYS WITH SILICON - Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.||01-01-2009|
|20080308143||Thin Film Semi-Conductor-on-Glass Solar Cell Devices - The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and/or ceramic and/or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.||12-18-2008|
|20080295879||Thermoelectric and Pyroelectric Energy Conversion Devices - New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.||12-04-2008|
|20080286949||Method of Forming a Rare-Earth Dielectric Layer - Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.||11-20-2008|
|20080217695||Heterogeneous Semiconductor Substrate - A substrate comprising a first region of a first semiconductor and a second region of second semiconductor, wherein the first semiconductor and the second semiconductor are different, is disclosed. The substrate is particularly supportive of p-channel MOSFETs and n-channel MOSFETs having carrier mobility that is closer than in substrates comprising a single semiconductor.||09-11-2008|
Patent applications by TRANSLUCENT PHOTONICS, INC.