| TOYODA GOSEI CO.,LTD. Patent applications |
| Patent application number | Title | Published |
|---|
| 20090197118 | Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device - Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection L | 08-06-2009 |
| 20090031540 | Clip - When an operation wall of an inner member is inserted into an insertion portion of an outer member and an engagement piece does not receive a cam operation due to a slanted cam portion, contact pieces of the outer member do not correspond to a positioning hole of the inner member and are located in a position so as not to be inserted into the positioning hole. When the outer member is inserted into an attachment hole of an attachment receiving member with maintaining a state where the engagement piece does not receive the cam operation due to the slanted cam portion, the contact pieces are elastically deformed inwardly and located in a position so as to be inserted into the positioning hole. | 02-05-2009 |
